2SC4217 Ordering number : EN2968A SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SC4217 Color TV Chroma Output and Audio Output Applications Features * * High breakdown voltage (VCEO300V). Micaless package facilitating easy mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 300 V Collector-to-Emitter Voltage VCEO 300 V Emitter-to-Base Voltage VEBO 6 Collector Current Collector Current (Pulse) Collector Dissipation V IC 200 mA ICP 400 mA PC Junction Temperature Tj Storage Temperature Tstg Tc=25C 1.5 W 10 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions Ratings min typ max VCB=200V, IE=0A VEB=5V, IC=0A VCE=10V, IC=10mA 40* Unit 0.1 A 0.1 A 200* Continued on next page. * : The 2SC4217 is classified by 10mA hFE as follws: Rank C D hFE 40 to 80 60 to 120 E 100 to 200 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42507CB TI IM TC-00000677 / 80504TN (PC)/D1598HA (KT)/O239MO,TS No.2968-1/4 2SC4217 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Cob Output Capacitance Ratings Conditions Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) min typ Unit max VCE=10V, IC=10mA 70 VCB=50V, f=1MHz 3.5 IC=20mA, IB=2mA IC=20mA, IB=2mA MHz pF 0.6 V 1.0 V Package Dimensions unit : mm (typ) 7516-002 8.0 4.0 3.6 3.3 1.0 1.5 7.5 11.0 3.0 1.4 1.0 3.0 1.6 0.8 0.8 0.75 15.5 0.7 2 3 1 : Emitter 2 : Collector 3 : Base 1.7 1 2.4 4.8 SANYO : TO-126ML IC -- VCE 100 IC -- VCE 50 A 0 mA A 1.2m 1.4m A 0.8m A m .6 0 1.0 60 Collector Current, IC -- mA Collector Current, IC -- mA A 80 350A 40 A 1.6m 0.4mA 40 0.2mA 20 40 300A 250A 30 200A 150A 20 100A 10 50A IB=0mA 0 0 2 4 6 8 Collector-to-Emitter Voltage, VCE -- V IB=0A 0 10 ITR06489 0 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V ITR06490 No.2968-2/4 2SC4217 IC -- VBE VCE=10V 3 160 2 DC Current Gain, hFE 180 140 120 100 60 --25C 80 hFE -- IC 5 VCE=10V Ta=75 C 25C Collector Current, IC -- mA 200 Ta=75C 25C 100 --25C 7 5 3 2 40 10 20 7 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE -- V 5 7 1.0 2 3 5 2 3 5 7 100 2 Output Capacitance, Cob -- pF 7 5 3 2 10 5 f=1MHz 7 100 3 ITR06492 Cob -- VCB 100 VCE=10V 2 7 10 Collector Current, IC -- mA ITR06491 f T -- IC 3 Gain-Bandwidth Product, f T -- MHz 1.4 5 3 2 10 7 5 3 2 7 5 5 7 2 1.0 3 5 7 2 10 3 5 Collector Current, IC -- A 2 5 2 1.0 3 5 2 10 3 5 100 ITR06494 VBE(sat) -- IC 3 IC / IB=10 7 3 Collector-to-Base Voltage, VCB -- V ITR06493 VCE(sat) -- IC 1000 IC / IB=10 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 1.0 0.1 7 100 5 3 2 100 25C Ta=75C 7 --25C 5 1.0 25C Ta= --25C 7 75C 5 3 2 3 0.1 2 1.0 2 3 5 7 2 10 3 5 7 100 2 ITR06495 Collector Current, IC -- A 7 1.0 2 3 5 7 2 10 3 5 Collector Current, IC -- A ASO 7 7 100 2 ITR06496 PC -- Ta 2.0 3 10 n( tio =2 Tc op era C 5 tio 3 ms era DC 7 5 s s op 100 0 10 1m DC IC=200mA 2 Collector Dissipation, PC -- W ICP=400mA 5 n(T a= ) Collector Current, IC -- A 5 25 C ) 2 10 7 5 Tc=25C Single pulse 3 2 3 5 7 10 1.5 No 1.0 he at sin k 0.5 0 2 3 5 7 100 2 Collector-to-Emitter Voltage, VCE -- V 3 5 ITR06497 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT12434 No.2968-3/4 2SC4217 PC -- Tc Collector Dissipation, PC -- W 12 10 8 6 4 2 0 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT12435 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2007. Specifications and information herein are subject to change without notice. PS No.2968-4/4