SEMiX71GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 C 1200 V Tc = 25 C 115 A Tc = 80 C 88 A 75 A ICnom ICRM SEMiX(R)13 tpsc Trench IGBT Modules ICRM = 3xICnom 225 A -20 ... 20 V 10 s -40 ... 175 C Tc = 25 C 97 A Tc = 80 C 73 A VGES VCC = 800 V VGE 15 V Tj = 150 C VCES 1200 V Tj Inverse diode IF SEMiX71GD12T4s Target Data Tj = 175 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic Welding * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C A IFRM IFRM = 3xIFnom 225 A IFSM tp = 10 ms, sin 180, Tj = 25 C 429 A -40 ... 175 C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 C 4000 V Characteristics Symbol Remarks 75 Conditions min. typ. max. Unit Tj = 25 C 1.85 2.1 V Tj = 150 C 2.25 2.45 V Tj = 25 C 0.8 0.9 V Tj = 150 C 0.7 0.8 V Tj = 25 C 14.0 16.0 m 20.7 22.0 m 5.8 6.5 V 0.1 0.3 mA IGBT VCE(sat) IC = 75 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V VGE(th) VGE=VCE, IC = 3 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 C td(on) Eoff VCC = 600 V IC = 75 A Tj = 150 C RG on = 1 RG off = 1 di/dton = 2500 A/s di/dtoff = 930 A/s Rth(j-c) per IGBT Rth(j-s) per IGBT tr Eon td(off) tf Tj = 150 C 5 Tj = 25 C Tj = 150 C mA f = 1 MHz 4.4 nF f = 1 MHz 0.29 nF f = 1 MHz 0.24 nF 425 nC 10.00 145 ns 35 ns 7.5 mJ 370 ns 61 ns 6.8 mJ 0.38 K/W K/W GD (c) by SEMIKRON Rev. 26 - 02.12.2008 1 SEMiX71GD12T4s Characteristics Symbol Conditions Inverse diode VF = VEC IF = 75 A VGE = 0 V chiplevel VF0 SEMiX(R)13 rF min. typ. max. Unit Tj = 25 C 2.2 2.5 V Tj = 150 C 2.1 2.4 V V Tj = 25 C 1.1 1.3 1.5 Tj = 150 C 0.7 0.9 1.1 V Tj = 25 C 10.7 11.6 13.2 m 14.0 16.1 17.6 m Rth(j-c) Tj = 150 C IF = 75 A Tj = 150 C di/dtoff = 2700 A/s T = 150 C j VGE = -15 V T j = 150 C VCC = 600 V per diode SEMiX71GD12T4s Rth(j-s) per diode Target Data Module IRRM Trench IGBT Modules Qrr Err * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic Welding Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C RCC'+EE' res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) C 5.3 mJ K/W K/W TC = 25 C TC = 125 C to terminals (M6) Mt A 13 0.58 LCE Features 95 20 nH 0.7 m 1 m 0.04 K/W 3 5 Nm 2.5 5 Nm Nm w 350 g Temperature sensor R100 Tc=100C (R25=5 k) 0,493 5% k B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 2% K GD 2 Rev. 26 - 02.12.2008 (c) by SEMIKRON SEMiX71GD12T4s Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 26 - 02.12.2008 3 SEMiX71GD12T4s Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 26 - 02.12.2008 (c) by SEMIKRON SEMiX71GD12T4s SEMiX 13 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 26 - 02.12.2008 5