SOWER: MOS BET [irra FIELD EFFECT POWER TRANSISTOR 400, 350 VOLTS Rps(ON) =1590 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power s supplies, inverters, converters and solenoid/relay drivers. CASE STYLE TO-220AB Also, the extended safe operating area with good linear DIMENSIONS ARE eee AND (MILLIMETERS) transfer characteristics makes it well suited for many linear Sea 6 +187 Fy 32) 086(1.39 applications such as audio amplifiers and servo motors. pot ; im ae Features OD Fe Sees . CASE St } TREFERENCE. e Polysilicon gate Improved stability and reliabilit POINT ysilicon g P y y usaa.| + seg) | @ No secondary breakdown Excellent ruggedness MANS) | \ -720(6.59) AL: + | .130(3.3) off 2080-18) e Ultra-fast switching Independent of temperature A I | J- 1" 00%10.028) * Voltage controlled High transconductance reRw } -800112.7)MIN. . ; TERM.2 51.29 e Low input capacitance Reduced drive requirement TERMS _ Excellent thermal stability Ease of paralleling Son88 Po ae 7 = aera 98511.39) _of Eo 21016 33) ed UNIT TYPE [TERM.IITERM.2| TERM.3 TAB POWER MOS FET/TO-220-AB] GATE }ORAIN|SGURCE| ORAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF732 IRF733 UNITS Drain-Source Voltage Voss 400 350 Volts Drain-Gate Voltage, Reg = 1M VpGR 400 350 Volts Continuous Drain Current @ To = 25C Ip 4.5 4.5 A @ Tc = 100C 3.0 3.0 A Pulsed Drain Current lom 18 18 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ To = 25C Pp 75 75 Watts Derate Above 25C 0.6 0.6 W/C Operating and Storage Junction Temperature Range Ty, Tsta ~55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 1.67 1.67 C/W Thermal Resistance, Junction to Ambient Rea 80 80 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 215 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC |syMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF732 BVpss 400 Volts (Vgs = OV, Ip = 250 WA) IRF733 350 Zero Gate Voltage Drain Current loss (Vps = Max Rating, Vgg = OV, Tc = 25C) = _ 250 HA (Vps = Max Rating, 0.8, Veg = OV, To = 125C) 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | Vas(tH) 2.0 _ 4.0 Volts (Vos = Vas; tp = 250 uA) On-State Drain Current | 45 _ _ A (Vag = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 3.0A) Rpbs(ON) _ 1.2 1.5 Ohms Forward Transconductance (Vps = 10V, Ip = 3.0A) Ofs 2.1 2.5 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss - 650 800 pF Output Capacitance Vos = 25V Coss _ 100 300 pF Reverse Transfer Capacitance f= 1MHz Crss _ 15 80 pF switching characteristics Turn-on Delay Time Vos = 175V ta(on) _ 15 _ ns Rise Time Ip = 3A, Vag = 15V tr _ 20 _ ns Turn-off Delay Time Roen = 500, Res = 12.50 ta (off) - 30 _ ns Fall Time (Ras (Equiv.) = 100) tf _ 20 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ 45 A Pulsed Source Current Ism _ _ 18 A . Diode Forward Voitage _ (To = 25C, V@g = OV, Ig = 4.5A) Vsb 0.9 18 Volts Reverse Recovery Time ter _ 360 ns (Ig = 5.5A, dlg/dt =.100A/usec, To = 125C) Qrar _ 4.0 _ uG *Pulse Test: Pulse width < 300 ys, duty cycle < 2% 100 80 60 40 20 10 8 6 4 2 1.0 a8 0.6 0.4 OPERATION IN THIS AR Y BE LIMITED BY R Ip, DRAIN CURRENT {AMPERES} 1 SINGLE PULSE Ta= 0.2 bc 6 8 10 20 40 60 80100 Vos, ORAIN SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 1 1 2 4 200 400 600 1000 216 CONDITIONS: Ras(on) CONDITIONS: Ip = 3.0 A, Vag = 10V V@s(TH) CONDITIONS: Ip = 250nA, Vg = Veg Rosion AND Vegiz4) NORMALIZED ~40 Qo 40 80 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rygign; AND Vegiry VS: TEMP. 120 160