TB62756FUG
2006-06-14
1
TOSHIBA BiCD Digit al Integrated Circuit Silicon Monolithic
TB62756FUG
Step-up Type DC/DC Converter for White LEDs
The TB62756FUG is a high efficiency step-up type DC/DC
converter that is designed especially for use as a constant current
driver of white LEDs.
It is possible to drive 2 to 6 white LEDs connected in series
using a lithium-ion battery.
This IC incorporates an N-ch-MOS FET required for switching
of an external inductor.
The forward current of the LEDs can be controlled by an
external resistor.
This IC is best suited for use as a driver of white LED back
lighting in color LCDs in PDAs, cellular phones and handy
terminal devices.
The suffix (G) appended to the part number represents a Lead(Pb)-Free product.
Features
• Can drive 2 to 6 white LEDs connected series
• Variable LED current IF is set with a external resistor: 20 mA (typ.) @RSENS = 16 Ω
• Output power: Available for 400 mW LED loading
• High efficiency: 87% @Maximum
• IC package: SSOP6-P-0.95 (SOT23-6)
• Switching frequency: 1.1 MHz (typ.)
Weight: 0.016 g (typ.)
TB62756FUG
2006-06-14
2
Block Diagram
Pin Assignment (top view)
Note 1: The IC may break if mounted 180 degr ees in reverse. Ensure the device i s correctly orientated before
assembley.
Pin Functions
No. Symbol Function
1 SHDN Input pin for IC ON/ OFF control.
SHDN = H → Operation Mode, SHD N = L → Shutdown Mode (IC shutdown)
Please do not open this terminal.
2 NC No connect ion or connected to GND. (Note 2)
3 VIN Supply voltage pin. Supply voltage range: 2.8 V to 5.5 V
4 SW DC-D C converter switching pin – switch incorporates N-ch MOSFET.
5 GND Ground pin.
6 FB Connected t o the cathode of LED.
Note 2: The NC terminal is not connect ed to th e inter nal c i rcuit.
3
5
24
Monostable
multivibrator
for
reference
Circuit
on/off 6
1
SW NC
FB
GND
SHDN
VIN
Monostable
multivibrator
for
off time control
Error
AMP.
CTL
AMP.
SHDN
(NC)
VIN
FB
GND
SW
Q
1
2
3
6
5
4
TB62756FUG
2006-06-14
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I/O Equivalent P in Circuits
1. SHDN Pin
2. NC Pin
The NC pin is not connected to any internal
circuit.
3. SW Pin
4. FB Pin
4
SW
6
VIN
FB
1
VIN
SHDN
2
NC
TB62756FUG
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Applicatio n Circuit Example
Protection at the Time of LED Opening
The zener diode in the application circuit example is necessary for the provision of over-voltage protection for
when the LED becomes open. As the IC does not incorporate a voltage protection circuit, it is strongly advised that
a zener diode be connected.
The zener diode should satisfy the following conditions:
i) Less than maximum output voltage of 24 V
ii) Greater than the total series LED VF
iii) Less than the maximum output capacitance C2.
Moreover, by connecting a protection circuit such as RZD in the figure below, it is possible to control the output
current when the LED becomes open, and to use a zener diode of lower tolerance.
An example of IZD control by RZD connection. (RSENS = 16 Ω)
RZD (Ω) IZD (mA)
500 0.6 (typ.)
100 2.8 (typ.)
In order to avoid adverse effects on driver characteristics,
Toshiba recommends a resistance of 500 Ω or less.
3
5
24
Monostable
multivibrator
for
reference
Circuit
on/off 6
1
SW NC
FB
GND
SHDN
VIN
Monostable
multivibrator
for
off time control
Error
AMP.
CTL
AMP.
PWM
2.2 µF
VIN 4.7 to 10 µH
VZ = 24 V
1 µF
16 Ω@20 mA
500 Ω
SW
GND FB
S-Di
IZD 1
µ
F
C2
RZD
RSENS
IF
Protection Circuit Ap plication
TB62756FUG
2006-06-14
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Output-side Capacitor Setting
It is recommended that the value of C2 be equal to, or greater than 1.0 (µF).
External Inductor Size Setting
For each number of LEDs, the selected inductance should be greater than the value indicated in the table below.
Number of LEDs Inductance (Unit: µH) Note
2 4.7
3
4 6.8
5
6 10
IF = 20 mA
Control of IF
The resistance RSENS is connected between the FB pin and the GND pin.
The average current is controlled by the RSENS value, and calculated using the following equation:
IF (mA) = [325 mV/RSENS (Ω)]
Margin of error is ±5%.
