41
VTB Proc ess Photodiode VTB8440H, 8441H
PRODUCT DESCRIPTION
Pl anar sil ico n phot odi od e i n a rec esse d ce ra mic
package. Chip is coated with a protective layer
of epoxy. These diodes have very high shunt
resistance and have good blue response.
PACKAGE DIMENSIONS inch (mm)
CASE 21 8 mm CERAMIC
CHIP ACTIVE AREA: .008 in
2
(5.16 mm
2
)
ABSOLUTE MAXIMUM RATINGS
St orage Tem pe r at u r e: -2 0°C to 75°C
Operating Te mperatur e: -2 0°C to 75°C
ELECTRO-OP T ICA L CHA RACTERI STICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL CHARACTERISTIC TEST CONDITIONS VTB8440H VTB8441H UNITS
Min. Typ. Max. Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 35 45 35 45 µA
TC ISC ISC Temperature C oefficient 2850 K .12 .23 .12 .23 %/°C
VOC Open Circuit Voltage H = 100 fc , 2850 K 490 490 mV
TC VOC VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 2000 100 pA
RSH Shunt Resistance H = 0, V = 10 mV .07 1.4 GΩ
TC RSH RSH Temperature Coeffi cient H = 0, V = 10 mV -8.0 -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 1.0 1.0 nF
SRSensitivity 365 nm .10 .10 A/W
λrange Spectral Application Range 320 1100 320 1100 nm
λpSpectral Respo nse - Peak 920 920 nm
VBR Breakdown Voltage 2 40 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±50 ±50 Degrees
NEP Noise Equivalent Power 5.9 x 10-14 (Typ.) 1.3 x 10-14 (Ty p.)
D* Specif ic Detectivit y 3.9 x 10 12 (Typ.) 1.7 x 10 13 (Typ.) WHz⁄
cm Hz W⁄
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
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