2N4401 2N4401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz NPN NPN Version 2006-09-12 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Mae [mm] 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) 2N4401 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 40 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 60 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) IC 600 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. 20 40 80 100 40 - - - - - - - - 300 - - - - - 0.40 V 0.75 V 0.75 V - - - 0.95 V 1.2 V DC current gain - Kollektor-Basis-Stromverhaltnis 2) IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, 500 mA, VCE VCE VCE VCE VCE = = = = = 1 1 1 1 2 V V V V V hFE hFE hFE hFE hFE Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VCEsat VCEsat Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1 2 VBEsat VBEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 2N4401 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. ICBV - - 100 nA IEBV - -- 100 nA fT 250 MHz - - CCBO - - 6.5 pF CEBO - - 30 pf VCC = 30 V, VEB = 2 V IC = 150 mA, IB1 = 15 mA td - - 15 ns tr - - 20 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA ts - - 225 ns tf - - 30 ns Collector-Base cutoff current - Kollektor-Basis-Reststrom VCE = 35 V, VEB = 0,4 V Emitter-Base cutoff current - Emitter-Basis-Reststrom VCE = 35 V, VEB = 0,4 V Gain-Bandwidth Product - Transitfrequenz IC = 20 mA, VCE = 10 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren 1 2 RthA < 200 K/W 1) 2N4403 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG