SWITCHMODE Series
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
The MJ10007 Darlington transistor is designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is
critical. It is particularly suited for line operated switchmode
applications such as:
•Switching Regulators
•Inverters
•Solenoid and Relay Drivers
•Motor Controls
•Deflection Circuits
•Fast Turn–Off Times
30 ns Inductive Fall Time — 25C (Typ)
500 ns Inductive Storage Time — 25C (Typ)
Operating Temperature Range –65 to +200C
•100C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
Value
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO
ÎÎÎÎÎ
ÎÎÎÎÎ
400
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEX
ÎÎÎÎÎ
ÎÎÎÎÎ
450
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEV
ÎÎÎÎÎ
ÎÎÎÎÎ
500
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VEB
ÎÎÎÎÎ
ÎÎÎÎÎ
8.0
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
— Peak (1)
ÎÎÎÎÎ
ÎÎÎÎÎ
IC
ICM
ÎÎÎÎÎ
ÎÎÎÎÎ
10
20
ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
— Peak (1)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IB
IBM
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
2.5
5.0
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25C
@ TC = 100C
Derate above 25C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
PD
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
150
100
0.86
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature Range
ÎÎÎÎÎ
ÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎ
ÎÎÎÎÎ
–65 to +200
ÎÎÎÎ
ÎÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
ÎÎÎÎÎ
RθJC
ÎÎÎÎÎ
ÎÎÎÎÎ
1.17
ÎÎÎÎ
ÎÎÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds
ÎÎÎÎÎ
ÎÎÎÎÎ
TL
ÎÎÎÎÎ
ÎÎÎÎÎ
275
ÎÎÎÎ
ÎÎÎÎ
C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. Designer’s and SWITCHMODE are trademarks of ON Semiconductor, Inc.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 4 1Publication Order Number:
MJ10007/D
10 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
400 VOLTS
150 WATTS
MJ10007
*ON Semiconductor Preferred Device
CASE 1–07
TO–204AA
(TO–3)
*
≈100 ≈15
MJ10007
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Typ
ÎÎÎÎ
ÎÎÎÎ
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 250 mA, IB = 0, Vclamp = Rated VCEO)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
400
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
Î
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (Table 1, Figure 12)
(IC = 1 A, Vclamp = Rated VCEX, TC = 100C)
(IC = 5 A, Vclamp = Rated VCEX, TC = 100C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEX(sus)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
450
325
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
—
Î
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1 5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEV
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
—
—
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
0.25
5.0
Î
Î
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100C)
ÎÎÎÎÎ
ÎÎÎÎÎ
ICER
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
—
ÎÎÎÎ
ÎÎÎÎ
5.0
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VEB = 2 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
175
Î
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with base forward biased
ÎÎÎÎÎ
ÎÎÎÎÎ
IS/b
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
See Figure 11
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 2.5 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
40
30
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
500
300
Î
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 250 mAdc)
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 5.0 Adc, IB = 250 mAdc, TC = 100C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
—
—
—
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
—
—
—
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
1.9
2.9
2.0
Î
Î
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 250 mAdc)
(IC = 5.0 Adc, IB = 250 mAdc, TC = 100C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
—
—
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
2.5
2.5
Î
Î
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Diode Forward Voltage (1)
(IF = 5.0 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
Vf
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
3.0
ÎÎÎÎ
ÎÎÎÎ
5
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small Signal Current Gain
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hfe
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
10
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
Î
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Cob
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
60
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
275
Î
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Resistive Load (Table 1)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Delay Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
td
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
0.05
ÎÎÎÎ
ÎÎÎÎ
0.2
µs
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Rise Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCC = 250 Vdc, IC = 5.0 A,
IB1 = 250 mA VBE( ff) =50Vdc t =50µs
ÎÎÎÎÎ
ÎÎÎÎÎ
tr
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
0.25
ÎÎÎÎ
ÎÎÎÎ
0.6
µs
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IB1 = 250 mA, VBE(off) = 5.0 Vdc, tp = 50 µs,
Duty Cycle 2.0%)
ÎÎÎÎÎ
ÎÎÎÎÎ
ts
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
0.5
ÎÎÎÎ
ÎÎÎÎ
1.5
µs
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Fall Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Duty
Cycle
2.0%)
ÎÎÎÎÎ
ÎÎÎÎÎ
tf
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
0.06
ÎÎÎÎ
ÎÎÎÎ
0.5
µs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Inductive Load Clamped (Table 1)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 A(pk), Vclamp = Rated VCEX, IB1 = 250 mA,
ÎÎÎÎÎ
ÎÎÎÎÎ
tsv
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
0.8
ÎÎÎÎ
ÎÎÎÎ
2.0
µs
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Crossover Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC
5
.
