PD-94047D IRHNJ597130 JANSR2N7545U3 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/712 R5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ597130 100 kRads(Si) 0.205 -12.5A JANSR2N7545U3 IRHNJ593130 300 kRads(Si) 0.205 -12.5A JANSF2N7545U3 SMD-0.5 Description Features IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 80 (MeV/(mg/cm2). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Electrically Isolated Ceramic Package Light Weight Surface Mount ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Parameter Symbol Value Units ID1 @ VGS = -12V, TC = 25C Continuous Drain Current -12.5 ID2 @ VGS = -12V, TC = 100C Continuous Drain Current -8.0 IDM @ TC = 25C Pulsed Drain Current -50 PD @ TC = 25C Maximum Power Dissipation 75 W Linear Derating Factor 0.6 W/C VGS Gate-to-Source Voltage 20 V EAS Single Pulse Avalanche Energy 96 mJ IAR Avalanche Current -12.5 A EAR Repetitive Avalanche Energy 7.5 mJ dv/dt Peak Diode Recovery dv/dt -6.2 V/ns TJ TSTG Operating Junction and Storage Temperature Range Package Mounting Surface Temperature Weight -55 to + 150 A C 300 (for 5s) 1.0 (Typical) g For Footnotes, refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2019-02-25 IRHNJ597130 JANSR2N7545U3 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Symbol Min. Typ. Max. Units BVDSS BVDSS/TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance -100 --- --- --- -0.12 --- --- --- 0.205 VGS(th) Gfs IDSS Gate Threshold Voltage Forward Transconductance QG QGS QGD td(on) tr td(off) tf Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time -2.0 6.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- -4.0 --- -10 -25 -100 100 45 16 11 25 55 33 103 Ls +LD Total Inductance --- 4.0 --- Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1372 326 20 --- --- --- IGSS Zero Gate Voltage Drain Current Test Conditions V V/C VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID2 = -8.0A V S VDS = VGS, ID = -1.0mA VDS = -15V, ID2 = -8.0A VDS = -80V, VGS = 0V VDS = -80V,VGS = 0V,TJ =125C VGS = -20V VGS = 20V ID1 = -12.5A VDS = -50V VGS = -12V VDD = -50V ID1 = -12.5A RG = 7.5 VGS = -12V A nA nC ns nH Measured from center of Drain pad to center of Source pad pF VGS = 0V VDS = -25V = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Symbol Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) --- --- -12.5 ISM Pulsed Source Current (Body Diode) --- --- -50 VSD Diode Forward Voltage --- --- -5.0 V TJ=25C, IS=-12.5A, VGS=0V trr Reverse Recovery Time --- --- 191 ns TJ=25C, IF=-12.5A,VDD 50V Qrr Reverse Recovery Charge --- --- 778 nC di/dt = -100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A Thermal Resistance Symbol Min. Typ. Max. RJC Junction-to-Case Parameter --- --- 1.67 RJ-PCB Junction-to-PC Board (Soldered to 2" sq copper clad board) --- 6.9 --- Units C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, L = 1.2mH, Peak IL = -12.5A, VGS = -12V ISD -12.5A, di/dt -320A/s, VDD -100V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A. Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A. 2 International Rectifier HiRel Products, Inc. 2019-02-25 IRHNJ597130 JANSR2N7545U3 Radiation Characteristics Pre-Irradiation IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Symbol Parameter 100 kRads (Si)1 300 kRads (Si)2 Min. Max. Min. Max. Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -100 --- -100 --- V VGS = 0V, ID = -1.0mA VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 V VDS = VGS, ID = -1.0mA IGSS Gate-to-Source Leakage Forward --- -100 --- -100 nA VGS = -20V IGSS Gate-to-Source Leakage Reverse --- 100 --- 100 nA VGS = 20V IDSS Zero Gate Voltage Drain Current --- -10 --- -10 A VDS = -80V, VGS = 0V RDS(on) Static Drain-to-Source On-State Resistance (TO-3) --- 0.205 --- 0.205 VGS = -12V, ID2 = -8.0A RDS(on) Static Drain-to-Source On-State Resistance (SMD-0.5) --- 0.205 --- 0.205 VGS = -12V, ID2 = -8.0A VSD Diode Forward Voltage --- -5.0 --- -5.0 V VGS = 0V, IS = -12.5A 1. Part numbers IRHNJ597130, JANSR2N7545U3 2. Part numbers IRHNJ593130, JANSF2N7545U3 IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area VDS (V) Energy Range (MeV/(mg/cm2)) (MeV) (m) 38 5% 270 7.5% 35 7.5% -100 -100 -100 -100 -100 61 5% 330 7.5% 30 7.5% -100 -100 -100 -100 -25 84 5% 350 7.5% 28 7.5% -100 -100 -100 -30 --- Bias VDS (V) LET @ VGS = 0V @ VGS =5V @ VGS =10V @ VGS =15V @ VGS =20V -120 -100 -80 -60 -40 -20 0 LET=38 5% LET=61 5% LET=84 5% 0 5 10 15 20 Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For Footnotes, refer to the page 2. 3 International Rectifier HiRel Products, Inc. 2019-02-25 IRHNJ597130 JANSR2N7545U3 Pre-Irradiation Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage International Rectifier HiRel Products, Inc. 2019-02-25 IRHNJ597130 JANSR2N7545U3 Pre-Irradiation Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage Fig 10. Maximum Avalanche Energy Vs. Drain Current Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJC) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.01 0.00001 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1/ t 2 2. Peak T J = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 International Rectifier HiRel Products, Inc. 2019-02-25 IRHNJ597130 JANSR2N7545U3 Pre-Irradiation Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms -12V Fig 13a. Basic Gate Charge Waveform Fig 14a. Switching Time Test Circuit 6 Fig 13b. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms International Rectifier HiRel Products, Inc. 2019-02-25 IRHNJ597130 JANSR2N7545U3 Pre-Irradiation Case Outline and Dimensions -- SMD-0.5 PAD 1 = 2 = 3 = ASSIGNMENTS DRAIN GATE SOURCE www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776 San Jose, California 95134, USA Tel: +1 (408) 434-5000 Data and specifications subject to change without notice. 7 International Rectifier HiRel Products, Inc. 2019-02-25 IRHNJ597130 JANSR2N7545U3 Pre-Irradiation IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's product and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer's technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to (www.infineon.com/hirel). WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 8 International Rectifier HiRel Products, Inc. 2019-02-25