IRF4905 - International Rectifier

IRF4905

HEXFET® Power MOSFET

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power

dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-

220 contribute to its wide acceptance throughout the

industry.

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -74

ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -52 A

IDM Pulsed Drain Current -260

PD @TC = 25°C Power Dissipation 200 W

Linear Derating Factor 1.3 W/°C

VGS Gate-to-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy930 mJ

IAR Avalanche Current-38 A

EAR Repetitive Avalanche Energy20 mJ

dv/dt Peak Diode Recovery dv/dt -5.0 V/ns

TJOperating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm)

Absolute Maximum Ratings

Parameter Typ. Max. Units

RθJC Junction-to-Case  0.75

RθCS Case-to-Sink, Flat, Greased Surface 0.50  °C/W

RθJA Junction-to-Ambient  62

Thermal Resistance

VDSS = -55V

RDS(on) = 0.02Ω

ID = -74A

T

O

-22

0

AB

lAdvanced Process Technology

lUltra Low On-Resistance

lDynamic dv/dt Rating

l175°C Operating Temperature

lFast Switching

lP-Channel

lFully Avalanche Rated

Description

05/24/07

S

D

G

PD - 91280D

IRF4905

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode)   showing the

ISM Pulsed Source Current integral reverse

(Body Diode)   p-n junction diode.

VSD Diode Forward Voltage   -1.6 V TJ = 25°C, IS = -38A, VGS = 0V 

trr Reverse Recovery Time  89 130 ns TJ = 25°C, IF = -38A

Qrr Reverse Recovery Charge  230 350 nC di/dt = -100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -55   V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient  -0.05  V/°C Reference to 25°C, ID = -1mA

RDS(on) Static Drain-to-Source On-Resistance   0.02 ΩVGS = -10V, ID = -38A 

VGS(th) Gate Threshold Voltage -2.0  -4.0 V VDS = VGS, ID = -250µA

gfs Forward Transconductance 21   S VDS = -25V, ID = -38A

  -25 µA VDS = -55V, VGS = 0V

  -250 VDS = -44V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage   100 VGS = 20V

Gate-to-Source Reverse Leakage   -100 nA VGS = -20V

QgTotal Gate Charge   180 ID = -38A

Qgs Gate-to-Source Charge   32 nC VDS = -44V

Qgd Gate-to-Drain ("Miller") Charge   86 VGS = -10V, See Fig. 6 and 13 

td(on) Turn-On Delay Time  18  VDD = -28V

trRise Time  99  ID = -38A

td(off) Turn-Off Delay Time  61  RG = 2.5Ω

tfFall Time  96  RD = 0.72Ω, See Fig. 10 

Between lead,

  6mm (0.25in.)

from package

and center of die contact

Ciss Input Capacitance  3400  VGS = 0V

Coss Output Capacitance  1400  pF VDS = -25V

Crss Reverse Transfer Capacitance  640   = 1.0MHz, See Fig. 5

nH

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

LDInternal Drain Inductance

LSInternal Source Inductance  

IGSS

ns

4.5

7.5

IDSS Drain-to-Source Leakage Current

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Notes:

 Starting TJ = 25°C, L = 1.3mH

RG = 25Ω, IAS = -38A. (See Figure 12)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

S

D

G

Source-Drain Ratings and Characteristics

A

S

D

G

-74

-260

IRF4905

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

1000

0.1 1 10 100

D

DS

20µs PULSE WIDTH

T = 25°C

c

A

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

VGS

TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOT TOM - 4. 5V

-4.5V

1

10

100

1000

0.1 1 10 100

D

DS

A

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

VGS

TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

-4.5V

20µs PULSE WIDTH

T = 175°C

C

1

10

100

1000

45678910

T = 25°C

J

GS

D

A

-I , Drain-to-Source Current (A)

-V , Gate-to-Source Voltage (V)

V = -25V

20µs PULSE WIDTH

DS

T = 175°C

J

0.0

0.5

1.0

1.5

2.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

J

T , Junction Temperature (°C)

R , Drain-to-Source On Resistance

DS(on)

(Normalized)

A

V = -10V

GS

I = -64A

D

Fig 2. Typical Output Characteristics

IRF4905

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

1000

2000

3000

4000

5000

6000

7000

1 10 100

C, Capacitance (pF)

A

DS

-V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

4

8

12

16

20

0 40 80 120 160 200

G

GS

A

-V , Gate-to-Source Voltage (V)

Q , Total Gate Charge (nC)

FOR TEST CIRCUIT

SEE FIGURE 13

I = -38A

V = -44V

V = -28V

D

DS

1

10

100

1000

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

T = 25°C

J

V = 0V

GS

SD

A

-I , Reverse Drain Current (A)

-V , Source-to-Drain Voltage (V)

T = 175°C

J

1

10

100

1000

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10ms

A

-I , Drain Current (A)

-V , Drain-to-Source Voltage (V)

DS

D

100µs

1ms

T = 25°C

T = 175°C

Single Pulse

C

J

IRF4905

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

VDS

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

VDD

RG

D.U.T.

+

-

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

25 50 75 100 125 150 175

0

20

40

60

80

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRF4905

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Q

G

Q

GS

Q

GD

V

G

Charge

-10V

D.U.T. VDS

ID

IG

-3mA

VGS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V

(

BR

)

DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

V

DD

DRIVER

A

15V

-20V

0

500

1000

1500

2000

2500

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

I

TOP -16A

-27A

BOTTOM -38A

D

IRF4905

Peak Diode Recovery dv/dt Test Circuit

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D = P. W .

Period

+

-

+

-







RG

VDD

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T*Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 14. For P-Channel HEXFETS

IRF4905

TO-220AB Part Marking Information

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

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Data and specifications subject to change without notice.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 05/07

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/