TLP180
2017-05-12
1
TO SHIBA Photocou pler GaAs Ired & Photo-Transistor
TLP180
Telephone Use Equipment
Programmable Controllers
AC/DC-Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP180 is a small outline coupler, suitable for
surfa ce mount asse mb l y.
TLP180 consist of a photo transistor, optically coupled to a gallium arsenide
infrared emitting diode connected inverse parallel, and can operate directly by
AC input current.
• Collector-emitter voltage: 80 V (min)
• Current transfer ratio: 50% (min)
Rank GB: 100% (min)
• Isolation voltage: 3750 Vrms (min)
• UL recognized: UL1577, file No. E67349
• c-UL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
• Option (V4) type
VDE approved : EN60747-5-5
Maximum Operating Insuration Voltage: 565 Vpk
Highest Permissible Overvoltage: 6000 Vpk
Note: When a EN60747-5-5 approved type is needed,
Please designat e “Opt ion( V 4) ”
Current Transfer Ratio
Classi-
fication
(Note 1)
Current Transf er Ratio (%) (I C/IF)
Marking Of
Classification
IF = 5 mA, V CE = 5 V, Ta = 25°C
Min
Max
Standard 50 600 Blank, YE, GR, BL , GB
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank BL 200 600 BL
Rank GB 100 600 GB , GR , BL
Note: The product with the Rank Y and BL are limited in production.
For details, please contact your nearest Toshiba sales representative.
Note 1: E x. rank GB: TLP180 (GB)
Note: Application type name for certification test,
please use standard product type name, i.e.
TLP180(GB): TLP180
TOSHIBA
11-4C1
Weight : 0.09 g (typ.)
Pin Configuration
(top view)
6
: Anode, Cathode
: Cathode, Anode
: Emitter
4
1
3
Unit: mm
Start of commercial production
1995-12
TLP180
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
LED
Forward current IF(RMS) ±50 mA
Forward current det ating (Ta ≥ 53°C) ΔIF/°C -0.7 mA/°C
Pulse forward current (Note 1) IFP ±1 A
Diode power dissipat i on
PD
100
mW
Diode power dissipat i on derating (Ta ≥ 53°C)
ΔPD /°C
-1.39
mW/°C
Junction temperature Tj 125 °C
Detector
Collector-emitter voltage VCEO 80 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Power dissipation PC 150 mW
Power dissipation derat i ng (Ta ≥ 25°C) ΔPC/°C -1.5 mW/°C
Junction temperature Tj 125 °C
Storage temperature range Tstg -55 to 125 °C
Operating tem perature range Topr -55 to 100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 200 mW
Total package power dissi pation derating (Ta ≥ 25°C) ΔPT/°C -2.0 mW/°C
Isolation voltage (AC, 60 s, R.H. ≤ 60%) (Note 2) BVS 3750 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimat ed failure rate, etc).
Note 1: Pulse width ≤ 100 μs, f = 100 Hz
Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 48 V
Forward current IF(RMS) ― 16 20 mA
Collector current IC ― 1 10 mA
Operating tem perature Topr -25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP180
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF IF = ±10 mA 1.0 1.15 1.3 V
Capacitance CT V = 0 V, f = 1 MHz ― 60 ― pF
Detector
Collector-emitter
breakdown voltage V(BR)CEO IC = 0.5 mA 80 ― ― V
Emitter-collector
breakdown voltage V(BR)ECO IE = 0.1 mA 7 ― ― V
Collector dark current ICEO
VCE = 48 V
(ambient li ght below 1000 ℓx) (Note 1) ― 0.01
(2) 0.1
(10) μA
VCE = 48 V, Ta = 85°C
(ambient li ght below 1000 ℓx) (Note 1) ― 2
(4) 50
(50) μA
Capacitance
(collector to em itt er)
CCE V = 0 V, f = 1 MHz ― 10 ― pF
Note 1: Please use standard electric lamp to light up the device's marking surface.
