8134976 SEMICON INC, S T-SEMICOND 4? DE fp an34976 DOoosko 2 IT 87D 00560 D SEMICONDUCTORS SILICON AVALANCHE RECTIFIERS 1 TO 350 AMPERES The part numbers listed below cover Some common letters are: the basic axial lead and stud type diodes. Letters may be added to the part numberto indicate additional properties such as: P Positive Base N Negative Base polarity, controlled avalanche, special leads, and studs. Anode Cathode CA designates controlled avalanche. <4+_ Symbol > The diode avalances within a specified Cathode Anode maximum and minimum voltage. All rectifiers listed here have ava- fanche characteristics and surge capa- bilities 20-50% higher than other recti- flers of the same current rating. They can also be supplied with controlled avalanche characteristics. Large. chips and high conductivity construction elim- inate the need for additional surge sup- pression components usually required In power supply circuitry. The stud base units are normally supplied with the an- ode connected to the solder terminal. For anode connected to the stud, change suffix letter P to suffix N in the part number. Rating (Amps) -[- 1.0 4,0 10 1.0 - "to 20 | : : Case ars) . a- -e Me. E F LA QAF | SAF BF iFSM (amps) - - 0- F- 80. --M | 70- Ta - 30 180 | 150 tt (ArSec) - -f . 104 - 18 . | + 20 : 20 20 38 15 93.4 93.4 TC (Ambient) - | 40 55 _ 40 : 65 - 55 - 40 | PIV [Max. VAMS| a - 1 70 Gi 10C 10M Bi Fi 10LA 2AF1 SAFI 3BF1 200 140 G2 206 20M E2 F2 20LA QAF2 3AF2 3BF2 300 210 G3 30 30M E3 F3 30LA 2AF3 3AF3 3BF3 400 280 G4 40C M-500 4 F4 40LA 2AF4 3AF4 3BF4 600 420 G6 60C 60 E6 F6 6OLA 2AF6 3AF6 3BF6 800 560 G8 80C BOM 8 80LA 2AF8 3AF8 3BF8 4000) 7 Gio 1006 M 10 F10 1OOLA 2AF1O SAF10 3BF10 4200 840 Gi2 4206 120M E12 Fi2 120LA DAFI2 SAFI2 3BF12 1400 930 Gat4 1406 140M E14 Fi4 140LA 2AFi4 BAFI4 3BF14 . Rating (Amps) 6- 6 - 6 12 18 40 - 50 ase Style -f- AL OD - Dod. DO4 DOs DOS DOs FSM {ampa) ; . 400. . 260 O 800 1000 Ht AsSec) - 664 864 / - 1680 280 - 7 876 . 664 : 2660 - 4050 TC (Ambient) - ~ 40A _ 40A - 450C 0c; 1500 | - 4356 150C 150C Pi Max, VAMS , - 5 . 100 70 6ALi 6QD1 10H3P $T210P ST210E T310P ST410P ST5A10P 200 140 6AL2 6QD2 20H3P sT220P ST220E T320P ST420P ST5A20P 300 210 8AL3 6QD3 30H3P $T230P $T230E $T330P ST430P ST5A30P 400 280 | BAL4 6QD6 40H3P ST240P ST240E 340P ST440P STSA40P 600 420 < 6AL6 6QD6 60H3P ST260P ST260E T360P ST460P ST5AG0P 800 560 BAL8 6QD8 80H3P ST280P ST280E 380P $T480P ST5A80P 1000 700 BAL1O 6QD10 100H3P T2100P ST2100E $T3100P ST4100P ST5A100F 1200 840 6AL12 6QD12 120H3P $T2120P 812120E 373120P $T4120P ST5A120P 1400 980 6AL14 6QD14 140H3P $T2140P T2140E ST3140P ST4t STSA140P * Rating (Amps) 0 - 7 - - 100 . 100 _* 160 160 ~ 250 276 350 * GaseStyla _ bo8 S18 ST6A pos STI6A STs p09 boa - fRentSec) , aso | dee00 16,000 37.950 to $ee.000 405,000 203,000 Temp*C Case _ - 4. 1806- - | - 1606 - [1500 50C 150C 150C. 1500 E PIV _ MAX. VaMS | ~ Ue * > = COU 100 70 ST1110P ST610P ST6A10P ST1610P STIGA10P ST810P ST910P ST2010P 200 140 T1120P ST620P ST6A20P ST1620P STI6A20P ST820P ST920P sT2020P 300 210 ST1130P sT630P ST6A30P ST1630P ST{6A30P ST830P ST930P $T2030P 400 280 $T1140P ST640P ST6A40P ST1640P ST16A40P ST840P ST940P 2040 500 350 ST1150P ST650P ST6ASO0P ST1650P STIGA50P sTss0P ST950P ST20S0P 600 4 ST1160P sT660P T6AGO! ST1660P ST16A60P TSGOP ST960P ST2060P 800 560 ST1180P ST680P ST6A80P ST1680P STi6A80P TBO! ST980P ST2080P 1 7 ST11100P ST6100P ST6A100P $T16100P ST16A100P $T8100P ST9100P ST20100P 00 840 $T11120P ST6120P ST6A120P $T16120P ST16A120P $T8120P $T9120P $T20120P 1400 980 ST11140P ST6140P ST6A140P ST16140P ST16A140P 878140P $T9140P $T20140P ENVIRONMENTAL TESTS & BURN-IN-POWER PULSE We perform the following tests per the standard specified to meet the customer specification. . Temperature Cycling . Centrifuge Shock . Vibration . Gross Leak TestHelium Back Fill Sensitivity 10-+ cc/sec, Air . Fine Leak TestHelium Back Fit! Sensitivity 10-cc/sec. . Forward Surge . Reverse Power Pulse . Environmental Storage BURN-IN: Burn-in has been designed to reduce infant mortality. A re- verse bias is applied to either the diode or SCR at a high temper- _ OOND MNABND ature. Weaker units change characteristics and are discarded. We highly recommend this procedure to maximize retiability and to provide a stabilized product suitable for centerline design pur- poses in the application. POWER PULSE: ransients may destroy a silicon diode. The avalance process can be tested to verify its ability to quench transients. A typical test applies the rated joule energy in the form ofa fast-rising high dv/dt pulse. This exceeds the dv/dt ratings normally found in practice. The pulse is applied three to five times in rapid succes- sion to insure that the diode will withstand it. A combination of temperature cycling, reverse power pulsing, and burn-in may be applied to verify diode Integrity prior to ship- ment. High reliability applications may require unique combina- tions of Environmental, Power, and Burn-In, tests. DIMENSIONAL DRAWINGS ON PAGES 41, 42, 43