BPY 62
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
2009-07-24 1
Wesentliche Merkmale
Speziell geeignet für Anwendunge n im Bereich
von 400 nm bis 1100 nm
Hohe Linearität
Hermetisch dichte Metallbauform (TO-18) mit
Basisanschluss, geeignet bis 125 °C
Gruppiert lieferbar
Anwendungen
Lichtschranken für Gleich- und
Wechsellichtbetrieb
Industrieelektronik
„Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code Fotostrom , Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V
Photocurrent
IPCE (mA)
BPY 62 Q60215Y0062 > 0.5
BPY 62-3/4 Q60215Y5198 0.82.5
BPY 62-4 Q60215Y1113 1.252.5
Features
Especially suitable for applications from
400 nm to 1100 nm
High linearity
Hermetically sealed metal package (TO-18)
with base connection, suitable up to 125 °C
Available in groups
Applications
Photointerrupters
Industrial electronics
For control and drive circuits
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BPY 62
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 + 125 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 35 V
Kollektorstrom
Collector cu rr ent IC100 mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current ICS 200 mA
Emitter-Basisspannung
Emitter-base voltage VEB 7V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 200 mW
Wärmewiderstand
Thermal resistance RthJA 500 K/W
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2009-07-24 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 830 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ400 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A0.11 mm2
Abmessung der Chipfläche
Dimensions of chip area L × B
L × W0.5 ×0.5 mm × mm
Halbwinkel
Half angle ϕ±8Grad
deg.
Fotostrom der Kollektor-Basis-Fotodiode
Photocurrent of collector-base photodiode
Ee = 0.5 mW/cm2, VCB = 5 V
Ev = 1000 Ix, Normlicht/standard light A,
VCB = 5 V
IPCB
IPCB
5.5
17 μA
μA
Kapazität
Capacitance
VCE = 0 V, f = 1 MHz, E = 0
VCB = 0 V, f = 1 MHz, E = 0
VEB = 0 V, f = 1 MHz, E = 0
CCE
CCB
CEB
7.5
14
19
pF
pF
pF
Dunkelstrom
Dark current
VCE = 20 V, E = 0
ICEO 1 (50) nA
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BPY 62
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-2 -3 -4 -5
Fotostrom
Photocurrent
Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V
Ev = 1000 Ix, Normlicht/standard light A,
VCE = 5 V
IPCE
IPCE
0.51.0
2.4 0.81.6
3.8 1.252.5
5.8 2.0
9.6 mA
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf57 9 12μs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3,
Ee = 0.5 mW/cm2
VCEsat 150 150 160 180 mV
Stromverstärkung
Current gain
Ee = 0.5 mW/cm2, VCE =5 V
140 220 340 550
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1) IPCEmin is the min. photocurrent of the sp ecified group.
IPCE
IPCB
---------
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Relative Spectral sensitivity
Srel = f (λ)
Output Characteristics
IC = f (VCE), IB = Parameter
Photocurrent
IPCE/IPCE25o = f (TA), VCE = 5 V
0
10
20
30
40
50
60
70
80
90
100
400 500 600 700 800 900 1000 1100
Srel
%
nm
λ
Photocurrent
IPCE = f (Ee), VCE = 5 V
Output Characteristics
IC = f (VCE), IB = Parameter
Dark Current
ICEO = f (TA), VCE = 20 V, E = 0
0.01
0.1
1
10
100
1000
10000
-250255075100
T
A
nA
I
CEO
°C
Total Power Dissipation
Ptot = f (TA)
Dark Current
ICEO = f (VCE), E = 0
Collector-Emitter Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
0.01
0.1
1
10
0 5 10 15 20 25 30 35
ICEO
VCE
V
nA
0
1
2
3
4
5
6
7
8
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02
CCE
pF
V
VC
E
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2009-07-24 6
Collector-Base Capacitance
CCB = f (VCB), f = 1 MHz, E = 0
Directional Characteristics
Srel = f (ϕ)
0
2
4
6
8
10
12
14
16
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02
CCB
pF
V
V
C
B
Emitter-Base Capacitance
CEB = f (VEB), f = 1 MHz, E = 0
0
2
4
6
8
10
12
14
16
18
20
22
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02
CEB
pF
V
VE
B
BPY 62
2009-07-24 7
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
ø5.6 (0.220)
ø5.3 (0.209)
2.54 (0.100)
spacing
ø4.8 (0.189)
E C B
(2.7 (0.106))
5.1 (0.201)
4.8 (0.189)
14.5 (0.571)
12.5 (0.492)
ø0.45 (0.018)
Radiant
GMOY6019
ø4.6 (0.181)
5.4 (0.213)
6.2 (0.244)
Chip position sensitive area
0.9 (0.035)
1.1 (0.043)
1.1 (0.043)
0.9 (0.035)
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BPY 62
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assu red characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in que stion please contact our Sales Organizatio n.
Packing
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incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be im planted in the human body, or (b) to sup port and/or maintain
and sustain human life. If they fail, it is reas onable to assume that the health of the user may be endangered.
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves