PRELIMINARY
3.3V 16K/32K x 36
FLEx36™ Synchronous Dual-Port Static RAM
7C09579V: 10/97
Revision: May 1, 2000
CY7C09569V
CY7C09579V
Cypress Semiconductor Corporation 3901 North First Street San Jose CA 95134 408-943-2600
Ma y 1, 2 000
1
Features
True dual-ported memory cells which allow simulta-
neous access of the sam e me mory location
Two Flow-Thr ough/Pipeline d devices
16K x 36 organi zation (CY7C09569V)
32K x 36 organi zation (CY7C09579V)
0.25-micron CMOS f or optimum speed/power
Three modes
Flow-Through
—Pipelined
—Burst
Bus- Mat ching Capa bili ties on Right Port (x36 t o x18 or
x9)
Byte-Select Capabili ties on Left Port
133-MHz Pipelined Operation
High-speed clock to data access 4.1/5/ 6/8 ns
3.3V Low operating power
Active = 260 mA (typi cal)
St a ndby = 10 µA (typical)
Fully synchronous interface for ease of use
Bur st counters incremen t addresses internally
Shorten cycle times
Minimize bus noise
Supported in Flow -Through and Pipelined m odes
Counter Address Read Back via I/O lines
Single Chip Enable
Automatic power-down
Commercial and Ind ustr ial Temperature Ranges
Compact pac kage
144-Pin TQFP (20 x 20 x 1.4 mm)
172-Ball BG A (1.0 mm pitch) (15 x 15 x .51 mm)
Note:
1. A0–A13 for 16K; A0–A14 for 32K devices.
Logic Block Diagram
R/WL
B0–B3
OEL
FT/PipeL
I/O18L–I/O26L
A0–A13/14L
CLKL
ADSL
CNTENL
CNTRSTL
A0–A13/14R
CLKR
ADSR
CNTENR
CNTRSTR
Counter/
Address
Register
Decode
True Dual-Port e d
RAM Array
Counter/
Address
Register
Decode
9
[1] [1]
14/15 14/15
I/O27L–I/O35L 9
I/O0L–I/O8L 9
I/O9L–I/O17L 9
CEL
I/O
Control
Left
Port
Control
Logic
R/WR
OER
FT/PipeR
9
9
I/OR
9
9
CER
I/O
Control
Right
Port
Control
Logic
Bus
Match 9/18/36
BM
SIZE
BE
Fo r the most recent information, visit the Cypress web site at www .cypress.com
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
2
Functional Description
The CY7C09569V and CY7C09579V are high-speed 3.3V
synchr onou s CMOS 16K and 32K x 36 dual -port static RAMs .
Two port s are p ro vided, permitti ng indep endent , si mul taneous
access f or reads and writes to any location in memory. Regis-
ters on control, address, and data lines allow for minimal set-
up and hol d times. In pipelined out put mode, data is regi stered
for decreased cycle time. Clock to data valid tCD2 = 4.1 ns
(pipelined). Flow-through mode can also be used to bypass
the pipelined output register to eliminate access latency. In
flow-thr ough m ode data will be available tCD1 = 10. 5 ns after
the address is c locke d into t he de vice. Pipelined output or f lo w-
through mode is selected vi a the FT/Pipe pin.
Each port cont ains a b urst co unt er on the input addr ess regi s-
ter. The internal writ e puls e width is independent of the exter-
nal R/W LOW duration. The internal write pulse is self-timed
to allow t he shortest possible cycle times.
A HIGH on CE for one cl ock cy cl e will po wer do wn the i nternal
circuitry to reduce the static power consumption. In the pipe-
lined mode, one cycle is required w ith CE LOW to re acti vate
the outputs.
Counter Enable Inputs ar e provided to stal l the oper ation of the
address i nput and utilize the internal address generat ed by the
internal counter for fast interleaved memory applications. A
ports burst counter is loaded with the ports Address Strobe
(ADS). When the por ts Count Enable (CNTEN) is asserted,
the address counter will increment on each LOW-to-HIGH
transition of that ports clock signal. This will read/write one
word f rom/in to each su cces siv e add ress lo catio n until CNTEN
is deasserted. The counter can address the entire memory
array and wil l lo op back to the sta rt. Count er Reset (CNT RST)
is used to re set the burst counter.
All parts are available in 144-Pin Thin Quad Plastic Flatpack
(TQFP) and 172-Ball Ball Grid Array (BG A) p ackages.
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
3
Pin Configurations
Notes:
2. This pin is A14L for CY7C09579V.
3. This pin is A14R for CY7C09579V.
144-PinThin Quad Flatpack (TQFP)
Top View
I/O32L
I/O33R
I/O23L
I/O33L 2
3
4
I/O34L I/O34R
5
I/O35L I/O35R
6
A0L A0R
7
A1L A1R
8
A2L A2R
9
A3L A3R
10
A4L A4R
11
A5L A5R
12
A6L A6R
13
A7L
108
A7R
14
B0
107
BM
15
B1
106
SIZE
16
B2
105
BE
17
B3
104
vss
18
OEL
103
OER
19
R/WL
102
R/WR
20
VDD
101
VDD
21
VSS
100
VSS
22
VSS
99
VSS
23
CEL
98
CER
24
CLKL
97
CLKR
25
ADSL
96
ADSR
26
CNTRSTL
95
CNTRSTR
27
CNTENL
94
CNTENR
28
FT/PIPEL
93
FT/PIPER
29
A8L
92
A8R
30
A9L
91
A9R
31
A10L
90
A10R
32
A11L
89
A11R
33
A12L
88
A12R
34
A13L
87
A13R
35
NC
86
NC
36
I/O26L
85
I/O26R
I/O25L
84
I/O25R
I/O24L
83
I/O24R
82
81
41
42
43
44
I/O22L I/O31L
45
VSS VSS
46
I/O21L I/O30L
47
I/O20L I/O29L
48
I/O19L I/O28L
49
I/O18L I/O27L
50
VDD VDD
51
I/O8L I/O17L
52
I/O7L I/O16L
53
I/O6L I/O15L
54
I/O5L I/O14L
55
VSS VSS
56
I/O4L I/O13L
57
I/O3L I/O12L
58
I/O2L
143
I/O11L
59
I/O1L
142
I/O10L
60
I/O0L
141
I/O9L
61
I/O0R
140
I/O9R
62
I/O1R
139
I/O10R
63
I/O2R
138
I/O11R
64
I/O3R
137
I/O12R
65
I/O4R
136
I/O13R
66
VSS
135
VSS
67
I/O5R
134
I/O14R
68
I/O6R
133
I/O15R
69
I/O7R
132
I/O16R
70
I/O8R
131
I/O17R
71
VDD
130
VDD
72
I/O18R
129
I/O27R
123
I/O19R
128
I/O28R
122
I/O20R
127
I/O29R
121
I/O21R
126
I/O30R
120
VSS
125
VSS
119
I/O22R
124
I/O31R
118
I/O23R I/O32R
117
116
37
38
39
40
80
79
78
77
76
75
74
73
115
114
113
112
111
110
109
144
1
CY 7C09569 V ( 16K x 36)
CY 7C09579 V ( 32K x 36)
[2] [3]
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
4
Pin Configurations (continued)
172 - B a ll B a ll G r id Ar ray (B G A )
Top View
1234567891011121314
AI/O32L I/O30L NC VSS I/O13L VDD I/O11L I/O11R VDD I/O13R VSS NC I/O30R I/O32R
BA0L I/O33L I/O29 I/O17L I/O14L I/O12L I/O9L I/O9R I/O12R I/O14R I/O17R I/O29R I/O33R A0R
CNC A1L I/O31L I/O27L NC I/O15L I/O10L I/O10R I/O15R NC I/O27R I/O31R A1R NC
DA2L A3L I/O35L I/O34L I/O28L I/O16L VSS VSS I/O16R I/O28R I/O34R I/O35R A3R A2R
EA4L A5L NC B0L NC NC NC NC BM NC A5R A4R
FVDD A6L A7L B1L NC NC SIZE A7R A6R VDD
GOEL B2L B3L CEL CER VSS BE OER
HVSS R/WLA8LCLKL CLKR A8R R/WR VSS
JA9L A10L VSS ADSL NC NC ADSR VSS A10R A9R
KA11L A12L NC CNTRSTL NC NC NC NC CNTRSTR NC A12R A11R
LFT/PIPELA13L CNTENL I/O26L I/O25L I/O19L VSS VSS I/O19R I/O25R I/O26R CNTENR A13R FT/PIPER
MNC NC[2] I/O22L I/O18L NC I/O7L I/O2L I/O2R I/O7R NC I/O18R I/O22R NC[3] NC
NI/O24L I/O20L I/O8L I/O6L I/O5L I/O3L I/O0L I/O0R I/3R I/O5R I/O6R I/O8R I/O20R I/O24R
PI/O23L I/O21L NC VSS I/O4L VDD I/O1L I/O1R VDD I/O4R VSS NC I/O21R I/O23R
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
5
Selection G uide
CY7C09569V
CY7C09579V
-133
CY7C09569V
CY7C09579V
-100
CY7C09569V
CY7C09579V
-83
CY7C09569V
CY7C09579V
-67
fMAX2 (MHz) (Pipelined) 133 100 83 67
Max. Access Time (ns) (C lock to Data, Pipelined) 4.1 5 6 8
Typical Operat ing Current ICC (mA) 260 250 240 230
Typical Standb y Current for I SB1 ( m A) (Both Ports TTL Level ) 35 30 25 25
Typ ical Standby Current f or ISB3 (µA) ( Both Ports CMOS Le vel) 10 µA 10 µA10 µA 10 µA
Pin Definitions
Left Port Right Port Description
A0LA13/14L A0RA13/14R Address Inputs (A0A13 f or 16K, A0A14 for 32K devices).
ADSLADSRAddress Strobe Input. Used as an address qualifier. Thi s si gnal should be asser ted LOW to
assert the part us ing the e xternally s upplied a ddre ss on Add res s Pins. To load this addr ess into
the Burs t Ad dress Counte r both ADS and CNTEN ha ve to be LOW. ADS i s disab led if CNTRST
is asserted LOW
CELCERChip Enable Input.
CLKLCLKRClock Signal. This input can be free-running or strobed. Maxim um clock input rate is fMAX.
CNTENLCNTENRCounter Enable Input. Assert ing this signal LOW increments the b urst address counter of it s
respect ive port on eac h rising edge of CLK. CNTEN is disab led if CNTRST is asserted LOW.
CNTRSTLCNTRSTRCount er Reset In put. Asse rti ng this signal LO W rese ts the b urs t address counter of i ts res pec-
tiv e port to zero. CNTRST is not disabled by asserting ADS or CNTEN.
I/O0LI/O35L I/O0RI/O35R Data Bus Input/Output.
OELOEROu tpu t Enab le Input. This sig nal must be asserted LO W to enable t he I/O data pin s during read
operations.
R/WLR/WRRead/ Write Enable Inp ut. This signal is ass erted LOW to write t o the dual port m em ory array.
For read operations, asser t this pin HIGH.
FT/PIPELFT/PIPERFlow-Through/Pipelined Select Input. For flow-t hrough mode operation, assert thi s pin LOW.
For pipelined mode operation, assert this pi n HIGH.
B0LB3L Byte Select I nputs. Asserting these s ignals en able read a nd write op erations to the correspond-
ing bytes of the memory array.
BM, SIZE Select Pins for Bus Matching. See Bus Matching for detai ls.
BE Big Endian Pin. See Bus Matching for details .
VSS Ground Input.
VDD P ower Input.
