APT2X31DQ100J - Microsemi Corp.

PRODUCT BENEFITS

• Low Losses

• Low Noise Switching

• Cooler Operation

• Higher Reliability Systems

• Increased System Power

Density

PRODUCT FEATURES

• Ultrafast Recovery Times

• Soft Recovery Characteristics

• Popular SOT-227 Package

• Low Forward Voltage

• High Blocking Voltage

• Low Leakage Current

• Avalanche Energy Rated

PRODUCT APPLICATIONS

• Anti-Parallel Diode

-Switchmode Power Supply

-Inverters

• Free Wheeling Diode

-Motor Controllers

-Converters

• Snubber Diode

• Uninterruptible Power Supply (UPS)

• Induction Heating

• High Speed Rectiﬁers

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

APT2x31DQ100J 1000V 30A

APT2x30DQ100J 1000V 30A

053-4216 Rev B 7-2006

New Diode Data Sheet By Darel Bidwell

Anti-Parallel Parallel

2

1

32 3

41 4

APT2x30DQ100J APT2x31DQ100J

STATIC ELECTRICAL CHARACTERISTICS

Symbol

VF

IRM

CT

UNIT

Volts

µA

pF

MIN TYP MAX

2.3 2.8

2.7

1.7

100

500

26

Characteristic / Test Conditions

Forward Voltage

Maximum Reverse Leakage Current

Junction Capacitance, VR = 200V

IF = 30A

IF = 60A

IF = 30A, TJ = 125°C

VR = 1000V

VR = 1000V, TJ = 125°C

DUAL DIE ISOTOP® PACKAGE

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise speciﬁed.

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

Maximum Peak Repetitive Reverse Voltage

Maximum Working Peak Reverse Voltage

Maximum Average Forward Current (TC = 92°C, Duty Cycle = 0.5)

RMS Forward Current (Square wave, 50% duty)

Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)

Avalanche Energy (1A, 40mH)

Operating and StorageTemperature Range

Symbol

VR

VRRM

VRWM

IF(AV)

IF(RMS)

IFSM

EAVL

TJ,TSTG

UNIT

Volts

Amps

mJ

°C

APT2x31_30DQ100J

1000

30

39

210

20

-55 to 175

Microsemi Website - http://www.microsemi.com

SOT-227

ISOTOP

®

1

23

4

file # E145592

"UL Recognized"

APT2x31_30DQ100J

DYNAMIC CHARACTERISTICS

053-4216 Rev B 7-2006

New Diode Data Sheet By Darel Bidwell

ZθJC, THERMAL IMPEDANCE (°C/W)

10-5 10-4 10-3 10-2 10-1 1.0

RECTANGULAR PULSE DURATION (seconds)

FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

1.20

1.00

0.80

0.60

0.40

0.20

0

0.5

SINGLE PULSE

0.1

0.3

0.7

0.05

FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL

Peak TJ = PDM x ZθJC + TC

Duty Factor D = t1/t2

t2

t1

PDM

Note:

THERMAL AND MECHANICAL CHARACTERISTICS

MIN TYP MAX

- 25

- 240

- 355

- 4 -

- 305

- 1575

- 9 -

- 135

- 2270

- 27

UNIT

ns

nC

Amps

ns

nC

Amps

ns

nC

Amps

Characteristic

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Symbol

trr

Qrr

IRRM

trr

Qrr

IRRM

trr

Qrr

IRRM

Test Conditions

IF = 30A, diF/dt = -200A/µs

VR = 667V, TC = 25°C

IF = 30A, diF/dt = -200A/µs

VR = 667V, TC = 125°C

IF = 30A, diF/dt = -1000A/µs

VR = 667V, TC = 125°C

IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C

Characteristic / Test Conditions

Junction-to-Case Thermal Resistance

RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)

Package Weight

Maximum Mounting Torque

Symbol

RθJC

VIsolation

WT

Torque

MIN TYP MAX

1.1

2500

1.03

29.2

10

1.1

UNIT

°C/W

Volts

oz

g

lb•in

N•m

D = 0.9

Microsemi reserves the right to change, without notice, the speciﬁcations and information contained herein.

0.291 0.461 0.341

0.00306 0.0463 0.267

Dissipated Power

(Watts)

TJ (°C) TC (°C)

ZEXT are the external thermal

impedances: Case to sink,

sink to ambient, etc. Set to

zero when modeling only

the case to junction.

ZEXT

053-4216 Rev B 7-2006

APT2x31_30DQ100J

TYPICAL PERFORMANCE CURVES

TJ = 125°C

VR = 667V

15A

30A

60A

trr

Qrr

trr

IRRM

400

350

300

250

200

150

100

50

0

30

25

20

15

10

5

0

Duty cycle = 0.5

TJ = 175°C

0 25 50 75 100 125 150 25 50 75 100 125 150 175

1 10 100 200

50

45

40

35

30

25

20

15

10

5

0

1.2

1.0

0.8

0.6

0.4

0.2

0.0

160

140

120

100

80

60

40

20

0

CJ, JUNCTION CAPACITANCE Kf, DYNAMIC PARAMETERS

(pF) (Normalized to 1000A/µs)

IF(AV) (A)

TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)

Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature

VR, REVERSE VOLTAGE (V)

Figure 8. Junction Capacitance vs. Reverse Voltage

100

90

80

70

60

50

40

30

20

10

0

3500

3000

2500

2000

1500

1000

500

0

VF, ANODE-TO-CATHODE VOLTAGE (V) -diF/dt, CURRENT RATE OF CHANGE(A/µs)

Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change

-diF/dt, CURRENT RATE OF CHANGE (A/µs) -diF/dt, CURRENT RATE OF CHANGE (A/µs)

Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 1200

0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200

Qrr, REVERSE RECOVERY CHARGE IF, FORWARD CURRENT

(nC) (A)

IRRM, REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME

(A) (ns)

TJ = 175°C

TJ = -55°C

TJ = 25°C

TJ = 125°C

VR = 667V

60A

30A

15A

TJ = 125°C

VR = 667V

60A

15A

30A

APT2x31_30DQ100J

053-4216 Rev B 7-2006

APT10035LLL

4

3

1

2

5

Zero

1

2

3

4

diF/dt - Rate of Diode Current Change Through Zero Crossing.

IF - Forward Conduction Current

IRRM - Maximum Reverse Recovery Current.

trr - Reverse Recovery Time, measured from zero crossing where diode

Qrr - Area Under the Curve Defined by IRRM and trr.

current goes from positive to negative, to the point at which the straight

line through IRRM and 0.25 IRRM passes through zero.

Figure 9. Diode Test Circuit

Figure 10, Diode Reverse Recovery Waveform and Definitions

0.25 IRRM

PEARSON 2878

CURRENT

TRANSFORMER

diF/dt Adjust

30µH

D.U.T.

+18V

0V

Vr

trr/Qrr

Waveform

Anode 1

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4 H100

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

Anode 2

Anti-parallel Parallel

Cathode 1

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

Cathode 2

Anode 1

Cathode 2 Anode 2

Cathode 1

SOT-227 (ISOTOP®) Package Outline

APT2X30DQ100J APT2X31DQ100J

ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234