0
A( k)
,
Vclam
Rated
VCEX
,
IB1
250
mA
,
VBE(off) = 5.0 Vdc, TC = 100C)
ÎÎÎÎÎ
ÎÎÎÎÎ
tc
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
0.6
ÎÎÎÎ
ÎÎÎÎ
1.5
µs
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 A(pk), Vclamp = Rated VCEX, IB1 = 250 mA,
ÎÎÎÎÎ
ÎÎÎÎÎ
tsv
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
0.5
ÎÎÎÎ
ÎÎÎÎ
—
µs
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Crossover Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC
5
.
0
A( k)
,
Vclam
Rated
VCEX
,
IB1
250
mA
,
VBE(off) = 5.0 Vdc, TC = 25C)
ÎÎÎÎÎ
ÎÎÎÎÎ
tc
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
0.3
ÎÎÎÎ
ÎÎÎÎ
—
µs
(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
(2) Pulse Test: PW = 300 µs, Duty Cycle 2%.
MJ10007
http://onsemi.com
3
VBE, BASE-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
30.2 0.3 1 2 3
100
50
Figure 2. Collector Saturation Region
3.4
IB, BASE CURRENT (mA)
0.6 10 20 70 100 300 700 1 k
2.6
2.2
1.8
1.4
IC = 0.3 A
TJ = 25°C
10 A
VBE, BASE-EMITTER VOLTAGE (VOLTS)
103
102
101
70
hFE, DC CURRENT GAIN
TJ = 150°C
VCE = 5 V
, COLLECTOR CURRENT ( A)IC
100
0 +0.2-0.2
VCE = 250 V
TJ = 125°C
100°C
25°C
30
20
10
7
0.5 0.7 5 7
Figure 3. Collector-Emitter Saturation Voltage
2.4
0.1
IC, COLLECTOR CURRENT (AMP)
0.4 0.3 0.5 0.7 1 2 5
2
1.6
1.2
0.8
IC/IB = 10
TJ = - 55°C
73
Figure 4. Base-Emitter Voltage
2.8
IC, COLLECTOR CURRENT (AMP)
0.8 0.2 0.3 0.5 0.7
2.4
2
1.6
1.2
Figure 5. Collector Cutoff Region
0.1
Figure 6. Output Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40 12 20100.2
100
60
TJ = 25°C
Cob
400
200
80
100 200 1000
25°C
-55°C
200
300
10
5 A2.5 A
30 50020050
VOLTAGE (VOLTS)
10
25°C
150°C
2573101
25°C
150°C
25°C
TJ = - 55°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 5 V
75°C
µ
10-1
+0.4 +0.8+0.6 550
Cob, OUTPUT CAPACITANCE (pF)
REVERSE FORWARD
5
0.1
3
1
VCE(sat), COLLECTOR-EMITTER SATURATION
0.2 0.1
5000.5
TYPICAL CHARACTERISTICS
MJ10007
http://onsemi.com
4
IC(pk)
t
t1tf
t
IC
VCE
TEST CIRCUITS CIRCUIT
VALUES INPUT
CONDITIONS
VCEO(sus) VCEX(sus) AND INDUCTIVE SWITCHING RESISTIVE SWITCHING
Lcoil = 10 mH, VCC = 10 V
Rcoil = 0.7 Ω
Vclamp = VCEO(sus)
Lcoil = 180 µH
Rcoil = 0.05 Ω
VCC = 20 V
fo = 500 kHz
Vclamp = Rated VCEX Value VCC = 250 V
RL = 50 Ω
Pulse Width = 50 µs
t2
TIME
tf CLAMPED
VCE or
Vclamp
tf UNCLAMPED t2
20 1
0
PW Varied to Attain
IC = 250 mA
2
INDUCTIVE TEST CIRCUIT
INDUCTIVE TEST CIRCUIT
t1 Adjusted to
Obtain IC
Test Equipment
Scope — Tektronix
475 or Equivalent
RESISTIVE TEST CIRCUITOUTPUT WAVEFORMS
1
INPUT
2
Rcoil
Lcoil
VCC
Vclamp
RS =
0.1 Ω
1N4937
OR
EQUIVALENT
TUT
SEE ABOVE FOR
DETAILED CONDITIONS
1
INPUT
2
Rcoil
Lcoil
VCC
Vclamp
RS =
0.1 Ω
1N4937
OR
EQUIVALENT
TUT
SEE ABOVE FOR
DETAILED CONDITIONS
1
2
TUT
RL
VCC
t1 ≈Lcoil (ICpk)
VCC
t2 ≈Lcoil (ICpk)
VClamp
Table 1. Test Conditions for Dynamic Performance
Figure 7. Inductive Switching Measurements
TIME
tsv trv tfi tti
90% Vclamp
tc
90% IB1
IB
10%
IC2%
IC
Vclamp
IC
Vclamp 10%
Vclamp
90% IC
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate
measurements must be made on each waveform to
determine the total switching time. For this reason, the
