GaA@As IRED & PHOTO-IC TLP 7 5] (TLP751) DIGITAL LOGIC GROUND ISOLATION Unit in mm LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING POWER SUPPLY FEEDBACK CONTROL ANALOG SIGNAL ISOLATION 7.624025 Cy +01 4. 0.25-0.05 7.85~8.80 | The TOSHIBA TLP751 Consists of GaAfAs high-output light emitting diode and a high speed detector of one chip photo diode- transistor. This unit is 8-lead DIP package. TLP751 has internal base connection. This base pin should be used for analog application or enable operation. If base pin is open, output signal will be noisy by environmental condition. For this case, TLP650 is suitable. e Switching Speed : tpHL=0.3zs (Typ.) tpLH = 0.5us (Typ.) (RL =1.9k2) JEDEC _ TTL Compatible EIAJ _ UL Recognized : UL1577, File No. 67349 TOSHIBA 11-10C1 e@ BSI Approved : BS415 : 1990, Weight : 0.54g BS7002 : 1989 (EN60950). : PIN CONFIGURATION (TOP VIEW) Certificate No.6746 Isolation Voltage : 5000Vrms (Min.) @ Option (D4) type 1 7 As 2 ANODE VDE Approved : DIN VDE0884 / 08.87, 20-4 4 7 ae OPE Certificate No.68384 Lg 5: EMITTER . . . ; 3Q 8 6: COLLECTOR Maximum Operating Insulation Voltage : 630VpK 7- BASE Highest Permissible Over Voltage : 6000VPK aC H5 8: Voc (Note) When a VDE0884 approved type is needed, SCHEMATIC please designate the Option (D4) 1 over @ Creepage Distance : 6.4mm (Min) Ip ~ t I 8 Clearance : 6.4mm (Min) 2 Z } Bove Insulation Thickness : 6.4mm (Min) VF 7? I 7 561 TLP751 (TLP751) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING | UNIT Forward Current (Note 1) Ip 25 mA a Pulse Forward Current (Note 2) Ipp 50 mA a Peak Transient Forward Current (Note 3) Ipprt 1 A Reverse Voltage VR 5 Vv Diode Power Dissipation (Note 4) Pp 45 mW Output Current Ip 8 mA 5 Peak Output Current Iop 16 mA & | Output Voltage Vo 0.5~15 Vv oO fq | Supply Voltage Vcc 0.5~15 Vv a Base Current Ip 5 mA A | Emitter-Base Reverse Voltage VEB 5 Vv Output Power Dissipation (Note 5) Po 100 mW Operating Temperature Range Topr 55~100 C Storage Temperature Range Tstg 55~125 C Lead Solder Temperature (10sec.) (Note 6) Tsol 260 C Isolation Voltage (AC, 1 min., RLH=60 %) (Note 7) BVs 5000 Vrms Note 1 : Derate 0.8mA above 70C Note 2 : 50% duty cycle, lms pulse width. Derate 1.6mA/C above 70C Note 3. : Pulse width= 1s, 300pps. Note 4 : Derate 0.9mW/C above 70C Note 5 : Derate 2mW/C above 70C Note 6 : Soldering portion of lead : up to 2mm from the body of the device. Note 7 : Device considered a two terminal device : Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. 562 {TLP751) ELECTRICAL CHARACTERISTICS (Ta = 25C) TLP751 CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAX.