This document is a general product description and is subject t o change without notice. Hynix Semiconductor do es not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.3 / Nov. 2008 1
240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb E version
This Hynix unbuffered Dual In-Line Memory Module (DIMM) series consists of 1Gb version E DDR2
SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb
version E based DDR2 Unbuffered DIMM series provide a high performance 8 byte interface in 133.35mm
width form factor of industry standard. It is suitable for easy interchange and addition.
FEATURES
ORDERING INFORMATION
Part Name Density Org. # of
DRAMs # of
ranks Materials ECC
HMP164U6EFR8C-C4/Y5/S6/S5 512MB 64Mx64 4 1 Halogen free None
HMP112U6EFR8C-C4/Y5/S6/S5 1GB 128Mx64 8 1 Halogen free None
HMP112U7EFR8C-C4/Y5/S6/S5 1GB 128Mx72 9 1 Halogen free ECC
HMP125U6EFR8C-C4/Y5/S6/S5 2GB 256Mx64 16 2 Halogen free None
HMP125U7EFR8C-C4/Y5/S6/S5 2GB 256Mx72 18 2 Halogen free ECC
• JEDEC standard Double Data Rate2 Syn-
chrnous DRAMs (DDR2 SDRAMs) with 1.8V +/
- 0.1V Power Supply
• All inputs and outputs are compatible with
SSTL_1.8 interface
• 8 Bank architecture
•Posted CAS
• Programmable CAS Latency 3,4,5, 6
• OCD (Off-Chip Driver Impedance Adjustment)
• ODT (On-Die Termination)
• Fully differential clock operations (CK & CK)
• Programmable Burst Length 4 / 8 with both
sequential and interleave mode
• Auto refresh and self refresh supported
• 8192 refresh cycles / 64ms
• Serial presence detect with EEPROM
• DDR2 SDRAM Package: 60ball
FBGA(128Mx8),
84ball FBGA(64Mx16)
• 133.35 x 30.00 mm form factor
• RoHS compliant & Halogen-free
Rev. 0.3 / Nov. 2008 2
1240pin DDR2 SDRAM Unbuffered DIMMs
SPEED GRADE & KEY PARAMETERS
ADDRESS TABLE
C4
(DDR2-533) Y5
(DDR2-667) S6
(DDR2-800) S5
(DDR2-800) Unit
Speed@CL3 400 400 -400 Mbps
Speed@CL4 533 533 533 533 Mbps
Speed@CL5 -667 667 800 Mbps
Speed@CL6 - - 800 -Mbps
CL-tRCD-tRP 4-4-4 5-5-5 6-6-6 5-5-5 tCK
Density Organization Ranks SDRAMs # of
DRAMs # of row/bank/co lumn Address Refresh
Method
512MB 64M x 64 1 64Mb x 16 4 13(A0~A12)/3(BA0~BA2)/10(A0~A9) 8K / 64ms
1GB 128M x 64 1 128Mb x 8 8 14(A0~A13)/3(BA0~BA2)/10(A0~A9) 8K / 64ms
1GB 128M x 72 1 128Mb x 8 9 14(A0~A13)/3(BA0~BA2)/10(A0~A9) 8K / 64ms
2GB 256M x 64 2 128Mb x 8 16 14(A0~A13)/3(BA0~BA2)/10(A0~A9) 8K / 64ms
2GB 256M x 72 2 128Mb x 8 18 14(A0~A13)/3(BA0~BA2)/10(A0~A9) 8K / 64ms
Rev. 0.3 / Nov. 2008 3
1240pin DDR2 SDRAM Unbuffered DIMMs
Input/Output Functional Description
Symbol Type Polarity Pin Description
CK[2:0], CK[2:0] SSTL Differential
Crossing
CK and /CK are differential clock inputs. All the DDR2 SDRAM addr/cntl inputs are sam-
pled on the crossing of positive edge of CK and negative edge of /CK. Output (read) data
is reference to the crossing of CK and /CK (Both directions of crossing)
CKE[1:0] SSTL Active High Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when
low. By deactivating the clocks, CKE low initiates the Power Down mode or the Self
Refresh mode.
S[1:0] SSTL Active Low
Enables the associated DDR2 SDRAM command decoder when low and disables the
command decoder when high. When the command decoder is disabled, new commands
are ignored but previous operations continue. Rank 0 is selected by S0; Rank 1 is
selected by S1
RAS, CAS,
WE SSTL Active Low /RAS,/CAS and /WE(ALONG WITH S) define the command being entered.
ODT[1:0] SSTL Active High Asserts on-die termination for DQ, DM, DQS and DQS signals if enabled via the DDR2
SDRAM mode register.
Vref Supply Reference voltage for SSTL18 inputs
VDDQ Supply Power supplies for the DDR2 SDRAM output buffers to provide improved noise immu-
nity . For all current DDR2 unbuffered DIMM designs, VDDQ shares the same power plane
as VDD pins.
BA[2:0] SSTL - Selects which DDR2 SDRAM internal bank of four or eight is activated.
A[9:0], A10/AP,
A[13:11] SSTL -
During a Bank Activate command cycle, Address input difines the row
address(RA0~RA15)
During a Read or Write command cycle, Address input defines the column address when
sampled at the cross point of the rising edge of CK and falling edge of CK. In addition to
the column address, AP is used to invoke autoprecharge operation at the end of the
burst read or write cycle. If AP is high., autoprecharge is selected and BA0-BAn defines
the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge
command cycle., AP is used in conjunction with BA0-BAn to control which bank(s) to
precharge. If AP is high, all banks will be precharged regardless of the state of BA0-BAn
inputs. If AP is low, then BA0-BAn are used to define which bank to precharge.
DQ[63:0],
CB[7:0] SSTL - Data and Check Bit Input/Output pins.
DM[8:0] SSTL Active High
DM is an input mask signal for write data. Input data is masked when DM is sampled
High coincident with that input data during a write access. DM is sampled on both edges
of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS
loading.
VDD,VSS Supply Power and ground for the DDR2 SDRAM input buffers, and core log ic. VDD and VDDQ
pins are tied to VDD/VDDQ planes on these modules.
DQS[8:0],
DQS[8:0] SSTL Differential
crossing
Data strobe for input and output data. For Rawcards using x16 organized DRAMs,
DQ0~7 connect to the LDQS pin of the DRAMs and DQ8~15 connect to the UDQS pin of
the DRAM
SA[2:0] - These signals are tied at the system planar to either VSS or VDD to configure the serial
SPD EEPROM.
SDA - This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A
resister must be connected to VDD to act as a pull up.
SCL - This signal is used to clock data into and out of the SPD EEPROM. A resistor may be
connected from SCL to VDD to act as a pull up on the system board.
VDDSPD Supply Power supply for SPD EEPROM. This supply is separate from the VDD/VDDQ power
plane. EEPROM supply is operable from 1.7V to 3.6V.
