A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1 mA 65 V
BVCER IC = 5 mA RBE = 10 Ω 65 V
BVEBO IE = 1 mA 3.5 V
ICES VCE = 50 V 6.3 mA
hFE VCE = 5.0 V IC = 100 mA 5 ---
PG
ηC VCC = 50 V POUT = 90 W f = 1025 - 1150 MHz
PIN = 13 W
8.4
35
dB
%
NPN SILICON RF POWER TRANSISTOR
MSC1090M
DESCRIPTION:
The ASI MSC1090M is a common
base Class C transistor, designed for
Avionics, DME Applications from 1025
to 1150 MHz.
FEATURES:
• Internal Input Matching Network
• PG = 8.4 dB at 90 W/1150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 250 mA
VCC 50 V
PDISS 290 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 0.60 °C/W
PACKAGE STYLE .250 2L FLG(B)
1 = COLLECTOR 2 = EMITTER 3 & 4 = BASE
MINIMUM
inches / mm
1.050 / 26.67
.120 / 3.05
.245 / 6.22
.552 / 14.02
.790 / 20.07
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.572 / 14.53
.810 / 20.57
.140 / 3.56
inches / mm
H.003 / 0.08 .007 / 0.18
DIM
K
I
J
.052 / 1.32 .072 / 1.83
.130 / 3.30
.088 x 45°
CHAMFER
A
B
Ø D
E
F G
H
IK
C
J
.100 X 45°
.095 / 2.41 .105 / 2.67
.285 / 7.24
.210 / 5.33
.120 / 3.05
1
2
3
4
