S9345 - Hamamatsu Photonics K.K.

Si PIN photodiode

Dual-element photodiode using newly devel-

oped small, thin package

S9345

www.hamamatsu.com

Absolute maximum ratings (Ta=25 °C)

Electrical and optical characteristics (Ta=25 °C, per 1 element)

Parameter Symbol Value Unit

Reverse voltage VR max 20 V

Operating temperature Topr -25 to +85 °C

Storage temperature Tstg -40 to +100 °C

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

The S9345 is a dual-element Si PIN photodiode employing a newly developed small, thin plastic package. The cubic volume

reduced to one-ﬁ fth that of similar type photodiodes using conventional package. In order to extend the detection area

when used as a reﬂ ection-mode optical switch, the entire photodiode photosensitive area of 1.5 mm wide and 5.6 mm long

is asymmetrically segmented into 2 longitudinal sections of 1.5 mm and 4.1 mm.

Parameter Symbol Condition Min. Typ. Max. Unit

Spectral response range λ-320 to 1100 - nm

Peak sensitivity wavelength λp- 960 - nm

Photosensitivity S λ=780 nm 0.5 0.55 - A/W

Short circuit

current

Photodiode A Isc VR=0 V, 2856 K

100 lx

-2.6 - μA

Photodiode B - 7.1 -

Dark current IDVR=10 V, all elements - 0.4 5 nA

Terminal

capacitance

Photodiode A Ct VR=10 V, f=1 MHz -48

Photodiode B - 10 20

Cutoff frequency fc VR=10 V, RL=50 Ω

λ=780 nm, -3 dB 7 15 - MHz

Optical switches

Asymmetrical dual-element PIN photodiode

Photosensitive area

Photodiode A: 1.5 × 1.5 mm

Photodiode B: 1.5 × 4.1 mm

High sensitivity

Miniature and thin plastic package: 3.4 × 7.0 × 0.95 t mm

Surface mount type

Features Applications

S9345

Si PIN photodiode

Spectral response Photosensitivity temperature characteristics

Terminal capacitance vs. reverse voltage

Dark current vs. reverse voltage

Wavelength (nm)

(Typ. Ta=25 °C)

Photosensitivity (A/W)

400200

0.1

0.2

0.8

0.5

0.6

0.7

0.4

0.3

600 800 1000 1200

QE=100%

Wavelength (nm)

(Typ.)

Temperature coefficient (%/°C)

400 500 600 700 800 900 1000

-0.2

0.2

1.4

0.8

1.0

1.2

0.6

0.4

1100

Reverse voltage (V)

(Typ. Ta=25 °C, f=1 MHz)

Terminal capacitance

0.1 1 10

100 fF

1 pF

10 pF

100 pF

1 nF

100

Photodiode B

Photodiode A

Reverse voltage (V)

(Typ. Ta=25 °C)

Dark current

0.01 0.1 1 10

1 pA

10 pA

100 pA

1 nA

100 nA

10 nA

100

KPINB0293EA KPINB0294EA

KPINB0296EA

KPINB0295EA

S9345

Si PIN photodiode

Dimensional outline (unit: mm)

1.3

7.2 ± 0.2

7.0*

6.4

2.54

3.4*0.3 0.3

4.0 ± 0.2

3.4*

2.8

7.0*

7.2 ± 0.2

0.05

0.45

0.75

0.950.15

0.05

2.54

0.5

0.2

Photosensitive area

Photosensitive

surface

1.5

ACTIVE AREA

1.5

0.02

4.1

Tolerance unless otherwise noted: ±0.1, ±2°

Chip position accuracy with respect to the

package dimensions marked *

X, Y≤±0.2, θ≤±2°

Electrodes

Part of the lead frame on the bottom of the

package might not be covered with epoxy resin.

Anode A

Cathode common

Anode B

Cathode common

KPINA0095JA

KPINB0394EA

Time

Temperature

300 °C

220 °C

180 °C

170 °C

Preheat

70 to 90 s

Soldering

40 s max.

235 °C max.

Measured example of temperature profile with our hot-air reflow oven for product testing

This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a

humidity of 60% or less, and perform soldering within 24 hours.

Cat. No. KPIN1069E02 Mar. 2013 DN

S9345

Si PIN photodiode

www.hamamatsu.com

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8

France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866

Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the

information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always

Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or

a suffix "(Z)" which means developmental specifications.

The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that

one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product

use.

Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.

Information described in this material is current as of March, 2013.