Rev. 0.3 / Nov. 2008 4
1240pin DDR2 SDRAM Unbuffered DIMMs
PIN CONFIGURATION
PIN ASSIGNMENT
Pin Name Pin Name Pin Name Pin Name Pin Name Pin Name
1 VREF 41 VSS 81 DQ33 121 VSS 161 NC(CB4)* 201 VSS
2 VSS 42 NC(CB0)* 82 VSS 122 DQ4 162 NC(CB5)* 202 DM4
3 DQ0 43 NC(CB1)* 83 DQS4 123 DQ5 163 VSS 203 NC
4 DQ1 44 VSS 84 DQS4 124 VSS 164 NC(DM8)* 204 VSS
5 VSS 45 NC(DQS8)* 85 VSS 125 DM0 165 NC 205 DQ38
6DQS
0 46 NC(DQS8)* 86 DQ34 126 NC 166 VSS 206 DQ39
7 DQS0 47 VSS 87 DQ35 127 VSS 167 NC(CB6)* 207 VSS
8 VSS 48 NC(CB2)* 88 VSS 128 DQ6 168 NC(CB7)* 208 DQ44
9 DQ2 49 NC(CB3)* 89 DQ40 129 DQ7 169 VSS 209 DQ45
10 DQ3 50 VSS 90 DQ41 130 VSS 170 VDDQ 210 VSS
11 VSS 51 VDDQ 91 VSS 131 DQ12 171 CKE1 211 DM5
12 DQ8 52 CKE0 92 DQS5 132 DQ13 172 VDD 212 NC
13 DQ9 53 VDD 93 DQS5 133 VSS 173 A15 213 VSS
14 VSS 54 BA2 94 VSS 134 DM1 174 A14 214 DQ46
15 DQS1 55 NC 95 DQ42 135 NC 175 VDDQ 215 DQ47
16 DQS1 56 VDDQ 96 DQ43 136 VSS 176 A12 216 VSS
17 VSS 57 A11 97 VSS 137 CK1 177 A9 217 DQ52
18 NC 58 A7 98 DQ48 138 CK1 178 VDD 218 DQ53
19 NC 59 VDD 99 DQ49 139 VSS 179 A8 219 VSS
20 VSS 60 A5 100 VSS 140 DQ14 180 A6 220 CK2
21 DQ10 61 A4 101 SA2 141 DQ15 181 VDDQ 221 CK2
22 DQ11 62 VDDQ 102 NC,TEST1142 VSS 182 A3 222 VSS
1 pin
Front Side
64 pin 65 pin 120 pin
121 pin
Back Side
184 pin 185 pin 240 pin
* The pin names in parenthesises are applied to DIMM with ECC only.
Rev. 0.3 / Nov. 2008 5
1240pin DDR2 SDRAM Unbuffered DIMMs
PIN ASSIGNMENT(Continued)
*NC = No connect
Note:
1. The TEST pin is reserved for bus analysis tools and is not connected on standard memory module products (DIMMs).
2. NC Pins should not be connected to anything, including bussing within the NC group.
Pin Name Pin Name Pin Name Pin Name Pin Name Pin Name
23 VSS 63 A2 103 VSS 143 DQ20 183 A1 223 DM6
24 DQ16 64 VDD 104 DQS6 144 DQ21 184 VDD 224 NC
25 DQ17 65 VSS 105 DQS6 145 VSS 185 CK0 225 VSS
26 VSS 66 VSS 106 VSS 146 DM2 186 CK0 226 DQ54
27 DQS2 67 VDD 107 DQ50 147 NC 187 VDD 227 DQ55
28 DQS2 68 NC 108 DQ51 148 VSS 188 A0 228 VSS
29 VSS 69 VDD 109 VSS 149 DQ22 189 VDD 229 DQ60
30 DQ18 70 A10/AP 110 DQ56 150 DQ23 190 BA1 230 DQ61
31 DQ19 71 BA0 111 DQ57 151 VSS 191 VDDQ 231 VSS
32 VSS 72 VDDQ 112 VSS 152 DQ28 192 RAS 232 DM7
33 DQ24 73 WE 113 DQS7 153 DQ29 193 S0 233 NC
34 DQ25 74 CAS 114 DQS7 154 VSS 194 VDDQ 234 VSS
35 VSS 75 VDDQ 115 VSS 155 DM3 195 ODT0 235 DQ62
36 DQS376 S1 116 DQ58 156 NC 196 A13 236 DQ63
37 DQS3 77 ODT1 117 DQ59 157 VSS 197 VDD 237 VSS
38 VSS 78 VDDQ 118 VSS 158 DQ30 198 VSS 238 VDDSPD
39 DQ26 79 VSS 119 SDA 159 DQ31 199 DQ36 239 SA0
40 DQ27 80 DQ32 120 SCL 160 VSS 200 DQ37 240 SA1
Rev. 0.3 / Nov. 2008 6
1240pin DDR2 SDRAM Unbuffered DIMMs
FUNCTIONAL BLOCK DIAGRAM
512MB(64Mbx64): HMP164U6EFR6C
/S0
/DQS0
DM0
DQS0
D0
DQ0 I/ O 0
DQ1 I/ O 1
DQ2 I/ O 2
DQ3 I/ O 3
DQ4 I/ O 4
DQ5 I/ O 5
DQ6 I/ O 6
I/ O 7
DQ7
/DQS1
DM1
DQS1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
/CS
/LDQS
LDQS
LDM
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
/DQS2
DM2
DQS2
D1
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
/DQS3
DM3
DQS3
/CS
/LDQS
LDQS
LDM
/DQS4
DM4
DQS4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
/DQS5
DM5
DQS5
D2
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
/CS
/LDQS
LDQS
LDM
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
/DQS7
DM7
DQS7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
D3
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
/CS
/LDQS
LDQS
LDM
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
/DQS6
DM6
DQS6
BA0-BA2
A0-A12
/RAS
/CAS
SDRAMS D0-D3
CKE0
/WE
ODT0
I/ O 8
I/ O 9
I/ O 10
I/ O 11
I/ O 12
I/ O 13
I/ O 14
I/ O 15
/UDQS
UDQS
UDM
I/ O 8
I/ O 9
I/ O 10
I/ O 11
I/ O 12
I/ O 13
I/ O 14
I/ O 15
/UDQS
UDQS
UDM I/ O 8
I/ O 9
I/ O 10
I/ O 11
I/ O 12
I/ O 13
I/ O 14
I/ O 15
/UDQS
UDQS
UDM
I/ O 8
I/ O 9
I/ O 10
I/ O 11
I/ O 12
I/ O 13
I/ O 14
I/ O 15
/UDQS
UDQS
UDM
SDRAMS D0-D3
SDRAMS D0-D3
SDRAMS D0-D3
SDRAMS D0-D3
SDRAMS D0-D3
SDRAMS D0-D3
VDD
SPD
VREF
VDD/VDDQ
VSS
Serial PD
DO-D3
DO-D3
DO-D3
Notes:
