SEMiX71GD12T4s
© by SEMIKRON Rev. 26 – 02.12.2008 1
SEMiX®13
GD
Trench IGBT Modules
SEMiX71GD12T4s
Target Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1200 V
ICTj= 175 °C Tc=25°C 115 A
Tc=80°C 88 A
ICnom 75 A
ICRM ICRM = 3xICnom 225 A
VGES -20 ... 20 V
tpsc
VCC = 800 V
VGE ≤ 15 V
Tj= 150 °C
VCES ≤ 1200 V
10 µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Tc=25°C 97 A
Tc=80°C 73 A
IFnom 75 A
IFRM IFRM = 3xIFnom 225 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 429 A
Tj-40 ... 175 °C
Module
It(RMS) 600 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=75A
VGE =15V
chiplevel
Tj=25°C 1.85 2.1 V
Tj= 150 °C 2.25 2.45 V
VCE0 Tj=25°C 0.8 0.9 V
Tj= 150 °C 0.7 0.8 V
rCE VGE =15V Tj=25°C 14.0 16.0 mΩ
Tj= 150 °C 20.7 22.0 mΩ
VGE(th) VGE=VCE, IC=3mA 5 5.8 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=25°C 0.1 0.3 mA
Tj= 150 °C mA
Cies VCE =25V
VGE =0V
f=1MHz 4.4 nF
Coes f=1MHz 0.29 nF
Cres f=1MHz 0.24 nF
QGVGE =- 8 V...+ 15 V 425 nC
RGint Tj=25°C 10.00 Ω
td(on) VCC = 600 V
IC=75A
Tj= 150 °C
RG on =1Ω
RG off =1Ω
di/dton = 2500 A/µs
di/dtoff = 930 A/µs
145 ns
tr35 ns
Eon 7.5 mJ
td(off) 370 ns
tf61 ns
Eoff 6.8 mJ
Rth(j-c) per IGBT 0.38 K/W
Rth(j-s) per IGBT K/W
SEMiX71GD12T4s
2 Rev. 26 – 02.12.2008 © by SEMIKRON
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
VF = VEC IF=75A
VGE =0V
chiplevel
Tj=25°C 2.2 2.5 V
Tj= 150 °C 2.1 2.4 V
VF0 Tj=25°C 1.1 1.3 1.5 V
Tj= 150 °C 0.7 0.9 1.1 V
rFTj=25°C 10.7 11.6 13.2 mΩ
Tj= 150 °C 14.0 16.1 17.6 mΩ
IRRM IF=75A
di/dtoff = 2700 A/µs
VGE =-15V
VCC = 600 V
Tj= 150 °C 95 A
Qrr Tj= 150 °C 13 µC
Err Tj= 150 °C 5.3 mJ
Rth(j-c) per diode 0.58 K/W
Rth(j-s) per diode K/W
Module
LCE 20 nH
RCC'+EE' res., terminal-chip TC=25°C 0.7 mΩ
TC= 125 °C 1mΩ
Rth(c-s) per module 0.04 K/W
Msto heat sink (M5) 3 5 Nm
Mtto terminals (M6) 2.5 5 Nm
Nm
w350 g
Temperature sensor
R100 Tc=100°C (R25=5 kΩ)0,493
±5% kΩ
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2% K
SEMiX®13
GD
Trench IGBT Modules
SEMiX71GD12T4s
Target Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
SEMiX71GD12T4s
© by SEMIKRON Rev. 26 – 02.12.2008 3
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SEMiX71GD12T4s
4 Rev. 26 – 02.12.2008 © by SEMIKRON
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge
SEMiX71GD12T4s
© by SEMIKRON Rev. 26 – 02.12.2008 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
SEMiX 13
GD
