SOT89 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - NOVEMBER 1995 ✪
PARTMARKING DETAIL - P1
COMPLEMENTARY TYPE - FCX491
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -80 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Base Current IB-200 mA
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V(BR)CBO -80 V IC=-100µA, IE=0
V(BR)CEO -60 V IC=-10mA, IB=0*
V(BR)EBO -5 V IE=-100µA, IC=0
Collector Cut-Off Current ICBO -100 nA VCB
=-60V
Collector -Emitter Cut-Off
Current
ICES -100 nA VCES=-60V
Emitter Cut-Off Current IEBO -100 nA VEB
=-4V, IC=0
Saturation Voltages VCE(sat) -0.3
-0.6
V
V
IC=-500mA,
IB=-50mA*
IC=-1A, IB=-100mA*
VBE(sat) -1.2 V IC=-1A, IB=-100mA*
Base-Emitter Turn-on Voltage VBE(on) -1.0 V IC=-1A, VCE
=-5V*
Static Forward Current Transfer
Ratio
hFE 100
100
80
15
300
IC=-1mA, VCE
=-5V*
IC=-500mA, VCE
=-5V*
IC=-1A, VCE
=-5V*
IC=-2A, VCE
=-5V*
Transition Frequency fT150 MHz IC=-50mA, VCE
=-10V
f=100MHz
Output Capacitance Cobo 10 pF VCB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT591 datasheet
FCX591
3 - 92
C
C
B
E
