Switching and General Purpose Transistors 2N3250, A (siticon) 2N3251,A 2N3250A, 2N3251A JAN 2N3250,A, 2N3251,A HI-REL Vero = 40-60 V Ic = 200 mA 0 f; = 250-300 MHz x PNP silicon annular transistors for high-speed switching and amplifier applications. Collector connected to case CASE 22 (TO-18) MAXIMUM RATINGS . 2N3250 {2N3250A . Rating Symbol | 9N3251 |2N3251a| Unit Collector-Base Voltage Vos 50 60 Vdc Collector-Emitter Voltage Vcro 40 60 Vdc Emitter-Base Voltage Vep 5 Vde Collector Current Io 200 mAdc Total Device Dissipation Watt @ 25C Case Temperature Py bo mW/C Derating Factor Above 25C , Total Device Dissipation Watt @ 25C Ambient Temperature Pp 0. 36 at 8 ; 96 2.06 mWw/C Derating Factor Above 25C Junction Operating Temperature Ty 200 C Storage Temperature Range Totg ~-65 to +200 C Thermal Resistance SIA 0. 49 C/mW 95 0.15 c/mWw 8-208