1. DQ ,DM ,DQ S,/DQ S resistors : 22 Ω +/- 5 % .
2. Bax,Ax,/RAS,/CAS,/W E resistors : 10 Ω +/- 5 % .
SCL SDA
A0 A1
WP Serial PD
SCL
SA0 SA1 SA2
A1
Clock Signal Loads
C K 0 , /CK 0
C K 1 , /CK 1 NC
2
C K 2 , /CK 2 2
Clock Input SDRAMs
Rev. 0.3 / Nov. 2008 7
1240pin DDR2 SDRAM Unbuffered DIMMs
FUNCTIONAL BLOCK DIAGRAM
1GB(128Mbx64): HMP112U6EFR8C
/S0
/DQS0
DM0
DQS0
D0
/CS DQS /DQS
DM
DQ0 I/O 0
DQ1 I/O 1
DQ2 I/O 2
DQ3 I/O 3
DQ4 I/O 4
DQ5 I/O 5
DQ6 I/O 6
I/O 7
DQ7
/DQS1
DM1
DQS1
D1
/CS DQS /DQS
DM
DQ8 I/O 0
DQ9 I/O 1
DQ10 I/O 2
DQ11 I/O 3
DQ12 I/O 4
DQ13 I/O 5
DQ14 I/O 6
I/O 7
DQ15
/DQS2
DM2
DQS2
D2
/CS DQS /DQS
DM
DQ16 I/O 0
DQ17 I/O 1
DQ18 I/O 2
DQ19 I/O 3
DQ20 I/O 4
DQ21 I/O 5
DQ22 I/O 6
I/O 7
DQ23
/DQS3
DM3
DQS3
D3
/CS DQS /DQS
DM
DQ24 I/O 0
DQ25 I/O 1
DQ26 I/O 2
DQ27 I/O 3
DQ28 I/O 4
DQ29 I/O 5
DQ30 I/O 6
I/O 7
DQ31
/DQS4
DM4
DQS4
D4
/CS DQS /DQS
DM
DQ32 I/O 0
DQ33 I/O 1
DQ34 I/O 2
DQ35 I/O 3
DQ36 I/O 4
DQ37 I/O 5
DQ38 I/O 6
I/O 7
DQ39
/DQS5
DM5
DQS5
D5
/CS DQS /DQS
DM
DQ40 I/O 0
DQ41 I/O 1
DQ42 I/O 2
DQ43 I/O 3
DQ44 I/O 4
DQ45 I/O 5
DQ46 I/O 6
I/O 7
DQ47
/DQS6
DM6
DQS6
D6
/CS DQS /DQS
DM
DQ48 I/O 0
DQ49 I/O 1
DQ50 I/O 2
DQ51 I/O 3
DQ52 I/O 4
DQ53 I/O 5
DQ54 I/O 6
I/O 7
DQ55
/DQS7
DM7
DQS7
D7
/CS DQS /DQS
DM
DQ56 I/O 0
DQ57 I/O 1
DQ58 I/O 2
DQ59 I/O 3
DQ60 I/O 4
DQ61 I/O 5
DQ62 I/O 6
I/O 7
DQ63
VDD SPD
VREF
VDD/VDDQ
VSS
Serial
PD
DO-D7
DO-D7
DO-D7
BA0-BA2
A0-A13
/RAS
/CAS
SDRAMS D0-7
CKE0
/WE
ODT0
SDRAMS D0-7
SDRAMS D0-7
SDRAMS D0-7
SDRAMS D0-7
SDRAMS D0-7
SDRAMS D0-7
SCL SDA
A0 A1
WP Serial PD
SCL
SA0 SA1 SA2
A1
Notes:
1. DQ,DM,DQS,/DQS resistors : 22 Ω +/- 5 %.
2. Bax,Ax,/RAS,/CA S,/WE resistors : 5.1 Ω +/- 5 %.
Clock Signal Loads
CK0, /CK0
CK1, /CK1 2
3
CK2, /CK2 3
Clock Input SDRAMs
Rev. 0.3 / Nov. 2008 8
1240pin DDR2 SDRAM Unbuffered DIMMs
FUNCTIONAL BLOCK DIAGRAM
1GB(128Mbx72) - HMP112U7EFR8C
/S0
/DQS0
DM0
DQS0
D0
/CS DQS /DQS
DM
DQ0 I/O 0
DQ1 I/O 1
DQ2 I/O 2
DQ3 I/O 3
DQ4 I/O 4
DQ5 I/O 5
DQ6 I/O 6
I/O 7
DQ7
/DQS1
DM1
DQS1
D1
/CS DQS /DQS
DM
DQ8 I/O 0
DQ9 I/O 1
DQ10 I/O 2
DQ11 I/O 3
DQ12 I/O 4
DQ13 I/O 5
DQ14 I/O 6
I/O 7
DQ15
/DQS2
DM2
DQS2
D2
/CS DQS /DQS
DM
DQ16 I/O 0
DQ17 I/O 1
DQ18 I/O 2
DQ19 I/O 3
DQ20 I/O 4
DQ21 I/O 5
DQ22 I/O 6
I/O 7
DQ23
/DQS3
DM3
DQS3
D3
/CS DQS /DQS
DM
DQ24 I/O 0
DQ25 I/O 1
DQ26 I/O 2
DQ27 I/O 3
DQ28 I/O 4
DQ29 I/O 5
DQ30 I/O 6
I/O 7
DQ31
/DQS8
DM8
DQS8
D8
/CS DQS /DQS
DM
CB0 I/O 0
CB1 I/O 1
CB2 I/O 2
CB3 I/O 3
CB4 I/O 4
CB5 I/O 5
CB6 I/O 6
I/O 7
CB7
/DQS4
DM4
DQS4
D4
/CS DQS /DQS
DM
DQ32 I/O 0
DQ33 I/O 1
DQ34 I/O 2
DQ35 I/O 3
DQ36 I/O 4
DQ37 I/O 5
DQ38 I/O 6
I/O 7
DQ39
/DQS5
DM5
DQS5
D5
/CS DQS /DQS
DM
DQ40 I/O 0
DQ41 I/O 1
DQ42 I/O 2
DQ43 I/O 3
DQ44 I/O 4
DQ45 I/O 5
DQ46 I/O 6
I/O 7
DQ47
/DQS6
DM6
DQS6
D6
/CS DQS /D QS
DM
DQ48 I/O 0
DQ49 I/O 1
DQ50 I/O 2
DQ51 I/O 3
DQ52 I/O 4
DQ53 I/O 5
DQ54 I/O 6
I/O 7
DQ55
/DQS7
DM7
DQS7
D7
/CS DQS /DQS
DM
DQ56 I/O 0
DQ57 I/O 1
DQ58 I/O 2
DQ59 I/O 3
DQ60 I/O 4
DQ61 I/O 5
DQ62 I/O 6
I/O 7
DQ63
A1
SCL SDA
A0 A1
WP Serial PD
SCL
SA0 SA1 SA2
A1
VDD SPD
VREF
VDD/VDDQ
VSS
Serial
PD
DO-D8
DO-D8
DO-D8
BA0-BA2
A0-A13
/RAS
/CAS
SDRAMS D 0 -7,D 8
CKE0
/WE
ODT0
SDRAMS D 0 -7,D 8
SDRAMS D0-7,D8
SDRAMS D0-7,D8
SDRAMS D0-7,D8
SDRAMS D 0 -7,D 8
SDRAMS D0-7,D8
Notes:
