LTC4257
1
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The LTC
®
4257 provides complete signature and power
interface functions for a device operating in an IEEE
802.3af Power over Ethernet (PoE) system. The LTC4257
simplifies Powered Device (PD) design by incorporating
the 25k signature resistor, the classification current source,
input current limit with thermal foldback, undervoltage
lockout and power good signalling, all in a single 8-pin
package. By incorporating a high voltage power MOSFET
onboard, the LTC4257 provides the system designer with
reduced cost while also saving board space.
The LTC4257 can interface directly with a variety of Linear
Technology DC/DC converter products to provide a cost
effective power solution for IP phones, wireless access
points and other PDs. Linear Technology also provides
solutions for Power Sourcing Equipment (PSE) applica-
tions with quad network power controllers.
The LTC4257 is available in the 8-pin SO and low profile
(3mm × 3mm) DFN packages.
IP Phone Power Management
Wireless Access Points
Telecom Power Control
, LTC and LT are registered trademarks of Linear Technology Corporation.
Complete Power Interface Port for IEEE 802.3af
®
Powered Devices (PDs)
Onboard 100V, 400mA Power MOSFET
Precision Input Current Limit
Onboard 25k Signature Resistor
Programmable Classification Current (Class 0-4)
Undervoltage Lockout
Smart Thermal Protection
Power Good Signal
Available in 8-Pin SO and Low Profile (3mm × 3mm)
DFN Packages
IEEE 802.3af PD
Power over Ethernet
Interface Controller
GND
RCLASS
RCLASS
SMAJ58A
0.1µF
PWRGD
LTC4257 VIN
SHDN
5µF
MIN
100k
3.3V
TO LOGIC
RTN
SWITCHING
POWER SUPPLY
VIN VOUT
48V FROM
POWER SOURCING
EQUIPMENT
(PSE)
4257 TA01
+
+
DF01SA
~
~
+
Powered Device (PD)
5ms/DIV
V
IN
50V/DIV
V
OUT
20V/DIV
I
IN
200mA/DIV
PWRGD
50V/DIV
4225 TA02
LTC4257 Charging 300µF
Load Capacitor
FEATURES
DESCRIPTIO
U
APPLICATIO S
U
TYPICAL APPLICATIO
U
All other trademarks are the property of their respective owners.
LTC4257
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TOP VIEW
DD PACKAGE
8-LEAD (3mm × 3mm) PLASTIC DFN
5
6
7
8
4
3
2
1NC
R
CLASS
NC
V
IN
GND
NC
PWRGD
V
OUT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
IN
Supply Voltage Voltage with Respect to GND Pin (Notes 4, 5, 6)
Maximum Operating Voltage –57 V
Signature Range 1.5 9.5 V
Classification Range 12.5 21 V
UVLO Turn-On Voltage 37.7 39.2 40.2 V
UVLO Turn-Off Voltage 29.3 30.5 31.5 V
I
IN_ON
IC Supply Current when ON V
IN
= –48V, Pins 5, 6 Floating 3mA
I
IN_CLASS
IC Supply Current During Classification V
IN
= –17.5V, Pin 2 Floating, V
OUT
Tied to GND 0.35 0.50 0.65 mA
(Note 7)
I
CLASS
Current Accuracy During Classification 10mA < I
CLASS
< 40mA, –12.5V V
IN
21V, ±3.5 %
(Notes 8, 9)
(Notes 1, 2)
V
IN
Voltage ............................................. 0.3V to – 100V
V
OUT
, PWRGD Voltage ............. V
IN
+ 100V to V
IN
– 0.3V
R
CLASS
Voltage ............................ V
IN
+ 7V to V
IN
– 0.3V
PWRGD Current .................................................. 10mA
R
CLASS
Current .................................................. 100mA
The denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. (Note 3)
ABSOLUTE AXI U RATI GS
WWWU
ELECTRICAL CHARACTERISTICS
Operating Ambient Temperature Range
LTC4257C ............................................... 0°C to 70°C
LTC4257I............................................. –40°C to 85°C
Storage Temperature Range
S8 Package....................................... 65°C to 150°C
DD Package ...................................... 65°C to 125°C
Lead Temperature (Soldering, 10 sec).................. 300°C
Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grades are identified by a label on the shipping container.
ORDER PART NUMBER S8 PART MARKING
T
JMAX
= 150°C, θ
JA
= 150°C/W
4257
4257I
LTC4257CS8
LTC4257IS8
1
2
3
4
8
7
6
5
TOP VIEW
GND
NC
PWRGD
VOUT
NC
RCLASS
NC
VIN
S8 PACKAGE
8-LEAD PLASTIC SO
PACKAGE/ORDER I FOR ATIO
UU
W
ORDER PART NUMBER DD PART MARKING*
T
JMAX
= 125°C, θ
JA
= 43°C/W
EXPOSED PAD TO BE SOLDERED TO
ELECTRICALLY ISOLATED PCB HEATSINK
LACTLTC4257CDD
LTC4257IDD
Order Options Tape and Reel: Add #TR Lead Free: Add #PBF
Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: http://www.linear.com/leadfree/
LTC4257
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SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
The denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. (Note 3)
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All voltages are with respect to GND pin.
Note 3: The LTC4257 operates with a negative supply voltage in the range
of –1.5V to –57V. To avoid confusion, voltages in this data sheet are
always referred to in terms of absolute magnitude. Terms such as
“maximum negative voltage” refer to the largest negative voltage and a
“rising negative voltage” refers to a voltage that is becoming more
negative.
Note 4: The LTC4257 is designed to work with two polarity protection
diodes between the PSE and PD. Parameter ranges specified in the
Electrical Characteristics are with respect to LTC4257 pins and are
designed to meet IEEE 802.3af specifications when these diode drops are
included. See Applications Information.
Note 5: Signature resistance is measured via the 2-point V/I method as
defined by IEEE 802.3af. The LTC4257 signature resistance is offset from
25k to account for diode resistance. With two series diodes, the total PD
resistance will be between 23.75k and 26.25k and meet IEEE 802.3af
specifications. The minimum probe voltages measured at the LTC4257
pins are –1.5V and –2.5V. The maximum probe voltages are –8.5V and
9.5V.
Note 6: The LTC4257 includes hysteresis in the UVLO voltages to preclude
any start-up oscillation. Per IEEE 802.3af requirements, the LTC4257 will
power up from a voltage source with 20 series resistance on the first
trial.
Note 7: I
IN_CLASS
does not include classification current programmed at
Pin 2. Total supply current in classification mode will be I
IN_CLASS
+ I
CLASS
(see Note 8).
Note 8: I
CLASS
is the measured current flowing through R
CLASS
.
I
CLASS
accuracy is with respect to the ideal current defined as
I
CLASS
= 1.237/R
CLASS
. The current accuracy specification does not
include variations in R
CLASS
resistance. The total classification current for
a PD also includes the IC quiescent current (I
IN_CLASS
). See Applications
Information.
Note 9: For the DD package, this parameter is assured by design and
wafer level testing.
Note 10: I
OUT_LEAK
includes current drawn at the V
OUT
pin by the power
good status circuit. This current is compensated for in the 25k signature
resistance and does not affect PD operation.
Note 11: The LTC4257 includes smart thermal protection. In the event of
an overtemperature condition, the LTC4257 will reduce the input current
limit by 50% to reduce the power dissipation in the package. If the part
continues heating and reaches the shutdown temperature, the current is
reduced to zero until the part cools below the overtemperature limit. The
LTC4257 is also protected against thermal damage from incorrect
classification probing by the PSE. If the LTC4257 exceeds the
overtemperature trip point, the classification load current is disabled.
ELECTRICAL CHARACTERISTICS
R
SIGNATURE
Signature Resistance –1.5V V
IN
9.5V, V
OUT
Tied to GND, 23.25 26.00 k
IEEE 802.3af 2-Point Measurement (Notes 4, 5)
V
PG_OUT
Power Good Output Low Voltage I = 1mA, V
IN
= –48V, PWRGD Referenced to V
IN
0.5 V
Power Good Trip Point V
IN
= –48V, Voltage Between V
IN
and V
OUT
(Note 9)
V
PG_THRES_FALL
V
OUT
Falling 1.3 1.5 1.7 V
V
PG_THRES_RISE
V
OUT
Rising 2.7 3.0 3.3 V
I
PG_LEAK
Power Good Leakage V
IN
= 0V, PWRGD FET Off, V
PWRGD
= 57V 1µA
R
ON
On-Resistance I = 300mA, V
IN
= – 48V, Measured from V
IN
to V
OUT
1.0 1.6
(Note 9) 2.0
I
OUT_LEAK
V
OUT
Leakage V
IN
= 0V, Power MOSFET Off, V
OUT
= 57V (Note 10) 150 µA
I
LIMIT
Input Current Limit V
IN
= –48V, V
OUT
= –43V (Note 11) 300 350 400 mA
I
LIMIT_WARM
Overtemperature Input Current Limit (Note 11) 188 mA
T
OVERTEMP
Overtemperature Trip Temperature (Note 11) 120 °C
T
SHUTDOWN
Thermal Shutdown Trip Temperature (Note 11) 140 °C
LTC4257
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Input Current vs Input Voltage
INPUT VOLTAGE (V)
0
INPUT CURRENT (mA)
1
2
3
–45 –55
4257 G04
–60–40 –50
EXCLUDES ANY LOAD CURRENT
TA = 25°C
Normalized UVLO Threshold
vs Temperature
TYPICAL PERFOR A CE CHARACTERISTICS
UW
VOUT Leakage Current
Input Current vs Input Voltage
INPUT VOLTAGE (V)
0
0
INPUT CURRENT (mA)
10
20
30
40
50
–10 20 –30 40
4257 G01
–50 –60
CLASS 4
CLASS 3
CLASS 2
CLASS 1
CLASS 0
TA = 25°C
INPUT VOLTAGE (V)
0
0
INPUT CURRENT (mA)
0.1
0.2
0.3
0.4
0.5
–2 –4 –6 –8
4357 G02
–10
TA = 25°C
INPUT VOLTAGE (V)
–12
9.0
INPUT CURRENT (mA)
9.5
10.5
11.0
11.5
–14 –16
4257 G03
10.0
–18 –20 –22
12.0
85°C
–40°C
CLASS 1 OPERATION
Input Current vs Input Voltage
25k Detection Range Input Current vs Input Voltage
INPUT VOLTAGE (V)
–1
22
V1:
V2:
SIGNATURE RESISTANCE (k)
23
25
26
27
–3 –5
4257 G05
24
–7 –9
6 –10
–2 –4 –8
28
RESISTANCE =
DIODES: S1B
TA = 25°C
=
V
I
V2 – V1
I2 – I1
IEEE UPPER LIMIT
IEEE LOWER LIMIT
LTC4257 + 2 DIODES
LTC4257 ONLY
Signature Resistance
vs Input Voltage
TEMPERATURE (°C)
–40
–2
NORMALIZED UVLO THRESHOLD (%)
–1
0
1
2
–20 0 20 40
4257 G06
60 80
APPLICABLE TO TURN-ON
AND TURN-0FF THRESHOLDS
Power Good Output Low Voltage
vs Current
CURRENT (mA)
0
V
PG_OUT
(V)
2
3
8
4257 G07
1
024610
4T
A
= 25°C
V
OUT
PIN VOLTAGE (V)
0
0
V
OUT
CURRENT (µA)
30
60
120
90
20 40
42571 G09
60
V
IN
= 0V
T
A
= 25°C
Current Limit vs Input Voltage
INPUT VOLTAGE (V)
–40
CURRENT LIMIT (mA)
345
355
–60
4257 G09
335
325 –45 –50 –55
375
365
V
OUT
= V
IN
+ 5V
85°C
25°C
–40°C
LTC4257
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NC (Pin 1): No Connect.
R
CLASS
(Pin 2): External Class Select Input. Used to set the
current the LTC4257 maintains during classification. Con-
nect a resistor between R
CLASS
and V
IN
(see Table 2).
NC (Pin 3): No Connect.
V
IN
(Pin 4): Power Input. Tie to system –48V through the
input diode bridge.
V
OUT
(Pin 5): Power Output. Supplies –48V to the PD load
through an internal power MOSFET that limits input cur-
rent. V
OUT
is high impedance until the input voltage rises
above the turn-on UVLO threshold. Above the UVLO
threshold the output is current limited to 350mA.
PWRGD (Pin 6): Power Good Output, Open-Drain. Signals
that the LTC4257 MOSFET is fully on. Low impedance
indicates power is good. PWRGD is high impedance
during detection, classification and in the event of a
thermal overload. PWRGD is referenced to V
IN
.
NC (Pin 7): No Connect
GND (Pin 8): Ground. Tie to system ground and to power
return through the input diode bridge.
UU
U
PI FU CTIO S
BLOCK DIAGRA
W
4257 BD
V
IN
BOLD LINE INDICATES HIGH CURRENT PATH
V
OUT
+
8
54
NC 3
R
CLASS
2
NC
PWRGD
GND
7NC
1
6
CONTROL
CIRCUITS
INPUT
CURRENT
LIMIT
350mA
POWER GOOD
CLASSIFICATION
CURRENT SOURCE
1.237V
EN
0.3
+
EN 25k SIGNATURE
RESISTOR
LTC4257
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The LTC4257 is intended for use as the front end of a
Powered Device (PD) designed to IEEE 802.3af draft
standard. The LTC4257 includes a trimmed 25k signature
resistor, classification current source, and an inrush cur-
rent limit circuit. With these functions integrated into the
LTC4257, the signature and power interface for a PD that
meets all the requirements of IEEE 802.3af can be built
with a minimum of external components.
