SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE BVceEo hee Vce(saT) fr Ch @10V, Pr Device Type @10mA Typical 1 MHz @ 25C (Vv) Min.-Max. @ 1,Vc_(V) |(V) Max. @ Ic, Ig (MHz) Typical (Pf) (mW) 2N2711 2N2712 2N2713 2N2714 2N2923 soon 2N2924 2N2925 2N2926 2N3390 2N3391 DADAOG ~~ NS NS SI OS 2N3391A 2N3392 2N3393 2N3394 2N3395 DHHAOAD ~~ NSN 2N3396 2N3397 2N3398 2N3402 2N3403 aann ws 2N3404 2N3405 2N3414 2N3415 2N3416 oooag o 2N3417 2N3662 2N3663 2N3843 2N3843A NNwoOoM 2N3844 2N3844A 2N3845 2N3845A 2N3854 SNM NN = 2N3854A 2N3855 2N3855A 2N3856 2N3856A NANNN 2N3858 2N3858A 2N3859 2N3859A 2N3860 2N3877 2N3877A 2N3900 2N3900A 2N3901 www MN NNNNN 101 Silicon Transistors I Gal I 2N2923,4,5 The General Electric 2N2923, 2N2924 and 2N2925 are a family of planar passivated NPN silicon transistors intended for general purpose applications. The planar passivated construc- tion assures excellent device stability and life. These high performance, high value devices are made possible by utilizing advanced manufacturing techniques and epoxy encapsulation. absolute maximum ratings: (25C) (unless otherwise specified) Voltages Collector to Emitter Vero Emitter to Base Vezo Collector to Base Veo Current Collector (Steady State) * Ic Dissipation Total Power (Free air at 25C) ** Py Total Power (Free air at 55C) ** Py Temperature Storage Tote Operating T; CS Reng << 100 mA 300 mW 250 mW 55 to +150C *Determined from power limitations due to saturation voltage at this current. **Derate 3.6 mW/C increase in ambient temperature above 25C. +125C DIMENSIONS WITHIN JEDEC OUTLINE TO-98 NOTE 1; Lead diameter is controlled in the zone between .070 and .250 from the seat- ing plane. Between .250 and end of lead a max. of .021 is held. ALL DIMEN. IN INCHES AND ARE REFERENCE UNLESS TOLERANCED vy a oo oa FF ale als / 075 .055 | 265 4 225 .500 SEATING MIN PLANE O00)" * b ,050+ .005 t|.100+ .005 2 GS A A A A A A A A A A OE SS A OE A A A A LA A TT A A SL SN mt electrical characteristics: (25C) (uniess otherwise specified) D-C CHARACTERISTICS Collector Cutoff Current (Vcs = 25V) (Ves = 25V, Ts = 100C) Emitter Cutoff Current (Ves = 5V) Forward Current Transfer Ratio (Vou = 4.5V, Ic = 2 mA) 2N2928 2N2924 2N2925 SMALL SIGNAL CHARACTERISTICS Forward Current Transfer Ratio (Vex == 10V, Ic = 2 mA, f = 1kHz) 2N2923 2N2924 2N2925 Input impedance (Vee = 10V, Ip = 2 mA, f = 1kHz) HIGH FREQUENCY CHARACTERISTICS Collector Capacitance (Ves = 10V, In = 0, f = 1MHz) Gain Bandwidth Product (Ic = 4mA, Ves = 5V) NOISE Noise Figure (Ic = 100 vA, Vor = 5V, f = 10kHz, BW = 1 Hz, Rg = 200009) Toso Icxo Tazo hes hte Coo fr 350 3 LEADS or 108? (NOTE 1) Min. Typ. 115 155 215 90 150 235 15 4.5 q 160 Max. 0.1 15 0.1 180 300 470 10 nA uA pA ohms pF MHz 2.8 (2N2925 only) dB