Q4010LTTPV - Littelfuse, Inc.

Thyristor Product Catalog +1 972-580-7777

U.L. RECOGNIZED

File #E71639

Quadrac

Internally Triggered Triacs (4 A to 15 A)

General Description

Teccor’s Quadrac devices are triacs that include a diac trigger

mounted inside the same package. This device, developed by

Teccor, saves the user the expense and assembly time of buying

a discrete diac and assembling in conjunction with a gated triac.

Also, the alternistor Quadrac device (QxxxxLTH) eliminates the

need for a snubber network.

The Quadrac device is a bidirectional AC switch and is gate con-

trolled for either polarity of main terminal voltage. Its primary pur-

pose is for AC switching and phase control applications such as

speed controls, temperature modulation controls, and lighting

controls where noise immunity is required.

Triac current capacities range from 4 A to 15 A with voltage

ranges from 200 V to 600 V. Quadrac devices are available in the

TO-220 package.

The TO-220 package is electrically isolated to 2500 V rms from

the leads to mounting surface. 4000 V rms is available on special

order. This means that no external isolation is required, thus

eliminating the need for separate insulators and insulator-mount-

ing steps and saving dollars over “hot tab” devices.

All Teccor triac and diac chips have glass-passivated junctions to

ensure long-term device reliability and parameter stability.

Variations of devices in this data sheet are available for custom

design applications. Consult the factory for more information.

Features

• Glass-passivated junctions

• Electrically-isolated package

• Internal trigger diac

• High surge capability — up to 200 A

• High voltage capability — 200 V to 600 V

TO-220

MT2 MT1

Quadrac Data Sheets

+1 972-580-7777 Thyristor Product Catalog

Specific Test Conditions

[∆V±] — Dynamic breakback voltage (forward and reverse)

∆VBO — Breakover voltage symmetry

CT — Trigger firing capacitance

di/dt — Maximum rate-of-change of on-state current

dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open

dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM

and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate

unenergized

I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms

for fusing

IBO — Peak breakover current

IDRM — Peak off-state current gate open; VDRM = maximum rated value

IGTM — Peak gate trigger current (10 µs Max)

IH — Holding current; gate open

IT(RMS) — RMS on-state current, conduction angle of 360°

ITSM — Peak one-cycle surge

tgt — Gate controlled turn-on time

VBO — Breakover voltage (forward and reverse)

VDRM — Repetitive peak blocking voltage

VTM — Peak on-state voltage at maximum rated RMS current

General Notes

• All measurements are made at 60 Hz with resistive load at an ambi-

ent temperature of +25 °C unless otherwise specified.

• Operating temperature range (TJ) is -40 °C to +125 °C.

• Storage temperature range (TS) is -40 °C to +125 °C.

• Lead solder temperature is a maximum of +230 °C for 10 seconds

maximum; ≥1/16" (1.59 mm) from case.

• The case temperature (TC) is measured as shown on dimensional

outline drawings. See “Package Dimensions” section of this

catalog.

Electrical Specification Notes

(1) For either polarity of MT2 with reference to MT1

(2) See Figure E3.1 for IH versus TC.

(3) See Figure E3.4 and Figure E3.5 for iT versus vT

(4) See Figure E3.9 for surge ratings with specific durations.

IT(RMS)

Part No.

VDRM IDRM VTM

Trigger Diac Specifications (T–MT1)

Isolated ∆VBO VBO [∆V± ]I

BO CT

(5)

TO-220

(1)

Volts

(1) (10)

mAmps

(1) (3)

Volts

(7)

Volts

(6)

Volts

(6)

Volts µAmps

(11)

µFarads

TC =

25 °C

TC =

100 °C

TC =

125 °C TC = 25 °C

See “Package Dimensions” section

for variations. (12) MIN MAX MAX MAX MIN MAX MIN MAX MAX

Q2004LT 200 0.05 0.5 21.6 333 43 525 0.1

Q4004LT 400 0.05 0.5 21.6 333 43 525 0.1

Q6004LT 600 0.05 0.5 21.6 333 43 525 0.1

Q2006LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4006LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6006LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4006LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6006LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q2008LT 200 0.05 0.5 21.6 333 43 525 0.1