Using an LTC4257 for the power and signature interface
functions of a PD provides several advantages. The
LTC4257 current limit circuit includes an onboard, 100V,
400mA power MOSFET with low leakage. This onboard
low leakage MOSFET avoids the possibility of corrupting
the 25k signature resistor while also saving board space
and cost. In addition, the IEEE 802.3af inrush current limit
requirement causes large transient power dissipation in
the PD; the LTC4257 manages this turn-on sequence
through the use of smart thermal protection circuitry. The
LTC4257 is designed to allow multiple turn-on sequences
without overheating the miniature 8-lead package. In the
event of excessive power cycling, the LTC4257 provides
thermally activated current-limit reduction to keep the
onboard power MOSFET within its safe operating area.
Operation
The LTC4257 has several modes of operation depending
on the applied input voltage as shown in Figure 1 and
summarized in Table 1. These various modes satisfy the
requirements defined in the IEEE 802.3af specification.
The input voltage is applied to the V
IN
pin and is with
reference to the GND pin. This input voltage is always
negative. To avoid confusion, voltages in this data sheet
are always referred to in terms of absolute magnitude.
Terms such as
maximum negative voltage
refer to the
largest negative voltage and a
rising negative voltage
refers to a voltage that is becoming more negative. Refer-
ences to electrical parameters in this applications section
use the nominal value. Refer to the Electrical Characteris-
tics section for the range of values a particular parameter
will have.
DETECTION V1
CLASSIFICATION
UVLO
TURN-ON
UVLO
OFF
POWER
BAD
UVLO
OFF
UVLO
ON
UVLO
TURN-OFF
τ = RLOAD C1
PWRGD TRACKS
VIN
DETECTION V2
–10
TIME
–20
–30
VIN (V)
–40
–50
–10
TIME
–20
–30
VOUT (V)
–40
–50
–10
TIME
–20
–30
PWRGD (V)
–40
–50
ICLASS
PD CURRENT
ILIMIT
dV
dt
ILIMIT
C1
=
POWER
BAD
POWER
GOOD
DETECTION I1
CLASSIFICATION
ICLASS
DETECTION I2
LOAD CURRENT, ILOAD
CURRENT
LIMIT, ILIMIT
4257 F01
ICLASS DEPENDENT ON RCLASS SELECTION
ILIMIT = 350mA (NOMINAL)
I1 = V1 – 2 DIODE DROPS
25k
ILOAD = VIN
RLOAD
I2 = V2 – 2 DIODE DROPS
25k
GND
2
PSE
IIN 8
6
5
R9 RLOAD
RCLASS VOUT
C1
GND
4
RCLASS
PWRGD
LTC4257
VOUT
VIN
VIN
Figure 1. Output Voltage, PWRGD and PD Current
as a Function of Input Voltage
APPLICATIO S I FOR ATIO
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LTC4257
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Table 1. LTC4257 Operational Mode
as a Function of Input Voltage
INPUT VOLTAGE
(V
IN
with RESPECT to GND) LTC4257 MODE OF OPERATION
0V to –1.4V Inactive
1.5V to –10V 25k Signature Resistor Detection
11V to –12.4V Classification Load Current Ramps up from
0% to 100%
12.5V to UVLO* Classification Load Current Active
UVLO* to –57V Power Applied to PD Load
*UVLO includes hysteresis.
Rising input threshold 39.2V
Falling input threshold 30.5V
Series Diodes
The IEEE 802.3af defined operating modes for a PD
reference the input voltage at the RJ45 connector on the
PD. However, PD circuitry must include diode bridges
between the RJ45 connector and the LTC4257 (Figure 2).
The LTC4257 takes this into account by compensating for
these diode drops in the threshold points for each range of
operation. Since the voltage ranges specified in the LTC4257
electrical specifications are with respect to the IC pins for
both the signature and classification ranges, the LTC4257
lower end extends two diode drops below the IEEE 802.3af
specification. A similar adjustment is made for the UVLO
voltages.
Figure 2. PD Front End Using Diode Bridges on Main and Spare Inputs
RX
6
RX
+
3
TX
2
TX
+
RJ45 T1
POWERED DEVICE (PD)
INTERFACE
AS DEFINED
BY IEEE 802.3af
4257 F02
1
7
8
5
4
SPARE
SPARE
+
TO PHY
BR2
BR1
GND 8
4
D3
LTC4257
V
IN
Detection
During detection, the PSE will apply a voltage in the range
of –2.8V to –10V on the cable and look for a 25k signature
resistor. This identifies the device at the end of the cable
as a PD. With the terminal voltage in this range, the LTC4257
connects an internal 25k resistor between GND and the V
IN
pins. This precision, temperature compensated resistor
presents the proper characteristics to alert the Power
Sourcing Equipment (PSE) at the other end of the cable that
a PD is present and desires power to be applied.
The power applied to a PD is allowed to use either of two
polarities and the PD must be able to accept this power so
it is common to install a diode bridge on the input. The
LTC4257 is designed to compensate for the voltage and
resistance effects of these two series diodes. The signa-
ture range extends below the IEEE range to accommodate
the voltage drop of the diodes. The IEEE specification
requires the PSE to use a V/I measurement technique
to keep the DC offset of these diodes from affecting the
signature resistance measurement. However, the diode
resistance appears in series with the signature resistor
and must be included in the overall signature resistance
of the PD. The LTC4257 compensates for the two series
diodes in the signature path by offsetting the resistance
so that a PD built using the LTC4257 will meet the IEEE
requirements.
APPLICATIO S I FOR ATIO
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LTC4257
8
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Measured Current and Measured Voltage. The IEEE has
since removed the Measured Voltage method from the
specification. The LTC4257 is compatible with the IEEE
802.3af standard and also works with the obsolete Mea-
sured Voltage method.
In the Measured Current method (Figure 3), the PSE
presents a fixed voltage between –15.5V and –20V to the
PD. With the input voltage in this range, the LTC4257
asserts a load current from the GND pin through the
R
CLASS
resistor. The magnitude of the load current is set
with the selection of the R
CLASS
resistor. The resistor value
associated with each class is shown in Table 2.
In the Measured Voltage method (Figure 4), the PSE drives
a current into the PD and monitors the voltage across the
PD terminals. The PSE current steps between classifica-
tion load current values in order to classify the PD under
test. For PSE probe currents below the PD load current, the
LTC4257 will keep the PD terminal voltage below the
classification voltage range. For PSE probe currents above
the PD load current, the LTC4257 will force the PD terminal
voltage above the classification voltage range.
