SOP8501
No.8007-1/5
Features
•High breakdown voltage. (VCEO≥400V)
•Excellent hFE linearlity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions PNP NPN Unit
Collector-to-Base Voltage VCBO --400 400 V
Collector-to-Emitter Voltage VCEO --400 400 V
Emitter-to-Base Voltage VEBO --5 5 V
Collector Current IC--1 0.2 A
Collector Current (Pulse) ICP --2 0.4 A
Collector Dissipation PC
Mounted on a ceramic board (2000mm
2
✕0.8mm) 1unit
1.3 W
PT
Mounted on a ceramic board (2000mm
2
✕0.8mm) 1unit
1.6 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
[PNP]
Collector Cutoff Current ICBO VCB=--300V, IE=0 --1.0 µA
Emitter Cutoff Current IEBO VEB=--4V, IC=0 --1.0 µA
DC Current Gain hFE VCE=--10V, IC=--100mA 40 200
Gain-Bandwidth Product fTVCE=--10V, IC=--50mA 50 MHz
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--200mA, IB=--20mA --1.0 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=--200mA, IB=--20mA --1.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10µA, IE=0 --400 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞--400 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10µA, IC=0 --5 V
Output Capacitance Cob VCB=--30V, f=1MHz 12 pF
Turn-ON Time ton See specified Test Circuit. 0.25 µs
Storage T ime tstg See specified Test Circuit. 3.0 µs
Fall T ime tfSee specified Test Circuit 0.3 µs
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8007
D2004CB TS IM TB-00000396
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SOP8501 PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
SOP8501
No.8007-2/5
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
[NPN]
Collector Cutoff Current ICBO VCB=300V, IE=0 1.0 µA
Emitter Cutoff Current IEBO VEB=4V, IC=0 1.0 µA
DC Current Gain hFE VCE=10V, IC=50mA 60 200
Gain-Bandwidth Product fTVCE=30V, IC=10mA 70 MHz
Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.6 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA 1.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 400 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞400 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 5 V
Output Capacitance Cob VCB=30V, f=1MHz 4 pF
Reverse Transfer Capacitance Cre VCB=30V, f=1MHz 3 pF
Turn-ON Time ton See specified Test Circuit. 0.25 µs
T urn-OFF Time toff See specified Test Circuit. 5.0 µs
Package Dimensions Electrical Connection
unit : mm
2233
Switching Time Test Circuit
[PNP] [NPN]
87 65
12 34
1 : Emitter1
2 : Base1
3 : Emitter2
4 : Base2
5 : Collector2
6 : Collector2
7 : Collector1
8 : Collector1
Top view
1 : Emitter1
2 : Base1
3 : Emitter2
4 : Base2
5 : Collector2
6 : Collector2
7 : Collector1
8 : Collector1
SANYO : SOP8
14
58
4.4
0.3
6.0
0.2
5.0
0.595 1.27
1.5
0.1 1.8max
0.43
VR
RL
VCC= --150V
VBE=5V
10IB1= --10IB2=IC= --200mA
IC=200m RL=750Ω, RB=50Ω
++
INPUT OUTPUT
RB
100µF 470µF
PW=20µs
IB1
D.C.≤1%
IB2
50Ω
VR
RL
VCC=150V
VBE= --1V
10IB1= --10IB2=IC=50mA
IC=50m RL=3kΩ, RB=200Ω
++
INPUT OUTPUT
RB
100µF 470µF
PW=20µs
IB1
D.C.≤1%
IB2
50Ω
SOP8501
No.8007-3/5
VCE= --10V
Ta=75°C
--25°C
--1.0
--0.8