Q4008LT 400 0.05 0.5 21.6 333 43 525 0.1

Q6008LT 600 0.05 0.5 21.6 333 43 525 0.1

Q4008LTH 400 0.05 0.5 21.6 333 43 525 0.1

Q6008LTH 600 0.05 0.5 21.6 333 43 525 0.1

10 A

Q2010LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4010LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6010LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q4010LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1

Q6010LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1

15 A

Q2015LT 200 0.05 0.5 21.6 333 43 525 0.1

Q4015LT 400 0.05 0.5 21.6 333 43 525 0.1

Q6015LT 600 0.05 0.5 21.6 333 43 525 0.1

Q4015LTH 400 0.05 0.5 21.6 333 43 525 0.1

Q6015LTH 600 0.05 0.5 21.6 333 43 525 0.1

MT1 MT2

Data Sheets Quadrac

Thyristor Product Catalog +1 972-580-7777

(5) See Figure E3.6, Figure E3.7, and Figure E3.8 for current rating at

specific operating temperature.

(6) See Figure E3.2 and Figure E3.3 for test circuit.

(7) ∆VBO = [+ VBO] - [- VBO]

(8) See Figure E3.7 and Figure E3.8 for maximum allowable case

temperature at maximum rated current.

(9) Trigger firing capacitance = 0.1 µF with 0.1 µs rise time

(10) TC = TJ for test conditions in off state

(11) Maximum required value to ensure sufficient gate current

(12) See package outlines for lead form configurations. When ordering

special lead forming, add type number as suffix to part number.

Electrical Isolation

All Teccor isolated Quadrac packages withstand a minimum high

potential test of 2500 V ac rms from leads to mounting tab over

the operating temperature range of the device. The following iso-

lation table shows standard and optional isolation ratings.

* UL Recognized File #E71639

**For 4000 V isolation, use “V” suffix in part number.

IHITSM dv/dt(c) dv/dt tgt I2tIGTM di/dt

(1) (2)

mAmps

(4) (8)

Amps

(1) (5) (8)

Volts/µSec

(1)

Volts/µSec

(6) (9)

µSec Amps2Sec Amps

(9)

Amps/µSec

TC =

100 °C

TC =

125 °C

MAX 60/50Hz MIN MIN TYP

40 55/46 375 50 312.5 1.2 50

40 55/46 350 50 312.5 1.2 50

50 80/65 4 150 100 3 26.5 1.5 70

50 80/65 4 125 85 3 26.5 1.5 70

50 80/65 25 575 450 3 26.5 1.5 70

50 80/65 25 425 350 3 26.5 1.5 70

60 100/83 4175 120 341 1.5 70

60 100/83 4150 100 341 1.5 70

60 100/83 25 575 450 341 1.5 70

60 100/83 25 425 350 341 1.5 70

60 120/100 4 200 150 3 60 1.5 70

60 120/100 4 175 120 3 60 1.5 70

60 120/100 30 925 700 3 60 1.5 70

60 120/100 30 775 600 3 60 1.5 70

70 200/167 4300 200 3166 1.5 100

70 200/167 4200 150 3166 1.5 100

70 200/167 30 925 700 3166 1.5 100

70 200/167 30 775 600 3166 1.5 100

Thermal Resistance (Steady State)

RθJC [RθJA] °C/W (TYP)

TYPE Isolated TO-220

4A 3.6 [50]

6A 3.3

8A 2.8

10 A 2.6

15 A 2.1

Electrical Isolation

from Leads to Mounting Tab *

VACRMS TYPE

2500 Standard

4000 Optional **

Quadrac Data Sheets

+1 972-580-7777 Thyristor Product Catalog

Figure E3.1 Normalized DC Holding Current versus Case Temperature

Figure E3.2 Test Circuit

Figure E3.3 Test Circuit Waveforms

Figure E3.4 On-state Current versus On-state Voltage (Typical)

(4 A to 10 A)

Figure E3.5 On-state Current versus On-state Voltage (Typical) (15 A)