During classification, a moderate amount of power is
dissipated in the LTC4257. IEEE 802.3af limits the classi-
fication time to 75ms. The LTC4257 is designed to handle
the power dissipation for this time period. If the PSE
Classification
Once the PSE has detected a PD, the PSE may optionally
classify the PD. Classification provides a method for more
efficient allocation of power by allowing the PSE to identify
lower-power PDs and allocate less power for these de-
vices. IEEE 802.3af defines five classes (Table 2) with
varying power levels. The designer selects the appropriate
classification based on the power consumption of the PD.
For each class, there is an associated load current that the
PD asserts onto the line during classification probing. The
PSE measures the PD load current to determine the proper
classification and PD power requirements.
Table 2. Summary of IEEE 802.3af Power Classifications and
LTC4257 RCLASS Resistor Selection
MAXIMUM NOMINAL LTC4257
POWER LEVELS CLASSIFICATION R
CLASS
AT INPUT OF PD LOAD CURRENT RESISTOR
CLASS USAGE (W) (mA) (, 1%)
0 Default 0.44 to 12.95 <5 Open
1 Optional 0.44 to 3.84 10.5 124
2 Optional 3.84 to 6.49 18.5 68.1
3 Optional 6.49 to 12.95 28 45.3
4 Reserved Reserved* 40 30.9
*Class 4 is currently reserved and should not be used.
Early revisions of the IEEE 802.3af draft specification
defined two methods that a PSE could use in order to
perform PD classification. These methods are known as
Figure 3. IEEE 802.3af Measured-Current Method
of Classification Probing
Figure 4. IEEE 802.af Measured-Voltage Method
of Classification Probing
APPLICATIO S I FOR ATIO
WUUU
GND
R
CLASS
V
IN
82
4
LTC4257
CONSTANT
LOAD
CURRENT
INTERNAL
TO LTC4257
4257 F03
R
CLASS
CURRENT PATH
V
PD
PSE
PSE CURRENT MONITOR
PSE
PROBING
VOLTAGE
SOURCE
15.5V TO –20.5V
GND
R
CLASS
V
IN
82
4
LTC4257
CONSTANT
LOAD
CURRENT
INTERNAL
TO LTC4257
4257 F04
R
CLASS
CURRENT PATH
V
PDPSE
PSE
VOLTAGE
MONITOR
PSE
PROBING
CURRENT
SOURCE
IF PSE PROBING CURRENT < LTC4257 LOAD CURRENT, PD TERMINAL VOLTAGE IS < 15V
IF PSE PROBING CURRENT > LTC4257 LOAD CURRENT, PD TERMINAL VOLTAGE IS > 20V
LTC4257
9
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probing exceeds 75ms, the LTC4257 may overheat. In this
situation, the thermal protection circuit will engage and
disable the classification current source in order to protect
the part. The LTC4257 stays in classification mode until
the input voltage rises above the UVLO turn-on voltage.
Undervoltage Lockout
I
EEE 802.3af dictates a maximum turn-on voltage of 42V
and a minimum turn-off voltage of 30V for the PD. In
addition, the PD must maintain large on-off hysteresis to
prevent resistive losses in the wiring between the PSE and
the PD from causing start-up oscillation. The LTC4257
incorporates an undervoltage lockout (UVLO) circuit that
monitors line voltage to determine when to apply power
to the PD load (Figure 5). Before power is applied to the
load, the VOUT pin is high impedance and at ground
potential since there is no charge on capacitor C1. When
the input voltage rises above the UVLO turn-on threshold,
the LTC4257 removes the classification load current and
turns on the internal power MOSFET. C1 charges up under
LTC4257 current limit control and the VOUT pin transitions
from 0V to VIN. This sequence is shown in Figure 1. The
LTC4257 includes a hysteretic UVLO circuit that keeps
power applied to the load until the input voltage falls
below the UVLO turn-off threshold. Once the input voltage
drops below –30V, the internal power MOSFET is turned
off and the classification load current is re-enabled.
C1 will discharge through the PD circuitry and the VOUT
pin will go to a high impedance state.
Input Current Limit
IEEE 802.3af specifies a maximum inrush current and also
specifies a minimum load capacitor between the GND and
V
OUT
pins. To control turn-on surge current in the system,
the LTC4257 integrates a current limit circuit with the
onboard power MOSFET and sense resistor to provide a
complete inrush control circuit without additional external
components. The LTC4257 limits input current to less
than the 400mA maximum specified by 802.3af, allowing
the load capacitor to ramp up to the line voltage in a
controlled manner. During this ramp up, a large amount of
power is dissipated in the power MOSFET. The LTC4257
Figure 5. LTC4257 Undervoltage Lockout
APPLICATIO S I FOR ATIO
WUUU
GND C1
5µF
MIN
V
IN
8
4V
OUT
5
LTC4257
4257 F05
TO
PSE UNDERVOLTAGE
LOCKOUT
CIRCUIT
PD
LOAD
CURRENT-LIMITED
TURN ON
+
INPUT LTC4257
VOLTAGE POWER MOSFET
0V TO UVLO* OFF
>UVLO* ON
*UVLO INCLUDES HYSTERESIS
RISING INPUT THRESHOLD 39.2V
FALLING INPUT THRESHOLD 30.5V
LTC4257
10
4257fb
is designed to accept this thermal load and is thermally
protected to avoid damage to the onboard power MOSFET.
Note that the PD designer must ensure that the PD steady-
state power consumption falls within the limits shown in
Table 2.
Power Good
The LTC4257 includes a power good circuit (Figure 6) that
is used to indicate to the PD circuitry that load capacitor C1
is fully charged and that the PD can start DC/DC converter
operation. The power good circuit monitors the voltage
across the internal power MOSFET and PWRGD is as-
serted when the voltage drops below 1.5V. The power
good circuit includes a large amount of hysteresis to allow
the LTC4257 to operate near the current limit point without
inadvertently disabling PWRGD. The MOSFET voltage
must increase to 3V before PWRGD is disabled.
If a sudden increase in voltage appears on the input line,
this voltage step will be transferred through capacitor C1
and appear across the power MOSFET. The response of
the LTC4257 will depend on the magnitude of the voltage
step, the rise time of the step, the value of capacitor C1 and
the DC load. For fast rising inputs, the LTC4257 will
attempt to quickly charge capacitor C1 using an internal
secondary current limit circuit. In this scenario, the PSE
current limit should provide the overall limit for the circuit.
For slower rising inputs, the 350mA current limit in the
LTC4257 will set the charge rate of capacitor C1. In either
case, the PWRGD signal may go inactive briefly while the
capacitor is charged up to the new line voltage. In the
design of a PD, it is necessary to determine if a step in the
input voltage will cause the PWRGD signal to go inactive
and how to respond to this event. In some designs, the
charge on C1 is sufficient to power the PD through this
event. In this case, it may be desirable to filter the PWRGD
signal so that intermittent power bad conditions are
ignored. Figure 10 demonstrates methods to insert a
lowpass filter on the power good interface.