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
6
Maximum Ratings
(Above which the us eful life may be impaired. For user guide-
li nes, not tested .)
Storage Temperature... ........ .... ........ .. ........ 65°C to +150°C
Ambient Temperature with
Power Applied.............................................55°C to +125°C
Supply Voltage to Ground Potential...............0.5V to +4.6V
DC Voltage Applied to
Outputs in High Z State ...........................0.5V to VDD+0.5V
DC Input Voltage...................................0 . 5V to VDD+0.5V[4]
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage ... .. ..... ....... ........ .. ..... ........ .. .>2001V
Latch-Up Current....... ............................. ..... ....... ..... >200 mA
Note:
4. Pulse width < 20 ns.
Operating Range
Range Ambient
Temperature VDD
Commercial 0°C to +7 0 °C 3.3V ± 165 mV
Industrial 40°C to +85°C 3.3V ± 165 mV
Shaded areas contain advance information.
Electrical Characteristics Ov er th e Ope rating Range
Parameter Description
CY7C09569V
CY7C09579V
Unit
-133 -100 -83 -67
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
VOH Output HIGH Voltage
(VDD = Mi n ., IOH = 4.0 mA) 2.4 2.4 2.4 2.4 V
VOL Output LO W Voltage
(VDD = Mi n ., IOL= +4. 0 mA) 0.4 0.4 0.4 0.4 V
VIH Input HIGH Voltage 2.0 2.0 2.0 2.0 V
VIL Input LOW Voltage 0.8 0.8 0.8 0.8 V
IOZ Ou tput Leaka ge Current 10 10 10 10 10 10 10 10 µA
ICC Operating Current (VDD
= Max ., IOUT = 0 mA)
Ou tputs Disabled
Coml. 260 410 250 385 240 360 230 340 mA
Ind. 270 385 mA
ISB1 Standby Current (Both
P orts TTL Lev el) CEL &
CER VIH, f = fMAX
Coml. 35 80 30 75 25 70 25 65 mA
Ind. 35 85 mA
ISB2 Standby Current (One
Port TTL Level) CEL |
CER VIH, f = fMAX
Coml. 180 230 170 220 160 210 150 200 mA
Ind. 170 235 mA
ISB3 Standby Current (Both
Ports CMOS Level) CEL
& CER VDD 0.2V,
f = 0
Coml. 0.01 1 0.01 1 0.01 1 0.01 1 mA
Ind. 0.01 1mA
ISB4 Standby Current (One
Port CMOS Level) CEL
| CER VIH, f = fMAX
Coml. 160 210 150 200 140 190 130 180 mA
Ind. 150 200 mA
Shaded areas contain adv ance information.
Capacitance
Parameter Description Test Conditions Max. Unit
CIN Input Capac it ance TA = 25 °C, f = 1 MHz,
VDD = 3.3V 10 pF
COUT Output Capacitance 10 pF
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
7
Notes:
5. External AC Test Load Capacitance = 10 pF.
6. (Internal I/O pad Capacitance = 10 pF) + AC Test Load.
AC Test Load and Waveforms
V
TH
=1.5V
OUTPUT
C
(a) Normal Load (Load 1)
R = 50
Z
0
= 50
[5]
3.0V
VSS 90% 90%
10%
3ns 3ns
10%
ALL INPUT PULSES
3.3V
OUTPUT
C = 5 p F
(b) Three-State Del ay (Load 2)
R2 = 4 35
R1 = 5 90
(b) Load Derati ng Curve
1
2
3
4
5
6
7
30 60 80 100 200
tcd2 for 133 MHz (ns)
Capacitance (pF)
20[6]
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
8
Switching Characteristics O ver the Operat ing Range
Parameter Description
CY7C09569V
CY7C09579V
Unit
-133 -100 -83 -67
Min. Max. Min. Max. Min. Max. Min. Max.
fMAX1 fMax Flow-Through 83 67 45 40 MHz
fMAX2 fMax Pipelined 133 100 83 67 M Hz
tCYC1 Cl ock Cycle Time - Flow-T hrough 12 15 22 25 ns
tCYC2 Cl ock Cycle Time - Pipelined 7.5 10 12 15 ns
tCH1 Clock HIGH Time - Flow-Through 4.8 6.5 7.5 8.5 ns
tCL1 Clock LOW Time - Flow-Thr ough 4.8 6.5 7.5 8.5 ns
tCH2 Clock HIGH Time - Pipelined 3 4 5 6.5 ns
tCL2 Clock LOW Time - Pipelined 3 4 5 6.5 ns
tRClock Rise Time 2333ns
tFClock Fall Time 2333ns
tSA Address Set-Up Time 3.0 3.5 4 4 ns
tHA Address Hold Time 0.5 0.5 0.5 0.5 ns
tSB Byte Select Set -Up Time 3.0 3.5 4 4 ns
tHB Byte Select Hold Time 0.5 0.5 0.5 0.5 ns
tSC Chip Enable Set-Up Time 3.0 3. 5 4 4 ns
tHC Chip Enable Hold Time 0.5 0. 5 0.5 0.5 ns
tSW R/W Set-Up Time 3.0 3.5 4 4 ns
tHW R/W Hold Time 0.5 0.5 0.5 0.5 ns
tSD Input Da ta Set-Up Time 3.0 3.5 4 4 ns
tHD Input Da ta Hol d Time 0.5 0.5 0.5 0.5 ns
tSAD ADS Set-Up Time 3.0 3.5 4 4 ns
tHAD ADS Hold Time 0.5 0.5 0.5 0.5 ns
tSCN CNTEN Set-Up Time 3.0 3.5 4 4 ns
tHCN CNTEN Hold Time 0.5 0.5 0.5 0.5 ns
tSRST CNTRST Set-Up Time 3.0 3.5 4 4 ns
tHRST CNTRST Hold Time 0.5 0.5 0.5 0.5 ns
tOE Output Enable to Data Valid 6.5 8 9 10 ns
tOLZ[7, 8] OE to Low Z 1222ns
tOHZ[7 , 8] OE to High Z 6171717ns
tCD1 Clock to Data Valid - Flow-Through 10.5 12.5 18 20 ns
tCD2 Clock to Data Valid - Pipel ined 4.1 5 6 8 ns
tCA1 Cloc k to Cou nter Address Valid - Flo w-
Through 10.5 12.5 18 20 ns
tCA2 Clock to Co unter Addr ess V al id - Pipel ined 8 9 10 11 ns
tDC Data Output Hold After Clock HIGH1222ns
tCKHZ[7, 8] Clock HIGH to Output High Z 14.5262728ns
tCKLZ[7, 8] Clock HIGH to Output Low Z 1222ns
Notes:
7. This parameter is guaranteed by design, but it is not production tested.
8. Test conditions used are Load 2.
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
9
Port to Port De lays
tCWDD Write Port Clock HIGH to Read Data Delay 24 30 35 35 ns
tCCS Clock to Clock Set-Up Time 6.5 9 10 12 ns
Switching Characteristics O ver the Operating Range (continued)
Parameter Description
CY7C09569V
CY7C09579V
Unit
-133 -100 -83 -67
Min. Max. Min. Max. Min. Max. Min. Max.
Switching Wa vef orms
Read Cycle for Flow-Through Output (FT/PIPE = VIL)[ 9, 10 , 1 1, 12]
Notes:
9. OE is asy nchronously controlled; all other inputs are synchronous to the rising clock edge.
10. ADS = VIL, CNTEN = VIL and CNTRS T = VIH.
11. The output is disabled (high-impedance state) by CE=VIH following the next rising edge of the clock.
12. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK. Numbers are for reference only.
tCH1 tCL1
tCYC1
tSC tHC
tDC
tOHZ
tOE
tSC tHC
tSW tHW
tSA tHA
tCD1 tCKHZ
tDC
tOLZ
tCKLZ
AnAn+1 An+2 An+3
QnQn+1 Qn+2
CLK
CE
R/W
ADDRESS
DATAOUT
OE
tSB tHB
B0-3
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
10
Read Cycle for Pipelined Operati on (FT/PIPE = VIH)[9, 10, 11, 12]
Bus Match Read Cycle for Flo w -Through Output (FT/PIPE = VIL)[9, 11, 13, 14, 15]
Notes:
13. Timing shown is for x18 bus matching; x9 bus matching is simi lar with 4 cycles between address inputs.
14. See table Right Port Operation for data output on first and subsequent cycles.
15. CNTEN = VIL. In x9 and x18 Bus Matching Burst Mode operations (Write or Read), ADS can toggle on the rising edge of every clock cycle or it can be at VIH
level all the time e xcept when loading the initial external address (i.e. ADS = VIL only required when reading or writing the first Byte or Word).
Swi tchi n g Wavef o rms (continued)
tCH2 tCL2
tCYC2
tSC tHC
tSW tHW
tSA tHA
AnAn+1
CLK
CE
R/W
ADDRESS
DATAOUT
OE
An+2 An+3
tSC tHC
tOHZ
tOE
tOLZ
tDC
tCD2
tCKLZ
QnQn+1 Qn+2
1 Latency
tSB tHB
B0-3
tCH1 tCL1
tCYC1
tDC
tSC tHC
tSW tHW
tSA tHA
tDC
tCKLZ
AnAnAn+1 An+1
QnQnQn+1
CLK
CE
R/W
ADDRESS
DATAOUT
OE LOW
Qn+1
1st
Cycle 1st
Cycle
2nd
Cycle 2nd
Cycle
tCD1
ADS
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
11
Bus Match Read Cycle for Pipe li ned Operation (FT/PIPE = VIH)[9, 11, 13, 14, 15]
Bank Select Pipeli ned Read[16, 17]
Notes:
16. In this depth expansion example, B1 represents Bank #1 and B2 is Bank #2; Each Bank consists of one Cypress dual-port device from this data sheet.
ADDRESS(B1) = ADDRESS(B2).
17. B0 = B1 = B2 = B3 = BM = SIZE = A DS = CNTEN = VIL, CNTRST = VIH.
Swi tchi n g Wavef o rms (continued)
tCH2
CLK
CE
R/W
ADDRESS
DATAOUT
OE
AnAnAn+1 An+1
QnQn+1
Qn
tCYC2 tCL2
tSC tHC
tSW tHW
tSA tHA
1 Latency
tCD2
tCLKZ
LOW 1st Cycle 2nd Cycle 1st Cycle
t
CD2 tCD2
tDC tDC tDC
ADS
Q3
Q1
Q0
Q2
A0A1A2A3A4A5
Q4
A0A1A2A3A4A5
tSA tHA
tSC tHC
tSA tHA
tSC tHC
tSC tHC
tSC tHC tCKHZ
tDC
tDC
tCD2
tCKLZ
tCD2 tCD2 tCKHZ
tCKLZ
tCD2 tCKHZ
tCKLZ
tCD2
tCH2 tCL2
tCYC2
CLKL
ADDRESS(B1)
CE(B1)
DATAOUT(B2)
DATAOUT(B1)
ADDRESS(B2)
CE(B2)
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
12
Left P ort Write to Fl ow-Through Right Port Read[17, 18, 19, 20, 21]
Pipelined Read-to-Write-to-Read (OE = VIL)[12, 22, 23, 24]
Notes:
18. The same waveforms apply for a right port write to flow-through left port read.
19. CE = B0 = B1 = B2 = B3 = ADS = CNTEN=VIL; CNTRST= VIH.
20. OE = VIL for the right port, which i s being read from. OE = VIH for the left port, which is being written to.
21. It tCCS maximum specified, then data from right port READ is not v alid until the maximum specified for tCWDD. If tCCS>maximum specified, then data is not valid
until tCCS + tCD1 (tCWDD does not appl y in this case).