Dimming using PWM Signal Input
A dimming function can also by applied using a PWM signal.
[Notes]
• When using a PWM signal, the minimum pulse width of the PWM should be greater than 33 µs.
• Duty ratio of PWM function should be set at 10% to 90%.
• The recommended PWM frequency should be 100 Hz to 10 kHz.
<<Output current is calculated using the following equation>>
][
[%]×][
=)( Ω
R
DutyONmV325
mA
ISENS
F
TB62756FUG
2006-06-14
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Absolute Maximum Ratings (Ta = 25°C, unless otherwise specified)
Characteristics Symbol Ratings Unit
Power supply v oltage VIN −0.3 to 6.0 V
Input voltage VSHDN −0.3 to VIN + 0.3 (Note 1) V
Switching pin voltage VO (SW) −0.3 to 24 V
0.41 (IC only)
Power dissipat ion PD 0.47 (IC m ounted on PCB) (Note 2) W
Rth (j-a) 1 300 (IC only)
Thermal resistance Rth (j-a) 2 260 (IC mounted on PCB) °C/W
Operating temperature range Topr −40 to 85 °C
Storage temperat ure Tstg −55 to 150 °C
Maximum junction temperatur e Tj 150 °C
Note 1: However, do not exceed 6 V.
Note 2: Power dissipation is reduced by 3.8 mW/°C from the absolute maximum rating for every 1°C exceeding the
ambient temperatur e of 25°C ( when the IC is mounted on a PCB).
Recomm end ed Operating Co ndi tion (Ta = −40 to 85°C, unless otherwise specified)
Characteristics Symbol Test Conditions Min Typ. Max Unit
Power supply v oltage VIN ⎯ 2.8 ⎯ 5.5 V
SHDN pin input pulse wi dth tpw “H”, “L” dut y width 33 ⎯ ⎯ µs
LED current (A verage value) IF1 VIN = 3.6 V, RSENS = 16 Ω
4 whit e LEDs, Ta = 25° C ⎯ 20 ⎯ mA
Electrical Characteristics (Ta = 25°C, VIN = 2.8 to 5.5 V, unless otherwise specified)
Characteristics Symbol Test Conditions Min Typ. Max Unit
Operating consumption current IIN (ON) V
IN = 3.6 V, RSENS = 16 Ω ⎯ 0.9 1.5 mA
Standby consumption curre nt IIN (OFF) V
IN = 3.6 V, VSHDN = 0 V ⎯ 0.5 1.0 µA
SHDN pin H level input v oltage VHSHDN ⎯ 1.3 ⎯ VIN V
SHDN pin L level input voltag e VLSHDN ⎯ 0 ⎯ 0.4 V
SHDN pin current ISHDN V
IN = 3.6 V, VSHDN = 3.6 V or 0 V −10 0 10 µA
Integrated MOS-F ET switching
frequency fOSC V
IN = 3.6 V, VSHDN = 3.6 V 0.77 1.1 1.43 MHz
Switching pin protection voltage VO (SW) ⎯ ⎯ 25 ⎯ V
Switching pin current IO (SW) ⎯ ⎯ 400 ⎯ mA
Switching pin leakage current IOZ (SW) ⎯ ⎯ 0.5 1 µA
FB pin feedback voltage VFB VIN = 3.6 V, RSENS = 16 Ω
L = 4. 7 µH 308 325 342 mV
FB pin line regulation ∆VFB VIN = 3.6 V center
VIN = 3.0 V to 5.0 V −5 ⎯ 5 %
TB62756FUG
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1. Applicatio n Circui t E xample and Measurement Data (referen ce data)
Note: These applicati on examples are provided for reference only. Thoro ugh eval uati on and testing should be
implemented when designing your ap plication’s mass produc tion design.