1. DQ,DM,DQS,/DQS resistor s : 22 Ω +/- 5 %.
2. Bax,Ax,/RAS,/CAS,/WE resistors : 5.1 Ω +/- 5 %.
Clock Signal Loads
CK0, /CK0
CK1, /CK1 3
3
CK2, /CK2 3
Clock Input SDRAMs
Rev. 0.3 / Nov. 2008 9
1240pin DDR2 SDRAM Unbuffered DIMMs
FUNCTIONAL BLOCK DIAGRAM
2GB(256Mbx64) - HMP125U6EFR8C
/S0
/DQS0
DM0
DQS0
D0
/
DQ0 I/ O 0
DQ1 I/ O 1
DQ2 I/ O 2
DQ3 I/ O 3
DQ4 I/ O 4
DQ5 I/ O 5
DQ6 I/ O 6
I/ O 7
DQ7
/DQS1
DM1
DQS1
D1
DQ8 I/ O 0
DQ9 I/ O 1
DQ10 I/ O 2
DQ11 I/ O 3
DQ12 I/ O 4
DQ13 I/ O 5
DQ14 I/ O 6
I/ O 7
DQ15
/DQS2
DM2
DQS2
D2
DQ16 I/ O 0
DQ17 I/ O 1
DQ18 I/ O 2
DQ19 I/ O 3
DQ20 I/ O 4
DQ21 I/ O 5
DQ22 I/ O 6
I/ O 7
DQ23
/DQS3
DM3
DQS3
D3
DQ24 I/ O 0
DQ25 I/ O 1
DQ26 I/ O 2
DQ27 I/ O 3
DQ28 I/ O 4
DQ29 I/ O 5
DQ30 I/ O 6
I/ O 7
DQ31
D8
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
D9
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
D10
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
D11
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
D12
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/O 7
D15
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/O 7
/DQS4
DM4
DQS4
D4
DQ32 I/O 0
DQ33 I/O 1
DQ34 I/O 2
DQ35 I/O 3
DQ36 I/O 4
DQ37 I/O 5
DQ38 I/O 6
I/O 7
DQ39
/DQS5
DM5
DQS5
D5
DQ40 I/O 0
DQ41 I/O 1
DQ42 I/O 2
DQ43 I/O 3
DQ44 I/O 4
DQ45 I/O 5
DQ46 I/O 6
I/O 7
DQ47
/DQS6
DM6
DQS6
D6
DQ48 I/ O 0
DQ49 I/ O 1
DQ50 I/ O 2
DQ51 I/ O 3
DQ52 I/ O 4
DQ53 I/ O 5
DQ54 I/ O 6
I/O 7
DQ55
/DQS7
DM7
DQS7
D7
DQ56 I/O 0
DQ57 I/O 1
DQ58 I/O 2
DQ59 I/O 3
DQ60 I/O 4
DQ61 I/O 5
DQ62 I/O 6
I/O 7
DQ63
D14
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/O 7
D13
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/O 7
/S1
SCL SDA
A0 A1
WP Serial PD
SCL
SA0 SA1 SA2
A1
BA0-BA2
A0-A15
/RAS
/CAS
SDRAMS D0-D15
CKE0
/WE
CKE1
ODT0
ODT1
SDRAMS D0-D15
SDRAMS D0-D7
SDRAMS D8-D15
SDRAMS D0-D15
SDRAMS D0-D15
SDRAMS D0-D15
SDRAMS D0-D7
SDRAMS D8-D15
/CS D QS /DQS
DM /CS DQS /DQS
DM
/CS DQS /DQS
DM
/CS DQ S /DQS
DM
/CS DQ S /DQS
DM /CS DQS /DQS
DM
/CS DQS /DQS
DM /CS DQ S /DQS
DM
/CS DQ S /DQS
DM
/CS DQS /DQS
DM
/CS DQS /DQS
DM /CS DQS /DQS
DM
/CS DQ S /DQS
DM
/CS DQS /DQS
DM
Notes:
1. DQ,DM ,DQS ,/DQ S r e sisto r s : 2 2 Ω +/- 5 %.
2. Bax,Ax,/RAS,/CAS,/WE resistors : 7.5 Ω +/- 5 % .
VDD SPD
VREF
VDD/VDDQ
VSS
Serial
PD
DO-D15
DO-D15
DO-D15
Clock Signal Loads
CK0, /CK0
CK1, /CK1 4
6
CK2, /CK2 6
Clock Input SDRAMs
Rev. 0.3 / Nov. 2008 10
1240pin DDR2 SDRAM Unbuffered DIMMs
FUNCTIONAL BLOCK DIAGRAM
2GB(256Mbx72) - HMP125U7EFR8C
/S0
/DQS0
DM0
DQS0
D0
/ C S D QS /DQS
DM
DQ0 I/ O 0
DQ1 I/ O 1
DQ2 I/ O 2
DQ3 I/ O 3
DQ4 I/ O 4
DQ5 I/ O 5
DQ6 I/ O 6
I/ O 7
DQ7
/DQS1
DM1
DQS1
D1
/ C S D QS /DQS
DM
DQ8 I/ O 0
DQ9 I/ O 1
DQ10 I/ O 2
DQ11 I/ O 3
DQ12 I/ O 4
DQ13 I/ O 5
DQ14 I/ O 6
I/ O 7
DQ15
/DQS2
DM2
DQS2
D2
/ C S D QS /DQS
DQ16 I/ O 0
DQ17 I/ O 1
DQ18 I/ O 2
DQ19 I/ O 3
DQ20 I/ O 4
DQ21 I/ O 5
DQ22 I/ O 6
I/ O 7
DQ23
/DQS3
DM3
DQS3
D3
/ C S D QS /DQS
DM
DQ24 I/ O 0
DQ25 I/ O 1
DQ26 I/ O 2
DQ27 I/ O 3
DQ28 I/ O 4
DQ29 I/ O 5
DQ30 I/ O 6
I/ O 7
DQ31
/DQS8
DM8
DQS8
D8
/ C S D QS /DQS
DM
CB0 I/ O 0
CB1 I/ O 1
CB2 I/ O 2
CB3 I/ O 3
CB4 I/ O 4
CB5 I/ O 5
CB6 I/ O 6
I/ O 7
CB7
D9
/ CS D QS /DQS
DM
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
D10
/ CS D QS /DQS
DM
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
D11
/ CS D QS /DQS
DM
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
D12
/ CS D QS /DQS
DM
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
D17
/ CS D QS /DQS
DM
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
D13
/ CS DQS /DQS
DM
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
D16
/ CS DQS /DQS
DM
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
/DQS4
DM4
DQS4
D4
/ C S D QS /DQS
DM
DQ32 I/O 0
DQ33 I/O 1
DQ34 I/O 2
DQ35 I/O 3
DQ36 I/O 4
DQ37 I/O 5
DQ38 I/O 6
I/ O 7
DQ39
/DQS5
DM5
DQS5
D5
/ C S D QS /DQS
DM
DQ40 I/O 0
DQ41 I/O 1
DQ42 I/O 2
DQ43 I/O 3
DQ44 I/O 4
DQ45 I/O 5
DQ46 I/O 6
I/ O 7
DQ47
/DQS6
DM6
DQS6
D6
/ CS DQS /DQS
DM
DQ48 I/ O 0
DQ49 I/ O 1
DQ50 I/ O 2
DQ51 I/ O 3
DQ52 I/ O 4
DQ53 I/ O 5
DQ54 I/ O 6
I/ O 7
DQ55
/DQS7
DM7
DQS7
D7
/ C S D QS /DQS
DM
DQ56 I/O 0
DQ57 I/O 1
DQ58 I/O 2
DQ59 I/O 3
DQ60 I/O 4
DQ61 I/O 5
DQ62 I/O 6
I/ O 7
DQ63
D15
/ CS DQS /DQS
DM
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
D14
/ CS DQS /DQS
DM
I/ O 0
I/ O 1
I/ O 2
I/ O 3
I/ O 4
I/ O 5
I/ O 6
I/ O 7
/S1
SCL
SDA
A0 A1
WP Serial PD
SCL
SA0 SA1
SA2
A1
BA0-BA2
A0-A13
/RAS
/CAS
SDRAMS D0-D17
CKE0
/WE
CKE1
ODT0
ODT1
SDRAM S D0-D 17
SDRAMS D0-D8
SDRAMS D9-D17
SDRAM S D0-D 17
SDRAMS D0-D17
SDRAMS D0-D17
SDRAMS D0-D8
SDRAM S D9-D 17
Notes:
1. DQ ,DM ,DQS ,/DQS resistors : 22 Ω +/- 5 %.
2 . Ba x,Ax ,/RAS,/CAS,/W E res is to rs : 7 .5 Ω +/- 5 %.
