GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 Features MA4E13171, 2 Case Style 1198 Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion 0.026 (0.65) 0.019 (0.48) 0.005 SQ. (0.13) TYP. 0.007 TYP. (0.18) 0.013 (0.33) 0.001 +.001 -.000 TYP. ) (0.03 +.02 -.01 Description M/A-COM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee and MA4E1319-2 series tee are gallium arsenide flip chip Schottky barrier diodes. These diodes are fabricated on OMCVD epitaxial wafers using a process designed for repeatable electrical characteristics and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. 0.004 TYP. (0.10) 0.001+.001 -.000 TYP. (0.03 +.02 -.01 ) 0.007 (0.18) POLARITY INDICATOR MA4E13181, 2 Case Style 1197 Applications The high cutoff frequency of these diodes allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The diodes can be used through 80 GHz. 0.026 0.65 0.019 0.48 0.005 SQ. (0.13) TYP. 0.004 TYP. (0.10) 0.007 TYP. (0.18) 0.013 (0.33) 0.001 +.001 -.000 TYP. ) (0.03 +.02 -.01 The MA4E1318 anti-parallel pair is designed for use in subharmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input. 0.001+.001 -.000 TYP. (0.03 +.02 -.01 ) 0.007 (0.18) ALIGNMENT INDICATOR (2 PLCS) 1. Dimensions in ( ) are in mm. 2. Unless otherwise noted, tolerance are inches .001" (millimeters .025 mm) 3. Schematic is for junction side up. Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: 1 Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V2.00 MA4E1319-11, 2 Case Style 1199 MA4E1319-21, 2 Case Style 1200 0.005 SQ. (0.13) TYP. 0.004 TYP. (0.10) 0.004 (0.10) TYP. 0.005 SQ. (0.13) TYP. 0.004 TYP. (0.10) 0.019 (0.48) 0.001 +.001 -.000 (0.03 0.014 (0.35) +.02 -.01 ) 0.001 +.001 -.000 0.028 (0.70) (0.03 +.02 -.01 ) 0.004 (0.10) TYP. 0.019 (0.48) TYP. 0.001 +.001 -.000 TYP. ) (0.03 +.02 -.01 0.014 (0.35) TYP. 0.007 (0.18) 0.001+.001 -.000 TYP. (0.03 +.02 -.01 ) 0.028 (0.70) 0.007 (0.18) ALIGNMENT INDICATOR (3 PLCS) ALIGNMENT INDICATOR (3 PLCS) 1. Dimensions in ( ) are in mm. 2. Unless otherwise noted, tolerance are inches .001" (millimeters .025 mm) 3. Schematic is for junction side up. Electrical Specifications @ TA = +25C Parameters @ Conditions Junction Capacitance 0 V @ 1 MHz Total Capacitance 0 V @ 1 MHz4 Junction Capacitance Difference Series Resistance @ +10 mA5 Forward Voltage @ +1 mA Forward Voltage Difference @ 1 mA Reverse Voltage @ -10 uA SSB Noise Figure MA4E1317 Typ. Max. 0.020 - Min. - MA4E1318 Typ. Max. 6 0.020 - MA4E1319-1 or -2 Min. Typ. Max. 6 0.020 - Symbol Cj Units pF Min. - CT pF 0.030 0.045 0.060 Cj pF - - - - 0.005 0.010 - 0.005 0.010 RS VF1 VF Ohms Volts Volts 0.60 - 4 0.70 - 7 0.80 - 0.60 - 4 0.70 0.005 7 0.80 0.010 0.60 - 4 0.70 0.005 7 0.80 0.010 VR NF Volts dB 4.5 - 7 6.57 - - 6.57 - 4.5 - 7 6.57 - 0.0306 0.0456 0.0606 0.0306 0.0456 0.0606 4. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp. 5. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 Ohms. 6. Capacitance for the MA4E1318 and MA4E1319-1 or -2 is per Schottky diode. 7. Measured at an LO frequency of 9.375 GHz, with an IF frequency of 300 MHz. LO drive level is +6 dBm for a single Schottky junction. The IF noise figure contribution (1.5 dB) is included. Specifications Subject to Change Without Notice. M/A-COM, Inc. 2 North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V2.00 Absolute Maximum Operating Temperature -65C to +125C Storage Temperature -65C to +150C Incident LO Power +20 dBm Incident RF Power +20 dBm Mounting Temperature +235C for 10 seconds 1. Exceeding these limits may cause permanent damage. 100.00 FORWARD CURRENT VS FORWARD VOLTAGE AND TEMPERATURE 125C 25C -50C 10.00 Forward Current (mA) Parameter FORWARD CURRENT (mA) Absolute Maximum Ratings1 1.00 0.10 0.01 0.00 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 FORWARD VOLTAGE (V) Handling Procedures Mounting Techniques The following precautions should be observed to avoid damaging these chips: These chips were designed to be inserted onto hard or soft substrates with the junction side down. They can be mounted with conductive epoxy or with a low temperature solder preform. The die can also be assembled with the junction side up, and wire or ribbon bonds made to the pads. Cleanliness: These chips should be handled in a clean environment. Do not attempt to clean die after installation. Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. General Handling: The protective polymer coating on the active areas of these die provides scratch protection, particularly for the metal airbridge which contacts the anode. Die can be handled with tweezers or vacuum pickups and are suitable for use with automatic pick-and-place equipment. Solder Die Attach: Solder which does not scavange gold, such as Indalloy # 2, is recommended. Sn-Pb based solders are not recommended due to solder embrittlement. Do not expose die to a temperature greater than 235C, or greater than 200C for longer than 10 seconds. No more than three seconds of scrubbing should be required for attachment. Epoxy Die Attach: Assembly can be preheated to 125 to 150C. Use a minimum amount of epoxy. Cure epoxy as per manufacturer's schedule. For extended cure times, temperatures should be kept below 200C. Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: 3 Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020