22. Output state (HIGH, LOW, or High-Impedance) is determined by the previous cycle control signals.
23. CE = ADS = CNTEN = VIL; CNTRST = VIH.
24. During No operation, data in memory at the selected address may be corrupted and should be rewritten to ensure data integrity.
Swi tchi n g Wavef o rms (continued)
tSA tHA
tSW tHW
tSD tHD
MATCH
VALID
tCCS
tSW tHW
tDC
tCWDD
tCD1
MATCH
tSA tHA
MATCH
NO
MATCH
NO
VALID VALID
tDC
tCD1
CLKL
R/WL
ADDRESSL
DATAINL
ADDRESSR
DATAOUTR
CLKR
R/WR
tCYC2tCL2
tCH2
tHC
tSC
tHW
tSW
tHA
tSA
tHW
tSW
tCD2 tCKHZ
tSD tHD
tCKLZ tCD2
NO OPERATION WRITEREAD READ
CLK
CE
R/W
ADDRESS
DATAIN
DATAOUT
AnAn+1 An+2 An+2
Dn+2
An+3 An+4
QnQn+3
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
13
Pipelined Read-to-Write-to-Read (OE Controlled)[ 11 , 22 , 23 , 24]
Swi tchi n g Wavef o rms (continued)
tCYC2tCL2
tCH2
tHC
tSC
tHW
tSW
tHA
tSA
AnAn+1 An+2 An+3 An+4 An+5
tHW
tSW
tSD tHD
Dn+2
tCD2
tOHZ
READ READWRITE
Dn+3 tCKLZ tCD2
QnQn+4
CLK
CE
R/W
ADDRESS
DATAIN
DATAOUT
OE
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
14
Bus Match Pipelined Read-to-Write-to-Read (O E = VIL)[11, 13, 14, 15, 23, 24, 25]
Note:
25. BM, SIZE, and BE must be reconfigured 1 cycle before operation is guaranteed. BM, SIZE, and BE should remain s tatic for any particular port configuration.
Swi tchi n g Wavef o rms (continued)
CLK
CE
R/W
ADDRESS
DATAIN
DATAOUT
AnAnAn+1 An+1 An+2 An+2 An+3 An+3 An+4 An+4
QnQnQn+3 Qn+3
Dn+2 Dn+2
1s t Word 2nd Word
1st Word 2nd Word 1st W o rd 2nd Word
tCH2
tCYC2
tCL2
tSC tHC
tSW tHW
tSA tHA
READ READ READ READ READ READ
No
Operation1st C ycle 2n d Cyc le 1st C y cle 2nd Cycle
WRITE WRITE
1st C ycle 2n d Cyc le
tCD2 tCD2
tCKHZ
tCKLZ
tCD2 tDC
tSD tHD
ADS
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
15
Flow- Through Read-to-Wr it e-to-Read (OE = VIL)[10, 12, 13, 14, 23 , 24]
Flow- Through Read-to-Wr it e-to-Read (OE Controll ed)[10 , 12, 22, 23, 24]
Swi tchi n g Wavef o rms (continued)
tCH1 tCL1
tCYC1
tSW tHW
tSA tHA
tSW tHW
tSD tHD
AnAn+1 An+2 An+2 An+3 An+4
Dn+2
QnQn+1 Qn+3
tCD1 tCD1
tDC tCKHZ
tCD1 tCD1
tCKLZ tDC
READ NO
OPERATION WRITE READ
CLK
CE
ADDRESS
R/W
DATAIN
DATAOUT
Qn
tCH1 tCL1
tCYC1
tSW tHW
tSA tHA
tCD1 tDC
tOHZ
READ
AnAn+1 An+2 An+3 An+4 An+5
Dn+2 Dn+3
tSW tHW
tSD tHD
tCD1 tCD1
tCKLZ tDC
Qn+4
tOE
WRITE READ
CLK
CE
ADDRESS
R/W
DATAIN
DATAOUT
OE
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
16
Bus Match Flow-Through Read -t o-Write-to-Read (OE = VIL)[11, 13, 14, 15, 23, 24, 25]
Swi tchi n g Wavef o rms (continued)
CLK
CE
R/W
ADDRESS AnAnAn+1 An+1 An+1 An+1 An+1 An+2
DATAOUT
DATAIN
QnQnQn+1 Qn+1
Dn+1 Dn+1
tCH1 tCL1
tCYC1
tHC
tSC
tHW
tSW
tHA
tSA
tHW
tSW
1st W o rd 2nd Word
tHD
tSD
1s t Word 2nd Word
1st Cycle 2nd Cycle 1st Cycle 2nd Cycle 1st Cycle 2nd Cycle
READ READ WRITE WRITE READ READNo
Operation
tCD1
tCD1 tDC tCKHZ tCD1 tCD1
tCKLZ tDC
ADS
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
17
Pipelined Read with Addr ess Counter Advance[26]
Flow -Through Read with Address Counter Advance[26]
Note:
26. CE = OE = VIL; R/W = CNTRST = VIH.
Swi tchi n g Wavef o rms (continued)
COUNTER HOLD
READ WITH COUNTER
tSA tHA
tSAD tHAD
tSCN tHCN
tCH2 tCL2
tCYC2
tSAD tHAD
tSCN tHCN
Qx1QxQnQn+1 Qn+1 Qn+2
tDC
tCD2
READ WITH COUNTER
READ
EXTERNAL
ADDRESS
CLK
ADDRESS
ADS
DATAOUT
CNTEN
An
tCH1 tCL1
tCYC1
tSA tHA
tSAD tHAD
tSCN tHCN
QxQnQn+1 Qn+2 Qn+2
An
tSAD tHAD
tSCN tHCN
tDC
tCD1
COUNTER HOLD
READ WITH COUNTER
READ
EXTERNAL
ADDRESS
READ
WITH
COUNTER
CLK
ADDRESS
ADS
DATAOUT
CNTEN
Qn+3
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
18
Write with Addr ess Counter Advance (Flow-Thr ough or Pip eli ned O utputs)[27, 28]
Notes:
27. CE= B0 = B1 = B2 = B3 = R/W = VIL; CNTRST = VIH.
28. The Internal Address is equal to the External Address when ADS = CNTEN = VILand CNTRST=VIH.
Swi tchi n g Wavef o rms (continued)
tCH2 tCL2
tCYC2
AnAn+1 An+2 An+3 An+4
Dn+1 Dn+1 Dn+2 Dn+3 Dn+4
An
Dn
tSAD tHAD
tSCN tHCN
tSD tHD
WRITE EXTERNAL WRITE WITH COUNTER
ADDRESS WRITE W ITH
COUNTER WRITE COUNTER
HOLD
CLK
ADDRESS
INTERNAL
CNTEN
ADS
DATAIN
ADDRESS
tSA tHA
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
19
Counter Reset (Pip e lined Outputs )[11 , 22 , 29 , 30 , 31 ]
Notes:
29. CE = B0 = B1 = B2 = B3 = VIL.
30. No dead cycle exists during counter reset. A READ or W RITE cycle may be coincidental with the counter reset.
31. Output state (HIGH, LOW, or High-Impedance) is determined by the previous cycle control signals. Ideally, DATAOUT should be in the High-Impedance state
during a valid WRITE cycle.
Swi tchi n g Wavef o rms (continued)
CLK
ADDRESS
INTERNAL
CNTEN
ADS
DATAIN
ADDRESS
CNTRST
R/W
DATAOUT
AnAmAp
Ax01AnAmAp
Q1Qn
Q0
D0
tCH2 tCL2
tCYC2
tSA tHA
tSW tHW
tSRST tHRST
tSD tHD
tCD2 tCD2
tCKLZ
[31]
RESET ADDRESS 0
COUNTER WRITE READ
ADDRESS 0 ADDRESS 1
READ READ
ADDRESS AnADDRESS Am
READ
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
20
Counter Reset (Flo w-Through Outputs)[22, 24, 29, 30, 31]
Swi tchi n g Wavef o rms (continued)
tCH2 tCL2
tCYC2
CLK
ADDRESS
INTERNAL
CNTEN
ADS
DATAIN
ADDRESS
CNTRST
R/W
DATAOUT Q0Q1
D0
AX01AnAn+1
tSRST tHRST
tSD tHD
tSW tHW
AnAn+1
tSA tHA
COUNTER
RESET WRITE
ADDRESS 0 READ
ADDRESS 0 READ
ADDRESS 1 READ
ADDRESS n
Qn
tCD1
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
21
Pipelined Read of State of Address Counter [32, 33, 34]
Flow- Through Read of State of Add ress Counter [32, 33, 35]
Notes:
32. CE = OE = VIL; R/W = CNTRST = VIH.
33. When reading ADDRESSOUT in x9 Bus Match mode, readout of AN is extended by 1 cy cle.
34. For Pipelined address counter read, signals from address counter operation table from must be valid for 2 consecutive cycl es for x36 and x18 mode and for 3
consecutive cycles for x9 mode.
35. For flow-through address counter read, signals from address counter operation table must be valid for consecutive cycles for x36.
Swi tchi n g Wavef o rms (continued)
CNTEN
CLK
tCH2 tCL2
tCYC2
ADDRESS
ADS
An
Qx-2 Qx-1 Qn
A
n
Q
n+1
Q
n+2
tSA tHA
tSAD tHAD
tSCN tHCN
tSCN tHCN tSCN tHCN
tSAD tHAD
LOAD
ADDRESS
EXTERNAL COUNTER
HOLD
READ WITH COUNTER
tCA2
INTERNAL
ADDRESS An+1 An+2
An
READ WITH
COUNTER
tDC
READ COUNTER A DDRESS
DATAOUT
CNTEN
CLK
tCH1 tCL1
ADDRESS
ADS
An
QxQnAn
Q
n+1
Q
n+2
tSA tHA
tSAD tHAD
tSCN tHCN tSCN tHCN
tSCN tHCN
tSAD tHAD
LOAD
EXTERNAL
tCYC1
ADDRESS COUNTER
HOLD
READ WITH COUNTER
Q
n+3
tDC
tCA1
INTERNAL
ADDRESS AnAn+1 An+2 An+3
DATAOUT
READ COUNTER ADDRESS
READ WITH
COUNTER
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
22
Rea d /Write an d En able Op er ation[36, 37 , 38 ]
Inputs Outputs
OE CLK CE R/W I/O0I/O35 Operation
X H X High-Z Deselected[39]
X L L DIN Write
L L H DOUT Read[39]
H X L X High-Z Outputs Disabled
Address Counter Cont rol Operation[36, 40]
Address Previous
Address CLK OE R/W ADS CNTEN CNTRST Mode Operation
X X X X X X L Reset Counter Rese t
AnX X X L L H Load Address Load into Cou nter
AnAnL H L H H Hold +
Read External Addr ess Blocked -
Counter Addr ess Read out
X AnX X H H H Hold External Address Blocked -
Counter Disabled
X AnX X H L H Incre-
ment Counter Increment
Notes:
