Laser Diode Incorporated 4 Olsen Avenue, Edison, New Jersey 08820 USA Voice: 732-549-9001, Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com High Power CW Laser Diodes 0.5 - 5 Watts High Efficiency Devices Multiple Package Options Micro Lensed Devices Applications: * * * * * * Diode based medical systems Diode pumped solid state lasers Analytical equipment Illuminators Reprographics Laser initiated ordnance Laser Diode's series of High Power CW products is offered with an output range from 0.5 Watt to 5.0 Watts. These devices have a standard wavelength of 808nm 3nm with a spectral width of 2.5nm FWHM. Specifications and Limits Common Characteristics Peak wavelength Peak wavelength tolerance Spectral width (50% points) Rise/fall times Far field beam divergence Efficiency ar If Operating temperture Storage temperature Since its inception in 1967, LDI has been at the forefront of laser diode technology. Research and development efforts in our state-of-the-art wafer processing laboratories, combined with our long history of producing MIL-qualified diode lasers has resulted in a product that is competitively priced, highly reliable, and used world-wide in critical applications. minimum typical 25 -20 -40 808 3 2.5 0.5 12 x 40 30 - nm nm ns ns deg % C C maximum 1.0 +30 +85 SINGLE DIODE LASERS Laser Characteristics Power (watts) CW CW CW CW 0500 1000 2000 5000 SERIES SERIES SERIES SERIES 0.5 1.0 2.0 5.0 Source Size Typical lth Max Current Typical Vf (m) (amps) (amps) (volts) 50 100 200 460 0.15 0.3 0.6 1.3 0.75 1.5 3.0 6.0 2.0 2.0 2.0 2.0 ORDERING INFORMATION Our quantum well, gain-guided, broad area CW device operates with efficiencies of greater than 1 watt per ampere. Single diode power options from 0.5 to 5.0 watts are available, depending on source size. LDI offers a wide selection of package options including integrated TE coolers, detectors, fiber optics, and micro-optics. Our manufacturing Pilot Line allows quick response and full customization for customers that require developmental capability from their laser supplier. Open heat sink packages are available for device integration into optical system designed with very short working distances. LDI offers a selection of fiber coupling options including low NA coupled devices. Each laser device is "burned in" and fully characterized for performance. These individualized, fully screened devices are the key component in Laser Diode's quality based and innovation driven customer relationships. CW 0500-C M-00 OUTPUT POWER 0500 = .5 Watt 1000 = 1 Watt 2000 = 2 Watt 5000 = 5 Watt 00 DO TO DT OPTIONS = None = Monitor Detector Only = TEC Only = TEC and Monitor Detector PACKAGE CM = C-Mount HH = High Heat Load HF = Pigtailed High Heat Load T3 = TO-3 90 = 9.0 mm F TYPICAL FORWARD VOLTAGE CURVE POWER VS CURRENT 2.0 5.0 1.9 4.5 4.0 2.5 1.7 2.0 1.6 VOLTAGE 3.0 1.8 POWER 3.5 1.5 1.5 1.0 0.5 2.0 4.0 6.0 1.4 0.0 0 1 2 3 4 5 6 7 CURRENT (A) CURRENT (A) TYPICAL WAVELENGTH DISTRIBUTION TYPICAL BEAM DIVERGENCE 1.