NPN RF Amplifier
PN3563
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43. See PN918 for characteristics.
Symbol Parameter Value Units
VCEO Collector-Emitter Vo ltage 15 V
VCBO Collector-Base Voltage 30 V
VEBO Em it ter - Bas e V oltage 2 . 0 V
ICC ollector Curr ent - Continuous 50 mA
TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
PN3563
PDTo ta l De vice Dissip at i on
Derate above 25°C350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
CBETO-92
PN3563
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
PN3563
NPN RF Amplifier
(continued)
Electrical Characteristics TA= 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Condition s Min Max Un its
VCEO(sus)Collector-Emitter Sustaining Voltage* IC = 3.0 m A , I B = 0 15 V
V(BR)CBO Col lec t or -B ase Breakd ow n Volt ag e IC = 1 00 µA, IE = 0 30 V
V(BR)EBO Em it ter - Bas e B r e akdown Voltage IE = 10 µA, IC = 0 2.0 V
ICBO C olle c tor Cu toff C u r ren t V CB = 1 5 V, IE = 0
VCB = 15 V, T A = 150°C0.05
5.0 µA
nA
ON CHARACTERISTICS*
hFE DC Cu r rent G ain IC = 8.0 m A , VCE = 10 V 20 200
SMALL SIGNAL CHARACTERISTICS
fTCurre nt Ga in - Bandwidth Product IC = 8.0 m A, VCE = 1 0 V,
f = 100 MHz 600 1500 MHz
Cobo Output Capacitance VCB = 1 0 V, IE = 0, f = 1.0 MHz
VCB = 0 , IE = 0, f = 1.0 MHz 1.7
3.0 pF
pF
Cibo Input Capacitance VBE = 0.5 V, IC = 0 , f = 140 MHz 2.0 pF
hfe Small-Signal Current Gain IC = 8.0 m A , VCE = 1 0 V,
f = 1.0 kHz 20 250
rb’CCCollector Base Time Constant IC = 8.0 m A, VCE = 1 0 V,
f = 79.8 MHz 8.0 25 pS
FUNCTIONAL TEST
Gpe Am pl ifier Po wer Gain IC = 8.0 m A, V CB = 1 0 V,
f = 200 MH z 14 26 dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
