3-159
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 |Copyright © Intersil Corporation 1999
HA-5177/883
Ultra Low Offset Voltage Operational Amplifier
Description
The HA-5177/883 is a monolithic, all bipolar, precision oper-
ational amplifier, utilizing Intersil Dielectric Isolation and
advance processing techniques. This design features a
combination of precision input characteristics, wide gain
bandwidth (2MHz) and high speed (0.5V/µs min) and is an
improved version of the HA-5135/883.
The HA-5177/883 uses advanced matching techniques and
laser trimming to produce low offset voltage (10µV typ, 60µV
max) and low offset voltage drift (0.1µV/oC typ, 0.6µV/oC
max). This design also features low voltage noise (9nV/√Hz
typ), Low current noise (0.32pA/√Hz typ), nanoamp input
currents, and 126dB minimum gain.
These outstanding features along with high CMRR (140dB
typ, 110dB min) and high PSRR (135dB typ, 110dB min)
make this unity gain stable amplifier ideal for high resolution
data acquisition systems, precision integrators, and low level
transducer amplifiers.
Ordering Information
PART
NUMBER TEMPERATURE
RANGE PACKAGE
HA2-5177/883 -55oC to +125oC 8 Pin Can
HA7-5177/883 -55oC to +125oC 8 Lead CerDIP
HA4-5177/883 -55oC to +125oC 20 Lead Ceramic LCC
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . . .60µV (Max)
10µV (Typ)
• Low Offset Voltage Drift . . . . . . . . . . . . 0.6µV/oC (Max)
0.1µV/oC (Typ)
• High Voltage Gain . . . . . . . . . . . . . . . . . . . .126dB (Min)
150dB (Typ)
• High CMRR. . . . . . . . . . . . . . . . . . . . . . . . . .110dB (Min)
140dB (Typ)
• High PSRR . . . . . . . . . . . . . . . . . . . . . . . . . .110dB (Min)
135dB (Typ)
• Low Noise. . . . . . . . . . . . . . . . . . . . . . . .11nV/√Hz (Max)
9nV/√Hz (Typ)
• Low Power Consumption . . . . . . . . . . . . . 51mW (Max)
• Wide Gain Bandwidth Product . . . . . . . . . . 2MHz (Min)
• Unity Gain Stable
Applications
• High Gain Instrumentation Amplifiers
• Precision Control Systems
• Precision Integrators
• High Resolution Data Converters
• Precision Threshold Detectors
• Low Level Transducer Amplifiers
July 1994
Spec Number 511041-883
File Number 3733.1
Pinouts
HA-5177/883
(CERDIP)
TOP VIEW
HA-5177/883
(CLCC)
TOP VIEW
HA-5177/883
(METAL CAN)
TOP VIEW
1
2
3
4
8
7
6
5
BAL1
V+
OUT
NC
BAL 2
IN-
IN+
V-
+
-4
5
6
7
8
9101112
13
3212019
15
14
18
17
16
BAL 2
NC
V-
NC
NC
NC
NC
NC
V+
OUT
NC
NC
NC
NC
BAL1
NC
NC
+
-IN
+IN
NC
-
BAL1
OUT
IN -
V-
BAL 2
IN+
V+
NC
2
4
6
1
3
7
5
8
+
-
3-160
Specifications HA-5177/883
Absolute Maximum Ratings Thermal Information
Voltage Between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . 44V
Differential Input Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . 7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Input Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25mA
Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance θJA θJC
CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W 28oC/W
Ceramic LCC Package . . . . . . . . . . . . . . 65oC/W 15oC/W
Metal Can Package. . . . . . . . . . . . . . . . . 155oC/W 67oC/W
Package Power Dissipation Limit at +75oC for TJ≤ +175oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W
Metal Can Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .645mW
Package Power Dissipation Derating Factor Above +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8.7mW/oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . .15.4mW/oC
Metal Can Package. . . . . . . . . . . . . . . . . . . . . . . . . . . .6.5mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V VINCM ≤ 1/2 (V+ - V-)
RL≥ 600Ω
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS SYMBOL CONDITIONS GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Input Offset Voltage VIO VCM = 0V 1 +25oC -60 60 µV
2, 3 +125oC, -55oC -100 100 µV
Input Bias Current IBVCM = 0V,
RS = 10kΩ, 50Ω 1 +25oC-66nA
2, 3 +125oC, -55oC-8 8 nA
Input Offset Current IIO VCM = 0V,
+RS = 10kΩ,
-RS = 10kΩ
1 +25oC-66nA
2, 3 +125oC, -55oC-8 8 nA
Common Mode
Range +CMR V+ = +3V, V- = -27V 1 +25oC12-V
2, 3 +125oC, -55oC12 - V
-CMR V+ = +27V, V- = -3V 1 +25oC - -12 V
2, 3 +125oC, -55oC - -12 V
Large Signal Voltage
Gain +AVOL VOUT = 0V and +10V,
RL = 2kΩ4 +25oC 126 - dB
5, 6 +125oC, -55oC 120 - dB
-AVOL VOUT = 0V and -10V,
RL = 2kΩ4 +25oC 126 - dB
5, 6 +125oC, -55oC 120 - dB
Common Mode
