VTB Process Photodiode VTB8440H, 8441H PACKAGE DIMENSIONS inch (mm) CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -20C to 75C -20C to 75C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) SYMBOL CHARACTERISTIC VTB8440H TEST CONDITIONS Min. ISC TC ISC VOC TC VOC ID RSH 35 Typ. VTB8441H Max. 45 Min. Typ. 35 UNITS Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 490 490 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .07 1.4 G .12 45 .23 A .12 2000 .23 100 %/C pA RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/C CJ Junction Capacitance H = 0, V = 0 1.0 1.0 nF SR Sensitivity 365 nm TC RSH range Spectral Application Range .10 320 .10 1100 320 A/W 1100 nm p Spectral Response - Peak VBR Breakdown Voltage 1/2 Angular Resp. - 50% Resp. Pt. 50 50 Degrees NEP Noise Equivalent Power 5.9 x 10-14 (Typ.) 1.3 x 10-14 (Typ.) Specific Detectivity 3.9 x 10 12 (Typ.) 1.7 x 10 13 (Typ.) W Hz cm Hz W D* 920 2 PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 40 2 Phone: 877-734-6786 Fax: 450-424-3413 41 920 nm 40 V www.perkinelmer.com/opto