VDD SPD
VREF
VDD/VDDQ
VSS
Serial
PD
DO-D17
DO-D17
DO-D17
Clock Signal Load s
CK0, /CK0
CK1, /CK1
6
6
CK2, /CK2
6
Clock Input
SDRAMs
Rev. 0.3 / Nov. 2008 11
1240pin DDR2 SDRAM Unbuffered DIMMs
ABSOLUTE MAXIMUM RATINGS
Operation Conditions and Environmental Parameters
Note:
1. S tress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device
functional operation at or above th e conditions indicated is not implied. Expousure to absolute maximum rating con
ditions for extended periods may affect reliablility.
2. Up to 9850 ft.
3. If the DRAM case te mp e rature is Above 85oC, the Auto-Refresh command interval has to be reduced to
tREFI=3.9us. For Measurement conditio ns of TCASE, please refer to the JEDEC docume nt JESD51-2.
DC OPERATING CONDITIONS (SSTL_1.8)
Note:
1. Min. Typ. and Max. values increase by 100mV for C3(DDR2-533 3-3-3) speed option.
2. VDDQ tracks with VDD,VDDL tracks with VDD. AC parameters are measured with VDD,VDDQ and VDD.
3. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the
value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track vari-
ations in VDDQ.
4. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc).
5. VTT of transmitting device must track VREF of receiving device.
Parameter Symbol Value Unit Note
Voltage on VDD pin relati ve to Vss VDD - 1.0 ~ 2.3 V 1
Voltage on VDDQ pin relative to Vss VDDQ - 0.5 ~ 2.3 V 1
Voltage on any pin relative to Vss VIN, VOUT - 0.5 ~ 2.3 V 1
Parameter Symbol Rating Units Notes
DIMM Operating temperature (ambient) TOPR 0 ~ +55 oC
Storage Temperature TSTG -50 ~ +100 oC1
Storage Humidity (without condensation) HSTG 5 to 95 % 1
DIMM Barometric Pressure (operating & storage) PBAR 105 to 69 K Pascal 2
DRAM Compone nt Case Te mperature Range TCASE 0 ~+95 oC3
Symbol Parameter Rating Units Notes
Min. Typ. Max.
VDD Supply Voltage 1.7 1.8 1.9 V 1
VDDL Supply Voltage for DLL 1.7 1.8 1.9 V 1,2
VDDQ Supply Voltage for Output 1.7 1.8 1.9 V 1,2
VREF Input Reference Voltage 0.49*VDDQ 0.50*VDDQ 0.51*VDDQ mV 3,4
VTT Termination Voltage VREF-0.04 VREF VREF+0.04 V 5
VDDSPD EEPROM Supply Voltage 1.7 - 3.6 V
Rev. 0.3 / Nov. 2008 12
1240pin DDR2 SDRAM Unbuffered DIMMs
INPUT DC LOGIC LEVEL
INPUT AC LOGIC LEVEL
AC INPUT TEST CONDITIONS
Note:
1. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device
under test.
2. The input signal minimum slew rate is to be maintain ed over the range from VREF to VIH(ac) min for rising edges
and the range from VREF to VIL(ac) max for falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL (ac) to VIH (ac) on the positive transitions
and VIH (ac) to VIL (ac) on the negative transitions.
Parameter Symbol Min Max Unit Note
dc Input logic HIGH VIH(DC) VREF + 0.125 VDDQ + 0.3 V
dc Input logic LOW VIL(DC) -0.30 VREF - 0.125 V
Parameter Symbol DDR2 400, 53 3 DDR2 667, 800 Unit Note
Min Max Min Max
AC Input logic High VIH(AC) VREF + 0.250 - VREF + 0.200 - V
AC Input logic Low VIL(AC) -V
REF - 0.250 - VREF - 0.200 V
Symbol Condition Value Units Notes
VREF Input reference voltage 0.5 * VDDQ V1
VSWING(MAX) Input signal maximum peak to peak swing 1.0 V 1
SLEW Input signal mini mu m sl ew rat e 1.0 V/ns 2, 3
VDDQ
VIH(ac) min
VIH(dc) min
VREF
VIL(dc) max
VIL(ac) max
VSS
< Figure: AC Input Test Signal Waveform >
V
SWING(MAX)
delta TR
delta TF
V
REF
-
VIL
(ac)
max
delta TF
Falling Slew = Rising Slew = V
IH(ac)
min - V
REF
delta TR
Rev. 0.3 / Nov. 2008 13
1240pin DDR2 SDRAM Unbuffered DIMMs
Differential Input AC logic Level
1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS,
LDQS, UDQS and UDQS.
2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as
CK, DQS, LDQS or UDQS) level and VCP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The
minimum value is equal to VIH(DC) - VIL(DC).
Note:
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal
(such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS).
The minimum value is equal to V IH(AC) - VIL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to
track variations in VDDQ. VIX(AC) indicates the voltage at which differential input signals must cross.
DIFFERENTIAL AC OUTPUT PARAMETERS
Note:
1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to
track variations in VDDQ. VOX(AC) indicates the voltage at which differential output signals must cross.
Symbol Parameter Min. Max. Units Note
VID (ac) ac differential input voltage 0.5 VDDQ + 0. 6 V 1
VIX (ac) ac differential cross point voltage 0.5 * VDDQ - 0.175 0.5 * VDDQ + 0.175 V 2
Symbol Parameter Min. Max. Units Note
VOX (ac) ac differential cross point voltage 0.5 * VDDQ - 0.125 0.5 * VDDQ + 0.125 V 1
VDDQ
Crossing point
VSSQ
VTR
VCP
VID VIX or VOX
< Differential signal levels >
Rev. 0.3 / Nov. 2008 14
1240pin DDR2 SDRAM Unbuffered DIMMs
OUTPUT BUFFER LEVELS
OUTPUT AC TEST CONDITIONS
Note:
1. The VDDQ of the device under test is referenced.
OUTPUT DC CURRENT DRIVE
Note:
1.VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and
VDDQ - 280 mV.
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.
3. The dc value of VREF applied to the receiving device is set to VTT
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device
drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an
SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating po int alon g a 21 ohm
load line to define a convenient driver current for measurement.
