GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFOR M ANC E CH ARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1090 MP
90 Watts, 50 Volts, Pulsed
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1090MP is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 1025-1150 MHz. The transistor
includes input prematch for broadband capability. The device has gold thin-
film metallization for pro ven high est MTTF. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55FU, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 250 Watts Peak
o2
Maximum Voltage and Current
BVces Collector to Emitter Voltage 60 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 6.0 Amps Peak
Maximum Temperatures
Storage Temperature - 65 to +150 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST
CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Broadband Power Out
Power Input
Broadband Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1025-1150 MHz
Vcc = 50 Volts
PW = 10 µsec
DF =1%
F = 1090 MHz
90
8.0
35
98
8.5
38
14
10:1
Watts
Watts
d B
%
BVebo
BVces
Cob
hFE
θjc1
Emitter to Base Breakdown
Collector to Emitter Breakdo wn
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ie = 1 mA
Ie = 10 mA
Vcb = 50 V
Ic= 500mA,Vcc= 5V
Tc=25
(
C
3.5
65
15 16
120
0.6
Volts
Volts
pF
C/W
o
Note1: At Rated Power Output and pulse conditions.
2: Maximum Ratings are for RF Amplifier Operation
Issue Aug 1996
GHz TECHNOLOGY INC. RE SERV E S THE RIGHT TO MAKE CHANGES W ITHOU T FURTHER NOTICE. GHz RECOM M E NDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oak mead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1090 MP
August 1996
VCB=50V Pout= 90Watts. PW 10uS, DF=1%
Zin ZCL
Frequency R jx R jx
960 4.9 12.13 8.77 14.41
1030 4.55 10.71 7.66 12.3
1090 4.41 9.65 6.93 10.59
1150 4.39 8.7 6.36 8.95
1215 4.51 7.81 5.89 7.26
1090MP
SERIES INPUT IMPEDANCE V.s FREQUENCY
3
4
5
6
7
8
9
10
960 1030 1090 1150 1215
FREQUENCY(MHz)
REAL(Ohm)
0
2
4
6
8
10
12
14
IMAGINARY
R
jx
SERIES COLLECTOR LOAD IMPEDANCE V.s FREQUENCY
4
5
6
7
8
9
10
960 1030 1090 1150 1215
FREQUENCY(MHz)
REAL(Ohm)
0
2
4
6
8
10
12
14
16
IMAGINARY
R
jx
