HRC0103A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-624 (Z)
Rev 0
May. 1998
Features
Low forward voltage drop and suitable for high effifiency rectifying.
Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HRC0103A S1 UFP
Outline
Cathode mark
Mark
12
1. Cathode
2. Anode
S1
HRC0103A
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse
voltage VRRM*1 30 V
Average rectified current Io*1 100 mA
Non-Repetitive peak
forward surge current IFSM*2 3A
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Note 1. See from Fig.3 to Fig.5
Note 2. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF 0.44 V IF = 100 mA
Reverse current IR——50µAV
R
= 30V
Thermal resistance Rth(j-a) 500 °C/W Polyimide board*1
Note 1. Polyimide board
3.0
Unit
: mm
0.8
1.5
20hx15wx0.8t
1.5
HRC0103A
3
Main Characteristic
0 0.2 0.4 0.6 0.8 1.0 01020
30 40 50
10
-6
10
-3
10
-5
10
-4
10
-2
1.0
Ta=25°C
10
-1
Ta=75°C
10
-7
10
-5
10
-6
10
-2
10
-3
10
-4
Ta=75°C
Ta=25°C
0.5
0.4
0.3
0.2
0.1
40
3020
10
00
t
T
0V
D=
\
T
t
Tj =125°C
0.6
D=1/2
D=2/3
D=5/6
0.12
0.100.08
0.06
00.04
DC
D=1/2
D=1/3
D=1/6
t
T
0A D=
\
T
t
0.02
0
Tj =25°C
0.02
0.04
0.06
0.08
0.10
Sin(
˘=
180
°)
Sin(
˘=
180
°)
Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage
Forward voltage V (V)
F
Forward current I (A)
F
Pulse test
Reverse voltage V (V)
R
Reverse current I (A)
R
Pulse test
Fig.4 Reverse power dissipation Vs. Reverse voltage
Reverse voltage V
R
@
(V)
Reverse power dissipation Pd (W)
Forward current I F (A)
Forward power dissipation Pd (W)
Fig.3 Forward power dissipation Vs. Forward current
HRC0103A
4
Main Characteristic
75 100
25 500 125
0.12
0.10
0.08
0.06
0
0.04
0.02
-25
D=1/2
VR=VRRM/2
Tj =125°C
Rth(j-a)=500°C/W
D=1/6
Sin(
˘=
180°)
D=1/3
DC
Ambient temperature Ta (°C)
Average forward current IO (A)
Fig.5 Average forward current Vs. Ambient temperature
HRC0103A
5
Package Dimensions
Unit : mm
1.2 ± 0.10
1.6 ± 0.10
0.3 ± 0.05
0.8 ± 0.10
0.6 ± 0.10
Cathode Mark
S1
HITACHI Code
JEDEC Code
EIAJ Code
Weight (g)
UFP
SC-79
0.0016
1
2Cathode
Anode
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to: