ON Semiconductor MJ10007 * SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: * * * * * * * Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Fast Turn-Off Times 30 ns Inductive Fall Time -- 25C (Typ) 500 ns Inductive Storage Time -- 25C (Typ) Operating Temperature Range -65 to +200C 100C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents CASE 1-07 TO-204AA (TO-3) 100 15 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIII MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 400 Vdc Collector-Emitter Voltage VCEX 450 Vdc Collector-Emitter Voltage VCEV 500 Vdc Emitter Base Voltage VEB 8.0 Vdc Collector Current -- Continuous -- Peak (1) IC ICM 10 20 Adc Base Current -- Continuous -- Peak (1) IB IBM 2.5 5.0 Adc Total Power Dissipation @ TC = 25C @ TC = 100C Derate above 25C PD 150 100 0.86 Watts TJ, Tstg -65 to +200 C Symbol Max Unit RJC 1.17 C/W TL 275 C Operating and Storage Junction Temperature Range W/C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. Designer's and SWITCHMODE are trademarks of ON Semiconductor, Inc. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 4 1 Publication Order Number: MJ10007/D MJ10007 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III IIIIII IIIIIIIIIIIIII IIIII IIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (Table 1) (IC = 250 mA, IB = 0, Vclamp = Rated VCEO) VCEO(sus) 400 -- -- Vdc Collector-Emitter Sustaining Voltage (Table 1, Figure 12) (IC = 1 A, Vclamp = Rated VCEX, TC = 100C) (IC = 5 A, Vclamp = Rated VCEX, TC = 100C) VCEX(sus) 450 325 -- -- -- -- Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1 5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150C) ICEV -- -- -- -- 0.25 5.0 Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100C) ICER -- -- 5.0 mAdc Emitter Cutoff Current (VEB = 2 Vdc, IC = 0) IEBO -- -- 175 mAdc OFF CHARACTERISTICS Vdc mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased IS/b See Figure 11 ON CHARACTERISTICS (2) DC Current Gain (IC = 2.5 Adc, VCE = 5.0 Vdc) (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE -- 40 30 -- -- 500 300 -- -- -- -- -- -- 1.9 2.9 2.0 -- -- -- -- 2.5 2.5 Vf -- 3.0 5 Vdc Small Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) hfe 10 -- -- -- Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz) Cob 60 -- 275 pF td -- 0.05 0.2 s tr -- 0.25 0.6 s ts -- 0.5 1.5 s tf -- 0.06 0.5 s (IC = 5.0 A( A(pk), k), Vclam clamp = Rated VCEX, IB1 = 250 mA, VBE(off) = 5.0 Vdc, TC = 100C) tsv -- 0.8 2.0 s tc -- 0.6 1.5 s (IC = 5.0 A( A(pk), k), Vclam clamp = Rated VCEX, IB1 = 250 mA, VBE(off) = 5.0 Vdc, TC = 25C) tsv -- 0.5 -- s tc -- 0.3 -- s Collector Emitter Saturation Voltage (IC = 5.0 Adc, IB = 250 mAdc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 5.0 Adc, IB = 250 mAdc, TC = 100C) VCE(sat) Base-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 250 mAdc) (IC = 5.0 Adc, IB = 250 mAdc, TC = 100C) VBE(sat) Diode Forward Voltage (1) (IF = 5.0 Adc) Vdc Vdc DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time (VCC = 250 Vdc, IC = 5.0 A, IB1 = 250 mA mA, VBE(off) 5 0 Vdc, Vdc tp = 50 s s, BE( ff) = 5.0 Duty Cycle 2.0%) Fall Time Inductive Load Clamped (Table 1) Storage Time Crossover Time Storage Time Crossover Time (1) The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. (1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers. (2) Pulse Test: PW = 300 s, Duty Cycle 2%. http://onsemi.com 2 MJ10007 300 200 TJ = 150C 100 70 50 25C 30 20 -55C 10 7 5 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN TYPICAL CHARACTERISTICS VCE = 5 V 3 0.1 0.2 0.3 2 3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMP) 5 10 7 3.4 TJ = 25C 3 2.6 IC = 0.3 A 1.4 1 0.6 10 20 30 VBE, BASE-EMITTER VOLTAGE (VOLTS) V CE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) 2.8 IC/IB = 10 1.6 TJ = - 55C 1.2 25C 0.8 150C 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 2.4 25C 1.6 25C 1.2 150C 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 75C REVERSE FORWARD 25C 10-1 -0.2 0 7 10 Figure 4. Base-Emitter Voltage Cob , OUTPUT CAPACITANCE (pF) IC, COLLECTOR CURRENT ( A) 100C 100 5 400 TJ = 125C 101 500 700 1 k TJ = - 55C 2 0.8 10 7 VCE = 250 V 102 100 50 70 200 300 IB, BASE CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 