07.17502.21 - EAO - Datasheet.Live

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1. Product profile

1.1 General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)

small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4032PT.

1.2 Features

Low collector-emitter saturation voltage VCEsat

Optimized switching time

High collector current capability IC and ICM

High collector current gain (hFE) at high IC

High energy efficiency due to less heat generation

AEC-Q101 qualified

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

DC-to-DC conversion

Battery-driven devices

Power management

Charging circuits

1.4 Quick reference data

[1] Pulse test: tp≤300 μs; δ≤0.02.

PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

Rev. 01 — 18 December 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 30 V

ICcollector current - - 2.6 A

ICM peak collector current single pulse;

tp≤1ms --5A

RCEsat collector-emitter

saturation resistance IC=2.5A;

IB=0.25A [1] -76105mΩ

Product data sheet Rev. 01 — 18 December 2009 2 of 14

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1base

2emitter

3 collector

sym02

Table 3. Ordering information

Type number Package

Name Description Version

PBSS4032NT - plastic surface-mounted package; 3 leads SOT23

Table 4. Marking codes

Type number Marking code[1]

PBSS4032NT *BM

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 30 V

VCEO collector-emitter voltage open base - 30 V

VEBO emitter-base voltage open collector - 5 V

ICcollector current - 2.6 A

ICM peak collector current single pulse;

tp≤1ms -5A

IBbase current - 0.5 A

Product data sheet Rev. 01 — 18 December 2009 3 of 14

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Ptot total power dissipation Tamb ≤25 °C[1] - 390 mW

[2] - 660 mW

[3] -1100mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 1 cm2

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Tamb (°C)

−75 17512525 75−25

006aab954

0.5

1.0

1.5

Ptot

(W)

(1)

(3)

(2)

Product data sheet Rev. 01 — 18 December 2009 4 of 14

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] --320K/W

[2] --190K/W

[3] --115K/W

Rth(j-sp) thermal resistance from

junction to solder point --62K/W

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junctio n to ambient as a function of pulse duration; typical valu es

006aab955

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

Product data sheet Rev. 01 — 18 December 2009 5 of 14

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

FR4 PCB, mounting pad for collector 1 cm2

Fig 3. Transient thermal impedance from junctio n to ambient as a function of pulse duration; typical valu es

Ceramic PCB, Al2O3, standard footprint

Fig 4. Transient thermal impedance from junctio n to ambient as a function of pulse duration; typical valu es

006aab956

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

006aab957

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

Product data sheet Rev. 01 — 18 December 2009 6 of 14

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.02.

Table 7. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =30V; I

E= 0 A - - 100 nA

VCB =30V; I

E=0A;

Tj=150°C--50μA

ICES collector-emitter

cut-off current VCE =24V; V

BE = 0 V - - 100 nA

IEBO emitter-base cut-off

current VEB =5V; I

C= 0 A - - 100 nA

hFE DC current gain VCE =2V; I

C= 500 mA 300 500 -

VCE =2V; I

C=1A [1] 300 500 -

VCE =2V; I

C=2A [1] 200 370 -

VCE =2V; I

C=4A [1] 100 150 -

VCEsat collector-emitter

saturation voltage IC= 500 mA; IB= 50 mA - 80 120 mV

IC=1A; I

B=50mA [1] - 125 175 mV

IC=1A; I

B=10mA [1] - 175 245 mV

IC=2.5A; I

B=250mA [1] - 200 280 mV

IC=3A; I

B=300mA [1] - 230 320 mV

RCEsat collector-emitter

saturation resistance IC=2.5A; I

B=250mA [1] -76105mΩ

VBEsat base-emitter

saturation voltage IC=1A; I

B=100mA [1] - 0.79 0.9 V

IC=2.5A; I

B=250mA [1] - 0.88 0.95 V

VBEon base-emitter turn-on

voltage VCE =2V; I

C= 2 A - 0.79 0.85 V

tddelay time VCC =12.5V; I

C=1A;

IBon =0.05A;

IBoff =−0.05 A

-15-ns

trrise time - 20 - ns

ton turn-on time - 35 - ns

tsstorage time - 135 - ns

tffall time - 60 - ns

toff turn-off time - 195 - ns

fTtransition frequency VCE =10V;

IC= 100 mA;

f=100MHz

- 180 - MHz

Cccollector capacitance VCB =10V; I

E=i

e=0A;

f=1MHz -28-pF

Product data sheet Rev. 01 — 18 December 2009 7 of 14

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

VCE =2V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

Fig 5. DC current gain as a function of collector

current; typical values Fig 6. Collector current as a fun ction of

collector-emitter voltage; typical values

VCE =2V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

IC/IB=20

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 7. Base-emitter voltage as a function of collector

current; typical values Fig 8. Base-emitter saturation voltage as a function

of collector current; typical values

006aab958

400

800

1200

hFE

IC (mA)

10−1104

103

110

(1)

(3)

(2)

VCE (V)

0.0 5.04.02.0 3.01.0

006aab959

2.0

4.0

6.0

(A)

0.0

IB (mA) = 50

40 35

30 25

006aab960

0.6

1.0

1.4

VBE

(V)

0.2

IC (mA)

10−1104

103

110

(1)

(3)

(2)

006aab961

0.6

1.0

1.4

VBEsat

(V)

0.2

IC (mA)

10−1104

103

110

(1)

(3)

(2)

Product data sheet Rev. 01 — 18 December 2009 8 of 14

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 9. Collector-emitter saturation voltage as a

function of collector current; typical values Fig 10. Collector-emitter satu ra tio n vo ltag e as a

function of collector current; typical values

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 11. Collector-emitter saturation re sistance as a

function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a

function of collector current; typical values

006aab962

IC (mA)

10−1104

103

110

10−1

VCEsat

(V)

10−2

(1)

(3)

(2)

006aab963

IC (mA)

10−1104

103

110

10−1

VCEsat

(V)

10−2

(1)

(3)

(2)

IC (mA)

10−1104

103

110

006aab964

10−1

102

103

RCEsat

(Ω)

10−2

(3)

(1)

(2)

IC (mA)

10−1104

103

110

006aab965

10−1

102

103

RCEsat

(Ω)

10−2

(3)

(1)

(2)

Product data sheet Rev. 01 — 18 December 2009 9 of 14

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

Fig 13. BISS transistor switching time definition

Fig 14. Test circuit for switching tim e s

006aaa003

IBon (100 %)

input pulse

(idealized waveform)

IBoff

90 %

10 %

IC (100 %)

ton

90 %

10 %

output pulse

(idealized waveform)

toff

DUT

mlb826

(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Product data sheet Rev. 01 — 18 December 2009 10 of 14

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 15. Package outline SOT23 (TO-236AB)

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

PBSS4032NT SOT23 4 mm pitch, 8 mm tape and reel -215 -235

Product data sheet Rev. 01 — 18 December 2009 11 of 14

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

11. Soldering

Fig 16. Reflow soldering footprin t SOT23 (TO-236AB)

Fig 17. Wave soldering footprint SOT23 (TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 01 — 18 December 2009 12 of 14

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBSS4032NT_1 20091218 Product data sheet - -

Product data sheet Rev. 01 — 18 December 2009 13 of 14

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the shor t data sheet, the

full data sheet shall pre va il.

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General — In formation in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give an y represent ations or

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information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failur e or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permane nt

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as publish ed

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limit ation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Char acteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specif ication for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors PBSS4032NT

30 V, 2.6 A NPN low VCEsat (BISS) transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 18 December 2009

Document identifier: PB SS4 032 NT_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14