Si PIN photodiode S9345 Dual-element photodiode using newly developed small, thin package The S9345 is a dual-element Si PIN photodiode employing a newly developed small, thin plastic package. The cubic volume reduced to one-fifth that of similar type photodiodes using conventional package. In order to extend the detection area when used as a reflection-mode optical switch, the entire photodiode photosensitive area of 1.5 mm wide and 5.6 mm long is asymmetrically segmented into 2 longitudinal sections of 1.5 mm and 4.1 mm. Features Applications Miniature and thin plastic package: 3.4 x 7.0 x 0.95 t mm Optical switches Surface mount type Asymmetrical dual-element PIN photodiode Photosensitive area Photodiode A: 1.5 x 1.5 mm Photodiode B: 1.5 x 4.1 mm High sensitivity Absolute maximum ratings (Ta=25 C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR max Topr Tstg Value 20 -25 to +85 -40 to +100 Unit V C C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 C, per 1 element) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Short circuit Photodiode A Photodiode B current Dark current Photodiode A Terminal capacitance Photodiode B Cutoff frequency Symbol p S Isc Condition =780 nm VR=0 V, 2856 K 100 lx ID VR=10 V, all elements Ct VR=10 V, f=1 MHz fc VR=10 V, RL=50 =780 nm, -3 dB Min. 0.5 - Typ. 320 to 1100 960 0.55 2.6 Max. - - 7.1 - - 0.4 4 10 5 8 20 nA 7 15 - MHz www.hamamatsu.com Unit nm nm A/W A pF 1 S9345 Si PIN photodiode Spectral response Photosensitivity temperature characteristics (Typ. Ta=25 C) 0.8 1.2 Temperature coefficient (%/C) 0.7 Photosensitivity (A/W) QE=100% 0.6 0.5 0.4 0.3 0.2 0.1 0 200 (Typ.) 1.4 1.0 0.8 0.6 0.4 0.2 0 400 600 800 1000 -0.2 400 1200 Wavelength (nm) 500 600 700 800 900 Wavelength (nm) KPINB0293EA KPINB0294EA Terminal capacitance vs. reverse voltage Dark current vs. reverse voltage (Typ. Ta=25 C) 100 nA 1100 1000 (Typ. Ta=25 C, f=1 MHz) 1 nF 10 nA Terminal capacitance Dark current 100 pF 1 nA 100 pA Photodiode B 10 pF Photodiode A 1 pF 10 pA 1 pA 0.01 0.1 1 10 100 Reverse voltage (V) 100 fF 0.1 1 10 100 Reverse voltage (V) KPINB0295EA KPINB0296EA 2 S9345 Si PIN photodiode Dimensional outline (unit: mm) 0.2 Photosensitive area 0.3 3.4* 1.5 b 0.02 a 6.4 7.0* 7.2 0.2 7.2 0.2 b 2.54 7.0* 1.3 2.54 a 4.1 0.5 1.5 ACTIVE AREA 0.3 4.0 0.2 4.0 0.2 Photosensitive surface Anode A Cathode common Anode B Cathode common Cathode common 0.75 0.05 0.15 0.95 0.45 2.8 0.05 3.4* Tolerance unless otherwise noted: 0.1, 2 Chip position accuracy with respect to the package dimensions marked * X, Y0.2, 2 Electrodes Part of the lead frame on the bottom of the package might not be covered with epoxy resin. KPINA0095JA Measured example of temperature profile with our hot-air reflow oven for product testing This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 C or less and a humidity of 60% or less, and perform soldering within 24 hours. 300 C 235 C max. Temperature 220 C 180 C 170 C Preheat 70 to 90 s Soldering 40 s max. Time KPINB0394EA 3 Si PIN photodiode S9345 Information described in this material is current as of March, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1069E02 Mar. 2013 DN 4