
4
Typical Parameters, Single Diode
1
10
100
1
10
FORWARD CURRENT
(µA)
FORWARD VOLTAGE DIFFERENCE
(mV)
VOLTAGE OUT (mV)
POWER IN (dBm)
0.05 0.15 0.200.10 0.25
FORWARD VOLTAGE (V)
Figure 3. Typical Forward Voltage
Match, HSMS-2860 Pairs.
.01
.1
1
10
100
0.1 0.2 0.3 0.4 0.70.6 0.8 0.90.5 1.0
FORWARD CURRENT (mA)
FORWARD VOLTAGE (V)
Figure 2. Typical Forward Current vs.
Forward Voltage at Temperature,
HSMS-2860 Series.
Figure 1. Typical Forward Current vs.
Forward Voltage, HSMS-2850 Series.
1
10
100
1000
10,000
–40 –30 –10 0–20 10
Figure 6. Dynamic Transfer
Characteristic as a Function of DC Bias,
HSMS-2860.
Figure 4. +25°C Output Voltage vs.
Input Power, HSMS-2850 at Zero Bias,
HSMS-2860 at 3 µA Bias.
Figure 5. +25°C Expanded Output
Voltage vs. Input Power. See Figure 4.
5
35
30
40
10
15
20
25
.1 1 10 100
OUTPUT VOLTAGE (mV)
BIAS CURRENT (µA)
Figure 7. Voltage Sensitivity as a
Function of DC Bias Current,
HSMS-2860.
Figure 8. Output Voltage vs.
Temperature, HSMS-2850 Series.
T
A
= +85°C
T
A
= +25°C
T
A
= –55°C
I
F
(left scale)
∆V
F
(right scale)
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
R
L
= 100 KΩ
20 µA
5 µA
10 µA
Input Power =
–30 dBm @ 2.45 GHz
Data taken in fixed-tuned
FR4 circuit
R
L
= 100 KΩ
I
F
– FORWARD CURRENT (mA)
0
0.01
V
F
– FORWARD VOLTAGE (V)
0.8 1.0
100
1
0.1
0.2 1.8
10
1.4
0.4 0.6 1.2 1.6
VOLTAGE OUT (mV)
-50
0.1
POWER IN (dBm)
-30 -20
10000
10
1
-40 0
100
-10
1000
R
L
= 100 KΩ
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
915 MHz
2.45 GHz
VOLTAGE OUT (mV)
-50
0.3
POWER IN (dBm)
-30
10
1
-40
30 R
L
= 100 KΩ
2.45 GHz
915 MHz
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
OUTPUT VOLTAGE (mV)
0
0.9
TEMPERATURE (°C)
40 50
3.1
2.1
1.5
10 100
2.5
80
20 30 70 9060
1.1
1.3
1.7
1.9
2.3
2.7
2.9
MEASUREMENTS MADE USING A
FR4 MICROSTRIP CIRCUIT.
FREQUENCY = 2.45 GHz
P
IN
= -40 dBm
R
L
= 100 KΩ
Applications Information
See the HSMS-285A data sheet.