LLSD101A-13-F - Diodes, Inc.

DS30067 Rev. A-2 1 of 2 LL / LLSD101A - 101C

LL / LLSD101A - 101C

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

·Low Forward Voltage Drop

·Guard Ring Construction for Transient

Protection

·Low Reverse Recovery Time

·Low Reverse Capacitance

·Case: MiniMELF, Glass

·Terminals: Solderable per MIL-STD-202,

Method 208

·Marking: Cathode Band Only

·Polarity: Cathode Band

·Weight: 0.05 grams (approx.)

Mechanical Data

Maximum Ratings @ TA= 25°C unless otherwise specified

Note: 1. Valid provided that electrodes are kept at ambient temperature.

Electrical Characteristics @ TA= 25°C unless otherwise specified

Characteristic Symbol LL / LLSD101A LL / LLSD101B LL / LLSD101C Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

60 50 40 V

RMS Reverse Voltage VR(RMS) 42 35 28 V

Forward Continuous Current (Note 1) IFM 15 mA

Non-Repetitive Peak Forward Surge Current @ t £1.0s

@ t = 10msIFSM 50

2.0

Power Dissipation (Note 1) Pd400 mW

Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 375 K/W

Operating and Storage Temperature Range Tj,T

STG -65 to +175 °C

Characteristic Symbol Min Max Unit Test Condition

Maximum Forward Voltage Drop LL / LLSD101A

LL / LLSD101B

LL / LLSD101C

LL / LLSD101A

LL / LLSD101B

LL / LLSD101C

VFM ¾

0.41

0.40

0.39

1.00

0.95

0.90

IF= 1.0mA

IF= 15mA

Maximum Peak Reverse Current LL / LLSD101A

LL / LLSD101B

LL / LLSD101C

IRM ¾200 nA

VR= 50V

VR= 40V

VR= 30V

Junction Capacitance LL / LLSD101A

LL / LLSD101B

LL / LLSD101C

Cj¾

2.0

2.1

2.2

pF VR= 0V, f = 1.0MHz

Reverse Recovery Time trr ¾1.0 ns IF= IR= 5.0mA,

Irr = 0.1 x IR,R

L= 100W

MiniMELF

Dim Min Max

A3.30 3.70

B1.30 1.60

C0.28 0.50

All Dimensions in mm