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Current transf er ratio IC/IF IF = ±5 mA, VCE = 5 V 50 — 600 %
Rank GB
100 — 600
Saturated CTR IC/IF(sat) IF = ±1 mA, VCE = 0.4 V — 60 — %
Rank GB
30 — —
Collector-emitter
saturati on voltage VCE (sat)
IC = 2.4 mA, IF = ±8 mA — — 0.4
V
IC = 0.2 mA, IF = ±1 mA — 0.2 —
Rank GB
— — 0.4
Off-state collector current IC(off) VF = ± 0.7 V, VCE = 48 V — 1 10 μA
CTR symmet ry IC(ratio) IC (IF = -5 mA)/IC (IF = 5 mA)
(Note 1) 0.33 1 3 —
Note 1: IC(ratio)=
5V)
CE
V,
F1
I
F
(I
C1
I5V)
CE
V,
F2
I
F
(I
C2
I
==
==
I
C1
IC2
VCE
IF1
IF2
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Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitanc e input to output CS VS = 0 V, f = 1 MHz ― 0.8 ― pF
Isolation resist ance RS VS = 500 V, R.H. ≤ 60% 5×1010 1014 ― Ω
Isolation voltage BVS
AC, 60 s 3750 ― ― Vrms
AC, 1 s, in oil ― 10000 ―
DC, 60 s, in oi l ― 10000 ― Vdc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Rise time tr
VCC = 10 V, IC = 2 mA
RL = 100 Ω
― 2 ―
μs
Fall time tf ― 3 ―
Turn-on time tON ― 3 ―
Turn-off time tOFF ― 3 ―
Turn-on time tON RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = ±16 mA
― 2 ―
μs
Storage time ts ― 25 ―
Turn-off time tOFF ― 40 ―
Fig. 1: Switching time test circuit
tOFF
tON
VCE
IF ts VCC
4.5V
0.5V
VCC
RL
IF
VCE
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PC – Ta
200
-20 0 20 40 60 80 100 120
160
120
80
40
0
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (°C)
IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
10
Pulse width ≤ 100 μs
Ta = 25°C
10-3 10-2 10-1 100
30
50
100
300
1000
500
ΔVF/ΔTa – IF
Forward current IF (mA)
Forward voltage temperature
coefficient
ΔVF/ΔTa (mV/°C)
-3.2
-0.4
0.1
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
0.3 0.5 1 3 5 10 30 50
IFP – VFP
Pulse forward voltage VFP (V)
1000
1
0.6
500
300
100
50
30
10
5
3
1.0 1.4 1.8 2.2 2.6 3.0
Pulse width ≤ 10 μs
Repetitive
Frequency = 100 Hz
Ta = 25°C
Pulse forward current IFP (mA)
IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
100
-20
80
60
40
20
0 0 20 40 60 80 100 120
I
F
– V
F
Forward voltage VF (V)
Forward current I
F (mA)
100
0.001
0
10
1
0.1
0.01
0.4 0.8 1.2 1.6 2
-25°C 85°C
25
°C
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Collector current IC (mA)
IC – VCE
50
0
Collector-emitter voltage VCE (V)
0
40
30
20
10
2 4 6 8 10
50 mA
30 mA
20 mA
15 mA
10 mA
PC(MAX)
IF = 5 mA
Ta = 25°C
Collector-emitter voltage VCE (V)
Forward current IF (mA)
IC/IF – IF
Current transfer ratio
IC/IF (%)
1000
10
0.1 0.3 0.5 1 3 5 10 30 50
30
50
100
300
500
VCE = 10 V
VCE = 5 V
VCE = 0.4 V
Ta = 25°C
Sample B
Sample A
Collector dark current ICEO (μA)
ICEO – Ta
Ambient temperature Ta (°C)
0
101
VCE = 48V
5 V
10 V
24 V
20 40 60 80 100
100
10-1
10-2
10-3
10-4
IC – IF
Forward current IF (mA)
Collector current IC (mA)
0.1
0.1
0.3
0.5
1
3
5
10
30
50
100
0.3 0.5 1 3 5 10 30 50
Sample A
Sample B
Ta = 25°C
VCE = 10 V
VCE = 5 V
VCE = 0.4 V
IC – VCE
30
0
0 1.0
0.2 0.4 0.6 0.8
20
10
Collector current IC (mA)
50 mA
Ta = 25°C
40 mA
30 mA
20 mA
10 mA
5 mA
IF = 2 mA
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VCE(sat) – Ta
Ambient temperature Ta (°C)
Collector-emitter saturation
voltage VCE(sat) (V)
0.24
0
-40
0.20
0.12
0.08
0.04
-20 0 40 80 100 20 60
0.16 IF = 5 mA, IC = 1 mA
IF = 1 mA, IC = 0.2mA
IF = 1 mA
IC = 0.2 mA
IC – Ta
Collector current IC (mA)
100
1
-20 100
0 20 40 80
30
5
60
0.1
0.3
0.5
3
10
50
VCE = 5 V
1mA
0.5mA
5mA
10mA
IF = 25mA
Ambient temperature Ta (°C)
Switching Time – RL
Load resistance RL (kΩ)
1
10
30
50
100
300
500
1000
3 5 30 50
Switching time (μs)
5
3
1
Ta = 25°C
IF = 16 mA
VCC = 5 V
tOFF
ts
tON
100 10
Switching time (μs)
Switching Time – Ta
0
160
-20 20 40 60 80
Ambient temperature Ta (°C)
30
10
1
0.5
0.1 100
0.3
3
5
50 tOFF
ts
tON
IF = 16 mA
VCC = 5 V
RL = 1.9 kΩ
TLP180
2017-05-12
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RESTRICTIONS ON PRODUCT USE
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responsibl e for compl ying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimi ze risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
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relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the " T OSH IBA Semiconductor Reliability Handbook" and (b) the in structions for
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design or applications, i ncludi ng but not limit ed to (a) determini ng the appropriatenes s of t he use of this Product in such design or
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