5 V Figure 3. Collector-Emitter Saturation Voltage 103 10 A Figure 2. Collector Saturation Region 2.4 0.4 5A 1.8 Figure 1. DC Current Gain 2 2.5 A 2.2 +0.2 +0.4 +0.6 TJ = 25C 200 80 60 40 0.1 0.2 0.5 +0.8 Cob 100 1 2 5 10 20 50 100 200 VBE, BASE-EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Output Capacitance http://onsemi.com 3 500 1000 MJ10007 Table 1. Test Conditions for Dynamic Performance VCEO(sus) VCEX(sus) AND INDUCTIVE SWITCHING RESISTIVE SWITCHING INDUCTIVE TEST CIRCUIT 1 INPUT CONDITIONS 20 1 0 INPUT 2 SEE ABOVE FOR DETAILED CONDITIONS CIRCUIT VALUES Lcoil = 180 H Rcoil = 0.05 VCC = 20 V fo = 500 kHz Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Vclamp = VCEO(sus) INDUCTIVE TEST CIRCUIT TEST CIRCUITS TUT SEE ABOVE FOR DETAILED CONDITIONS IC(pk) t1 VCC 90% IC tfi 10% Vclamp 10% IC Lcoil (IC ) pk VCC Lcoil (IC TUT 1 2 ) pk RL VCC VClamp Test Equipment Scope -- Tektronix 475 or Equivalent t2 t measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10-90% Vclamp tfi = Current Fall Time, 90-10% IC tti = Current Tail, 10-2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the turn-off waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222. Vclamp tti tc 90% IB1 t2 tf VCE or Vclamp trv t1 Adjusted to Obtain IC t1 VCE 90% Vclamp Vclamp VCC = 250 V RL = 50 Pulse Width = 50 s RESISTIVE TEST CIRCUIT tf CLAMPED t TIME tsv VCC RS = 0.1 tf UNCLAMPED t2 IC RS = 0.1 IC Lcoil Vclamp = Rated VCEX Value Lcoil Vclamp 2 Vclamp Rcoil OUTPUT WAVEFORMS Rcoil 1N4937 OR EQUIVALENT INPUT 1N4937 OR EQUIVALENT 2 PW Varied to Attain IC = 250 mA 1 TUT 2% IC IB TIME PSWT = 1/2 VCC IC (tc) f Figure 7. Inductive Switching Measurements In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100C. SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate http://onsemi.com 4 MJ10007 RESISTIVE SWITCHING PERFORMANCE 5 1 0.7 VCC = 250 V IB1 = 250 mA TJ = 25C 0.3 0.2 0.1 0.07 0.05 tr 0.03 td 0.02 0.01 0.5 0.7 1 3 0.3 2 IC, COLLECTOR CURRENT (AMP) 0.2 0.1 t, TIME (s) t, TIME (s) 0.5 3 2 5 7 ts 1 0.7 0.5 tf 0.3 0.2 0.1 0.07 0.05 10 0.1 0.2 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. Turn-On Time 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) 0.02 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.01 SINGLE PULSE 0.1 0.2 0.3 7 10 P(pk) RJC = r(t) JC RJC = 1.17C/W MAX 0.05 0.05 5 Figure 9. Turn-Off Time 0.1 0.02 0.03 VBE(off) = 5 V VCC = 250 V IB1 = 250 mA TJ = 25C 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 Figure 10. Thermal Response http://onsemi.com 5 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 MJ10007 The Safe Operating Area figures shown in Figures 11 and 12 are specified ratings for these devices under the test conditions shown. IC, COLLECTOR CURRENT (AMPS) 20 10 1.0 ms 5.0 2.0 FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 s 5.0 ms dc 1.0 100 s SAFE OPERATING AREA INFORMATION TC = 25C BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED 0.5 0.2 0.1 0.05 0.02 4.0 MJ10007 6.0 10 20 40 60 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 350 400 Figure 11. Forward Bias Safe Operating Area REVERSE BIAS TURN OFF LOAD LINE BOUNDARY FOR MJ10007 THE LOCUS FOR MJ10006 IS 50 V LESS 8 6 TJ 100C For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as VCEX(sus) at a given collector current and represents a voltage-current condition that can be sustained during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives the complete reverse bias safe operating area characteristics. VBE(off) = 5 V 4 VBE(off) = 2 V VBE(off) = 0 V 2 0 0 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 12. Reverse Bias Switching Safe Operating Area 100 POWER DERATING FACTOR (%) IC, COLLECTOR CURRENT (AMP) 10 SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 0 40 80 120 160 TC, CASE TEMPERATURE (C) Figure 13. Power Derating http://onsemi.com 6 200 MJ10007 PACKAGE DIMENSIONS TO-204AA (TO-3) CASE 1-07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. A N C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M http://onsemi.com 7 INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 MJ10007 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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