| UNIT Forward Voltage VE Ip=16mA _ 1.65 | 1.85 Vv Forward Voltage _ a Temperature Coefficient 4Vp/aTa \Ip=16mA ~~ 72} = jvc 4 [Reverse Current IR VR=5V _ _ 10} 4A Capacitance Between _ _ Terminal Cr Vp=0, f=1MHz _ 45) pF fc Ion (1) [Ir=0mA, Vec=Vo=5.5V _ 3 | 500] nA High Level Output Ton (2) |Ir=0mA, Voc =Vo=15V _ _ 5 Current = o Ip=O0mA, Voc =Vo=15V HA _ _ 50 8 OH | ra=70C fl |High Level Supply _ _ a Voltage IccH = |Ip=0mA, Vcoc=15V _ 0.01 1] ywA n Current Transfer Ratio Ig/Ip Volo4v Voo=4.5V 4 | % fq |Low Level Output Ip=16mA, Voc =4.5V . Voltage VOL Ig=1.1mA _ _ 0.4 Vv Ss = 2 Resistance (Input-Output) | Rg ep Vs=500Vpc 5x10!) 19] 2 Oo Capacitance (Input-Output) Cg Vg=0, f=1MHz (Note 7) 0.8 | pF SWITCHING CHARACTERISTICS (Ta = 25C, VCC = 5V) CHARACTERISTIC SYMBOL Pe er TEST CONDITION | MIN. | TYP. |MAX.) UNIT Propagation Delay Time Ip=0-16mA, = 0.2| (HL) PHL Voc=5V, RL=4.1k0 us 7 : 1 Propagation Delay Time Ip=16-0mA _ 1.0) (LH) PLH Voc=5V, Rp=4.1k0 HS Common Mode Transient Ip=O0mA, Immunity at Logic High CMy Vom =200Vp-p 400} | Vius Output (Note 8) RL =4.1k0 Common Mode Transient 2 Ip=16mA, Immunity at Logic Low CML VcM=200Vp-p |-1000 |} | V/us Output (Note 8) RL =4.1kN 563 TLP751 {TLP?51) Note 8: CMy, is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (VQ <0.8V). CMy is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state(VQ>2.0V). Note 9 : Maximum electrostatic discharge voltage for any pins: 100V(C=200pF, R=0). TEST CIRCUIT 1: Switching Time Test Circuit PULSE INPUT Ip Voo=5V eo | Gy [s+ 0 fo Le 7 PW = 100s SL 5 R DUTY RATIO=1/10 1 7} Ry y wy * [6}+~ Vo o Ip MONITOR 1 4 5 OUTPUT / io MONITOR 1.5V ] Lov toHL, toLH TEST CIRCUIT 2: Common Mode Noise Immunity Test Circuit _ 200V o sp Oe OY A X 90% I a Vom / \ Fo ay 7] Ry q po ov o_ +3 fs} +2 Vo r f OUTPUT i MONITOR vo ] 5V (Ip=OmA) M. 2V \ 0.8V PULSE GENERATOR Yo VoL Z9 =500 (Ip=16mA) _ 160(V) _ 160(V) CMH ty (us) CML tp (us)TLP571 (TLP751) AVEF/ATa Ip 100 -2.6 Ta=25C sol z Z BY -24 = > 10 e% & 5 = W22 ke 3 B& Z as by be % 1 S > -2.0 D> 05 g* 2 03 ou Q > 2 18 4 oa 03 Zo = 0.05 Z& -16 = 9.03 8 0.01 -14 1.0 12 L4 1.6 18 2.0 0.1 0305 1 3.5 10 30 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip ima) lon (1) Ta Io - Ir HIGH LEVEL OUTPUT CURRENT ToH (na) (%) CURRENT TRANSFER RATIO Io /Ip Ta=25C Y (mA) w 2 E 1 fa oe 5 06 oO FE 03 5 a & & 0.1 0.05 0 40 80 120 160 0305 1 3.5 10 30 50 100 AMBIENT TEMPERATURE Ta (C) FORWARD CURRENT Ip (mA) Io/Ip - Ip Io/Ip Ta 40 a6 ay 32 3 a fa iS oa 3 NORMALIZED re : % TO: Zz Ip=16mA Voc=4.5 Vo=04V Ta=25C 1 0 0.2 05 1 38 10 30 50 -60 -40 -20 0 20 40 60 80 100 FORWARD CURRENT Ip (mA) AMBIENT TEMPERATURE Ta (C) 565 TLP751 (TLP751) (mA) 19 OUTPUT CURRENT PROPAGATION DELAY TIME tpHL, tpLH (#s) fo - Vo 30 -- 25- 20 15 10 Ip=5mA 1 2 3 4 5 OUTPUT VOLTAGE Vo tpHL, tpLH - Ru Ip=16mA Voc=5 Ta = 26C ~lyLH 3 5 10 LOAD RESISTANCE RL, (Vv) 30 (kQ) 50 100 566 Vv) OUTPUT VOLTAGE Vo Vo - Ir Ru RL =2k0 a Yo Ta =25C 3.9 FORWARD CURRENT Ip (mA)