FAST RECOVERY DIODE ARF674
Repetitive voltage up to 4500 V
Mean forward current 945 A
Surge current 15 kA
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Symbol Characteristic Conditions Tj
[°C] Value Unit
BLOCKING
VRRM Repetitive peak reverse voltage 125 4500 V
VRSM Non-repetitive peak reverse voltage 125 4600 V
IRRM Repetitive peak reverse current V=VRRM 125 80 mA
CONDUCTING
IF (AV) Mean forward current 180° sin ,50 Hz, Th=55°C, double side cooled 945 A
IF (AV) Mean forward current 180° square,50 Hz,Th=55°C,double side cooled 940 A
IFSM Surge forward current Sine wave, 10 ms 125 15 kA
I² t I² t
reapplied reverse voltage up to 50% VRSM
1125 x1E3 A²s
VFM Forward voltage Forward current = 1570 A 25 3 V
VF(TO) Threshold voltage 125 1.90 V
rFForward slope resistance 125 0.700 mohm
SWITCHING
t rr Reverse recovery time I F = 500 A 8 µs
Q rr Reverse recovery charge di/dt= 30 A/µs 125 600 µC
I rr Peak reverse recovery current
VR = 100 V
150 A
s Softness (s-factor), min 0.4
VFR Peak forward recovery di/dt= 400 A/µs 42 V
MOUNTING
Rth(j-h) Thermal impedance Junction to heatsink, double side cooled 21 °C/kW
TjOperating junction temperature -30 / 125 °C
F Mounting force 22.0 / 24.5 kN
Mass 520 g
ORDERING INFORMATION : ARF674 S 45
standard specification VRRM/100
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
ARF674 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
SINE WAVE
DC
DC
180°
120°
90°
60°
30°
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 1000 1200 1400
Mean Forward Current [A]
Power Dissipation [W]
180°
120°
90°
60°
30°
0
500
1000
1500
2000
2500
3000
3500
0 200 400 600 800 1000 1200 1400
Mean Forward Current [A]
Power Dissipation [W]
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
ARF674 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 03
SWITCHING CHARACTERISTICS
25% di Irr
REVERSE RECOVERY CHARGE
Tj = 125 °C
0
500
1000
1500
2000
2500
3000
3500
0 100 200 300 400
di/dt [A/µs]
Qrr [µC]
250 A
500 A
1000 A
REVERSE RECOVERY CURRENT
Tj = 125 °C
0
200
400
600
800
1000
1200
0 100 200 300 400
di/dt [A/µs]
Irr [A]
250 A
500 A
1000 A
FORWARD RECOVERY VOLTAGE
0
10
20
30
40
50
60
70
80
0 200 400 600 800 1000 1200
di/dt [A/µs]
VFR [V]
Tj = 125 °C
Tj = 25 °C
IF
VFR
VF
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
ta
ta = Irr / (di/dt) tb = trr - ta
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr Vr
tb
IFd i/d t
ARF674 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 03
Distributed by
FORWARD CHARACTERISTIC
Tj = 125 °C
0
500
1000
1500
2000
2500
3000
1 1.5 2 2.5 3 3.5 4
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
5.0
10.0
15.0
20.0
25.0
0.001 0.01 0.1 1 10 100
t[s]
Zth j-h [°C/kW]
SURGE CHARACTERISTIC
Tj = 125 °C
0
2
4
6
8
10
12
14
16
1 10 100
n° cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement POSEICO SPA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