Input Voltage - Eff iciency/Output Current
4LED Drive, L= 6.8µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
<Mea surement Data>
Efficiency in the range of VIN = 2.8 to 5.5 V
Efficiency (%) Average Ef ficiency (%)
2 LEDs 82. 60 to 88.46 86.29
3 LEDs 82. 69 to 87.78 85.95
4 LEDs 80. 73 to 86.22 83.05
5 LEDs 80. 73 to 87.28 83.45
6 LEDs 79. 78 to 85.55 81.15
Output current in the range of VIN = 3. 0 to 5.0 V (V IN = 3.6 V typ . )
Tolerance (%)
Output Current (mA)
VIN = 3.6 V Min Max
2 LEDs 21.13 −3.50 1.77
3 LEDs 20.60 −1.95 1.38
4 LEDs 20.87 −1.75 1.11
5 LEDs 20.06 −1.81 1.15
6 LEDs 19.90 −1.95 1.28
Input Voltage - Eff iciency/Output Current
2LED Drive, L= 4.7µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Eff iciency/Output Current
3LED Drive, L= 6.8µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Ef ficiency/ Outpu t Current
5LED Drive, L=10µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/Output Current
6LED Dri ve , L=10µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
S-Di L1
VIN =
2.8 to 5.5 V
C1 = 2.2 µF
C2 = 1.0 µF
RSENS
= 16 Ω
VIN SW
FB
GND
SHDN
WLEDs
2 to 6
•
Evaluation conditions (Ta = 25°C)
L1 : CXLD120 series (NEO MAX CO.,Ltd.)
(Size: 2.5 mm × 3.0 mm × 1.2 mm)
C1 : C2012JB1E225K (TDK Corp.)
C2 : C2012JB1E105K (TDK Corp.)
S-Di : CUS02 1 A/30 V (TOSHIBA Corp.)
WLEDs : NSCW 215T (NICHIA Corp. )
TB62756FUG
2006-06-14
8
2. Applicatio n Circui t E xample and Measurement Data (referen ce data)
Note: These applicati on examples are provided for reference only. Thoro ugh eval uati on and testing should be
implemented when designing your ap plication’s mass produc tion design.
Input Voltage - Efficiency/Output Current
2LED Drive, L= 4.7µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/ Out put Current
5LED Drive, L=10µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/Output Current
3LED Drive, L= 6.8µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/ Out put Current
6LED Drive, L=10µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/Output Current
4LED Drive, L= 6.8µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
<Mea surement Data>
Efficiency in the range of VIN = 2.8 to 5.5 V
Efficiency (%) Average Ef ficiency (%)
2 LEDs 83. 10 to 88.60 86.55
3 LEDs 81. 32 to 86.47 84.54
4 LEDs 79. 15 to 84.63 81.30
5 LEDs 79. 72 to 86.39 82.87
6 LEDs 78. 91 to 85.10 80.47
Output current in the range of VIN = 3. 0 to 5.0 V (V IN = 3.6 V typ . )
Tolerance (%)
Output Current (mA)
VIN = 3.6 V Min Max
2 LEDs 21.17 −3.32 1.73
3 LEDs 20.85 −1.95 1.38
4 LEDs 20.56 −1.79 1.15
5 LEDs 20.10 −1.82 1.22
6 LEDs 19.95 −1.94 1.26
S-Di L1
VIN =
2.8 to 5.5 V
C1 = 2.2 µF
C2 = 1.0 µF
RSENS
= 16 Ω
VIN SW
FB
GND
SHDN
WLEDs
2 to 6
•
Evaluation conditions (Ta = 25°C)
L1 : 1001AS series (TOKO, INC)
(Size: 3.6 mm × 3.6 mm × 1.2 mm)
C1 : C2012JB1E225K (TDK Corp.)
C2 : C2012JB1E105K (TDK Corp.)
S-Di : CUS02 1 A/30 V (TOSHIBA Corp.)
WLEDs : NSCW 215T (NICHIA Corp. )
TB62756FUG
2006-06-14
9
3. Applicatio n Circui t E xample and Measurement Data (referen ce data)
Note: These applicati on examples are provided for reference only. Thoro ugh eval uati on and testing should be
implemented when designing your ap plication’s mass produc tion design.
I n put Voltage - Efficiency/Output Current
2LED Drive, L=4.7µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/ Out put Current
5LED Drive, L=10µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/ Out put Current
3LED Drive, L=6.8µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/ Out put Current
6LED Drive, L=10µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/Output Current
4LED Drive, L= 6.8µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
<Mea surement Data>
Efficiency in the range of VIN = 2.8 to 5.5 V
Efficiency (%) Average Ef ficiency (%)
2 LEDs 82. 37 to 88.70 86.38
3 LEDs 80. 19 to 86.55 84.12
4 LEDs 78. 11 to 84.54 80.16
5 LEDs 74. 79 to 84.94 79.94
6 LEDs 74. 14 to 83.47 77.17
Output current in the range of VIN = 3. 0 to 5.0 V (V IN = 3.6 V typ . )
Tolerance (%)
Output Current (mA)
VIN = 3.6 V Min Max
2 LEDs 21.19 −3.26 1.69
3 LEDs 20.90 −1.87 2.17
4 LEDs 20.63 −1.78 1.01
5 LEDs 20.09 −1.88 1.25
6 LEDs 19.93 −1.99 1.07
S-Di L1
VIN =
2.8 to 5.5 V
C1 = 2.2 µF
C2 = 1.0 µF
RSENS
= 16 Ω
VIN SW
FB
GND
SHDN
WLEDs
2 to 6
•
Evaluation conditions (Ta = 25°C)
L1 : LQH2M series
(Murata Manufacturing Co.,Ltd.)
