10/9/98
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Absolute Maximum Ratings
Parameter IRFE310, JANTX-, JANTXV-, 2N6786U Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 1.25
ID @ VGS = 10V, T C = 100°C Continuous Drain Current 0.80
IDM Pulsed Drain Current 5.5
PD @ TC = 25°C Max. Power Dissipation 15 W
Linear Derating Factor 0.12 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 34 mJ
dv/dt Peak Diode Recovery dv/dt 2.8 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Surface Temperature 300 ( for 5 seconds)
Weight 0.42 (typical) g
N - CHANNEL
PD - 91782
400Volt, 3.6ΩΩ
ΩΩ
Ω, HEXFET
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the thermal
and electrical performance. The lid of the package
is grounded to the source to reduce RF interference.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits,
and virtually any application where high reliability
is required.
oC
A
IRFE310
REPETITIVE A V ALANCHE AND dv/dt RA TED JANTX2N6786U
HEXFET
®
TRANSISTOR JANTXV2N6786U
[REF:MIL-PRF-19500/556]
Product Summary
Part Number BVDSS RDS(on) ID
IRFE310 400V 3.6Ω1.25A
Features:
nHermetically Sealed
nSimple Drive Requirements
nEase of Paralleling
nSmall footprint
nSurface Mount
nLightweight
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units T est Conditions
BVDSS Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.37 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 3.6 VGS = 10V, ID = 0.8A
Resistance — — 3.7 VGS = 10V, ID = 1.25A
VGS(th) Gate Threshold Voltage 2.0 — 4 .0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 0.87 — — S ( )V
DS > 15V, IDS = 0.8A
IDSS Zero Gate Voltage Drain Current — — 25 VDS= 0.8 x Max Rating,VGS=0V
— — 250 VDS = 0.8 x Max Rating
VGS = 0V, T J = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 8.4 VGS = 10V, ID = 1.25A
Qgs Gate-to-Source Charge — — 1.6 nC VDS = Max Rating x 0.5
Qgd Gate-to-Drain (‘Miller’) Charge — — 5.0
td(on) Turn-On Delay Time — — 15 VDD = 15V, ID = 1.25A,
trRise Time — — 20 RG = 7.5Ω
td(off) Turn-Off Delay Time — — 35
tfFall Time — — 30
LDInternal Drain Inductance — 5.0 —
LSInternal Source Inductance — 15 —
Ciss Input Capacitance — 190 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 65 — p F f = 1.0MHz
Crss Reverse Transfer Capacitance — 24 —
nA
Ω
nH
ns
µA
Thermal Resistance
Parameter Min Typ Max Units T est Conditions
RthJC Junction-to-Case — — 8.3
RthJ-PCB Junction-to-PC board — — 27 soldered to a copper-clad PC board
°C/W
Measured from drain
lead, 6mm (0.25 in)
from package to center
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
Modified MOSFET sym-
bol showing the internal
inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
ISContinuous Source Current (Body Diode) — — 1.25
ISM Pulse Source Current (Body Diode) — — 5.5
VSD Diode Forward Voltage — — 1.4 V Tj = 25°C, IS = 1.25A, VGS = 0V
trr Reverse Recovery Time — — 540 ns Tj = 25°C, IF = 1.25A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 4.5 µCV
DD ≤ 50V
ton Forward Turn-On Time Intrinsic tur n-on time is negligible. Tur n-on speed is substantially controlled by LS + LD.
AModified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.01
0.1
1
10
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
4.0 5.0 6.0 7.0 8.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
1.2A
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0246810 12
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
1.25 A
V = 80V
DS
V = 200V
DS
V = 320V
DS
0.1
1
10
0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1 10 100
0
100
200
300
400
500
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
0.01
0.1
1
10
100
10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
15
30
45
60
75
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
0.56A
0.79A
1.25A
10V
10V
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
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Case Outline and Dimensions — Leadless Chip Carrier (LCC) Package
IR Case Style Leadless Chip Carrier (LCC)
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
ISD ≤ 1.25A, di/dt ≤ 180 A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 50Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
@ VDD = 50 V, Star ting TJ = 25°C,
EAS = [0.5 * L * (IL2) ]
Peak IL =1.25A, VGS =10 V, 25 ≤ RG ≤ 200Ω
Notes:
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http://www.irf.com/ Data and specifications subject to change without notice. 10/98