For PD designs that use a large load capacitor and also
consume a lot of power, it is important to delay activation
of the PD circuitry with the PWRGD signal. If the PD cir-
cuitry is not disabled during the current-limited turn-on se-
quence, the PD circuitry will rob current intended for charg-
ing up the load capacitor and create a slow rising input,
possibly causing the LTC4257 to go into thermal shutdown.
The PWRGD pin connects to an internal open-drain, 100V
transistor capable of sinking 1mA. Low impedance indi-
cates power is good. PWRGD is high impedance during
signature and classification probing and in the event of a
thermal overload.
During turn-off, PWRGD is deactivated when the input
voltage drops below 30V. In addition, PWRGD may go
active briefly at turn-on for fast rising input waveforms.
PWRGD is referenced to the V
IN
pin and when active will
be near the V
IN
potential. The PD DC/DC converter will
typically be referenced to V
OUT
and care must be taken to
ensure that the difference in potential of the PWRGD signal
does not cause any detrimental effects. Use of diode clamp
D6, as shown in Figure 10, will alleviate any problems.
Figure 6. LTC4257 Power Good
APPLICATIO S I FOR ATIO
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PWRGD
C1
5µF
MIN
V
IN
6
4V
OUT
1.125V
R9
100k
5
300k
300k
LTC4257
THERMAL SHUTDOWN
UVLO
4257 F06
TO
PSE
PD
LOAD
SHDN
+
+
+
LTC4257
11
4257fb
Thermal Protection
The LTC4257 includes smart thermal protection in order
to provide full device functionality in a miniature package
while maintaining safe operating temperatures. Several
factors create the possibility for tremendous power
dissi
pation within the LTC4257. IEEE 802.3af mandates
that inrush current be limited to less than 400mA while
standard telecom power can be as high as 57V. At turn on,
before the load capacitor has charged up, the instanta-
neous power dissipated by the LTC4257 can be over 20W.
As the load capacitor charges up, the power dissipation in
the LTC4257 will decrease until it reaches a steady-state
value dependent on the DC load current. The size of the
load capacitor determines how fast the power dissipation
in the LTC4257 subsides. At room temperature, the
LTC4257 can handle load capacitors as large as 800µF
without going into thermal shutdown. With a large load
capacitor like this, the LTC4257 die temperature will
increase by about 50°C during a single turn-on sequence.
If for some reason power were removed from the part and
then quickly reapplied so that the LTC4257 had to charge
up the load capacitor again, the temperature rise would be
excessive if safety precautions were not implemented.
The LTC4257 protects itself from thermal damage by
monitoring the die temperature. If the die temperature
exceeds the overtemperature trip point, the part switches
to a half-power mode where the current limit is set to 50%
of its normal level. This reduces power dissipation and
helps prevent further heating. If the part continues to heat
up and reaches the shutdown temperature, the current is
reduced to zero and very little power is dissipated in the
part until it cools below the overtemperature set point. The
LTC4257 current limit will continue switching between
0%, 50% and 100% current levels (Figure 7) until the load
capacitor is fully charged.
If the PD is designed to operate at a high ambient tempera-
ture and with the maximum allowable supply (57V), there
will be a limit to the size load capacitor that can be charged
up before the LTC4257 reaches the overtemperature trip
point. Hitting the overtemperature trip point intermittently
does not harm the LTC4257, but it will delay completion of
capacitor charging. Capacitors up to 200µF can be charged
without a problem.
During classification, excessive heating of the LTC4257
can occur if the PSE violates the 75ms probing time limit.
To protect the LTC4257, the thermal protection circuitry
will disable classification current if the die temperature
exceeds the overtemperature trip point. When the die
cools down below the trip point, classification current is
re-enabled.
Once the LTC4257 has charged up to the load capacitor
and the PD is powered and running, there will be some
residual heating due to the DC load current of the PD
flowing through the internal MOSFET. In some applica-
tions, the LTC4257 power dissipation may be significant
and if dissipated in the S8 package, excessive package
heating could occur. This problem can be solved with the
use of the DD package which has superior thermal perfor-
mance. The DD package includes an exposed pad that
should be soldered to an isolated heatsink on the printed
circuit board.
Figure 7. Smart Thermal Protection State Diagram
APPLICATIO S I FOR ATIO
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4257 F07
T < 120°C
T < 120°C
T > 120°C
T > 140°C
100%
CURRENT
UVLO
TURN ON
50%
CURRENT
0%
CURRENT
LTC4257
12
4257fb
EXTERNAL INTERFACE AND COMPONENT SELECTION
Transformer
Nodes on an Ethernet network commonly interface to the
outside world via an isolation transformer (Figure 8). For
powered devices, the isolation transformer must include
a center tap on the media (cable) side. Proper termination
is required around the transformer to provide correct
impedance matching and to avoid radiated and conducted
emissions. Transformer vendors such as Pulse, Bel Fuse,
Tyco and others (Table 3) can provide assistance with
selection of an appropriate isolation transformer and
proper termination methods. These vendors have trans-
formers specifically designed for use in PD applications.
Table 3. Power over Ethernet Transformer Vendors
VENDOR CONTACT INFORMATION
Pulse Engineering 12220 World Trade Drive
San Diego, CA 92128
Tel: 858-674-8100
FAX: 858-674-8262
http://www.pulseeng.com/
Bel Fuse Inc. 206 Van Vorst Street
Jersey City, NJ 07302
Tel: 201-432-0463
FAX: 201-432-9542
http://www.belfuse.com/
Tyco Electronics 308 Constitution Drive
Menlo Park, CA 94025-1164
Tel: 800-227-7040
FAX: 650-361-2508
http://www.circuitprotection.com/
Diode Bridges
IEEE 802.3af allows power wiring in either of two configu-
rations on the TX/RX wires, plus power can be applied to
the PD via the spare wire pair in the RJ45 connector. The
PD is required to accept power in either polarity on both
the main and spare inputs, therefore it is common to install
diode bridges on both inputs in order to accommodate the
different wiring configurations. Figure 8 demonstrates an
implementation of these diode bridges. The specification
also mandates that the leakage back through the unused
bridge be less than 28µA when the PD is powered with
57V.
The IEEE standard includes an AC impedance requirement
in order to implement the AC disconnect function. Capaci-
tor C14 in Figure 8 is used to meet this AC impedance
requirement. A 0.1µF capacitor is recommended for this
application.
The LTC4257 has several different modes of operation
based on the voltage present between the V
IN
and GND
pins. The forward voltage drop of the input diodes in a PD
design subtracts from the input voltage and will affect the
transition point between modes. When using the LTC4257,
it is necessary to pay close attention to this forward
voltage drop. Selection of oversized diodes will help keep
the PD thresholds from exceeding IEEE specifications.
The input diode bridge of a PD can consume 4% of the
avialable power in some applications. It may be desirable
to use Scottky diodes in order to reduce this power loss.
