ELECTRICAL CHARACTERISTICS
VCC+=10V, VCC-=0V,RL
,CLconnectedto VCC/2, Tamb =25oC (unless otherwisespecified)
Symbol Parameter TS912I/AI/BI Unit
Min. Typ. Max.
Vio Input Offset Voltage (Vic =V
o=V
CC/2) TS912
TS912A
TS912B
Tmin. ≤Tamb ≤Tmax. TS912
TS912A
TS912B
10
5
2
12
7
3
mV
DVio Input Offset Voltage Drift 5 µV/oC
Iio Input Offset Current - (note 1)
Tmin. ≤Tamb ≤Tmax. 1 100
200 pA
Iib Input Bias Current - (note 1)
Tmin. ≤Tamb ≤Tmax. 1 150
300 pA
ICC Supply Current (per amplifier, AVCL = 1, no load)
Tmin. ≤Tamb ≤Tmax. 400 600
700 µA
CMR Common Mode Rejection Ratio Vic = 3 to 7V, Vo=5V
V
ic = 0 to 10V, Vo=5V 60
50 90
75 dB
SVR Supply Voltage Rejection Ratio (VCC+= 5 to 10V, VO=V
CC /2) 60 90 dB
Avd Large Signal Voltage Gain (RL=10kΩ,V
O= 2.5V to 7.5V)
Tmin. ≤Tamb ≤Tmax. 20
15 60 V/mV
VOH High Level Output Voltage (Vid = 1V) RL= 100kΩ
RL=10kΩ
R
L= 600Ω
RL= 100Ω
Tmin. ≤Tamb ≤Tmax. RL=10kΩ
R
L= 600Ω
9.95
9.85
9
9.8
8.8
9.95
9.35
7.8
V
VOL Low Level Output Voltage (Vid = -1V) RL= 100kΩ
RL=10kΩ
R
L= 600Ω
RL= 100Ω
Tmin. ≤Tamb ≤Tmax. RL=10kΩ
R
L= 600Ω
50
650
2300
50
150
800
150
900
mV
IoOutput Short Circuit Current (Vid =±1V) Source (Vo=V
CC−)
Sink (Vo=V
CC+)45
50 65
75 mA
GBP Gain Bandwidth Product
(AVCL = 100, RL=10kΩ,C
L= 100pF, f = 100kHz) 1.4 MHz
SR+Slew Rate (AVCL =1,R
L=10kΩ,C
L= 100pF, Vi= 2.5V to 7.5V) 1.3 V/µs
SR-Slew Rate (AVCL =1,R
L=10kΩ,C
L= 100pF, Vi= 2.5V to 7.5V) 0.8 V/µs
∅m Phase Margin 40 Degrees
enEquivalent Input Noise Voltage (Rs= 100Ω, f = 1kHz) 30 nV
√Hz
THD Total Harmonic Distortion
(AVCL =1,R
L=10kΩ,CL= 100pF, VO= 4.75V to 5.25V, f = 1kHz) 0.024 %
Cin Input Capacitance 1.5 pF
VO1/VO2 Channel Separation (f = 1kHz) 120 dB
Note 1 : Maximum values including unavoidable inaccuracies of the industrial test.
TS912
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