--0.6
--0.2
--0.4
00 --0.2 --0.4 --0.6 --0.8 --1.4--1.2--1.0
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
ITR04587
[PNP]
25°C
20
00 0.2 0.4 0.6 1.21.00.8 1.4
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
ITR04446
120
40
60
80
100
VCE=10V
Ta=70
°
C
25°
C
--30
°C
[NPN]
--10 --100
23 535 235777 --1000
--1.0
7
5
3
3
2
2
7
5
--0.1
Ta= --25°C
25°C
75°C
VCE(sat) -- IC
Collector Current, IC -- mA
ITR04597
IC / IB=10
VBE(sat) -- IC
Collector Current, IC -- mA
--1.0
--0.1
--10 --100 --1000
Ta= --25
°
C
75°C
3
2
3
2
7
5
7
53 5 23 57 23 57723
IC / IB=10
ITR04599
25°C
[PNP]
[PNP]
[NPN]
[NPN]
ITR04452
VCE(sat) -- IC
Collector Current, IC -- mA
7
5
2
3
2
7
5
5
3
1.0
0.1
2735 272357
1.0 10 100
ITR04450
IC / IB=10
Ta=70°C
25°C, --30°C
VBE(sat) -- IC
Collector Current, IC -- mA
3
5
5
3
2
7
7
1.0
2735 372 2357
1.0 10 100
IC / IB=10
70°C
25°C
Ta= --30°C
Ta=75°C
--25°C
hFE -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
VCE= --10V
ITR04589
100
7
7
5
3
5
3
2
3
2
10
7775 --1000--10 332532325
--100
[PNP]
25°C
5
100
10
7
5
7
3
2
3
2
5
1.0 10 100
hFE -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
ITR04448
Ta=70°C
25°C
--30
°C
23 577723 352
VCE=10V
[NPN]
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
SOP8501
No.8007-4/5
VCE= --10V
fT -- IC
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- mA
3
100
10
2
7
5
7
5
3
2
7532 25353
--10 7--100 ITR04591
[PNP]
[NPN]
Switching Time, SW Time -- µs
5
0.1
1.0
7
10
2
3
5
7
3
7
2
5
27357 2 535
10 100
3
SW Time -- IC
Collector Current, IC -- mA
ITR04454
ton
tf
tstg
VCC= --150V
10IB1= --10IB2=IC
2232357
--10 35 57--100 7--1000
SW Time -- IC
Switching Time, SW Time -- µs
Collector Current, IC -- mA
2
3
7
7
5
2
3
5
10
7
1.0
0.1
ITR04595
VCC= --150V
10IB1= --10IB2=IC
tstg
ton
tf
[PNP]
[NPN][PNP]
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
3
2
3
2
7
5
7
5
3
10
100
--1.0 37732--10 227--100
55
ITR04593
f=1MHz
[PNP]
[PNP / NPN]
Total Dissipation, PT -- W
PT -- Ta
Ambient Temperature, Ta -- °C
[PNP / NPN]
Collector Dissipation, PC -- W
PC -- Ta
Ambient Temperature, Ta -- °C
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
A S O
0
1.8
020 6040 80 120100 160140
IT07328
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
3
--
1.0
--
0.1
--
0.01
7
5
3
2
7
5
2
7
5
3
2
3
2
7
--
0.1
--
1.0
--
10
23 5723 5 7
--
100
23 5 723 5
0 20 40 60 80 100 120 140 160
0.6
0.4
0.2
0
1.2
1.0
0.8
1.3
1.4
1.6
--
0.001
DC operation
ICP= --2A
IC= --1A
500µs
IT07327
IT07325
10ms
1ms
100ms
3
0.1
0.01
7
5
3
2
7
5
2
7
5
3
2
7
0.1 1.0 10
23 5723 5 7
100
23 5 723 5
0.001
DC operation
ICP=0.4A
IC=0.2A
500µs
IT07326
10ms
1ms
100ms
Tc=25°C
Single pulse
Mounted on a ceramic board (2000mm
2
✕0.8mm) 1unit
Tc=25°C
Single pulse
Mounted on a ceramic board (2000mm
2
✕0.8mm) 1unit
Mounted on a ceramic board (2000mm
2
✕
0.8mm) 1unit
Mounted on a ceramic board (2000mm
2
✕
0.8mm) 1unit
SOP8501
No.8007-5/5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2004. Specifications and information herein are subject
to change without notice.
PS