APPLICATIO S I FOR ATIO
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Figure 8. PD Front End with Isolation Transformer, Diode Bridges and Capacitor
16
14
15
1
3
2
RX
6
RX+
3
TX
2
TX+
RJ45
T1
PULSE H2019
4257 F08
1
7
8
5
4
11
9
10
6
8
7
D3
SMAJ58A
TVS
BR1
DF01SA
BR2
DF01SA
TO PHY
GND 8
54
LTC4257 C1
VIN VOUT VOUT
SPARE
SPARE+
C14
0.1µF
100V
LTC4257
13
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APPLICATIO S I FOR ATIO
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However, if the standard diode bridge is replaced with a
Schottky bridge, the transition points between modes will
be affected. The application circuit (Figure 11) shows a
technique for using Schottky diodes while maintaining
proper threshold points to meet IEEE 802.3af compliance.
Auxiliary Power Source
In some applications, it may be desirable to power the PD
from an auxiliary power source such as a wall transformer.
The auxiliary power can be injected into the PD at several
locations and various trade-offs exist. Power can be
injected at the 3.3V or 5V output of the isolated power
supply with the use of a diode ORing circuit. This method
accesses the internal circuits of the PD after the isolation
barrier and therefore meets the 802.3af isolation safety
requirements for the wall transformer jack on the PD.
Power can also be injected into the PD interface portion of
the LT4257. In this case, it is necessary to ensure the user
cannot access the terminals of the wall transformer jack
on the PD since this would compromise the 802.3af
isolation safety requirements. Figure 9 demonstrates three
methods of diode ORing external power into a PD. Option
1 inserts power before the LTC4257 while options 2 and 3
insert power after the LTC4257.
If power is inserted before the LTC4257 (option 1), it is
necessary for the wall transformer to exceed the LTC4257
UVLO turn-on requirement and limit the maximum voltage
to 57V. This option provides input current limiting for the
transformer, provides valid power good signaling and sim-
plifies power priority issues. As long as the wall transformer
applies power to the PD before the PSE, it will take priority
and the PSE will not power up the PD because the wall power
will corrupt the 25k signature. If the PSE is already pow-
ering the PD, the wall transformer power will be in parallel
with the PSE. In this case, priority will be given to the higher
supply voltage. If the wall transformer voltage is higher, the
PSE should remove line voltage since no current will be
drawn from the PSE. On the other hand, if the wall trans-
former voltage is lower, the PSE will continue to supply
power to the PD and the wall transformer power will not be
used. Proper operation should occur in either scenario.
Auxiliary power can be applied after the LTC4257 as shown
in option 2. In this configuration, the wall transformer does
not need to exceed the LTC4257 turn-on UVLO requirement;
however, it is necessary to include diode D9 to prevent the
transformer from applying power to the LTC4257. The
transformer voltage requirements will be governed by the
needs of the PD switcher and may exceed 57V. However,
power priority issues require more intervention. If the wall
transformer voltage is below the PSE voltage, then priority
will be given to the PSE power. The PD will draw power from
the PSE while the transformer will sit unused. This configu-
ration is not a problem in a PoE system. On the other hand,
if the wall transformer voltage is higher than the PSE volt-
age, the PD will draw power from the transformer. In this
situation, it is necessary to address the issue of power
cycling that may occur if a PSE is present. The PSE will detect
the PD and apply power. If the PD is being powered by the
wall transformer, then the PD will not meet the minimum
load requirement and the PSE will subsequently remove
power. The PSE will again detect the PD and power cycling
will start. With a transformer voltage above the PSE volt-
age, it is necessary to install a minimum load on the output
of the LTC4257 to prevent power cycling. Refer to the
LTC4257-1 data sheet for an alternative implementation of
option 2 which uses the Signature Disable feature.
The third option also applies power after the LTC4257, while
omitting diode D9. With the diode omitted, the transformer
voltage is applied to the LTC4257 in addition to the load.
For this reason, it is necessary to ensure that the transformer
maintain the voltage between 44V and 57V to keep the
LTC4257 in its normal operating range. The third option has
the advantage of automatically disabling the 25k signature
when the external voltage exceeds the PSE voltage.
LTC4257
14
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APPLICATIO S I FOR ATIO
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Figure 9. Auxiliary Power Source for PD
RX
6
RX
+
3
TX
2
TX
+
RJ45 T1
1
7
8
5
4
SPARE
+
SPARE
+
ISOLATED
WALL
TRANSFORMER
TO PHY
GND 8
45
OPTION 1: AUXILIARY POWER INSERTED BEFORE LTC4257
OPTION 2: AUXILIARY POWER INSERTED AFTER LTC4257
V
IN
V
OUT
44V TO 57V
D8
S1B
D3
SMAJ58A
TVS
C1 PD
LOAD
C14
0.1µF
100V
RX
6
RX
+
3
TX
2
TX
+
RJ45 T1
1
7
8
5
4
SPARE
+
SPARE
+
ISOLATED
WALL
TRANSFORMER
TO PHY
GND
LTC4257
LTC4257
BR2
DF01SA
~
~
+
BR1
DF01SA
~
~
+
BR1
DF01SA
~
~
+
8
45
V
IN
V
OUT
42571 F09
D10
S1B
D3
SMAJ58A
TVS
C1
MINIMUM
LOAD
PD
LOAD
D9
S1B
OPTION 3: AUXILIARY POWER APPLIED TO LTC4257 AND PD LOAD
RX
6
RX
+
3
TX
2
TX
+
RJ45 T1
1
7
8
5
4
SPARE
+
SPARE
+
ISOLATED
WALL
TRANSFORMER
TO PHY
44V TO 57V
GND
LTC4257
8
45
V
IN
V
OUT
D10
S1B
D3
SMAJ58A
TVS
C1 PD
LOAD
C14
0.1µF
100V
C14
0.1µF
100V
BR2
DF01SA
~
~
+
BR1
DF01SA
~
~
+
BR2
DF01SA
~
~
+
LTC4257
15
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Classification Resistor Selection (R
CLASS
)
IEEE 802.3af allows classifying PDs into four distinct
classes with class 4 being reserved for future use (Table 2).
An external resistor connected from R
CLASS
to V
IN
(Fig-
ure 3) sets the value of the classification current. The
designer should determine which power category the PD
falls into and then select the appropriate value of R
CLASS
from Table 2. If a unique classification current is required,
the value of R
CLASS
can be calculated as:
R
CLASS
= 1.237V/(I
DESIRED
– I
IN_CLASS
)
where I
IN_CLASS
is the LTC4257 IC supply current during
classification and is given in the electrical specifications.
The R
CLASS
resistor must be 1% or better to avoid
degrading the overall accuracy of the classification cir-
cuit. Resistor power dissipation will be 50mW maximum
and is transient so heating is typically not a concern. In
order to maintain loop stability, the layout should
minimize capacitance at the R
CLASS
node. The classifica-
tion circuit can be disabled by floating the R
CLASS
pin. The
R
CLASS
pin should not be shorted to V
IN
as this would
force the LTC4257 classification circuit to attempt to
source very large currents. In this case, the LTC4257 will
quickly go into thermal shutdown.
