Low Noise Transistors BC559, B, C BC560C PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector-Emitter Voltage VCEO -30 -45 Vdc Collector-Base Voltage VCBO -30 -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit -30 -45 -- -- -- -- -30 -50 -- -- -- -- -5.0 -- -- Vdc -- -- -- -- -15 -5.0 nAdc Adc -- -- -15 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CEO BC559 BC560 V(BR)CBO BC559 BC560 Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = -30 Vdc, IE = 0) (VCB = -30 Vdc, IE = 0, TA = +125C) ICBO Emitter Cutoff Current (VEB = -4.0 Vdc, IC = 0) IEBO Semiconductor Components Industries, LLC, 2001 February, 2001 - Rev. 2 Vdc 1 Vdc Publication Order Number: BC559/D BC559, B, C BC560C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit 100 100 180 380 120 150 270 290 500 -- -- -- 460 800 800 -- -- -- -0.075 -0.3 -0.25 -0.25 -0.6 -- -- -1.1 -- -- -- -0.55 -0.52 -0.55 -0.62 -- -- -0.7 fT -- 250 -- MHz Ccbo -- 2.5 -- pF 240 450 330 600 500 900 -- -- 0.5 -- 2.0 10 ON CHARACTERISTICS DC Current Gain (IC = -10 Adc, VCE = -5.0 Vdc) (IC = -2.0 mAdc, VCE = -5.0 Vdc) hFE BC559B BC559C/560C BC559B BC559C/560C BC559 Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -10 mAdc, IB = see note 1) (IC = -100 mAdc, IB = -5.0 mAdc, see note 2) VCE(sat) Base-Emitter Saturation Voltage (IC = -100 mAdc, IB = -5.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = -10 Adc, VCE = -5.0 Vdc) (IC = -100 Adc, VCE = -5.0 Vdc) (IC = -2.0 mAdc, VCE = -5.0 Vdc) VBE(on) -- Vdc Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = -2.0 mAdc, VCE = -5.0 V, f = 1.0 kHz) hfe BC559B BC559C/BC560C Noise Figure (IC = -200 Adc, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) (IC = -200 Adc, VCE = -5.0 Vdc, RS = 100 k, f = 1.0 kHz, f = 200 kHz) NOTES: 1. IB is value for which IC = -11 mA at VCE = -1.0 V. 2. Pulse test = 300 s - Duty cycle = 2%. http://onsemi.com 2 -- dB NF1 NF2 BC559, B, C BC560C -1.0 VCE = -10 V TA = 25C 1.5 -0.9 1.0 0.8 0.6 0.4 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 VCE(sat) @ IC/IB = 10 -0.1 -0.5 0 -0.1 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 Figure 2. "Saturation" and "On" Voltages 10 400 300 7.0 100 80 60 C, CAPACITANCE (pF) 200 VCE = -10 V TA = 25C 40 30 TA = 25C Cib 5.0 3.0 Cob 2.0 20 -0.5 -0.7 -1.0 -2.0 -5.0 -7.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) 1.0 -0.4 -0.6 -50 -1.0 -2.0 -4.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Current-Gain -- Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 -0.7 -0.2 0.3 0.2 -0.2 f T, CURRENT-GAIN TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 Figure 4. Capacitance 170 160 150 VCE = -10 V f = 1.0 kHz TA = 25C 140 130 120 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 Figure 5. Base Spreading Resistance http://onsemi.com 3 -10 -20 -40 BC559, B, C BC560C PACKAGE DIMENSIONS CASE 029-04 (TO-226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X-X N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 17: PIN 1. 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