SIGC156T120R2C
Edited by INFINEON Technologies, AIM PMD D CID CLS, L7181MM, Edition 2.1, 14.10.2008
IGBT Chip in NPT-technology
Features
:
1200V NPT technology
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
integrated gate resistor
This chip is used for:
power module
BSM100GD120DN2
G
C
E
Applications:
drives
Chip Type VCE ICDie Size Package
SIGC156T120R2C 1200V 100A 12.59 X 12.59 mm2sawn on foil
Mechanical Parameter
Raster size 12.59 X 12.59
mm2
Emitter pad size 8 x ( 3.98 x 2.38 )
Gate pad size 1.46 x 0.8
Area total 158.5
Thickness 200 µm
Wafer size 150 mm
Max.possible chips per wafer 82
Passivation frontside Photoimide
Pad metal 3200 nm AlSiCu
Backside metal Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond Electrically conductive glue or solder
Wire bond Al, <500µm
Reject ink dot size 0.65mm ; max 1.2mm
Recommended storage environment Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
SIGC156T120R2C
Edited by INFINEON Technologies, AIM PMD D CID CLS, L7181MM, Edition 2.1, 14.10.2008
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter voltage, Tvj =25 CVCE 1200 V
DC collector current, limited by Tvj max IC1 ) A
Pulsed collector current, tplimited by Tvj max Ic,puls 300 A
Gate emitter voltage VGE 20 V
Junction temperature range Tvj -55 ... +175 °C
Operating junction temperature Tvj -55...+150 C
Short circuit data 2 ) VGE = 15V, VCC = 900V, Tvj = 150°C tSC 10 µs
Reverse bias safe operating area 2 ) (RBSOA) IC,max = 200A, VCE,max = 1200V
Tvj 150°C
1 ) depending on thermal properties of assembly
2 ) not subject to production test - verified by design/characterization
Static Characteristic (tested on wafer), Tvj =25 C
Parameter Symbol Conditions Value Unit
min. typ. max.
Collector-Emitter breakdown voltage V(BR)CES VGE=0V , IC= 5mA 1200
V
Collector-Emitter saturation voltage VCEsat VGE=15V, IC=100A 2.0 2.5 3.0
Gate-Emitter threshold voltage VGE(th) IC=4mA , VGE=VCE 4.5 5.5 6.5
Zero gate voltage collector current ICES VCE=1200V , VGE=0V 12.2 µA
Gate-Emitter leakage current IGES VCE=0V , VGE=20V 600 nA
Integrated gate resistor rG5
Dynamic Characteristic (not subject to production test - verified by design / characterization),
Tvj =25 C
Parameter Symbol Conditions Value Unit
min. typ. max.
Input capacitance Cies VCE=25V,
VGE=0V,
f=1MHz
6500 pFOutput capacitance Coes 1000
Reverse transfer capacitance Cres 500
SIGC156T120R2C
Edited by INFINEON Technologies, AIM PMD D CID CLS, L7181MM, Edition 2.1, 14.10.2008
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
SIGC156T120R2C
Edited by INFINEON Technologies, AIM PMD D CID CLS, L7181MM, Edition 2.1, 14.10.2008
Chip Drawing
E = Emitter pad
G= Gate pad
T= Test pad do not contact
T
G
E
SIGC156T120R2C
Edited by INFINEON Technologies, AIM PMD D CID CLS, L7181MM, Edition 2.1, 14.10.2008
Description
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
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Due to technical requirements, components may contain dangerous substances. For information on the
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components may be used in life-support devices or systems only with the express written approval of
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