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 RELATIVE INTENSITY 0.9 1.0 Perpendicular 0.8 0.6 0.4 0.2 RELATIVE INTENSITY 0.0 0.1 0 803.2 807.3 811.4 815.5 0 -50 -30 WAVELENGTH (nm) -10 10 30 50 ANGLE (DEGREES) TYPICAL BEAM DIVERGENCE 1.0 0.8 Parallel 0.6 0.4 0.2 0 -50 -30 -10 10 30 ANGLE (DEGREES) 50 RELATIVE INTENSITY 799.1 9 mm Package 0.26 NOM (6.6) 0.05 (1.3) High Heat Load (HHL) 0.20 (5.1) 0.14 (3.6) 0.14 (3.5) 0.115 (2.9) 1.750 (44.5) 1.520 (38.6) 0.250 (6.4) 1.250 (31.8) 0.159 DIA (4 PLCS) M 3 THD (2 PLCS) LASER FACET DEPTH = 0.04 (1.0) NOM LASER OUTPUT 3 0.10 (2.5) 2 1 1250 (31.8) 0.354 .005 (9.00 .13) 0.26 .005 (6.60 .13) 0.625 (15.8) 0 44 DIA. WINDOW 1 0.50 (12.7 MIN) PIN 1: Laser Cathode (-) PIN 2: laser Anode, MPD Cathode & Case Ground PIN 3: Monitor Photodiode Anode (+) WINDOW: AR COATING, BOTH SURFACES THICKNESS: 0.010 0.002 (0.25 0.05) 10 1.000 (25.4) 0.250 (0.64) 0.425 (10.8) LEAD SPACING (0.100 BETWEEN CENTERS) TO-3 Package 0.12 (3.0) O.04 (1.0) (TYP) 0.27 (6.7) WINDOW 0.50 (12.7) 0.10 (2.5) DIA 1.187 (30.15) 1.53 (38.1) LASER OUTPUT LID O.D. 0.75 (19.0) DIA 0.730 0.100 (18.5) (2.54) LASER OUTPUT 40 TYP 1 WITHIN 0.02 (0.5) OF PACKAGE AXIS 8 Pigtailed High Heat Load (HHLF) 1.000 (25.4) DIA 0.16 (4.0) DIA 2 PLCS PIN 1: PIN 2: PIN 3: PIN 4: 0.03 (0.7) DEPTH OF LASER OUTPUT FACET 1 METER (MIN) BOLT CIRCLE 0.50 (12.7) DIA TEC (+) Thermistor (1) Thermistor (2) Laser Cathode (-) PIN 5: PIN 6: PIN 7: PIN 8: Laser Anode (+), Case) Monitor Photodiode Anode Monitor Photodiode Cathode TEC (-) 1.750 (44.5) 1.520 (38.6) 0.250 (6.4) 1.250 (31.8) M 3 THD (2 PLCS) 1250 (31.8) FIBER PIGTAIL LOOSE TUBE STRAIN RELIEF 0.060 (1.52) 0.625 (15.8) 0.50 (12.7 MIN) 090 (2.29) DIA 1 10 1.000 (25.4) 0.250 (0.64) 0.425 (10.8) 175 (4.45) DIA 0.270 0.256 (6.86) (6.50) 0.159 DIA (4 PLCS) LASER OUTPUT C-Mount Package 0.310 (7.87) 0.115 (2.9) 0.620(15.7) 0.230 (5.84) 0.110 (2.79) 0.730 0.100 (18.5) (2.54) 0.590 (15.0) 0.125 (3.18) Laser Safety Personal Hazard: Direct and prolonged exposure to a laser beam may cause eye damage. Observe precautions accompanying the product and precautions appropriate to a Class IV laser. Handling Precautions: Products are subject to the risks normally associated with sensitive electronic devices including static discharge, transients, and overload. Special Orders: Some products can be supplied with performance characteristics that will meet special customer requirements and that are different from those indicated herein. Contact the Laser Diode Sales Department or your local Laser Diode Representative to discuss your requirements. Gallium arsenide lasers emit infrared radiation which is invisible to the human eye. When in use, safety precautions should be taken to avoid the possibility of eye damage. Wear certified eye protection. Do not stare directly at the device or view an operating laser at close range. If viewing is required, the beam should only be observed by reflection from a matte surface utilizing an image convertor or by use of a suitable fluorescent screen. INVISIBLE LASER RADIATION DANGER "INVISIBLE LASER RADIATION * AVOID DIRECT EXPOSURE TO BEAM" "CLASS IV LASER PRODUCT" MAX. PEAK POWER 2 WATTS WAVELENGTH 808 nm. Laser Diode Inc. TO-3 Type: CW 2000-T3 Case___________ Pkg.______ IM 3.5A PO 2 W ITH 0.60A 808nm Date of Mfr._________________ / / Laser Diode Inc. Made in Edison, New Jersey 08820 U.S.A. This product conforms to DHEW regulation 21 CFR Subchapter J CAUTION: Use of contents or adjustments or performance of procedures other than specified herein may result in hazardous radiation exposure. Laser Diode Inc. reserves the right to make changes at any time as deemed necessary to improve the design and supply the best possible product. Information provided is believed at this time to be accurate and reliable. No responsibility is assumed for its use, nor for any infringements on the rights of others. Laser Diode Incorporated 4 Olsen Avenue, Edison, New Jersey 08820 USA Voice: 732-549-9001, Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com