Symbol Parameter SSTL_18 Units Notes
VOTR Output Timing Measurement Reference Level 0.5 * VDDQ V1
Symbol Parameter SSTl_18 Units Notes
IOH(dc) Output Minimum Source DC Current - 13.4 mA 1, 3, 4
IOL(dc) Output Minimum Sink DC Current 13.4 mA 2, 3, 4
Rev. 0.3 / Nov. 2008 15
1240pin DDR2 SDRAM Unbuffered DIMMs
PIN Capacitance (VDD=1.8V,VDDQ=1.8V, TA=25°C)
512MB: HMP164U6EFR6C
1GB: HMP112 U6EFR8C
1GB: HMP112 U7EFR8C
2GB: HMP125U6EFR8C
2GB: HMP125U7EFR8C
Note:
1. Pins not under test are tied to GND.
2. These value are guaranteed by design and tested on a sample basis only.
Pin Symbol Min Max Unit
CK, CK CCK 18 22 pF
CKE, ODT,CS CI1 57 63 pF
Address, RAS, CAS, WE CI2 42 48 pF
DQ, DM, DQS, DQS CIO 7 9 pF
Pin Symbol Min Max Unit
CK, CK CCK 22 30 pF
CKE, ODT,CS CI1 62 84 pF
Address, RAS, CAS, WE CI2 42 64 pF
DQ, DM, DQS, DQS CIO 6 9 pF
Pin Symbol Min Max Unit
CK, CK CCK 22 30 pF
CKE, ODT, CS CI1 63 85 pF
Address, RAS, CAS, WE CI2 43 66 pF
DQ, DM, DQS, DQS CIO 6 9 pF
Pin Symbol Min Max Unit
CK, CK CCK 22 35 pF
CKE, ODT, CS CI1 64 87 pF
Address, RAS, CAS, WE CI2 50 88 pF
DQ, DM, DQS, DQS CIO 8 13 pF
Pin Symbol Min Max Unit
CK, CK CCK 23 35 pF
CKE, ODT, CS CI1 65 89 pF
Address, RAS, CAS, WE CI2 52 92 pF
DQ, DM, DQS, DQS CIO 9 13 pF
Rev. 0.3 / Nov. 2008 16
1240pin DDR2 SDRAM Unbuffered DIMMs
IDD SPECIFICATIONS (TCASE: 0 to 95°C)
512MB, 64M x 64 U-DIMM: HMP164U6EFR6C
Note: 1. IDD6 current values are guaranted up to Tca se of 85°C max.
Symbol C4
(DDR2 533@CL 4) Y5
(DDR2 667@CL 5) S5/S6
(DDR2 800@CL5&6) Unit Note
IDD0 340 360 380 mA
IDD1 440 460 480 mA
IDD2P 40 40 40 mA
IDD2Q 180 120 128 mA
IDD2N 140 160 180 mA
IDD3P(F) 100 100 100 mA
IDD3P(S) 48 48 48 mA
IDD3N 180 200 220 mA
IDD4W 620 800 920 mA
IDD4R 620 740 860 mA
IDD5B 640 660 680 mA
IDD6 40 40 40 mA 1
IDD7 920 1040 1160 mA
Rev. 0.3 / Nov. 2008 17
1240pin DDR2 SDRAM Unbuffered DIMMs
IDD SPECIFICATIONS (TCASE: 0 to 95°C)
1GB, 128M x 64 U-DIMM: HMP112U6EFR8C
1GB, 128M x 72 ECC U-DIMM: HMP112U7EFR8C
Note: 1. IDD6 current values are guaranted up to Tcase of 85°C max.
Symbol C4
(DDR2 533@CL 4) Y5
(DDR2 667@CL 5) S5/S6
(DDR2 800@CL5&6) Unit Note
IDD0 520 560 600 mA
IDD1 600 640 680 mA
IDD2P 80 80 80 mA
IDD2Q 216 240 256 mA
IDD2N 280 320 360 mA
IDD3P(F) 200 200 200 mA
IDD3P(S) 96 96 96 mA
IDD3N 360 400 440 mA
IDD4W 960 1160 1360 mA
IDD4R 960 1120 1280 mA
IDD5B 1280 1320 1360 mA
IDD6 80 80 80 mA 1
IDD7 1400 1560 1840 mA
Symbol C4
(DDR2 533@CL 4) Y5
(DDR2 667@CL 5) S5/S6
(DDR2 800@CL 5) Unit Note
IDD0 585 630 675 mA
IDD1 675 720 765 mA
IDD2P 90 90 90 mA
IDD2Q 243 270 288 mA
IDD2N 315 360 405 mA
IDD3P(F) 225 225 225 mA
IDD3P(S) 108 108 108 mA
IDD3N 405 450 495 mA
IDD4W 1080 1305 1530 mA
IDD4R 1080 1260 1440 mA
IDD5B 1440 1485 1530 mA
IDD6 90 90 90 mA 1
IDD7 1575 1755 2070 mA
Rev. 0.3 / Nov. 2008 18
1240pin DDR2 SDRAM Unbuffered DIMMs
2GB, 256M x 64 U - DIMM: HMP125U6EFR8C
2GB, 256M x 72 ECC U-DIMM: HMP125U7EFR8C
Note: 1. IDD6 current values are guaranted up to Tca se of 85°C max.
Symbol C4
(DDR2 533@CL 4) Y5
(DDR2 667@CL 5) S5/S6
(DDR2 800@CL5&6) Unit Note
IDD0 800 880 960 mA
IDD1 880 960 1040 mA
IDD2P 160 160 160 mA
IDD2Q 432 480 512 mA
IDD2N 560 640 720 mA
IDD3P(F) 400 400 400 mA
IDD3P(S) 192 192 192 mA
IDD3N 720 800 880 mA
IDD4W 1240 1480 1720 mA
IDD4R 1240 1440 1640 mA
IDD5B 1560 1640 1720 mA
IDD6 160 160 160 mA 1
IDD7 1680 1880 2200 mA
Symbol C4
(DDR2 533@CL 4) Y5
(DDR2 667@CL 5) S5/S6
(DDR2 800@CL5&6) Unit Note
IDD0 900 990 1080 mA
IDD1 990 1080 1170 mA
IDD2P 180 180 180 mA
IDD2Q 486 540 576 mA
IDD2N 630 720 810 mA
IDD3P(F) 450 450 450 mA
IDD3P(S) 216 216 216 mA
IDD3N 810 900 990 mA
IDD4W 1395 1665 1935 mA
IDD4R 1395 1620 1845 mA
IDD5B 1755 1845 1935 mA
IDD6 180 180 180 mA 1
IDD7 1890 2115 2475 mA
Rev. 0.3 / Nov. 2008 19
1240pin DDR2 SDRAM Unbuffered DIMMs
IDD MEASUREMENT CONDITIONS
Note:
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is specified by AC Parametric Test Condition
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQ S, LDQS, UDQS, and UDQS. IDD values must be met
with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
LOW is defined as Vin ≤ VILAC (max)
HIGH is defined as Vin ≥ VIHAC (min)
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control sig-
nals, and inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not
including masks or strobes.
Symbol Conditions Units
IDD0 Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin
(IDD);CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus
inputs are SWITCHING mA
IDD1 Operating one bank active-read-precharge current; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0; tCK =
tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin (IDD), tRCD = tRCD(IDD); CKE is HIGH, CS is HIGH between
valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W mA
IDD2P Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING mA
IDD2Q Precharge quiet standby current; All banks idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH; Other control
and address bus inputs are STABLE; Data bus inputs are FLOATING mA
IDD2N Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA
IDD3P Active power-down current; All banks open; tCK = tCK(IDD);
CKE is LOW; Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0 mA
Slow PDN Exit MRS(12) = 1 mA
IDD3N Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASma x (IDD), tRP =tRP(IDD); CKE is
HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data
bus inputs are SWITCHING mA
IDD4W Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK
= tCK(IDD), tRAS = tRASmax (IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA
IDD4R Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD),
AL = 0; tCK = tCK(IDD), tRAS = tRASmax (IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid
commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W mA
IDD5B Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is
HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING mA
IDD6 Self refresh current; CK and CK at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are FLOATING; Data bus inputs are FLOATING.
IDD6 current values are guaranted up to Tcase of 85℃ max.