Rejection Ratio +CMRR ∆VCM = 10V,
V+ = +5V, V- = - 25V,
VOUT = -10
1 +25oC 116 - dB
2, 3 +125oC, -55oC 110 - dB
-CMRR ∆VCM = 10V,
V+ = +25V, V- = - 5V,
VOUT = +10
1 +25oC 116 - dB
2, 3 +125oC, -55oC 110 - dB
Output Voltage
Swing +VOUT1 RL = 2kΩ4 +25oC12-V
5, 6 +125oC, -55oC12 - V
-VOUT1 RL = 2kΩ4 +25oC - -12 V
5, 6 +125oC, -55oC - -12 V
+VOUT2 RL = 600Ω4 +25oC10-V
-VOUT2 RL = 600Ω4 +25oC - -10 V
+IBI–B
+
2
-----------------------------
Spec Number 511041-883
3-161 Spec Number 511041-883
Specifications HA-5177/883
Output Current +IOUT VOUT = -10V 4 +25oC15-mA
5, 6 +125oC, -55oC15 - mA
-IOUT VOUT = +10V 4 +25oC - -15 mA
5, 6 +125oC, -55oC - -15 mA
Quiescent Power
Supply Current +ICC VOUT = 0V, IOUT = 0mA 1 +25oC - 1.7 mA
2, 3 +125oC, -55oC - 1.7 mA
-ICC VOUT = 0V, IOUT = 0mA 1 +25oC -1.7 - mA
2, 3 +125oC, -55oC -1.7 - mA
Power Supply
Rejection Ratio +PSRR ∆VSUP = 15V,
V+ = +5V, V- = - 15V,
V+ = +20V, V- = - 15V
1 +25oC 110 - dB
2, 3 +125oC, -55oC 110 - dB
-PSRR ∆VSUP = 15V,
V+ = +15V, V- = - 5V,
V+ = +15V, V- = - 20V
1 +25oC 110 - dB
2, 3 +125oC, -55oC 110 - dB
Offset Voltage
Adjustment +VIOAdj Note 2 1 +25oC 0.3 - mV
2, 3 +125oC, -55oC 0.3 - mV
-VIOAdj Note 2 1 +25oC - -0.3 mV
2, 3 +125oC, -55oC - -0.3 mV
NOTES:
1. The input stage has series 500Ω resistors along with back to back diodes. This provides large differential input voltage protection for a
slight increase in noise voltage.
2. This test is for functionality only to assure adjustment through 0V.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY =±15V, RSOURCE = 50Ω, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified.
PARAMETERS SYMBOL CONDITIONS GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Slew Rate +SR VOUT = -3V to +3V,
VIN S.R. ≤25V/µs7 +25oC 0.5 - V/µs
-SR VOUT = +3V to -3V,
VIN S.R. ≤25V/µs7 +25oC 0.5 - V/µs
Rise and Fall Time tRVOUT = 0 to +200mV
10% ≤TR≤ 90% 7 +25oC - 420 ns
tFVOUT = 0 to -200mV
10% ≤TF≤ 90% 7 +25oC - 420 ns
Overshoot +OS VOUT = 0 to +200mV 7 +25oC - 40 %
-OS VOUT = 0 to -200mV 7 +25oC - 40 %
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.
PARAMETERS SYMBOL CONDITIONS GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
3-162 Spec Number 511041-883
Specifications HA-5177/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY =±15V, RLOAD = 2kΩ, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified.
PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Average Offset Voltage
Drift VIOTC VCM = 0V 1 -55oC to +125oC - 0.6 µV/oC
Average Offset Current
Drift IIOTC Versus Temperature 1 -55oC to +125oC - 40 pA/oC
Average Bias Current Drift IRTC Versus Temperature 1 -55oC to +125oC - 40 pA/oC
Differential Input
Resistance RIN VCM = 0V 1 +25oC20-MΩ
Low Frequency
Peak-to-Peak Noise V oltage ENP-P 0.1Hz to 10Hz 1 +25oC - 0.6 µVP-P
Low Frequency
Peak-to-Peak Noise Current INP-P 0.1Hz to 10Hz 1 +25oC - 45 pAP-P
Input Noise Voltage
Density ENRS = 20Ω, fO = 10Hz 1 +25oC - 18 nV/√Hz
RS = 20Ω, fO = 100Hz 1 +25oC - 13 nV/√Hz
RS = 20Ω, fO = 1kHz 1 +25oC - 11 nV/√Hz
Input Noise Current
Density INRS = 2MΩ, fO = 10Hz 1 +25oC-4pA/√Hz
RS = 2MΩ, fO = 100Hz 1 +25oC - 2.3 pA/√Hz
RS = 2MΩ, fO = 1kHz 1 +25oC-1pA/√Hz
Gain Bandwidth Product GBWP VO= 100mV,
1Hz ≤fO≤ 100kHz 1 +25oC 2 - MHz
Full Power Bandwidth FPBW VPEAK = 10V 1, 2 +25oC 8 - kHz
Minimum Closed Loop
Stable Gain CLSG RL = 2kΩ, CL = 50pF 1 -55oC to +125oC+1 - V/V
Settling Time tSTo 0.1% for a 10V Step 1 +25oC-15µs
Output Resistance ROUT Open Loop 1 +25oC-70Ω
Power Consumption PC VOUT = 0V, IOUT = 0mA 1, 3 -55oC to +125oC - 51 mW
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2)
Interim Electrical Parameters (Pre Burn-In) 1
Final Electrical Test Parameters 1 (Note 1), 2, 3, 4, 5, 6, 7
Group A Test Requirements 1, 2, 3, 4, 5, 6, 7
Groups C and D Endpoints 1
NOTE:
1. PDA applies to Subgroup 1 only.
3-163
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
HA-5177/883
Die Characteristics
DIE DIMENSIONS:
72 x 103 x 19 mils ± 1 mils
1840 x 2620 x 483µm± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kű2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12kű2kÅ
Nitride Thickness: 3.5kű1.5kÅ
WORST CASE CURRENT DENSITY:
6.0 x 104A/cm2
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 71
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5177/883
BAL1 V+ OUT NC
V-+IN-IN
BAL2
Spec Number 511041-883