36. X = Dont Care, H = VIH, L = VIL.
37. ADS, CNTEN, CNTRST = Dont Care.
38. OE is an asynchronous input signal.
39. W hen CE changes state In the pipelined mode, deselection and read happen in the following clock cycle.
40. Counter operation is independent of CE.
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
23
Right Port Configurat ion[25, 41]
Right Port Operation[42]
Readout of Internal Address Counter[43]
BM SIZE Confi guration I/O Pins used
00 x36 I/O
0R35R
10 x18 I/O
0R17R
11 x9 I/O
0R8R
Configuration BE Data on 1st Cycle Data on 2nd Cycle Data on 3rd Cyc le Data on 4th Cycle
x18 0 DQ0R17R DQ18R35R --
x18 1 DQ18R35R DQ0R17R --
x9 0 DQ0R8R DQ9R17R DQ18R26R DQ27R35R
x9 1 DQ27R35R DQ18R26R DQ9R17R DQ0R8R
Configur ation Address on 1st Cycle I /O Pins used on 1st Cycle Address on 2nd
Cycle I/O Pins used on 2nd
Cycle
Left Port x36 A0L14L I/O3L17L --
Right Port x36 A0R14R I/O3R17R --
Right Port x18 W A, A0R14R I/O2R17R --
Right Por t x9 A6R14R I/O0R8R BA, WA, A0R5R I/O1R8R
Left Port Operation
Control Pin Effe ct
B0 I/O08 Byte Control
B1 I/O917 Byte Control
B2 I/O1826 Byte Control
B3 I/O2735 Byte Control
Notes:
41. In x36 mode, BE input is a Dont Care.
42. DQ represents data output of the chip.
43. x18 and x9 configuration apply to right port only.
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
24
Counter Operation
The CY7C09569V/09579V Dual-Port RAM (DPRAM) con-
tai ns on-chi p add ress coun ters ( one f or ea ch port) f or the syn-
chronous members of the product family. Besides the main
x36 f ormat, the right port al lows b us matching ( x18 or x9, use r-
selectable). An internal sub-counter provides the extra ad-
dresses required to sequence out the 36-bit word in 18-bit or
9-bit increments. The sub-counter counts up in the Lit tle E n -
dian mode, and counts down if the user has chosen the Big
Endian mode. The address counter is required to be in incr e-
ment mode in order for the sub-counter to sequence out the
second wor d (in x 18 mode) or t he remain ing thr ee b ytes (in x 9
mode).
For a x36 format (the only act ive format on the left port), each
addres s count er in the CY 7C09579V uses addr ess es (A014).
For the right port (allowing for the bus-matching feature), a
maximum of t wo address bits (out of a 2-bit sub-counter) are
added.
1. ADSL/R (pin #23/86 ) is a p ort's address strobe , allowi ng the
loading of that port's burst counters if the corresponding
CNTENL/R pin is active as well.
2. CNTENL/R (pin #25/84) is a port's count enable, pr ovided
to stall the ope ration of the address input and utilize t he
internal add ress generated by the internal counter for f ast
interleaved memory applications; wh en asserted, the ad-
dress c ounter will increment on each positi ve transit ion of
that port's clock signal.
3. CNTRSTL/R (pin #24/85) i s a port's burst counter reset .
A new r ead- back ( Hold +Read Mode) feature ha s been ad ded,
which is di ff er ent bet ween t he lef t and right po rt due to t he b us
matching feature p rovided only for the right port. In read-back
mode the internal address of the counter wil l be read from the
data I/Os as shown in Figure 1.
Bus Match Operation
The rig ht port of the CY7C09569V/0957 9V 16K/32Kx36 dual-
port SRAM can be configured in a 36-bit long-word, 18-bit
word, or 9-bi t b yte f o rmat f or d ata I/ O . The d ata lines are divid -
ed into four lanes, each consisting of 9 bits (byte-size data
lines).
The Bus Match Select (BM) pin works with Bus Size Select
(SIZE) and Big Endian Select (BE) to select the bus width
(long-word, word, or byte) and data sequencing arrangement
for the righ t port of the dual -port devi ce. A logic 0 applied to
both the Bus Match Sel ect (BM) pin an d to t he Bus Siz e Select
(S IZE ) pin w ill s elec t l ong- word ( 36- bit) opera tio n. A lo gic 1
level applied to the Bus Match Select (BM) pin will enable
whether b yte or word bu s width opera tion on the right port I/Os
depending on the logic l evel applied to the SIZE pi n. The level
of Bus Match Select (BM) must be static throughout normal
device operation.
The Bus Size Select (SIZE) pin selects either a byte or word
data arrangement on the right port when the Bus Match Sel ect
(BM) pin is HI GH. A logi c 1 on t he SIZE pin whe n the BM pin
is HIGH selects a byte bus (9-bit ) data arrangement). A logic
0 on the SIZE pin when the BM pin is HIGH selects a word
bus (18-bit) data ar rangement. The le vel of the Bus Siz e Select
(SIZE) must also be static throughout normal device operation.
The Big Endian Select (BE) pin is a multiple-function pin during
word or byte bus selection (BM = 1). BE is used in Big Endian
Select mode to determine t he order b y which bytes (or words)
of data are transferred through the r ight data port. A logic 0
on the BE pin will select Little Endian data sequencing ar-
rangement and a log ic 1 on the BE pin will sel ect a Big Endi-
an data sequencing arrangement. Under these circumstanc-
es, the level on the BE pin should be static throughout dual-
por t operation.
Long-Word (36-bi t) Operation
Bus Match Select (BM) and Bus Size Select (SIZE) set to a
logic 0 will enable standard cycle long-word (36-bit) opera-
tion. In this mode, th e right ports I/O oper a tes e ssenti ally in an
identical fashion to the left port of the dual-port SRAM. How-
ever no Byte Select cont rol is availab le. All 36 bits of t he long-
word are shift ed into and out of the right ports I/O buffer stag-
es. Al l read and write timing parameters may be ident ical wit h
respect to t he two data ports. When the ri ght p ort is con fi gured
fo r a long-w ord siz e , Big- Endian Sel ect (BE) pin has no appl i-
catio n and their inputs are dont care[44] f or th e ex ternal user .
CY7C09569V
CY7C09579V
RAM
ARRAY
____________
______________
_______
Address Read-Back
Figur e 1 . Count er Opera tion Dia gram
9
/
BE
CY7C09569V
CY7C09579V
16K/32Kx36
Dual Port
BM SIZE
9
/
9
/
9
/x9, x18, x36
/
US MODE
x
36
/
Figure 2. Bus Mat ch Operati on Diagram
Note:
44. Even though a logic level applied to a Dont Care input will not change the logical operation of the dual-port, inputs that are tempor arily a Dont Care (along
with unused inputs) mus t not be allowed to float. They must be forced either HIGH or LOW.
