SIGC156T120R2C IGBT Chip in NPT-technology Features: 1200V NPT technology low turn-off losses short tail current positive temperature coefficient easy paralleling integrated gate resistor Chip Type VCE This chip is used for: power module BSM100GD120DN2 C Applications: drives G IC SIGC156T120R2C 1200V 100A Die Size Package 12.59 X 12.59 mm2 sawn on foil E Mechanical Parameter Raster size Emitter pad size 12.59 X 12.59 8 x ( 3.98 x 2.38 ) mm Gate pad size 2 1.46 x 0.8 Area total 158.5 Thickness 200 m Wafer size 150 mm Max.possible chips per wafer Passivation frontside Pad metal Backside metal 82 Photoimide 3200 nm AlSiCu Ni Ag -system suitable for epoxy and soft solder die bonding Die bond Electrically conductive glue or solder Wire bond Al, <500m Reject ink dot size Recommended storage environment 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23C Edited by INFINEON Technologies, AIM PMD D CID CLS, L7181MM, Edition 2.1, 14.10.2008 SIGC156T120R2C Maximum Ratings Parameter Symbol Value Unit 1200 V 1) A Collector-Emitter voltage, Tvj =25 C VCE DC collector current, limited by Tvj max IC Pulsed collector current, tp limited by Tvj max Ic,puls 300 A Gate emitter voltage VGE 20 V Junction temperature range Tvj -55 ... +175 C Operating junction temperature Tvj -55...+150 C tSC 10 s Short circuit data 2) VGE = 15V, VCC = 900V, Tvj = 150C I C , m a x = 200A, V C E , m a x = 1200V Reverse bias safe operating area 2 ) (RBSOA) Tvj 150 C 1) depending on thermal properties of assembly 2) not subject to production test - verified by design/characterization Static Characteristic (tested on wafer), Tvj =25 C Value Parameter Symbol Conditions Unit min. typ. max. Collector-Emitter breakdown voltage V(BR)CES VGE=0V , IC= 5mA 1200 Collector-Emitter saturation voltage VCEsat VGE=15V, IC=100A 2.0 2.5 3.0 Gate-Emitter threshold voltage VGE(th) IC=4mA , VGE=VCE 4.5 5.5 6.5 Zero gate voltage collector current ICES VCE=1200V , VGE=0V 12.2 A Gate-Emitter leakage current IGES VCE=0V , VGE=20V 600 nA Integrated gate resistor rG V 5 Dynamic Characteristic (not subject to production test - verified by design / characterization), Tvj =25 C Parameter Symbol Conditions Value min. typ. Input capacitance Cies V C E = 25 V , 6500 Output capacitance Coes V G E = 0V , 1000 Reverse transfer capacitance Cres f= 1 MH z 500 Edited by INFINEON Technologies, AIM PMD D CID CLS, L7181MM, Edition 2.1, 14.10.2008 max. Unit pF SIGC156T120R2C Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Edited by INFINEON Technologies, AIM PMD D CID CLS, L7181MM, Edition 2.1, 14.10.2008 SIGC156T120R2C Chip Drawing G T E E = Emitter pad G = Gate pad T = Test pad do not contact Edited by INFINEON Technologies, AIM PMD D CID CLS, L7181MM, Edition 2.1, 14.10.2008 SIGC156T120R2C Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AIM PMD D CID CLS, L7181MM, Edition 2.1, 14.10.2008