Normal mA
Low Power
IDD7
Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD),
AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE
is HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data
pattern is same as IDD4R; - Refer to the following page for detailed timing conditions
mA
Rev. 0.3 / Nov. 2008 20
1240pin DDR2 SDRAM Unbuffered DIMMs
Electrical Characteristics & AC Timings
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
AC Timing Parameters by Speed Grade
Speed DDR2-800
(S5) DDR2-800 (S6) DDR2-667
(Y5) DDR2-533 (C4) Unit
Bin (CL-tRCD-tRP) 5-5-5 6-6-6 5-5-5 4-4-4
Parameter min min min min
CAS Latency 5654ns
tRCD 12.5 15 15 15 ns
tRP 12.5 15 15 15 ns
tRC 57.5 45 60 60 ns
tRAS 45 60 45 45 ns
Parameter Symbol DDR2-400 DDR2-533 Unit Note
Min Max Min Max
Data-Out edge to Cl ock edge Skew tAC -600 600 -500 500 ps
DQS-Out edge to Clock edge Skew tDQSCK -500 500 -500 450 ns
Clock High Level Width tCH 0.45 0.55 0.45 0.55 CK
Clock Low Level Width tCL 0.45 0.55 0.45 0.55 CK
Clock Half Period tHP min
(tCL, tCH) -min
(tCL, tCH) -ns
System Clock Cycle Time tCK 5000 8000 3750 8000 ps
DQ and DM input setup time tDS 150 - 100 - ps 1
DQ and DM input hold time tDH 275 - 225 - ps 1
Control & Address input Pulse Width for each input tIPW 0.6 - 0.6 - tCK
DQ and DM input pulse width for each input pulse width
for each input tDIPW 0.35 - 0.35 - tCK
Data-out high-impedance window from CK, /CK tHZ - tAC max - tAC max ps
DQS low-impedance time from CK/CK tLZ(DQS) tAC min tAC max tAC min tAC max ps
DQ low-impedance time from CK/CK tLZ(DQ) 2*tAC min tAC max 2*tAC min tAC max ps
DQS-DQ skew for DQS and associated DQ signals tDQSQ - 350 -300ps
DQ hold skew factor tQHS - 450 -400ps
DQ/DQS output hold time from DQS tQH tHP - tQHS -tHP - tQHS -ps
Write command to first DQS latching transition tDQSS WL - 0.25 WL + 0.25 WL - 0.25 WL + 0.25 tCK
DQS input high pulse width tDQSH 0.35 -0.35 -tCK
DQS input low pulse width tDQSL 0.35 -0.35 -tCK
DQS falling edge to CK setup time tDSS 0.2 -0.2 -tCK
DQS falling edge hold time from CK tDSH 0.2 -0.2 -tCK
Mode register set command cycle time tMRD 2 - 2 - tCK
Write preamble tWPRE 0.35 -0.35 -tCK
Rev. 0.3 / Nov. 2008 21
1240pin DDR2 SDRAM Unbuffered DIMMs
- continued -
Note:
1. For details and notes, please refer to the relevant HYNIX component datasheet (HY5PS1G[8, 16]31CFP).
2. 0°C ≤ TCASE ≤ 85°C
3. 85°C ＜ TCASE ≤ 95°C
Parameter Symbol DDR2-400 DDR2-533 Unit Note
Min Max Min Max
Address and control input setup time tIS 350 - 250 -ps
Address and control input hold time tIH 475 - 375 -ps
Read preamble tRPRE 0.9 1.1 0.9 1.1 tCK
Read postamble tRPST 0.4 0.6 0.4 0.6 tCK
Auto-Refresh to Active/Auto-Refresh command per iod tRFC 127.5 -127.5 -ns
Row Active to Row Active Delay for 1KB page size tRRD 7.5 - 7.5 - ns
Row Active to Row Active Delay for 2KB page size tRRD 10 - 10 - ns
Four Activate Window for 1KB page size tFAW 37.5 - 37.5 - ns
Four Activate Window for 2KB page size tFAW 50 - 50 - ns
CAS to CAS command delay tCCD 2 2 tCK
Write recovery time tWR 15 -15-ns
Auto Precharge Write Recovery + Precharge Time tDAL tWR + tRP - tWR + tRP - tCK
Write to Read Command Delay tWTR 10 - 7.5 -ns
Internal read to precharge command delay tRTP 7.5 7.5 ns
Exit self refresh to a non-read command tXSNR tRFC + 10 tRFC + 10 ns
Exit self refresh to a read command tXSRD 200 -200 - tCK
Exit precharge power down to any non-read command tXP 2 - 2 - tCK
Exit active power down to read command tXARD 2 2 tCK
Exit active power down to read command
(Slow exit, Lower power) tXARDS 6 - AL 6 - AL tCK
CKE minimum pulse width
(high and low pulse width) tCKE 3 3 tCK
ODT turn-on delay tAOND 2 2 2 2 tCK
ODT turn-on tAON tAC (min) tAC(max)+1 tAC (min) tAC(max)+1 ns
ODT turn-on (Power-Down mode) tAONPD tAC(min)+2 2tCK+tAC(m
ax)+1 tAC(min)+2 2tCK+tAC(m
ax)+1 ns
ODT turn-off delay tAOFD 2.5 2.5 2.5 2.5 tCK
ODT turn-off tAOF tAC (min) tAC (max)+
0.6 tAC (min) tAC (max)+
0.6 ns
ODT turn-off (Power-Down mode) tAOFPD tAC(min)+2 2.5tCK+tA
C(max)+1 tAC(min)+2 2.5tCK+tA
C(max)+1 ns
ODT to power down entry latency tANPD 33
tCK
ODT power down exit latency tAXPD 88
tCK
OCD drive mode output delay tOIT 012012
ns
Minimum time clocks remains ON after CKE
asynchronously drops LOW tDelay tIS + tCK +
tIH tIS + tCK +
tIH ns
Average periodic Refresh Interval tREFI -7.8-7.8us2
tREFI -3.9 -3.9 us 3
Rev. 0.3 / Nov. 2008 22
1240pin DDR2 SDRAM Unbuffered DIMMs
Parameter Symbol DDR2-667 DDR2-800 Unit Note
min max min max
DQ output access time from CK/CK tAC -450 +450 -400 +400 ps
DQS output access time from CK/CK tDQSCK -400 +400 -350 +350 ps
CK high-level width tCH 0.45 0.55 0.45 0.55 tCK
CK low-level width tCL 0.45 0.55 0.45 0.55 tCK
CK half period tHP min(tCL,
tCH) -min(tCL,
tCH) -ps
Clock cycle time, CL=x tCK 3000 8000 2500 ps
DQ and DM inpu t setup time
(differen t ial strobe ) tDS 100 - 50 -ps 1
DQ and DM input hold time
(differen t ial strobe ) tDH 175 - 125 -ps 1
Control & Address input pulse width for each
input tIPW 0.6 - 0.6 -tCK
DQ and DM input pulse width for each input tDIPW 0.35 - 0.35 -tCK
Data-out high-impe dan ce time from CK/CK tHZ - tAC max - tAC max ps
DQS low-impedance time from CK/C K tLZ(DQS) tAC min tAC max tAC min tAC max ps
DQ low-impedance time from CK/CK tLZ(DQ) 2*tAC min tAC max 2*tAC min tAC max ps
DQS-DQ skew for DQS and associated DQ
signals tDQSQ - 240 -200ps
DQ hold skew factor tQHS - 340 -300ps
DQ/DQS output hold time from DQS tQH tHP - tQ HS -tHP - tQHS -ps
First DQS latching transition to associated clock
edge tDQSS - 0.25 + 0.25 - 0.25 + 0.25 tCK
DQS input high pulse width tDQSH 0.35 -0.35 -tCK
DQS input low pulse width tDQSL 0.35 -0.35 -tCK
DQS falling edge to CK setup time tDSS 0.2 -0.2 -tCK
DQS falling edge hold time from CK tDSH 0.2 -0.2 -tCK
Mode register set com mand cycle time tMRD 2 - 2 - tCK
Write preamble tWPRE 0.35 -0.35 -tCK
Write postamble tWPST 0.4 0.6 0.4 0.6 tCK
Address and control input setup time tIS 200 -175-ps
Address and control input hold time tIH 275 -250-ps
Read pr eambl e tRPRE 0.9 1.1 0.9 1.1 tCK
Read postamble tRPST 0.4 0.6 0.4 0.6 tCK
Auto-Refresh to Acti ve/Auto-Refresh command period tRFC 127.5 -127.5 -ns
Active to active command period for 1KB page
size products tRRD 7.5 -7.5-ns
Active to active command period for 2KB page
size products tRRD 10 -10-ns
Four Active Window for 1KB page size products tFAW 37.5 -35 -ns
Four Active Window for 2KB page size products tFAW 50 -45 -ns
Rev. 0.3 / Nov. 2008 23
1240pin DDR2 SDRAM Unbuffered DIMMs
- continued -
Note:
