RBO40-40T - STMicroelectronics

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RBO40-40G/T

REVERSED BATTERY AND

OVERVOLTAGE PROTECTION

September 2005 - Ed:6

Application Specific Discretes

A.S.D.™

D2PAK

RBO40-40G

TO220-AB

RBO40-40T

FUNCTIONAL DIAGRAM

■PROTECTION AGAINST “LOAD DUMP” PULSE

■40A DIODE TO GUARD AGAINST BATTERY

REVERSAL

■MONOLITHIC STRUCTURE FOR GREATER

RELIABILITY

■BREAKDOWN VOLTAGE : 24 V min.

■CLAMPING VOLTAGE : ± 40 V max.

■COMPLIANT WITH ISO / DTR 7637

FEATURES

Designed to protect against battery reversal and

load dump overvoltages in automotive applica-

tions, this monolithic component offers multiple

functions in the same package :

D1 : reversed battery protection

T1 : clamping against negative overvoltages

T2 : Transil function against “load dump” effect.

DESCRIPTION

TM : TRANSIL and ASD are trademarks of STMicroelectronics.

RBO40-40G / RBO40-40T

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Symbol Parameter Value Unit

IFSM Non repetitive surge peak forward current

(Diode D1)

tp=10ms 120 A

IFDC forward current (Diode D1) Tc=75°C 40 A

VPP Peak load dump voltage (see note 1and 2)

5 pulses (1 minute between each pulse)

80 V

PPP Peak pulse power between Input and Output

(Transil T1) Tj initial = 25°C

10/1000 µs 1500 W

Tstg/Tj Storage and operating junction temperature range - 40 to + 150 °C

TLMaximum lead temperature for soldering during 10 s

at 4.5mm from case for TO220-AB

260 °C

Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit.

Note 2 : see Load Dump curves.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

Rth (j-c) Junction to case RBO40-40G

RBO40-40T

1.0

°C/W

Rth (j-a) Junction to ambient RBO40-40T 60 °C/W

THERMAL RESISTANCE

T1 2

VCL31 VRM31

VF13 V13

I13

IRM31

IR31

Ipp31

VBR31

Ipp32

VRM32 VBR32 VCL32

V32

I32

IR32

IRM32

Ex :VF13 . between Pin 1 and Pin 3 VBR 32 . between Pin 3 and Pin 2

RBO40-40G / RBO40-40T

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Symbol Test Conditions Value Unit

Min. Typ. Max.

VF13 IF=40A 1.9 V

VF13 IF= 20A 1.45 V

VF13 IF=1A 1V

VF13 IF= 100 mA 0.95 V

C13 F = 1MHz VR=0V 3000 pF

ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < Tamb < + 85°C)

Symbol Parameter

VRM31/VRM32 Stand-off voltage Transil T1 / Transil T2.

VBR31/VBR32 Breakdown voltage Transil T1 / Transil T2.

IR31/IR32 Leakage current Transil T1 / Transil T2.

VCL31/VCL32 Clamping voltage Transil T1 / Transil T2.

VF13 Forward voltage drop Diode D1.

IPP Peak pulse current.

αTTemperature coefficient of VBR.

C31/C32 Capacitance Transil T1 / Transil T2.

C13 Capacitance of Diode D1

Symbol Test Conditions Value Unit

Min. Typ. Max.

VBR 31 IR=1mA 22 35 V

VBR 31 IR= 1 mA, Tamb = 25°C 24 32 V

IRM 31 VRM =20V 100 µA

IRM 31 VRM =20V,T

amb = 25°C 10 µA

VCL 31 IPP = 37.5A, Tj initial = 25°C 10/1000µs 40 V

αTTemperature coefficient of VBR 910

-4/°C

C31 F = 1MHz VR=0V 3000 pF

ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < Tamb < + 85°C)

Symbol Test Conditions Value Unit

Min. Typ. Max.

VBR 32 IR=1mA 22 35 V

VBR 32 IR= 1 mA, Tamb = 25°C 24 32 V

IRM 32 VRM =20V 100 µA

IRM 32 VRM =20V,T

amb = 25°C 10 µA

VCL 32 IPP = 20 A (note 1) 40 V

αTTemperature coefficient of VBR 910

-4/°C

C32 F = 1MHz VR=0V 8000 pF

Note 1 : One pulse, see pulse definition in load dump test generator circuit.

ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < Tamb < + 85°C)

RBO40-40G / RBO40-40T

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PRODUCT DESCRIPTION

The RBO has 3 functions integrated on the same

chip.

D1 : “Diode function” in order to protect against

reversed battery operation.

T2 : “Transil function” in order to protect against

positive surge generated by electric systems

(ignition, relay. ...).

T1 : Protection for motor drive application

(See below).

BASIC APPLICATION

* The monolithic multi-function protection

(RBO) has been developed to protect sen-

sitive semiconductors in car electronic

modules against both overvoltage and

battery reverse.

* In addition, the RBO circuit prevents

overvoltages generated by the module from

affecting the car supply network.

MOTOR DRIVER APPLICATION

BATTERY

RBO

DEVICE MOTOR CONTROL

MOTOR

Filter

In this application, one half of the motor drive circuit is supplied through the “RBO” and is thus protected

as per its basic function application.

The second part is connected directly to the “car supply network” and is protected as follows :

- For positive surges : T2 (clamping phase) and D1 in forward-biased.