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
25
Word (18-bit) Operation
W ord ( 18-bit ) b us s izing operat ion i s enabl ed whe n Bus Ma tch
Select (BM) is set to a logic 1 a nd the Bus Si ze Select (SIZE)
pin i s set to a logic 0. I n this mode , 18 bits of da ta are ported
through I/O0R17R. The level applied to the Big Endian (BE) pin
determin es the ri ght po rt d ata I/O seq uencing ord er (Bi g Endi-
an or Little Endian).
During wor d ( 18- bit) bus size operation, a l ogic LOW applied
to the BE pin will select Little Endian operation. In this case,
the least significant data word is read from the r ight por t first
or writt en to the right port f irst. A l ogic 1 on t he BE pin durin g
word (18-bit) bus size operation will select Big Endian opera-
tion resulting in the most significant data word being trans-
ferred through the right port first. Internally, the data will be
stor ed in th e appropri ate 36- bit LSB or MSB I/ O memory loca-
ti on. Devi ce operat i on r equir es a minimum of tw o cl ock cyc les
to read or write during word (18-bit) bus size operation. An
internal sub-counter automatically increments the right port
multiplexer control when Little or Big Endian operation is in
effect.
Byte (9-bit) Operation
Byte (9-bit) bus sizing operation is enabled when Bus Match
Select (BM) is set to a logic 1 a nd the Bus Si ze Select (SIZE)
pin is set to a l ogic 1. In this mode, 9 bits of dat a are ported
through I/O0R8R.
Big Endian and Little Endian data sequencing is available for
dual-port operation. The level applied to the Big Endian pin
(BE) under these circumstances will deter mine the r ight port
data I/ O sequencing order (Big or Little Endian). A logic LOW
appli ed to the BE pin during b yte (9- bit) bus si ze op er ation will
select Little Endi an operati on. I n thi s case , the least significant
data byte is read from the r ight port first or written to the right
po rt first. A lo gi c 1 on the BE pin during by te (9-bit) bus size
operat ion wi ll select Big Endian oper ation res ulting in the most
significant data word to be transferred through the right port
fir st. Internally, the data will be stored in the appropriate 36-bit
LSB or MSB I/O memory location. Device operati on requires
a minimum of f our clock cycles to read or write du ring byte (9-
bit) bus size operati on. An internal sub-counter automatically
increments the right port multiplexer control when Little or Bi g
Endian op eration is in eff ect. When t ransf erring dat a in byt e (9 -
bit) bus match format, the unused I/O pins (I/O9RQ35R) are
three-stated.
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
26
Orde ring Information
Shaded areas contain adv ance information.
Document #: 38-00743-B
16K x36 3.3V Synchronous Dual-Port SRAM
Speed
(MHz) Orderi ng Code Package
Name Package Type Operating
Range
133 CY7C09569V-133AC A144 144-Pin Thin Quad Flat Pack Commercial
CY7C09569V-133BAC BB172 17 2-B a ll B a ll G r id Ar ray (BGA ) Com me rcia l
100 CY7C09569V-100AC A144 144-Pin Thin Quad Flat Pack Commercial
CY7C09569V-100BAC BB172 17 2-B a ll B a ll G r id Ar ray (BGA ) Com me rcia l
83 CY7C09569V-83AC A144 144-Pin Thin Quad Flat Pack Commercial
CY7C09569V-83AI A144 144-Pin Thin Quad Flat Pack Industrial
CY7C09569V-83BAC BB172 17 2-B a ll B a ll G r id Ar ray (BGA ) Commercial
CY7C09569V-83BAI BB172 1 7 2- B a ll B a ll Gr id Ar ray (BG A ) Industrial
67 CY7C09569V-67AC A144 144-Pin Thin Quad Flat Pack Commercial
CY7C09569V-67BAC BB172 17 2-B a ll B a ll G r id Ar ray (BGA ) Commercial
32K x36 3.3V Synchronous Dual-Port SRAM
Speed
(MHz) Orderi ng Code Package
Name Package Type Operating
Range
133 CY7C09569V-133AC A144 144-Pin Thin Quad Flat Pack Commercial
CY7C09569V-133BAC BB172 17 2-B a ll B a ll G r id Ar ray (BGA ) Com me rcia l
100 CY7C09579V-100AC A144 144-Pin Thin Quad Flat Pack Commercial
CY7C09579V-100BAC BB172 17 2-B a ll B a ll G r id Ar ray (BGA ) Com me rcia l
83 CY7C09579V-83AC A144 144-Pin Thin Quad Flat Pack Commercial
CY7C09579V-83AI A144 144-Pin Thin Quad Flat Pack Industrial
CY7C09579V-83BAC BB172 17 2-B a ll B a ll G r id Ar ray (BGA ) Commercial
CY7C09579V-83BAI BB172 1 7 2- B a ll B a ll Gr id Ar ray (BG A ) Industrial
67 CY7C09579V-67AC A144 144-Pin Thin Quad Flat Pack Commercial
CY7C09579V-67BAC BB172 17 2-B a ll B a ll G r id Ar ray (BGA ) Commercial
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V: 10/97
Revision: May 1, 2000
27
Package D i ag r ams
144-Pin Plastic Thin Quad Flat Pack (TQFP) A144
51-85047-A
CY7C09569V
CY7C09579V
PRELIMINARY
7C09579V:
Revision: May 1, 2000
© Cypress Semiconductor Corporation, 2000. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuit ry other than circu itry embodied i n a Cypress Sem ic onductor product. Nor does it conv ey or imply any license under patent or oth er rights . Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
Package D i ag r ams (continued)
172-Bal l BGA BB172
51-85114