following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10–90% Vclamp
tfi = Current Fall Time, 90–10% IC
tti = Current Tail, 10–2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the turn–off waveforms is shown
in Figure 7 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN–222.
PSWT = 1/2 VCC IC (tc) f
In general, trv + tfi tc. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified a t 2 5C and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a “SWITCHMODE” transistor are the inductive
switching speeds (tc and tsv) which are guaranteed at 100C.
MJ10007
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5
1
Figure 8. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)µ
0.1
0.01 0.3 10
0.03
0.1 2
td
tr
0.2 3
0.05
0.07
5
Figure 9. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)µ
2
0.07
0.05
VBE(off) = 5 V
VCC = 250 V
IB1 = 250 mA
TJ = 25°C
tf
ts
0.3
0.5
VCC = 250 V
IB1 = 250 mA
TJ = 25°C
3
0.1
0.7
0.5
0.2
0.3
0.02
5710.70.5 0.3 100.1 20.2 3 5 710.70.5
0.2
0.7
1
RESISTIVE SWITCHING PERFORMANCE
Figure 10. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
RθJC = r(t) θJC
RθJC = 1.17°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.3 3.0 30 300
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6
The Safe Operating Area figures shown in Figures 11 and 12
are specified ratings for these devices under the test
conditions shown.
20
4.0
Figure 11. Forward Bias Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
2.0
1.0
0.5
0.1
6.0 10 20 40
400
60
0.02
IC, COLLECTOR CURRENT (AMPS)
TC = 25°C
dc
0.2
100 200 350
100 µs
10 µ
s
10
0
Figure 12. Reverse Bias Switching
Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
8
6
0500
2
IC, COLLECTOR CURRENT (AMP)
4
300 400100 200
VBE(off) = 5 V
TURN OFF LOAD LINE
BOUNDARY FOR MJ10007
THE LOCUS FOR MJ10006
IS 50 V LESS
1.0 ms
5.0
ms
MJ10007
VBE(off) = 2 V
VBE(off) = 0 V
TJ 100°C
0.05
5.0
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN LIMITED
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TC = 25C; T J(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found at
any case temperature by using the appropriate curve on
Figure 13.
TJ(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished b y several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified a s VCEX(sus) at a given collector current
and represents a voltage–current condition that can be
sustained during reverse biased turn–off. This rating is
verified under clamped conditions so that the device is never
subjected to an avalanche mode. Figure 12 gives the
complete reverse bias safe operating area characteristics.
100
80
60
20
00 40 80 120 200
Figure 13. Power Derating
TC, CASE TEMPERATURE (°C)
POWER DERATING FACTOR (%)
THERMAL DERATING
SECOND BREAKDOWN
DERATING
160
40
MJ10007
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7
PACKAGE DIMENSIONS
CASE 1–07
ISSUE Z
TO–204AA (TO–3)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
–T– SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
UL
GB
V
H
MJ10007
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