- For negative surges : T1 (clamping phase) and T2 in forward-biased.

RBO40-40G / RBO40-40T

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- Input (1) : Pin 1

- Output (3) : Pin 3

- Gnd (2) : Connected to base Tab

Marking : Logo, date code, RBO40-40G

PINOUT configuration in D2PAK :

TAB

(TAB)

- Input (1) : Pin 1

- Output (3) : Pin 3

- GND (2) : Connected to base Tab

Marking : Logo, date code, RBO40-40T

PINOUT configuration in TO220AB :

RBO40-40G / RBO40-40T

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LOAD DUMP TEST GENERATOR CIRCUIT (SCHAFFNER NSG 506 C). Issued from ISO / DTR 7637.

U(V) t

Vbat

90%

10%

offset

10% / 13.5V

Open circuit (voltage curve)

(pulse test n°5)

Corresponding current wave with D.U.T.

Ipp

Ipp/2

tp = 40ms t

Impulse N°5

Vs (V) 66.5

Vbat (V) 13.5

Ri (Ω)2

t (ms) 200 (*)

tr (ms) <10

Number 5

60s between each pulse

(*) Generator setting

1) With open circuit (generator is in open circuit):

- calibrate Vs

2) With short circuit (generator is in short circuit):

- calibrate Ri (Ri = 2Ω)

3) With D.U.T.

- calibrate tp (tp = 40ms @ Ipp/2)

typ. Vpp

VBat

20ms/div.

10.0V/div.

Typical Voltage curve (open circuit)

typ. VCL

Ipp

20ms/div.

5.0V/div.

20ms/div.

3A/div.

Typical Voltage and Current curve with D.U.T.

CALIBRATION METHOD FOR SCHAFFNER NSG 506 C

RBO40-40G / RBO40-40T

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12 5 10 20 50 100

0.1

0.2

0.5

1.0

2.0

5.0

10.0

Transil T1

Transil T2

(ms)

Ppp(kW)

Fig. 1 : Peak pulse power versus exponential

pulse duration (Tj initial = 85°C).

V (V)CL

12 5 10 20 50 100 200 500

tp=1ms

tp = 20µs

Ipp(A)

Fig. 2-2 : Clamping voltage versus peak pulse

current (Tj initial = 85°C).

Exponential waveform tp = 1 ms and tp = 20 µs

(TRANSIL T1).

0.1 0.2 0.5 1 2 5 10 20 50 100

30.0

32.5

35.0

37.5

40.0

42.5

45.0

tp = 40ms

tp = 1ms

Ipp(A)

V (V)CL

Fig. 2-1 : Clamping voltage versus peak pulse

current (Tj initial = 85°C).

Exponential waveform tp = 40 ms and tp=1ms

(TRANSIL T2).

025 50 75 100 125 150 175

0.00

0.20

0.40

0.60

0.80

1.00

1.20

Tj initial (°C)

Ppp[Tj]/Ppp[Tj initial=85°C]

Fig. 3 : Relative variation of peak pulse power

versus junction temperature.

RBO40-40G / RBO40-40T

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1E-3 1E-2 1E-1 1E+0 1E+1

0.1

0.2

0.5

1.0

Zth(j-c)/Rth(j-c)

tp (s)

Fig. 4 : Relative variation of thermal impedance

junction to case versus pulse duration.

0.1 0.2 0.5 12 510 20 50 100

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VFM(V)

Tj = 25°°C

Tj = 150°°C

IFM(A)

Fig. 5-1 : Peak forward voltage drop versus peak

forward current (typical values) - (TRANSIL T2).

0.1 0.2 0.5 2 10 20 50 100

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VFM(V)

0.1 0.2 0.5 1 5 20 50 100

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Tj = 25°°C

Tj = 150°°C

IFM(A)

Fig. 5-2 : Peak forward voltage drop versus peak

forward current (typical values) - (DIODE D1).

Fig. 6 : Relative variation of leakage current

versus junction temperature.

RBO 40 40 G-

Reverse Battery &

Overvoltage Protection

Package:

G = D PAK

T = TO-220AB

I = 40A

F(AV)

V = 40V

ORDERING INFORMATION

RBO40-40G / RBO40-40T

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PACKAGE MECHANICAL DATA

D2PAK Plastic

2.0 MIN.

FLAT ZONE

REF.

DIMENSIONS

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 4.30 4.60 0.169 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037

B2 1.40 0.055

C 0.45 0.60 0.017 0.024

C2 1.21 1.36 0.047 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.28 0.393 0.405

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

L2 1.27 1.40 0.050 0.055

L3 1.40 1.75 0.055 0.069

R 0.40 0.016

V2 0° 8° 0° 8°

FOOT-PRINT (in millimeters)

D2PAK

8.90

3.70

1.30

5.08

16.90

10.30

RBO40-40G / RBO40-40T

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PACKAGE MECHANICAL DATA

TO-220AB Plastic

REF.

DIMENSIONS

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 15.20 15.90 0.598 0.625

a1 3.75 0.147

a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409

b1 0.61 0.88 0.024 0.034

b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181

c1 0.49 0.70 0.019 0.027

c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106

F 6.20 6.60 0.244 0.259

I 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

L 2.65 2.95 0.104 0.116

l2 1.14 1.70 0.044 0.066

l3 1.14 1.70 0.044 0.066

M 2.60 0.102

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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-

thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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