© 2008 California Micro Devices Corp. All rights reserved.
490 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.cmd.com 1
Issue B – 06/17/08
PACDN006
6 Channel ESD Protection Array
Features
Six channels of ESD protection
+8 kV contact, +15 kV air ESD protection per
per channel (IEC 61000-4-2 standard)
+15 kV of ESD protection per channel (HBM)
Low loading capacitance (3pF typical)
Low leakage current is ideal for battery-powered
devices
Available in miniature 8-pin MSOP package
RoHS compliant (lead-free) finishing
Applications
Consumer electronic products
Cellular phones
•PDAs
Notebook computers
Desktop PCs
Digital cameras and camcorders
VGA (video) port protection for desktop
and portable PCs
Product Description
The PACDN006 is a diode array designed to provide 6
channels of ESD protection for electronic components
or sub-systems. Each channel consists of a pair of
diodes which steers an ESD current pulse to either the
positive (VP) or negative (VN) supply. The PACDN006
protects against ESD pulses up to 15kV Human Body
Model (100 pF capacitor discharging through a 1.5KΩ
resistor), and 8kV contact discharge, per International
Standard IEC 61000-4-2.
This device is particularly well-suited for portable elec-
tronics (e.g., cellular phones, PDAs, notebook comput-
ers) because of its small package footprint, high ESD
protection level, and low loading capacitance. It is also
suitable for protecting video output lines and I/O ports
in computers and peripherals and is ideal for a wide
range of consumer electronics products.
The PACDN006 is available with RoHS compliant lead-
free finishing.
Electrical Schematic
Typical Application Circuit
1234
87
6
5
VP
VN
PACDN006
I/O Port
Buffers Connector
Expansion
Handheld/PDA ESD Protection
124568
7
3
0.22uF*
* Decoupling capacitor must be placed
as close as possible to Pin7.
VCC
© 2008 California Micro Devices Corp. All rights reserved.
2490 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.cmd.com
Issue B – 06/17/08
PACDN006
Ordering Information
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
PIN DESCRIPTIONS
PIN NAME TYPE DESCRIPTION
1 CH 1 I/O ESD Channel.
2 CH 2 I/O ESD Channel.
3V
NGND Negative voltage supply rail or ground reference rail.
4 CH 3 I/O ESD Channel.
5 CH 4 I/O ESD Channel.
6 CH 5 I/O ESD Channel.
7V
PSupply Positive voltage supply rail.
8 CH 6 I/O ESD Channel.
PACKAGE / PINOUT DIAGRAMS
8-pin MSOP
1
2
3
4
8
7
6
5
CH 1
CH 2
VN
CH 3
CH 6
VP
CH 5
CH 4
TOP VIEW
Note: This drawing is not to scale.
006R
PART NUMBERING INFORMATION
Pins Package Ordering Part Number1Part Marking
8 MSOP PACDN006MR 006R
© 2008 California Micro Devices Corp. All rights reserved.
490 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.cmd.com 3
Issue B – 06/17/08
PACDN006
Specifications
Note 1: Only one diode conducting at a time.
Note 1: All parameters specified at TA=25°C unless otherwise noted. VP = 5V, VN = 0V unless noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: From I/O pins to VP or VN only. VP bypassed to VN with a 0.22μF ceramic capacitor (see Application Information for more
details).
Note 4: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 5.0V, VN grounded.
Note 5: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 5.0V, VN grounded.
ABSOLUTE MAXIMUM RATINGS
PARAMETER RATING UNITS
Supply Voltage (VP - VN)6.0V
Diode Forward DC Current (Note 1) 20 mA
Operating Temperature Range -40 to +85 °C
Storage Temperature Range -65 to +150 °C
DC Voltage at any channel input (VN - 0.5) to (VP + 0.5) V
Package Power Rating 200 mW
STANDARD OPERATING CONDITIONS
PARAMETER RATING UNITS
Operating Temperature Range -40 to +85 °C
Operating Supply Voltage (VP - VN) 0 to 5.5 V
ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IPSupply Current (VP-VN)=5.5V 10 μA
VF Diode Forward Voltage IF = 20mA 0.65 0.95 V
VESD ESD Protection
Peak Discharge Voltage at any channel
input, in system
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
c) Air Discharge per IEC 61000-4-2
Note 3
Notes 2,4
Note 5
Note 5
+
15
+
8
+
15
kV
kV
kV
VCL Channel Clamp Voltage
Positive Transients
Negative Transients
@15kV ESD HBM
VP + 13.0
VN - 13.0
V
V
ILEAK Channel Leakage Current +0.1 +1.0 μA
CIN Channel Input Capacitance @ 1 MHz, VP=5V, VN=0V,
VIN=2.5V; Note 2 applies
35pF
© 2008 California Micro Devices Corp. All rights reserved.
4490 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.cmd.com
Issue B – 06/17/08
PACDN006
Performance Information
Input Capacitance vs. Input Voltage
0
1
2
3
4
5
012345
VIN
CIN (pF)
Typical Variation of C
IN
vs. V
IN
(V
P
= 5V, V
N
= 0V, 0.1
μ
F chip capacitor between V
P
and V
N
)
© 2008 California Micro Devices Corp. All rights reserved.