Power Good Interface
The PWRGD signal is controlled by a high voltage, open-
drain transistor. Examples of active-high and active-low
interface circuits for controlling the PD load are shown in
Figure 10.
In some applications it is desirable to ignore intermittent
power bad conditions. This can be accomplished by
including capacitor C15 in Figure 10 to form a lowpass
filter. With the components shown, power bad conditions
less than about 200µs will be ignored. Conversely, in other
applications it may be desirable to delay assertion of
PWRGD to the PD load. The PWRGD signal can be delayed
with the addition of capacitor C17 in Figure 10.
APPLICATIO S I FOR ATIO
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Figure 10. Power Good Interface Examples
GND
C1
5µF
100V
V
IN
8
4
–48V V
OUT
5
*C15 OPTIONAL TO FILTER PWRGD.
SEE APPLICATIONS INFORMATION
LTC4257
PD
LOAD
SHDN
PWRGD 6
D6
5.1V
MMBZ5231B
C15*
0.047µF
10V
R9
100k
R9
100k
R18
10k
R18
10k
+
GND
C1
5µF
100V
Q1
FMMT2222
D6
MMBD4148
V
IN
8
4
48V V
OUT
5
LTC4257
4257 F10
PD
LOAD
RUN
C17*
PWRGD 6
INTERNAL
PULLUP
+
ACTIVE-LOW ENABLE, 5.1V SWING
ACTIVE-HIGH ENABLE FOR RUN PIN WITH INTERNAL PULLUP
TO
PSE
TO
PSE
C15*
0.047µF
10V
*C15 AND C17 OPTIONAL TO FILTER PWRGD.
SEE APPLICATIONS INFORMATION
LTC4257
16
4257fb
Load Capacitor
IEEE 802.3af requires that the PD maintain a minimum
load capacitance of 5µF. It is permissible to have a much
larger load capacitor and the LTC4257 can charge very
large load capacitors before thermal issues become a
problem. However, the load capacitor must not be too
large or the PD design may violate two IEEE 802.3af
requirements. The LTC4257 goes into current limit at
turn-on and charges the load capacitor with between
300mA and 400mA. The IEEE specification allows this
level of inrush current for up to 50ms. Therefore, it is
necessary that the PD complete charging of the capacitor
within the 50ms time limit. With a maximum input voltage
of –57V, these conditions limit the size of the load
capacitor to 250µF.
Very small output capacitors (10µF) will charge very
quickly in current limit. The rapidly changing voltage at
the output may reduce the current limit temporarily,
causing the capacitor to charge at a somewhat reduced
rate. Conversely, charging very large capacitors may
cause the current limit to increase slightly. In either case,
once the output voltage reaches its final value, the input
current limit will be restored to its nominal value.
If the load capacitor is too large there can be an additional
problem with inadvertent power shutdown by the PSE.
Consider the following scenario. If the PSE is running at
APPLICATIO S I FOR ATIO
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57V (maximum allowed) and the PD has been detected
and powered up, the load capacitor will be charged to
nearly – 57V. If for some reason the PSE voltage suddenly
is reduced to – 44V (minimum allowed), the input diodes
will reverse bias and PD power will be supplied solely by
the load capacitor. Depending on the size of the load
capacitor and the DC load of the PD, the PD will not draw
any power from the PSE for a period of time. If this period
of time exceeds the IEEE 802.3af 300ms disconnect
delay, the PSE may remove power from the PD. For this
reason, it is necessary to evaluate the load capacitance
and load current to ensure that inadvertent shutdown
cannot occur.
Maintain Power Signature
In an IEEE 802.3af system, the PSE uses the
maintain
power signature
(MPS) to determine if a PD continues to
require power. The MPS requires the PD to periodically
draw at least 10mA and also have an AC impedance less
than 26.25k in parallel with 0.05µF. The PD application
circuits shown in this data sheet meet the requirements
necessary to maintain power. If either the DC current is
less than 10mA or the AC impedance is above 26.25k,
the PSE might disconnect power. The DC current must be
less than 5mA and the AC impedance must be above 2M
to guarantee power will be removed.
LTC4257
17
4257fb
APPLICATIO S I FOR ATIO
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Layout
The LTC4257 is relativity immune to layout problems.
Excessive parasitic capacitance on the R
CLASS
pin should
be avoided. If using the DD package, include an electrically
isolated heat sink to which the exposed pad on the bottom
of the package can be soldered. For optimal thermal
performance, make the heat sink as large as possible.
Voltages in a PD can be as large as –57V, so high voltage
layout techniques should be employed.
The load capacitor connected between Pins 5 and 8 of the
LTC4257 can store significant energy when fully charged.
The design of a PD must ensure that this energy is not
inadvertently dissipated in the LTC4257. The polarity-
protection diode(s) prevent an accidental short on the
cable from causing damage. However, if the V
IN
pin is
shorted to the GND pin inside the PD while the load
capacitor is charged, current will flow through the para-
sitic body diode of the internal MOSFET and may cause
permanent damage to the LTC4257.
Input Surge Suppression
The LTC4257 is specified to operate with an absolute
maximum voltage of –100V and is designed to tolerate
brief overvoltage events. However, the pins that interface
to the outside world (primarily V
IN
and GND) can routinely
see peak voltages in excess of 10kV. To protect the
LTC4257, it is highly recommended that a transient volt-
age suppressor be installed between the bridge and the
LTC4257 (D3 in Figure 2).
