GaAAs IRED & PHOTO-IC (TLP759) DIGITAL LOGIC GROUND ISOLATION LINE RECEIVER. MICROPROCESSOR SYSTEM INTERFACES. SWITCHING POWER SUPPLY FEEDBACK CONTROL. TRANSISTOR INVERTOR. The TOSHIBA TLP759 consists of a GaAfAs high-output light emitting diode and a high speed detector of one chip photo diode-transistor. This unit is 8-lead DIP package. TLP759 has no internal base connection, and a Faraday shield integrated on the photodetector chip provides an effective common mode noise transient immunity. So this is suitable for application in noisy environmental condition. Isolation Voltage : 5000 Vrms Min. e Switching Speed : tpHL = 9.3ys (Typ.) tpLH = 0.5us (Typ.) (RL =1.9k) TTL Compatible TLP759 Unit in mm on 64 2.544025 = 4 3.65 5MIN > JEDEC EIAJ TOSHIBA 11-10C1 Weight : 0.54g PIN CONFIGURATION (TOP VIEW) 1d 2 3 4Q 8 CAAA hn S 567 [N.C : ANODE : CATHODE INC : EMITTER (GND) : COLLECTOR (OUTPUT) INC VecoTLP759 (TLP759) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current (Note 1) IF 25 mA 2 Pulse Forward Current (Note 2) Ipp 50 mA ae Peak Transient Forward Current (Note 3) Ippr 1 A Reverse Voltage VR 5 Vv Diode Power Dissipation (Note 4) Pp 45 mW mw | Output Current Io 8 mA ES Peak Output Current lop 16 mA 2 Output Voltage Vo 0.5~20 Vv @ Supply Voltage Vcc 0.5~30 Vv Output Power Dissipation (Note 5) Po 100 mW Operating Temperature Range Topr ~55~100 C Storage Temperature Range Topr 55~125 C Lead Solder Temperature (10 sec.) (Note 6) Tsold 260 C Isolation Voltage (AC, 1 min., R.H.= 60%) (Note 7) BVs 5000 Vrms Note 1 : Derate 0.8mA/C above 70C. Note 2 :50% duty cycle, Ims pulse width. Derate 1.6mA/C above 70C. Note 3 : Pulse width S lus, 300pps. Note 4 : Derate 0.9mW/C above 70C. Note 5 : Derate 2mW/C above 70C. Note 6 : Soldering portion of lead: up to 2mm from the body of the device. Note 7 : Device considered a two terminal device: Pins 1, 2, 3.and 4 shorted together and pins 5, 6, 7, and 8 shorted together. 568 TLP759 (TLP759) ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAX.| UNIT Forward Voltage VF Ip=16mA _ 1.65 | 1.85 Vv Forward Voltage VE/ATa |Ip=16mA _ ~_ _ 5 Temperature Coefficient AVE ayir m 2 mV /C 4 [Reverse Current IR VR=5V 10} A Capacitance Between _ _ Terminals CT VF=0, f=1MHz _ 45 | pF a] Too) [Ir=0mA, Voc=Vo=5.5V _ 3 | 500] nA e oon eel Output IoH (2) [IF=0mA, Voc=30V, Vo=20V _ _ 5 ; Ip=0mA, Vog=30V, Vo=20V 50 HA es OH [Ta=70C 7 F |High Level Supply A Voltage IccH |Ip=OmA, Voc=30V _ 0.01 1) vA Ip=16mA, Voc=4.5V Current Transfer Ratio lo /Ip y =0.4V