490 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.cmd.com 5
Issue B – 06/17/08
PACDN006
Application Information
Design Considerations
In order to realize the maximum protection against
ESD pulses, care must be taken in the PCB layout to
minimize parasitic series inductances on the Supply/
Ground rails as well as the signal trace segment
between the signal input (typically a connector) and the
ESD protection device. Refer to Figure 1, which illus-
trates an example of a positive ESD pulse striking an
input channel. The parasitic series inductance back to
the power supply is represented by L1 and L2. The volt-
age VCL on the line being protected is:
VCL = Fwd voltage drop of D1 + VSUPPLY + L1 x d(IESD ) / dt
+ L2 x d(IESD ) / dt
where IESD is the ESD current pulse, and VSUPPLY is
the positive supply voltage.
An ESD current pulse can rise from zero to its peak
value in a very short time. As an example, a level 4
contact discharge per the IEC61000-4-2 standard
results in a current pulse that rises from zero to 30
Amps in 1ns. Here d(IESD)/dt can be approximated by
ΔIESD/Δt, or 30/(1x10-9). So just 10nH of series induc-
tance (L1 and L2 combined) will lead to a 300V incre-
ment in VCL!
Similarly for negative ESD pulses, parasitic series
inductance from the VN pin to the ground rail will lead
to drastically increased negative voltage on the line
being protected.
Another consideration is the output impedance of the
power supply for fast transient currents. Most power
supplies exhibit a much higher output impedance to
fast transient current spikes. In the VCL equation
above, the VSUPPLY term, in reality, is given by (VDC +
IESD x ROUT), where VDC and ROUT are the nominal
supply DC output voltage and effective output imped-
ance of the power supply respectively. As an example,
a ROUT of 1 ohm would result in a 10V increment in
VCL for a peak IESD of 10A.
If the inductances and resistance described above are
close to zero, the rail-clamp ESD protection diodes will
do a good job of protection. However, since this is not
possible in practical situations, a bypass capacitor
must be used to absorb the very high frequency ESD
energy. So for any brand of rail-clamp ESD protection
diodes, a bypass capacitor should be connected
between the VP pin of the diodes and the ground plane
(VN pin of the diodes) as shown in the Application Cir-
cuit diagram below. A value of 0.22µF is adequate for
IEC-61000-4-2 level 4 contact discharge protection
(+8kV). Ceramic chip capacitors mounted with short
printed circuit board traces are good choices for this
application. Electrolytic capacitors should be avoided
as they have poor high frequency characteristics. For
extra protection, connect a zener diode in parallel with
the bypass capacitor to mitigate the effects of the para-
sitic series inductance inherent in the capacitor. The
breakdown voltage of the zener diode should be
slightly higher than the maximum supply voltage.
As a general rule, the ESD Protection Array should be
located as close as possible to the point of entry of
expected electrostatic discharges. The power supply
bypass capacitor mentioned above should be as close
to the VP pin of the Protection Array as possible, with
minimum PCB trace lengths to the power supply,
ground planes and between the signal input and the
ESD device to minimize stray series inductance.
Additional Information
See also California Micro Devices Application Notes
AP209, “Design Considerations for ESD Protection”
and AP219, "ESD Protection for USB 2.0 Systems"”
Figure 1. Application of Positive ESD Pulse between Input Channel and Ground
N
L2
L
1
V
P
V
PAT H O F E SD CURRENT PULSEI
ONE
CHANNEL
OF
PACDN006
CHANNEL
INPUT
GROUND RAIL
CHASSISGROUND
POSITIVE SUPPLY RAIL
SYSTEM OR
CIRCUITRY
BEING
PROTECTED
LINE BEING
PROTECTED
ESD
D
0.22μF
1
2
D
0A
20A
VCL
© 2008 California Micro Devices Corp. All rights reserved.
6490 N. McCarthy Blvd., Milpitas, CA 95035-5112 Tel: 408.263.3214 Fax: 408.263.7846 www.cmd.com
Issue B – 06/17/08
PACDN006
Mechanical Details
MSOP-8 Mechanical Specifications, 8 pin
The PACDN006 is supplied in a 8-pin MSOP package.
Dimensions are presented below.
For complete information on the MSOP-8, see the
California Micro Devices MSOP Package Information
document.
Dimensions for MSOP-8 Package
PACKAGE DIMENSIONS
Package MSOP
Pins 8
Dimensions Millimeters Inches
Min Max Min Max
A0.75 0.95 0.030 0.037
A1 0.05 0.15 0.002 0.006
B0.28 0.38 0.011 0.015
C0.13 0.23 0.005 0.009
D2.90 3.10 0.114 0.122
E2.90 3.10 0.114 0.122
e0.65 BSC 0.026 BSC
H4.90 BSC 0.193 BSC
L0.40 0.70 0.016 0.028
# per tape
and reel
4000 pieces
Controlling dimension: millimeters
Mechanical Package Diagrams
E
D
H
1234
8765
L
END VIEW
C
e
B
A
A1
SEATING
PLANE
SIDE VIEW
TOP VIEW
Pin 1
Marking