HE7601SG
GaAlAs Infrared Emitting Diode
ADE-208-996 (Z)
1st Edition
Dec. 2000
Description
The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure.
It is suitable as a light source for optical control devices and sensors.
Features
High efficiency and high output power
1
Internal CircuitPackage Type
HE7601SG: SG1
2
HE7601SG
2
Absolute Maximum Ratings (TC = 25°C)
Item Symbol Value Unit
Forward current IF250 mA
Reverse voltage VR3V
Operating temperature Topr –20 to +60 °C
Storage temperature Tstg –40 to +90 °C
Optical and Electrical Characteristics (TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Optical output power PO30——mWI
F
= 200 mA
Peak wavelength λp 740 770 800 nm IF = 200 mA
Spectral width ∆λ 50 nm IF = 200 mA
Forward voltage VF 2.5 V IF = 200 mA
Reverse current IR 100 µAV
R
= 3 V
Capacitance Ct 30 pF VR = 0 V, f = 1 MHz
Rise time tr 10 ns IF = 50 mA
Fall time tf 10 ns IF = 50 mA
HE7601SG
3
Typical Characteristic Curves
50
40
30
20
10
00 50 100 150 200 250
Optical output power, PO (mW)
Forward current, IF (mA)
40°C
0°C
25°C
60°C
Optical Output Power vs. Forward Current
250
200
150
100
50
00 0.5 1.0 1.5 2.0 2.5
25°C
60°C
Forward current, IF (mA)
Forward voltage, VF (V)
Forward Current vs. Forward Voltage
100
80
60
40
20
040 20 λp2040
Relative radiation intensity (%)
Wavelength, λ (nm)
Spectral Distribution
Relative intensity
20 ns/div
Current pulse
Optical pulse
Pulse Response
TC = 20°C
TC = 20°C
TC = 25°CTC = 25°C
HE7601SG
4
Typical Characteristic Curves (cont)
60
30
90100 80 60 40 20 0 20 40 60 80
100
80
60
40
20
0
Relative radiation intensity (%) Angle, θ (deg.)
Relative radiation intensity (%)
Angle, θ (deg.)
Radiation Pattern
0
TC = 25°C
HE7601SG
5
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
IR/SG1
0.25 g
Unit: mm
2.54 ± 0.35
(2 – 1.05)
φ
1.0 ± 0.2
1.0 ± 0.2
45° ± 5°
φ
5.4 ± 0.2
φ
4.65 ± 0.2
φ
4.0 ± 0.2
2 – 0.45 ± 0.1
φ
0.65 ± 0.2
2.7 ± 0.2
0.55 ± 0.2
14 ± 2
12
HE7601SG
6
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The
laser beam shall be observed or adjusted through infrared camera or equivalent.
HE7601SG
7
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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