(Size: 2.0 mm × 1.6 mm × 0.95 mm)
C1 : C2012JB1E105K (TDK Corp.)
C2 : C2012JB1E105K (TDK Corp.)
S-Di : CUS02 1 A/30 V (TOSHIBA Corp.)
WLEDs : NSCW 215T (NICHIA Corp. )
TB62756FUG
2006-06-14
10
4. Applicatio n Circui t E xample and Measurement Data (referen ce data)
Note: These applicati on examples are provided for reference only. Thoro ugh eval uati on and testing should be
implemented when designing your ap plication’s mass produc tion design.
Input Voltage - Efficiency/Output Current
2LED Drive, L=4.7µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/ Out put Current
5LED Drive, L=10µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/Output Current
3LED Drive, L= 6.8µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/ Out put Current
6LED Drive, L=10µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/ Out put Current
4LED Drive, L=6.8µH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
IOUT(mA)
50
60
70
80
90
100
Efficiency(%)
IOUT
Efficiency
IF (mA)
IF
Efficiency
<Mea surement Data>
Efficiency in the range of VIN = 2.8 to 5.5 V
Efficiency (%) Average Ef ficiency (%)
2 LEDs 79. 85 to 86.97 84.02
3 LEDs 80. 19 to 85.32 83.39
4 LEDs 78. 77 to 83.60 80.69
5 LEDs 79. 72 to 86.39 82.87
6 LEDs 78. 91 to 85.10 80.49
Output current in the range of VIN = 3. 0 to 5.0 V (V IN = 3.6 V typ . )
Tolerance (%)
Output Current (mA)
VIN = 3.6 V Min Max
2 LEDs 21.19 −3.08 1.67
3 LEDs 20.89 −1.86 1.33
4 LEDs 20.64 −1.68 1.11
5 LEDs 20.10 −1.82 1.22
6 LEDs 19.95 −1.94 1.26
S-Di L1
VIN =
2.8 to 5.5 V
C1 = 2.2 µF
C2 = 1.0 µF
RSENS
= 16 Ω
VIN SW
FB
GND
SHDN
WLEDs
2 to 6
•
Evaluation conditions (Ta = 25°C)
L1 : VLF3010A series (TDK Corp.)
(Size: 3.0 mm × 3.0 mm × 1.0 mm)
C1 : C2012JB1E225K (TDK Corp.)
C2 : C2012JB1E105K (TDK Corp.)
S-Di : CUS02 1 A/30 V (TOSHIBA Corp.)
WLEDs : NSCW 215T (NICHIA Corp. )
TB62756FUG
2006-06-14
11
5. Applicatio n Circui t E xample and Measurement Data (referen ce data)
Note: These applicati on examples are provided for reference only. Thoro ugh eval uati on and testing should be
implemented when designing your ap plication’s mass produc tion design.
Input Voltage - Efficiency/Output Current
3LED Drive, L=5.1μH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
Output Current (mA)
50
60
70
80
90
100
Efficiency(%)
Iout
Efficiency
IF (mA)
IF
Efficiency
Input Voltage - Efficiency/Output Current
4LED Drive, L=5.1μH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
Output Current (mA)
50
60
70
80
90
100
Efficiency(%)
Iout
Efficiency
IF (mA)
IF
Efficiency
<Mea surement Data>
Efficiency in the range of VIN = 2.8 to 5.5 V
Efficiency (%) Average Ef ficiency (%)
2 LEDs 83. 08 to 89.23 86.73
3 LEDs 79. 02 to 86.30 83.52
4 LEDs 75. 75 to 83.83 80.78
Output current in the range of VIN = 3. 0 to 5.0 V (V IN = 3.6 V typ . )
Tolerance (%)
Output Current (mA)
VIN = 3.6 V Min Max
2 LEDs 21.06 −2.46 4.02
3 LEDs 20.57 −2.39 2.94
4 LEDs 20.22 −2.28 2.65
Input Voltage - Efficiency/Output Current
2LED Drive, L=5.1μH
10
15
20
25
30
35
2.8 3.1 3.4 3.7 4 4.3 4.6 4.9 5.2 5.5
VIN(V)
Output Current (mA)
50
60
70
80
90
100
Efficiency(%)
Iout
Efficiency
IF (mA)
IF
Efficiency
S-Di L1
VIN =
2.8 to 5.5 V
C1 = 2.2 µF
C2 = 1.0 µF
RSENS
= 16 Ω
VIN SW
FB
GND
SHDN
WLEDs
2 to 4
•
Evaluation conditions (Ta = 25°C)
L1 : 32R51 (KOA Corp.)
