N-CHANNEL IRFM014/10 POWER MOSFETS FEATURES sonmas Lower Rosjon) + Improved inductive ruggedness Fast switching times * Rugged polysilicon gate cell structure + Lower input capacitance + Extended safe operating area Improved high temperature reliability = 1. Gate 2. Drain 3. Source PRODUCT SUMMARY Part Number BVoss | Absjon) Ib IRFM014 60V 0.29 2.7A iRFM010 50V 0.20 2.7A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRFM014 IRFM010 Unit Drain-Source Voltage (1} Voss 60 50 Vde Drain-Gate Voltage (Ras=1.0M2 )(1) VocR 60 50 Vdc Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25C Ip 2.7 Adc Continuous Drain Current Tc=100C ID 1.7 Adc Drain Current - Pulsed (3) lom 22 Adc Single Pulsed Avalanche Energy (4) Eas 100 mJ Avalanche Current las 2.7 A Total Power Dissipation at Tc=25 C Pp 3.125 Watts Derate above 25 G 0.025 WirG Operating and Storage Junction Temperature Range 1 1st 88 to +150 c Maximum Lead Temp. for Soldering 3 Purposes, 1/8" from case for 5 seconds " $00 Notes : (1) Ts=25C to 150C (2) Pulse test : Pulse width<300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by junction temperature (4) L=16mH, Vaa=25V, Ra=25.0,, Starting Tu=25C en 986 ELECTRONICS ME 7964142 9029525 TAT ae Oe N-CHANNEL IRFM014/10 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min | Typ | Max | Units Test Conditions BVpss | Drain-Source Breakdown Voltage IRFMO014 60 - - V_ | Ves=0V, tp=2504A IRFM010 50 - - Vv Vasith) | Gate Threshold Voltage 2.0 - 4.0 V_ | Vos=Vas, Iln=250A Iess_ | Gate-Source Leakage Forward - - 100 | nA | Vas=20V less | Gate-Source Leakage Reverse - - | -100]) nA | Ves=-20V foss Zero Gate Voltage Drain Current - - 250 | #A | Vos=Max. Rating, Vas=0V - - | 1000) #A | Vos=0.8 Max. Rating, Ves=0V, Tc=150C Rospn) | Static Drain-Source On Resistance) - - 0.2 | Q | Vaes=10V, tp=1.4A Qfs Forward Transconductance (2) 1.9 - - U_ | Vos=25V, ID=1.4A Ciss Input Capacitance : 300 - pF Coss Output Capacitance - 160 - pF | Vas=0V, Vos=25V, f=1MHz Crss_| Reverse Transfer Capacitance - 29 - pF tafon) Turn-On Delay Time - 10 - ns | Voo=0.5 BVoss, lo=2.7A, Zo=240 tr Rise Time - 50 - ns | (MOSFET switching times are essentially tatof} | Turn-Off Delay Time - 13 : ns | independent of operating temperature) tt Fall Time - 19 - ns Qg Total Gate Charge -T- 11 nC | Ves=10V, lo=2.7A, Vos=0.8 Max. Rating (Gate-Source Plus Gate-Drain) (Gate charge is essentially independent of Qgs j Gate-Source Charge - 3.1 - nC | operating temperature) Qad Gate-Drain ("Miller") Charge - 5.8 - nc THERMAL RESISTANCE Symbol Characteristics IRFM014 Units Remark Rtnic | Juntion-to-case MAX 40 KW Rina | Junction-to-Ambient MAX 60 KW | Free Air Operation Notes : (1) Tu=25C to 150C (2) Pulse test : Pulse width<300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature a ELECTRONICS Me 7964142 O0295eb Jeb N-CHANNEL IRFM014/10 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min| Typ | Max | Units Test Conditions Is Continuous Source Current ; ; 97 A | Modified MOSFET : (Body Diode) symbol showing the ) Pulse Source Current integral reverse ook Ism - - 22 A_ | P-N junction rectifier {Body Diode) (3) Vso Diode Forward Voltage (2) - - 1.6 V_ | Tu=25C, Is=2.7A, Vas=0V tr Reverse Recovery Time - 70 | 140 | ns | Ty=25C, IF=2.7A, die/dt=100A/nS Notes : (1) Tu=25C to150C (2) Pulse test : Pulse width < 300s, Duty Cycle<2% (3) Repetitive rating : Pulse width limited by max. junction temperature ELECTRONICS ME 7964142 0029527 4b