Semiconductor Group 1 1998-08-27
Silizium-PIN-Fotodiode
NEU: in SMT und als Reverse Gullwing
Silicon PIN Photodiode
NEW: in SMT and as Reverse Gullwing
BPW 34
BPW 34 S
BPW 34 S (E9087)
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
GEO06643
4.0
3.7 4.3
4.5
5.4
4.9
0.6
0.4
0.6
0.4
1.2
0.7
0.3
0.5
0.8
0.6
Cathode marking
0.6
0.8
1.9
2.2
3.0
3.5
0.6
0.4
Chip position
0.4
0.6
0.35
0.2
0 ... 5˚
5.08 mm
spacing
Approx. weight 0.1 g
1.4
Photosensitive area
2.65 mm x 2.65 mm
1.8
feo06643
BPW 34
Wesentliche Merkmale
●Speziell geeignet für Anwendungen
im Bereich von 400 nm bis 1100 nm
●Kurze Schaltzeit (typ. 20 ns)
●DIL-Plastikbauform mit hoher
Packungsdichte
●BPW 34 S/(E9087): geeignet für
Vapor-Phase Löten und IR-Reflow
Löten (JEDEC level 4)
Anwendungen
●Lichtschranken für Gleich- und
Wechsellichtbetrieb
●IR-Fernsteuerungen
●Industrieelektronik
●“Messen/Steuern/Regeln”
Features
●Especially suitable for applications from
400 nm to 1100 nm
●Short switching time (typ. 20 ns)
●DIL plastic package with high packing
density
●BPW 34 S/(E9087): suitable for
vapor-phase and IR-reflow soldering
(JEDEC level 4)
Applications
●Photointerrupters
●IR remote controls
●Industrial electronics
●For control and drive circuits
BPW 34, BPW 34 S
BPW 34 S (E9087)
Semiconductor Group 2 1998-08-27
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Typ
Type Bestellnummer
Ordering Code
BPW 34 Q62702-P73
BPW 34 S Q62702-P1602
BPW 34 S (E9087) Q62702-P1790
4.5
4.3
4.0
3.7 1.5
1.7
0.9
0.7
Photosensitive area Cathode lead
GEO06863
0.3
6.7
6.2
1.2
1.1
0...0.1
Chip position
0...5˚
0.2
0.1
1.1
0.9
2.65 mm x 2.65 mm
1.8
±0.2
feo06862
4.5
4.3
4.0
3.7 1.5
1.7
0.9
0.7
Photosensitive area Cathode lead
GEO06916
0.3
6.7
6.2
1.2
1.1
0...0.1
Chip position
0...5˚
0.2
0.1
1.1
0.9
2.65 mm x 2.65 mm
1.8
±0.2
BPW34S
BPW 34 S
BPW 34 S (E9087)
BPW 34, BPW 34 S
BPW 34 S (E9087)
Semiconductor Group 3 1998-08-27
Grenzwerte
Maximum Ratings
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top;Tstg – 40 ... + 85 °C
Sperrspannung
Reverse voltage VR32 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K)
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit
Fotoempfindlichkeit, VR = 5 V
Spectral sensitivity S80 (≥ 50) nA/Ix
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10 % von Smax
Spectral range of sensitivity
S = 10 % of Smax
λ400 ... 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A7.00 mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L×B
L×W
2.65 ×2.65 mm ×mm
Halbwinkel
Half angle ϕ±60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR2 (≤ 30) nA
Spektrale Fotoempfindlichkeit, λ = 850 nm
Spectral sensitivity Sλ0.62 A/W
Quantenausbeute, λ = 850 nm
Quantum yield η0.90 Electrons
Photon
Leerlaufspannung, Ev = 1000 Ix
Open-circuit voltage VO365 (≥ 300) mV
BPW 34, BPW 34 S
BPW 34 S (E9087)
Semiconductor Group 4 1998-08-27
Kurzschlußstrom, Ev = 1000 Ix
Short-circuit current ISC 80 µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR= 5 V; λ = 850 nm; Ip = 800 µA
tr,tf20 ns
Durchlaßspannung, IF= 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR= 0 V, f= 1 MHz, E = 0
Capacitance C072 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR= 10 V, λ = 850 nm
NEP 4.1 ×10– 14 W
√Hz
Nachweisgrenze, VR= 10 V, λ = 850 nm
Detection limit D* 6.6 ×1012 cm · √Hz
W
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d)
Bezeichnung
Description Symbol
Symbol Wert
Value Einheit
Unit
BPW 34, BPW 34 S
BPW 34 S (E9087)
Semiconductor Group 5 1998-08-27
Directional characteristics Srel =f (ϕ)
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Relative spectral sensitivity
Srel =f (λ)
Dark current
IR=f (VR), E = 0
Photocurrent IP=f (Ev), VR = 5 V
Open-circuit voltage VO=f (Ev)
Capacitance
C=f (VR), f = 1 MHz, E = 0
Total power dissipation Ptot =f (TA)
Dark current
IR=f (TA), VR= 10 V, E = 0
λ
OHF00078
0
rel
S
400
20
40
60
80
%
100
500 600 700 800 900 nm 1100
0
OHF00080
Ι
R
R
V
0 5 10 15 V 20
1000
2000
3000
4000
pA
E
OHF01066
V
0
10
P
Ι
-1
10 10
1
10
2
10
4
10
0
10
1
10
2
10
34
10
3
10
2
10
1
10
10
0
V
µ
AmV
Ι
P
V
O
10
3
lx
V
OHF00081
R
-2
10
C
0
-1
10
0
10
1
10
2
10V
10
20
30
40
50
60
70
80
pF
100
T
OHF00958
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10
0
10
1
10
2
10
3
nA
20 40 60 80 ˚C 100