Figure E3.6 Maximum Allowable Ambient Temperature versus

On-state Current

Case Temperature (TC) – ˚C

-40 -15 +25 +65 +105

IH(TC = 25 ˚C)

2.0

1.5

1.0

INITIAL ON-STATE CURRENT

= 200 mA DC 4 A to 10 A

= 400 mA DC 15 A

Ratio of

+125

120 V

60 Hz

D.U.T. MT2

MT1

VCCT = 0.1 µF

∆V+

-V

∆V-

00 0.6 0.8 1.0 1.2 1.4 1.6

Positive or Negative

Instantaneous On-state Current (iT) – Amps

Positive or Negative

Instantaneous On-state Voltage (vT) – Volts

6 A, 8 A, and 10 A

4 A

= 25 ˚C

000.6 0.8 1.0 1.2 1.4 1.6

Positive or Negative

Instantaneous On-state Current (iT) – Amps

15 A

TC = 25˚C

1.8

Positive or Negative

Instantaneous On-state Voltage (vT) – Volts

120

100

RMS On-state Current [I

T(RMS)

] – Amps

Maximum Allowable Ambient Temperature (T

) – ˚C

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

4 A

Data Sheets Quadrac

Thyristor Product Catalog +1 972-580-7777

Figure E3.7 Maximum Allowable Case Temperature versus

On-state Current (4 A)

Figure E3.8 Maximum Allowable Case Temperature versus

On-state Current (6 A to 15 A)

Figure E3.9 Peak Surge Current versus Surge Current Duration

Figure E3.10 Power Dissipation (Typical) versus On-state Current (4 A)

Figure E3.11 Power Dissipation (Typical) versus On-state Current

(6 A to 10 A and 15 A)

Figure E3.12 Normalized diac VBO versus Junction Temperature

RMS On-state Current [I

T(RMS)

] – Amps

0 .5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Maximum Allowable Case Temperature (T

) – ˚C

CURRENT WAVEFORM: Sinusoidal

LOAD: Resistive or Inductive

CONDUCTION ANGLE: 360

CASE TEMPERATURE: Measured

as shown on Dimensional Drawings

130

120

110

100

600

4 A

RMS On-state Current [IT(RMS)] – Amps

02.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0

Maximum Allowable Case Temperature (TC) – ˚C

CURRENT WAVEFORM: Sinusoidal

LOAD: Resistive or Inductive

CONDUCTION ANGLE: 360˚

CASE TEMPERATURE: Measured

as shown on Dimensional Drawings

130

120

110

100

6 A

10 A

8 A

15 A

200

120

1 2 3 4 5 6 8 10 20 3040 60 80100 200 300 600 1000

100

Surge Current Duration – Full Cycles

Peak Surge (Non-repetitive)

On-state Current (ITSM) – Amps

SUPPLY FREQUENCY: 60 Hz Sinusoidal

LOAD: Resistive

RMS ON-STATE CURRENT [IT(RMS)]: Maximum

Rated Value at Specified Case Temperature

NOTES:

1) Gates control may be lost during

and immediately following surge

current interval.

2) Overload may not be repeated until

junction temperature has returned to

steady state rated value.

15 A

10 A

8 A

6 A

4 A

Average On-state Power Dissipation [PD(AV)] – Watts

RMS On-state Current [IT(RMS)] – Amps

4.0

3.0

2.0

1.0

001.0 2.0 3.0 4.0 5.0

CURRENT WAVEFORM: Sinusoidal

LOAD: Resistive or Inductive

CONDUCTION ANGLE: 360˚

4 A

CURRENT WAVEFORM: Sinusoidal

LOAD: Resistive or Inductive

CONDUCTION ANGLE: 360˚

016

RMS On-state Current [I

T(RMS)

] – Amps

Average On-state Power Dissipation [P

D(AV)

] – Watts

15 A

6 A to 10 A

-8

-6

-4

-2

-40 -20 0 +20 +40 +60 +80 +100 +120 +140

Junction Temperature (TJ) – ˚C

Percentage of VBO Change – %

Notes