NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant BPY 62 Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm * Hohe Linearitat * Hermetisch dichte Metallbauform (TO-18) mit Basisanschluss, geeignet bis 125 C * Gruppiert lieferbar * Especially suitable for applications from 400 nm to 1100 nm * High linearity * Hermetically sealed metal package (TO-18) with base connection, suitable up to 125 C * Available in groups Anwendungen Applications * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" * Photointerrupters * Industrial electronics * For control and drive circuits Typ Type Bestellnummer Ordering Code Fotostrom , Ee= 0.5 mW/cm2, = 950 nm, VCE = 5 V Photocurrent IPCE (mA) BPY 62 Q60215Y0062 > 0.5 BPY 62-3/4 Q60215Y5198 0.8...2.5 BPY 62-4 Q60215Y1113 1.25...2.5 2009-07-24 1 BPY 62 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 125 C Kollektor-Emitterspannung Collector-emitter voltage VCE 35 V Kollektorstrom Collector current IC 100 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 200 mA Emitter-Basisspannung Emitter-base voltage VEB 7 V Verlustleistung, TA = 25 C Total power dissipation Ptot 200 mW Warmewiderstand Thermal resistance RthJA 500 K/W 2009-07-24 2 BPY 62 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 830 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 400 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 0.11 mm2 Abmessung der Chipflache Dimensions of chip area LxB LxW 0.5 x 0.5 mm x mm Halbwinkel Half angle 8 Grad deg. IPCB IPCB 5.5 17 A A CCE CCB CEB 7.5 14 19 pF pF pF ICEO 1 ( 50) nA Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 20 V, E = 0 2009-07-24 3 BPY 62 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Wert Value -2 -3 Einheit Unit -4 -5 0.5...1.0 0.8...1.6 2.4 3.8 1.25...2.5 5.8 2.0 9.6 mA mA Fotostrom Photocurrent Ee= 0.5 mW/cm2, = 950 nm, VCE = 5 V IPCE Ev = 1000 Ix, Normlicht/standard light A, IPCE VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k tr, tf 5 7 9 12 s Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 VCEsat 150 150 160 180 mV Stromverstarkung Current gain Ee = 0.5 mW/cm2, VCE =5 V I PCE --------I PCB 140 220 340 550 - 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. 2009-07-24 4 BPY 62 Relative Spectral sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA) 100 % 90 S re l 80 70 60 50 40 30 20 10 0 400 500 600 700 800 900 1000 nm 1100 Output Characteristics IC = f (VCE), IB = Parameter Output Characteristics Dark Current IC = f (VCE), IB = Parameter ICEO = f (VCE), E = 0 10 nA I CEO 1 0.1 0.01 0 5 10 15 20 25 30 V 35 V CE Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Dark Current ICEO = f (TA), VCE = 20 V, E = 0 Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 8 10000 pF nA 7 1000 CCE I CEO 6 100 5 10 4 3 1 2 0.1 1 0.01 -25 0 25 50 75 TA C 100 0 1E-03 1E-02 1E-01 1E+00 1E+01 VCE 2009-07-24 5 1E+02 V BPY 62 Collector-Base Capacitance CCB = f (VCB), f = 1 MHz, E = 0 Emitter-Base Capacitance CEB = f (VEB), f = 1 MHz, E = 0 22 16 pF 20 pF 14 CCB CEB 12 18 16 14 10 12 8 10 6 8 6 4 4 2 2 0 0 1E-03 1E-02 1E-01 1E+00 1E+01 VCB V 1E+02 1E-03 1E-02 1E-01 1E+01 VEB Directional Characteristics Srel = f () 2009-07-24 1E+00 6 V 1E+02 BPY 62 Mazeichnung Package Outlines Radiant sensitive area 0.9 1.1 (0 (0 .04 .03 5) 14.5 (0.571) 5.1 (0.201) 12.5 (0.492) 4.8 (0.189) 6.2 (0.244) 3) E C B o5.6 (0.220) o5.3 (0.209) 5.4 (0.213) GMOY6019 Mae in mm (inch) / Dimensions in mm (inch). 2009-07-24 3) .04 5) .03 1. (0 9 0. 0 1( 2.54 (0.100) spacing o0.45 (0.018) o4.6 (0.181) (2.7 (0.106)) o4.8 (0.189) Chip position 7 BPY 62 Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2009-07-24 8