(Size: 3.2 mm × 2.5 mm × 0.6 mm)
C1 : C2012JB1E225K (TDK Corp.)
C2 : C2012JB1E105K (TDK Corp.)
S-Di : CUS02 1 A/30 V (TOSHIBA Corp.)
WLEDs : NSCW 215T (NICHIA Corp. )
TB62756FUG
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12
Package Dimensions
Weight: 0.016 g (typ.)
TB62756FUG
2006-06-14
13
Notes on Contents
1. Block Diagrams
Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for
explanatory purposes.
2. Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory
purposes.
3. Timing Charts
Timing charts may be simplified for explanatory purposes.
4. Application Circuits
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Toshiba does not grant any license to any industrial property rights by providing these examples of
application circuits.
5. Test Circuits
Components in the test circuits are used only to obtain and confirm the device characteristics. These
components and circuits are not guaranteed to prevent malfunction or failure from occurring in the
application equipment.
IC Usage Considerati on s
Notes on Handling of ICs
(1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be
exceeded, even for a moment. Do not exceed any of these ratings.
Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
(2) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in
case of over current and/or IC failure. The IC will fully break down when used under conditions that
exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal
pulse noise occurs from the wiring or load, causing a large current to continuously flow and the
breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of
breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are
required.
(3) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the
design to prevent device malfunction or breakdown caused by the current resulting from the inrush
current at power ON or the negative current resulting from the back electromotive force at power OFF.
IC breakdown may cause injury, smoke or ignition.
Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable,
the protection function may not operate, causing IC breakdown. IC breakdown may cause injury,
smoke or ignition.
(4) Do not insert devices in the wrong orientation or incorrectly.
Make sure that the positive and negative terminals of power supplies are connected properly.
Otherwise, the current or power consumption may exceed the absolute maximum rating, and
exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
In addition, do not use any device that is applied the current with inserting in the wrong orientation
or incorrectly even just one time.
TB62756FUG
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(5) Carefully select external components (such as inputs and negative feedback capacitors) and load
components (such as speakers), for example, power amp and regulator.
If there is a large amount of leakage current such as input or negative feedback condenser, the IC
output DC voltage will increase. If this output voltage is connected to a speaker with low input
withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over current can cause
smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied
Load (BTL) connection type IC that inputs output DC voltage to a speaker directly.
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Points to Remember on Handling of ICs
(1) Heat Radiation Design
In using an IC with large current flow such as power amp, regulator or driver, please design the
device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at
any time and condition. These ICs generate heat even during normal use. An inadequate IC heat
radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In
addition, please design the device taking into considerate the effect of IC heat radiation with
peripheral components.
(2) Back-EMF
When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to
the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power
supply is small, the device’s motor power supply and output pins might be exposed to conditions
beyond absolute maximum ratings. To avoid this problem, take the effect of back-EMF into
consideration in system design.
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About solderability, following conditions were confirmed
• Solderability
(1) Us e of S n-37P b solder B ath
· solder bath tem perature = 230°C
· dipping time
= 5 seconds
· the number of tim es = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath tem perature = 245°C
· dipping time
= 5 seconds
· the number of tim es = once
· use of R-type flux
RESTRICTIONS ON PRODUCT USE 060116EB
A
• The informati on contained herein is subject t o change without notice. 021023_D
• TOSHIBA is continu ally work ing to improve t he quality an d reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, b odi l y injury or damage to property.
In developi ng your designs, please ensure t hat TOSHIBA products ar e used within specifi ed operat ing r anges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc . 021023_A
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(comput er, personal equi pment, offic e equipment, me asuring equipm ent, industri al robotics , domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this
document shall be made at th e cust om er’s own ri sk. 021023_B
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/ or sale are prohibited under any appl icable laws and regulati ons. 06010 6_Q
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TO SHI BA or ot hers. 021023_C
• The products described in this document ar e subj ect to th e forei gn exchange and foreign trade laws. 021023_E