1. For details and notes, please refer to the relevant HYNIX component datasheet (HY5PS1G[8,16]31CFP).
2. 0°C ≤ TCASE ≤ 85°C
3. 85°C ＜ TCASE ≤ 95°C
Parameter Symbol DDR2-667 DDR2-800 Unit Note
min max min max
CAS to CAS command delay tCCD 2 2 tCK
Write recovery time tWR 15 -15-ns
Auto precharge write recovery + precharge time tDAL WR+tRP -WR+tRP -tCK
Internal write to read command delay tWTR 7.5 -7.5-ns
Internal read to precharge command delay tRTP 7.5 7.5 ns
Exit self refresh to a non-read command tXSNR tRFC + 10 tRFC +
10 ns
Exit self refresh to a read command tXSRD 200 -200 -tCK
Exit precharge power down to any non-read
command tXP 2 - 2 - tCK
Exit active power down to read command tXARD 2 2 tCK
Exit active power down to read command
(Slow exit, Lower power) tXARDS 7 - AL 8 - AL tCK
CKE minimum pulse width
(high and low pulse width) tCKE 3 3tCK
ODT turn-on delay tAOND 2 2 2 2 tCK
ODT turn-on tAON tAC (min) tAC (max)
+0.7 tAC (min) tAC (max)
+0.7 ns
ODT turn-on (Power-Down mode) tAONPD tAC(min)+2 2tCK+
tAC(max)+1 tAC (min)
+2 2tCK+
tAC(max)+1 ns
ODT turn-off delay tAOFD 2.5 2.5 2.5 2.5 tCK
ODT turn-off tAOF tAC (min) tAC (max)+
0.6 tAC (min) tAC (max)
+0.6 ns
ODT turn-off (Power-Down mode) tAOFPD tAC (min)
+2 2.5tCK+
tAC(max)+1 tAC (min)
+2 2.5tCK+
tAC(max)+1 ns
ODT to power down entry latency tANPD 3 3 tCK
ODT power down exit latency tAXPD 8 8 tCK
OCD drive mode output delay tOIT 0 12 0 12 ns
Minimum time clocks remains ON after CKE
asynchronously drops LOW tDelay tIS + tCK +
tIH tIS + tCK
+ tIH ns
Average periodic Refresh Interval tREFI - 7.8 - 7.8 us 2
tREFI -3.9 -3.9 us 3
Rev. 0.3 / Nov. 2008 24
1240pin DDR2 SDRAM Unbuffered DIMMs
PACKAGE OUTLINE
64Mx 64 - HMP164U6EFR6C
Front
30.0
4.0±0.1
133.35
63.0
5.175 5.175
55.0
5.0
Back
0.8 ±0.05
1.0
0.20
Detail o f Con tacts A
2.50 ±0.20
D eta il of Con tac ts B
2.50
1.50±0.10
3.80
5.00
3.0 3.0
10.0
17.80
Detail-A Detail-B
N o te ) A ll dim e n s io n s a re in m illimeters un les s othe r w is e s t at e d.
128.95
(2)
2.5
Side
2.7 max
1.27 ± 0.10
(Front)
Rev. 0.3 / Nov. 2008 25
1240pin DDR2 SDRAM Unbuffered DIMMs
PACKAGE OUTLINE
128Mx 64 - HMP112U6EFR8C
Front
30.0
4.0±0.1
133.35
63.0
5.175
5.175
55.0
5.0
Back
0.8
±0.05
1.0
0.20
De ta il of Co n ta c ts A
2.50 ±0.20
De ta il o f C o n ta c ts B
2.50
1.50±0.10
3.80
5.00
3.0
3.0
10.0
17.80
Detail-A
Detail-B
No te) A ll dime ns ions a re in m illime ters u nle ss o therwise state d.
Side
2.7 max
1.27 ± 0.10
(Front)
128.95
(2)
2.5
Rev. 0.3 / Nov. 2008 26
1240pin DDR2 SDRAM Unbuffered DIMMs
PACKAGE OUTLINE
128Mx 72 - HMP112U7EFR8C
Front
30.0
4.0±0.1
133.35
63.0
5.175 5.175
55.0
5.0
Back
0.8
±0.05
1.0
0.20
Detail of Contac ts A
2.50
±0.20
Detail of Contacts B
2.50
1.50±0.10
3.80
5.00
3.0 3.0
10.0
17.80
Detail-A Detail-B
Note) All dimensions are in millimeters unless otherwise stated.
Side
2.7 max
1. 27 ± 0.10
(Front)
128.95
(2)
2.5
Rev. 0.3 / Nov. 2008 27
1240pin DDR2 SDRAM Unbuffered DIMMs
PACKAGE OUTLINE
256Mx 64 - HMP125U6EFR8C
Side
4.00 max.
1.27 ± 0.10
Front
30.0
4.0±0.1
133.35
63.0
5.175 5.175
55.0
5.0
Back
0.8
±0.05
1.0
0.20
Detail of Co n tacts A
2.50 ±0.20
Detail of Con ta cts B
2.50
1.50±0.10
3.80
5.00
3.0 3.0
10.0
17.80
Detail-A
Detail-B
Note) All dimensions are in millimeters unless otherwise stated.
128.95
(2)
2.5
Rev. 0.3 / Nov. 2008 28
1240pin DDR2 SDRAM Unbuffered DIMMs
PACKAGE OUTLINE
256Mx 72 - HMP125U7EFR8C
Side
4.00 max.
1.27 ± 0.10
Front
30.0
4.0±0.1
133.35
63.0
5.175 5.175
55.0
5.0
Back
0.8
±0.05
1.0
0.20
Detail of Con tac ts A
2.50
±0.20
Detail of C o ntacts B
2.50
1.50±0.10
3.80
5.00
3.0 3.0
10.0
17.80
Detail-A
Detail-B
Note) All dimensions are in millimeters unless otherwise stated.
128.95
(2)
2.5
Rev. 0.3 / Nov. 2008 29
1240pin DDR2 SDRAM Unbuffered DIMMs
REVISION HISTORY
Revision History Date
0.1 Initial data sheet released Jun. 2008
0.2 Editorial Correction Sep. 2008
0.3 Corrected Block Diagram Nov. 2008