LTC4257
18
4257fb
TYPICAL APPLICATIO
U
1
5
4
1
3
2
RX
SPARE
6
RX
+
3
TX
2
TX
+
J2
IN
FROM
PSE
T1
RJ45
1
7
8
5
4
6
8
7
TXOUT
+
OUT
TO PHY
TXOUT
SPARE
+
RXOUT
+
RXOUT
16
14
15
11
9
10
C19
47pF
C13
470pF
V
OUT+
V
OUT
R24
100k R28
10k
R23
3.65k
1%
R13
30.1k
1%
R17
10k
R14
100k
R11
10k
R10
62k
R25
62k
R26
10k
R27
62k C20
0.47µF
C21
0.1µF
NOTES: UNLESS OTHERWISE SPECIFIED
1. ALL RESISTORS ARE 5%
2. ALL CAPACITORS ARE 25V
3. SELECT R
CLASS
FOR CLASS 1-4 OPERATION. REFER
TO DATA SHEET APPLICATIONS INFORMATION SECTION
4. CONNECT TO CHASSIS GROUND
C4 TO C6: TDK C4532X5R0J107M
C2, C23: AVX 1808GC102MAT
D1, D7: MM3Z12VT1
D3: MMBD1505
D9 TO D12, D14 TO D16: DIODES INC., B1100
L1: COILCRAFT D01608C-472
T1: PULSE H2019
T2: PULSE PB2134
T3: PULSE PA0184
OSCAP SFSTt
ON
ENDLYMINENAB
LT1737CGN
R
OCMP
V
CC
R
CMPC
UVLO GATE
SGND PGND
V
C
FB
3V
OUT
I
SENSE
C22
680pF
0603 D8
BAT54
D5
B0540W
C17
3300pF
R15
0.22
1/2W
1%
R4
10k
T2
SEPARATING
LINE
FOR GROUND
PLANE
T3
8
D7
12V
1
C12
0.1µF
50V
C10
4.7µF
35V
R16
330
C16
0.1µF
50V
C23
1000pF
2kV
9
10
3
5
4
C18
1nF
R18
100
Q6
Si7892DP
Q7
FMMT718
Q8
MMBT3904
8
11
C14
1µF
R12
47
C4 TO C6
100µF
6.3V 3.3V @ 2.8A
Q3
Si4490DY
LTC4257CDD
R
CLASS
1%
NC
R
CLASS
NC
V
IN
GND
NC
PWRGD
V
OUT
C1B
0.82µF
100V
C1C
0.82µF
100V
L1
4.7µH
Q2
MMBT3904
Q4
MMBT2907ALT1
Q5
MMBT3904
R9
100
R8
47
R6
47
C9
100pF
D2
BAT54
Q1
MMBTA06
D4
BAS21LT1
D1
12V
D3A D3B
R7
33
1/4W
C1A
10µF
100V
R5
47K
+
Q9
2N7002
D13
MMSD4148
C11
0.1µF
100V
D6
SMAJ58A
R30
75
C24
0.01µF
200V
R31
75
C25
0.01µF
200V
R1
75
C7
0.01µF
200V
R2
75
C3
0.01µF
200V
C2
1000pF
2kV
4257 TA04
D10
B1100
D12
B1100
D9
B1100
D11
B1100
D17
B1100
D16
B1100
D15
B1100
D14
B1100
3
4
4
Figure 11: PD Power Interface with 3.3V, 2.8A High Efficiency Isolated Power Supply
LTC4257
19
4257fb
S8 Package
8-Lead Plastic Small Outline (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1610)
U
PACKAGE DESCRIPTIO
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
DD Package
8-Lead Plastic DFN (3mm × 3mm)
(Reference LTC DWG # 05-08-1698)
.016 – .050
(0.406 – 1.270)
.010 – .020
(0.254 – 0.508)× 45°
0°– 8° TYP
.008 – .010
(0.203 – 0.254)
SO8 0303
.053 – .069
(1.346 – 1.752)
.014 – .019
(0.355 – 0.483)
TYP
.004 – .010
(0.101 – 0.254)
.050
(1.270)
BSC
1234
.150 – .157
(3.810 – 3.988)
NOTE 3
8765
.189 – .197
(4.801 – 5.004)
NOTE 3
.228 – .244
(5.791 – 6.197)
.245
MIN .160 ±.005
RECOMMENDED SOLDER PAD LAYOUT
.045 ±.005
.050 BSC
.030 ±.005
TYP
INCHES
(MILLIMETERS)
NOTE:
1. DIMENSIONS IN
2. DRAWING NOT TO SCALE
3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm)
3.00 ±0.10
(4 SIDES)
NOTE:
1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-1)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON TOP AND BOTTOM OF PACKAGE
0.38 ± 0.10
BOTTOM VIEW—EXPOSED PAD
1.65 ± 0.10
(2 SIDES)
0.75 ±0.05
R = 0.115
TYP
2.38 ±0.10
(2 SIDES)
14
85
PIN 1
TOP MARK
(NOTE 6)
0.200 REF
0.00 – 0.05
(DD8) DFN 1203
0.25 ± 0.05
2.38 ±0.05
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
1.65 ±0.05
(2 SIDES)2.15 ±0.05
0.50
BSC
0.675 ±0.05
3.5 ±0.05
PACKAGE
OUTLINE
0.25 ± 0.05
0.50 BSC
LTC4257
20
4257fb
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
FAX: (408) 434-0507
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2003
LT 1205 REV B • PRINTED IN USA
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PD Power Interface with 3.3V, 3A Nonisolated Power Supply
TYPICAL APPLICATIO
U
1
3
2
RX
6
RX+
3
TX
2
TX+
J1
T1
XFMR
RJ45
1
7
8
5
4
SPARE
SPARE+
6
8
7
TXOUT+
TXOUT
RXOUT+
RXOUT
TO
PHY
R12
75
R11
75
0.01µF
200V
75
C4
0.01µF
200V
C3
0.01µF
200V
C8
0.001µF
2kV
16
14
15
11
9
10
0.01µF
200V
75BR2
DF01SA
C14
0.1µF
100V
LTC4257
LTC1871
Q3
FDC2512
C1A
4.7µF
100V
Q2
FMMT625
D3
TVS
SMAJ58A
D4
MMBZ5235B
6.8V
RCLASS
1%
NC
RCLASS
NC
VIN
GND
NC
PWRGD
VOUT
RUN
ITH
FB
FREQ
MODE/SYNC
SENSE
VIN
INTVCC
GATE
GND
~+
~–
BR1
DF01SA
~+
~–
C1B
2.2µF
100V
R10
100k
RT
80.6k
1%
R14
12.4k
1%
R15
21k 1%
C6
1µF 6.3V
Q1
2N7002
CC1
1nF
RC
12k
R17
750
R13
100k
L1
1µH
R16
100
Q4
FMMT2222
D6
1N4148
R9
100k
R18
10k
+
NOTES: UNLESS OTHERWISE SPECIFIED
1. ALL RESISTOR VALUES ARE 5%
2. SELECT RCLASS FOR CLASS 1-4 OPERATION.
REFER TO DATA SHEET APPLICATIONS INFORMATION SECTION
3. CONNECT TO CHASSIS GROUND
C1A: PANASONIC ECEV2AA4R7P
C1B: TDK C5750X7R2A225KT
C8: AVX 1808GC102MAT
C9, C10, C12, C13: TDK C4532X5ROJ107
L1: LQLB2518T1ROM
T1: PULSE H2019
R5
0.1
1%
C5
4.7µF
6.3V
4
2
11
9
T2
CTX-02-15242
D5
UPS840
12
4257 TA03
10
••
C9
100µF
X5R
6.3V
C10
100µF
X5R
6.3V
VOUT+
3.3V
AT 3A
VOUT
+
+
C12
100µF
X5R
6.3V
C13
100µF
X5R
6.3V
+
+
3
2
Burst Mode is a registered trademark of Linear Technology Corporation. No R
SENSE
and ThinSOT are trademarks of Linear Technology Corporation.