ce 20 40 | % a o-= a Low Level Output VoL Ip=16mA, Voc=4.5V _ _ o4] Vv a, Voltage I9=2.4mA 2 < = |Resistance (Input-Output) | Rg R.H.S 60%, Vg=500V 5x10] 194) a oO (Note 7) Capacitance (Input-Output) Cs Vg=0, f=1MHz (Note 7) _ 0.8 | pF SWITCHING CHARACTERISTICS (Ta = 25C, VCC = 5V) cHARACTERISTIC |syMBoL|'PST CTR! esr CONDITION | MIN. | TYP. MAX] UNIT Propagation Delay Time Ip=0-16mA, (HL) PHL Voc=5V, Ru=19ka | ~ | O7 | 98) 4s . 1 Propagation Delay Time Ip=16-0mA _ (LH) PLH Voc=5V, RL =19k0 03 | 08) #8 Common Mode Transient Ip=O0mA, Immunity at Logic High CMy Vom =400Vp-p 5000 | 10000 | | V/yus Output (Note 8) Ry =4.1k0 Common Mode Transient 2 Ip=16mA, ; Immunity at Logic Low CM, Vom =400Vp-p 5000]/10000} | V/us Output (Note 8) Rp, =4.1k0 569 TLP759 (TLP759) Note 8 :CMy, is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (VQ <0.8V). CMgy is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state (VQ >2.0V). Note 9 : Maximum electrostatic discharge voltage for any pins: 100V(C=200pF, R=0) TEST CIRCUIT 1: Switching Time Test Circuit PULSE INPUT ( Voc=5V Ip A. BH be, 0 PW =100zs DUTY RATIO =1/10 2 7] 7 C 5Vv Ip MONITOR 3 6} vo 15V_ | f-15V a Vo . VOL S OUTPUT 3 [4] er MONITOR tpHL tpLH | TEST CIRCUIT 2: Common Mode Noise Immunity Test Circuit 400V ; 5 Voc=5V f + 90% * Ip Ly 3} Vom / ae % 7] RL 4 10% oy o{3P | 6} + Vo tr te OUTPUT 4 1 [4] [5 } MONITOR 5Vv (IF =OmA) 2V VCM O | o.8Vv PULSE GENERATOR vo VOL Fo Bon (p= 16mA) 320 (V) 320 (V) CMy= =o H= es), ML= eG) 570 TLP759 (TLP759) AVE/ATa IF 100 50] Ta=25C 4 = 30 36 Z ge E > 10 Mc as E = 3 2 & eG z un fe 1 G & ee ; <2 > 08 fF & So 03 St Q eZ = gs = 01 ao z $e 0.05 xf za & 0.03 xe ao 0.01 A 1.0 12 14 1.6 18 20 O.1 03 0.5 1 3. O58 10 30 FORWARD VOLTAGE Vp (V) FORWARD CURRENT lp (mA) loud) - Ta Io - Ir Voo=5V eB z g 3 Vor04v & = Ta =25C 3 1 5 & & 5 08 3 Zo a 5 o a 2 BE al 3 = z & 0.05 = o = 0.03 = = 0.01 0 40 80 120 160 O1 0905 1 3.5 10 3050 100 300 AMBIENT TEMPERATURE Ta (C) FORWARD CURRENT [pp (mA) lo/Ip Ip lo/Ip - Ta 12 19 i>) Ss = ne o 08 & & B Q z =) 3 S 0.6 = 5 z NORMALIZED TO a o O4 Ip=16mA % Zz 2 Voc=45V 5 02 Vg=04v 8 03 05 ! 3 6 10 30 50 -40 20 0 20 40 60 80 100 FORWARD CURRENT Ip (nA) AMBIENT TEMPERATURE Ta (C) 571 TLP759 (TLP759) lo - Vo Vo Ir = Ip Voc=5 4 = = RL 2 > Yo Ee tl Qo g oe a Ta=25C 5 3 > 5 5 B BE BE 2 3 [pesmA Oo @ 1 2 3 4 5 6 7 0 4 8 12 16 20 24 OUTPUT VOLTAGE Vg (V) FORWARD CURRENT Ip (mA) toHL, toh Rb o an PROPAGATION DELAY TIME tpHL, tpLH (Ss) 2S 8 OL 1 3 5 10 30 50 100 LOAD RESISTANCE Ry, (kQ) 572